JP5161688B2 - 半導体装置および半導体モジュール - Google Patents
半導体装置および半導体モジュール Download PDFInfo
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- JP5161688B2 JP5161688B2 JP2008195784A JP2008195784A JP5161688B2 JP 5161688 B2 JP5161688 B2 JP 5161688B2 JP 2008195784 A JP2008195784 A JP 2008195784A JP 2008195784 A JP2008195784 A JP 2008195784A JP 5161688 B2 JP5161688 B2 JP 5161688B2
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- 229920005989 resin Polymers 0.000 claims abstract description 69
- 239000011347 resin Substances 0.000 claims abstract description 69
- 238000007789 sealing Methods 0.000 claims abstract description 65
- 238000003825 pressing Methods 0.000 claims abstract description 44
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910001111 Fine metal Inorganic materials 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
10A 半導体モジュール
12 アイランド
14,14A,14B,14C リード
16 封止樹脂
18 凹状部
20 半導体素子
22 貫通孔
24 平坦部
26 ヒートシンク
28 ビス
28A 頭部
28B 柱部
30 ワッシャ
32 孔部
34 金属細線
50 リードフレーム
52 外枠
54 ブロック
56、56A、56B、56C、56D、56E、56F、56G、56H ユニット
58 タイバー
60 モールド金型
62 上金型
64 下金型
66、66A、66B、66C、66D キャビティ
68 押圧部
70 押圧部
72 ポッド
78 凸部
Claims (5)
- アイランドと、
前記アイランドの主面に実装された半導体素子と、
前記アイランドと前記半導体素子とを一体的に封止する封止樹脂と、
前記封止樹脂を厚み方向に貫通して設けた貫通孔と、
前記貫通孔の周辺部の前記封止樹脂の主面を平坦化した平坦部と、
前記半導体素子と重畳する領域の前記封止樹脂の主面を、前記平坦部よりも窪ませた凹状部とを備え、
前記平坦部および前記凹状部が設けられる領域の前記封止樹脂は、前記封止樹脂の他の領域よりも薄い肉薄部とされ、
前記半導体素子は、前記封止樹脂の他の領域から、前記肉薄部に至るように配置されることを特徴とする半導体装置。 - 前記凹状部は、前記平坦部に連続して設けられることを特徴とする請求項1に記載の半導体装置。
- 前記平坦部は、前記半導体素子が載置される領域を除外して設けられることを特徴とする請求項1または請求項2に記載の半導体装置。
- 請求項1から請求項3の何れかに記載された半導体装置と、前記半導体装置に当接する放熱手段とを備えた半導体モジュールであり、
前記半導体装置と前記放熱手段とは、前記半導体装置の前記貫通孔を貫通すると共に前記半導体装置の主面を押圧する押圧手段により当接され、
前記押圧手段は、前記半導体素子と重畳する領域を除外した部分の前記半導体装置の前記平坦部に接触することを特徴とする半導体モジュール。 - 前記押圧手段は、前記半導体装置の貫通孔に挿入されたビスと、前記ビスの頭部と前記半導体装置との間に介装されたワッシャであり、
前記ワッシャの主面が前記半導体装置の前記平坦部に接触することを特徴とする請求項4に記載の半導体モジュール。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008195784A JP5161688B2 (ja) | 2008-07-30 | 2008-07-30 | 半導体装置および半導体モジュール |
US12/512,802 US7839004B2 (en) | 2008-07-30 | 2009-07-30 | Semiconductor device, semiconductor module, method for manufacturing semiconductor device, and lead frame |
CN2009101636140A CN101640178B (zh) | 2008-07-30 | 2009-07-30 | 半导体装置、半导体装置的制造方法及引线框 |
CN201110429499.4A CN102522375B (zh) | 2008-07-30 | 2009-07-30 | 半导体装置、半导体装置的制造方法及引线框 |
US12/904,851 US8241958B2 (en) | 2008-07-30 | 2010-10-14 | Semiconductor device, semiconductor module, method for manufacturing semiconductor device, and lead frame |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008195784A JP5161688B2 (ja) | 2008-07-30 | 2008-07-30 | 半導体装置および半導体モジュール |
Publications (2)
Publication Number | Publication Date |
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JP2010034348A JP2010034348A (ja) | 2010-02-12 |
JP5161688B2 true JP5161688B2 (ja) | 2013-03-13 |
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JP2008195784A Active JP5161688B2 (ja) | 2008-07-30 | 2008-07-30 | 半導体装置および半導体モジュール |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5902543B2 (ja) * | 2012-04-20 | 2016-04-13 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP6653199B2 (ja) * | 2016-03-23 | 2020-02-26 | ローム株式会社 | 半導体装置 |
KR101668035B1 (ko) * | 2016-06-15 | 2016-10-21 | 제엠제코(주) | 결합부가 개선된 반도체 칩 패키지 |
JP6647187B2 (ja) * | 2016-11-14 | 2020-02-14 | 三菱電機株式会社 | パワーモジュールおよびその製造方法 |
WO2024104172A1 (zh) * | 2022-11-17 | 2024-05-23 | 海信家电集团股份有限公司 | 功率模块组件和具有其的电子设备 |
CN117410251A (zh) * | 2023-08-31 | 2024-01-16 | 海信家电集团股份有限公司 | 智能功率模块和电子设备 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS615529A (ja) * | 1984-06-20 | 1986-01-11 | Hitachi Ltd | 絶縁型半導体装置 |
JPS6195536A (ja) * | 1984-10-16 | 1986-05-14 | Sanken Electric Co Ltd | 樹脂封止型半導体装置の製造方法 |
JPS62120035A (ja) * | 1985-11-20 | 1987-06-01 | Sanyo Electric Co Ltd | 樹脂封止型半導体装置の製造方法 |
JPH04242966A (ja) * | 1990-08-09 | 1992-08-31 | Fuji Electric Co Ltd | 樹脂封止形半導体装置 |
JP2001320185A (ja) * | 2000-05-11 | 2001-11-16 | Toshiba Corp | 電子部品のモジュール装置 |
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