JP5150578B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP5150578B2 JP5150578B2 JP2009177816A JP2009177816A JP5150578B2 JP 5150578 B2 JP5150578 B2 JP 5150578B2 JP 2009177816 A JP2009177816 A JP 2009177816A JP 2009177816 A JP2009177816 A JP 2009177816A JP 5150578 B2 JP5150578 B2 JP 5150578B2
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- semiconductor chip
- protective metal
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 134
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000010410 layer Substances 0.000 claims description 132
- 239000000758 substrate Substances 0.000 claims description 125
- 229910052751 metal Inorganic materials 0.000 claims description 79
- 239000002184 metal Substances 0.000 claims description 79
- 230000001681 protective effect Effects 0.000 claims description 71
- 229910000679 solder Inorganic materials 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 239000002356 single layer Substances 0.000 claims 1
- 230000035882 stress Effects 0.000 description 24
- 238000000034 method Methods 0.000 description 14
- 238000002474 experimental method Methods 0.000 description 8
- 238000004088 simulation Methods 0.000 description 8
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
はじめに、本発明の第1の実施形態に係る半導体装置について、図1〜図9を参照して説明する。なお、本実施形態の半導体装置は、後述する半導体チップ11が、後述する有機基板上21にプリップチップ実装されたものである。以下、この半導体チップ11及び有機基板21について、詳細に説明する。
次に、本発明の第2の実施形態に係る半導体装置について、図12を参照して説明する。なお、第2の実施形態においては、第1の実施形態と基本的な構造は同様であるため、第1の実施形態と異なる箇所を説明する。
Claims (4)
- 表面に形成された絶縁膜、この絶縁膜上の中央部及び外周部にそれぞれ形成された複数の電極パッド、及び、これらの電極パッド上にそれぞれ形成された複数の保護メタル層を有する多層配線構造の半導体チップと、
この半導体チップが実装され、表面の前記電極パッドに対応する箇所にそれぞれ形成された複数の基板端子部を有し、かつ前記基板端子部が形成された箇所にそれぞれ開口を備えるとともにこれらの開口が相互に溝で連結されたソルダーレジスト膜を表面に有する基板と、を具備し、
前記半導体チップは、前記保護メタル層上及び前記基板端子部上のいずれか一方に形成されたスタッドバンプが、他方に形成された半田バンプに接続することで、前記基板上に実装されたことを特徴とする半導体装置。 - 前記保護メタル層は、弾性率が200GPa以上であり、かつ、膜厚が1.5μm以上の単層の金属層であることを特徴とする請求項1に記載の半導体装置。
- 多層配線構造の半導体チップ表面に形成された絶縁膜上の中央部及び外周部にそれぞれ形成された複数の電極パッド上にそれぞれ保護メタル層を形成し、
前記保護メタル層上、及び前記半導体チップが実装され、表面に複数の基板端子部を有し、かつ前記複数の基板端子部が形成された箇所にそれぞれ開口を備えるとともにこれらの開口が相互に溝で連結されたソルダーレジスト膜を表面に有する基板の前記基板端子部上、のいずれか一方にスタッドバンプを形成し、他方には半田バンプを形成し、前記スタッドバンプと前記半田バンプはそれぞれが対向する位置に形成され、かつ接続することを特徴とする半導体装置の製造方法。 - 前記保護メタル層の形成は、弾性率が200GPa以上の材料を1.5μm以上の膜厚に単層で形成することを特徴とする請求項3に記載の半導体装置の製造方法。
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CN104979314A (zh) * | 2014-04-09 | 2015-10-14 | 日月光半导体制造股份有限公司 | 半导体封装结构及半导体工艺 |
US11348901B1 (en) | 2020-11-30 | 2022-05-31 | Sandisk Technologies Llc | Interfacial tilt-resistant bonded assembly and methods for forming the same |
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JP3386029B2 (ja) * | 2000-02-09 | 2003-03-10 | 日本電気株式会社 | フリップチップ型半導体装置及びその製造方法 |
JP2004047537A (ja) * | 2002-07-09 | 2004-02-12 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US6703069B1 (en) * | 2002-09-30 | 2004-03-09 | Intel Corporation | Under bump metallurgy for lead-tin bump over copper pad |
US7005752B2 (en) * | 2003-10-20 | 2006-02-28 | Texas Instruments Incorporated | Direct bumping on integrated circuit contacts enabled by metal-to-insulator adhesion |
US7271496B2 (en) * | 2005-02-04 | 2007-09-18 | Stats Chippac Ltd. | Integrated circuit package-in-package system |
JP4768994B2 (ja) * | 2005-02-07 | 2011-09-07 | ルネサスエレクトロニクス株式会社 | 配線基板および半導体装置 |
JP4971769B2 (ja) * | 2005-12-22 | 2012-07-11 | 新光電気工業株式会社 | フリップチップ実装構造及びフリップチップ実装構造の製造方法 |
US7812448B2 (en) * | 2006-08-07 | 2010-10-12 | Freescale Semiconductor, Inc. | Electronic device including a conductive stud over a bonding pad region |
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