JP5149376B2 - 太陽電池素子及び太陽電池モジュール - Google Patents
太陽電池素子及び太陽電池モジュール Download PDFInfo
- Publication number
- JP5149376B2 JP5149376B2 JP2010505914A JP2010505914A JP5149376B2 JP 5149376 B2 JP5149376 B2 JP 5149376B2 JP 2010505914 A JP2010505914 A JP 2010505914A JP 2010505914 A JP2010505914 A JP 2010505914A JP 5149376 B2 JP5149376 B2 JP 5149376B2
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- Prior art keywords
- electrode
- solar cell
- cell element
- extraction
- extraction electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000605 extraction Methods 0.000 claims description 214
- 239000000758 substrate Substances 0.000 claims description 88
- 239000004020 conductor Substances 0.000 claims description 86
- 239000004065 semiconductor Substances 0.000 claims description 78
- 230000035882 stress Effects 0.000 description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 229910052709 silver Inorganic materials 0.000 description 14
- 239000004332 silver Substances 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 13
- 238000005476 soldering Methods 0.000 description 13
- 238000000576 coating method Methods 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 229920005749 polyurethane resin Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010505914A JP5149376B2 (ja) | 2008-03-31 | 2009-03-30 | 太陽電池素子及び太陽電池モジュール |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008089498 | 2008-03-31 | ||
JP2008089498 | 2008-03-31 | ||
JP2008140544 | 2008-05-29 | ||
JP2008140544 | 2008-05-29 | ||
JP2010505914A JP5149376B2 (ja) | 2008-03-31 | 2009-03-30 | 太陽電池素子及び太陽電池モジュール |
PCT/JP2009/056560 WO2009123149A1 (fr) | 2008-03-31 | 2009-03-30 | Élément de cellule solaire et module de cellule solaire |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012259819A Division JP5535297B2 (ja) | 2008-03-31 | 2012-11-28 | 太陽電池素子及び太陽電池モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2009123149A1 JPWO2009123149A1 (ja) | 2011-07-28 |
JP5149376B2 true JP5149376B2 (ja) | 2013-02-20 |
Family
ID=41135523
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010505914A Expired - Fee Related JP5149376B2 (ja) | 2008-03-31 | 2009-03-30 | 太陽電池素子及び太陽電池モジュール |
JP2012259819A Active JP5535297B2 (ja) | 2008-03-31 | 2012-11-28 | 太陽電池素子及び太陽電池モジュール |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012259819A Active JP5535297B2 (ja) | 2008-03-31 | 2012-11-28 | 太陽電池素子及び太陽電池モジュール |
Country Status (4)
Country | Link |
---|---|
US (1) | US9209332B2 (fr) |
EP (1) | EP2261999B1 (fr) |
JP (2) | JP5149376B2 (fr) |
WO (1) | WO2009123149A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9209332B2 (en) | 2008-03-31 | 2015-12-08 | Kyocera Corporation | Solar cell element and solar cell module |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5219977B2 (ja) * | 2009-10-26 | 2013-06-26 | 京セラ株式会社 | 太陽電池素子および太陽電池モジュール |
JP5219984B2 (ja) * | 2009-11-27 | 2013-06-26 | 京セラ株式会社 | 太陽電池モジュール |
US20120211049A1 (en) * | 2009-10-26 | 2012-08-23 | Kyocera Corporation | Solar cell element and solar cell module |
JP2011096731A (ja) * | 2009-10-27 | 2011-05-12 | Kyocera Corp | 太陽電池素子および太陽電池モジュール |
JP2011187906A (ja) * | 2010-02-15 | 2011-09-22 | Kyocera Corp | 太陽電池素子およびその製造方法 |
JP4944240B1 (ja) * | 2010-11-30 | 2012-05-30 | シャープ株式会社 | 裏面電極型太陽電池セル、配線シート付き裏面電極型太陽電池セル、太陽電池モジュール、配線シート付き裏面電極型太陽電池セルの製造方法および太陽電池モジュールの製造方法 |
JP1546719S (fr) * | 2015-08-19 | 2019-03-18 | ||
JP1546718S (fr) * | 2015-08-19 | 2019-03-18 | ||
KR20190079622A (ko) * | 2016-11-07 | 2019-07-05 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 고광전변환효율 태양전지 및 고광전변환효율 태양전지의 제조 방법 |
US11908958B2 (en) * | 2016-12-30 | 2024-02-20 | Maxeon Solar Pte. Ltd. | Metallization structures for solar cells |
US10436089B2 (en) * | 2017-01-18 | 2019-10-08 | Cummins Emission Solutions Inc. | Radio frequency sensor in an exhaust aftertreatment system |
JP7449152B2 (ja) | 2020-04-23 | 2024-03-13 | 株式会社カネカ | 太陽電池の製造方法および太陽電池 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006029250A2 (fr) * | 2004-09-07 | 2006-03-16 | Advent Solar, Inc. | Traitement et procedes de fabrication pour cellules solaires emettrices a contact arriere |
JP2007521668A (ja) * | 2004-02-05 | 2007-08-02 | アドベント ソーラー,インク. | バックコンタクト型太陽電池とその製造法 |
JP2008034609A (ja) * | 2006-07-28 | 2008-02-14 | Kyocera Corp | 太陽電池素子及びこれを用いた太陽電池モジュール、並びに、これらの製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3502507A (en) | 1966-10-28 | 1970-03-24 | Textron Inc | Solar cells with extended wrap-around electrodes |
JPS63211773A (ja) | 1987-02-27 | 1988-09-02 | Mitsubishi Electric Corp | 化合物半導体太陽電池 |
JPH0711475Y2 (ja) | 1988-09-30 | 1995-03-15 | 日本電気株式会社 | 太陽電池セル |
US5478402A (en) * | 1994-02-17 | 1995-12-26 | Ase Americas, Inc. | Solar cell modules and method of making same |
EP0881694A1 (fr) * | 1997-05-30 | 1998-12-02 | Interuniversitair Micro-Elektronica Centrum Vzw | Cellule solaire et méthode de fabrication |
JP4189190B2 (ja) | 2002-09-26 | 2008-12-03 | 京セラ株式会社 | 太陽電池モジュール |
US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
JP4322199B2 (ja) | 2004-10-22 | 2009-08-26 | シャープ株式会社 | 太陽電池セル、太陽電池セルユニットの製造方法および太陽電池モジュール |
JP2006324590A (ja) | 2005-05-20 | 2006-11-30 | Sharp Corp | 裏面電極型太陽電池とその製造方法 |
JP4290747B2 (ja) * | 2006-06-23 | 2009-07-08 | シャープ株式会社 | 光電変換素子およびインターコネクタ付き光電変換素子 |
EP1918290A1 (fr) * | 2006-10-11 | 2008-05-07 | Ferrer Internacional, S.A. | La polymorphe B de la N-{2-fluoro-5-[3-thiophèn-2-carbonyle)-pyrazolo[1,5-a]pyrimidin-7-yl]-phènyl}-N-methyle-acetamide |
JP5149376B2 (ja) | 2008-03-31 | 2013-02-20 | 京セラ株式会社 | 太陽電池素子及び太陽電池モジュール |
-
2009
- 2009-03-30 JP JP2010505914A patent/JP5149376B2/ja not_active Expired - Fee Related
- 2009-03-30 WO PCT/JP2009/056560 patent/WO2009123149A1/fr active Application Filing
- 2009-03-30 US US12/935,579 patent/US9209332B2/en not_active Expired - Fee Related
- 2009-03-30 EP EP09726666.2A patent/EP2261999B1/fr not_active Not-in-force
-
2012
- 2012-11-28 JP JP2012259819A patent/JP5535297B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007521668A (ja) * | 2004-02-05 | 2007-08-02 | アドベント ソーラー,インク. | バックコンタクト型太陽電池とその製造法 |
WO2006029250A2 (fr) * | 2004-09-07 | 2006-03-16 | Advent Solar, Inc. | Traitement et procedes de fabrication pour cellules solaires emettrices a contact arriere |
JP2008034609A (ja) * | 2006-07-28 | 2008-02-14 | Kyocera Corp | 太陽電池素子及びこれを用いた太陽電池モジュール、並びに、これらの製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9209332B2 (en) | 2008-03-31 | 2015-12-08 | Kyocera Corporation | Solar cell element and solar cell module |
Also Published As
Publication number | Publication date |
---|---|
EP2261999A4 (fr) | 2015-08-19 |
US9209332B2 (en) | 2015-12-08 |
JPWO2009123149A1 (ja) | 2011-07-28 |
WO2009123149A1 (fr) | 2009-10-08 |
EP2261999A1 (fr) | 2010-12-15 |
US20110023962A1 (en) | 2011-02-03 |
JP2013042185A (ja) | 2013-02-28 |
JP5535297B2 (ja) | 2014-07-02 |
EP2261999B1 (fr) | 2019-03-27 |
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