JP5133120B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP5133120B2 JP5133120B2 JP2008114093A JP2008114093A JP5133120B2 JP 5133120 B2 JP5133120 B2 JP 5133120B2 JP 2008114093 A JP2008114093 A JP 2008114093A JP 2008114093 A JP2008114093 A JP 2008114093A JP 5133120 B2 JP5133120 B2 JP 5133120B2
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- light
- phosphor
- emitting device
- light emitting
- wavelength
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3201—Structure
- H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
- H01L2224/32013—Structure relative to the bonding area, e.g. bond pad the layer connector being larger than the bonding area, e.g. bond pad
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Led Device Packages (AREA)
- Led Devices (AREA)
Description
2、41 基板
3a、3b 配線パターン
4 LEDチップ
5 ダイボンド剤
6a、6b ワイヤ
7、51 封止部材
8 封止外層
10B 青色蛍光体
10R 赤色蛍光体
10G 緑色蛍光体
11 出射光
12B 青色光
12R 赤色光
12G 緑色光
12W 白色光
21 発光素子表面層
42 絶縁膜
61 反射部材
Em 発光
Ex 励起
S1 本発明の発光スペクトル
S2 従来の発光スペクトル
Claims (9)
- 発光素子と、この発光素子を固着する基板と、前記発光素子が発する紫外光または近紫外光を吸収して第1の波長変換光を発する蛍光体を含有する第1の蛍光体層と、前記紫外光または近紫外光を吸収して第2の波長変換光を発する蛍光体を含有する第2の蛍光体層と、前記紫外光または近紫外光を吸収して第3の波長変換光を発する蛍光体を含有する第3の蛍光体層とを備え、
前記第1の蛍光体層と前記第2の蛍光体層は、前記発光素子の略前面側に配設され、前記第3の蛍光体層は前記発光素子の略背面側に配設されることを特徴とする発光装置。 - 前記第1の蛍光体層は前記発光素子を覆う封止外層によって成り、
前記第3の蛍光体層は前記発光素子の背面を前記基板に固着する接着層によって成り、
前記第2の蛍光体層は前記第1の蛍光体層と前記第3の蛍光体層の間に配設されることを特徴とする請求項1に記載の発光装置。 - 前記第2の蛍光体層は、前記封止外層の内側に充填されて前記発光素子を封止する封止部材によって形成されることを特徴とする請求項2に記載の発光装置。
- 前記第2の蛍光体層は、前記発光素子の表面を覆う発光素子表面層によって形成されることを特徴とする請求項1または2に記載の発光装置。
- 前記第1の蛍光体層が含有する蛍光体は、前記第2及び第3の蛍光体層が含有する蛍光体がそれぞれ発する前記波長変換光を吸収しにくいことを特徴とする請求項1から4の何れか一項に記載の発光装置。
- 前記第3の蛍光体層が含有する蛍光体が発する前記第3の波長変換光のピーク発光波長は、前記第1、及び前記第2の蛍光体層が含有する蛍光体が吸収する波長より長波長側であることを特徴とする請求項1から5の何れか一項に記載の発光装置。
- 前記第1の蛍光体層が含有する蛍光体は酸化物の青色蛍光体で組成はSr10(PO4)6Cl2:Euであり、前記第2の蛍光体層が含有する蛍光体は酸化物の緑色蛍光体で組成は(BaSr)2SiO4:EuもしくはBaMgAl10O17:Eu,Mnであり、前記第3の蛍光体層が含有する蛍光体は窒化物の赤色蛍光体で組成はCaAlSiN3:Euもしくは(SrCa)AlSiN3:Euであることを特徴とする請求項1から6の何れか一項に記載の発光装置。
- 前記基板は、熱伝導性を有する金属材料で成ることを特徴とする請求項1から7の何れか一項に記載の発光装置。
- 前記封止外層の外周に、前記波長変換光を反射する反射部材を備えたことを特徴とする請求項2または3に記載の発光装置。
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JP2008114093A JP5133120B2 (ja) | 2008-04-24 | 2008-04-24 | 発光装置 |
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JP2008114093A JP5133120B2 (ja) | 2008-04-24 | 2008-04-24 | 発光装置 |
Publications (2)
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JP2009267039A JP2009267039A (ja) | 2009-11-12 |
JP5133120B2 true JP5133120B2 (ja) | 2013-01-30 |
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JP2008114093A Active JP5133120B2 (ja) | 2008-04-24 | 2008-04-24 | 発光装置 |
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Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8441179B2 (en) | 2006-01-20 | 2013-05-14 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
JP5050045B2 (ja) | 2009-12-22 | 2012-10-17 | 株式会社東芝 | 発光装置 |
JP5842963B2 (ja) * | 2010-02-09 | 2016-01-13 | ソニー株式会社 | 発光装置 |
JP5757687B2 (ja) * | 2010-02-09 | 2015-07-29 | シャープ株式会社 | 発光装置、面光源装置、液晶表示装置、および発光装置の製造方法 |
US10359151B2 (en) | 2010-03-03 | 2019-07-23 | Ideal Industries Lighting Llc | Solid state lamp with thermal spreading elements and light directing optics |
US8632196B2 (en) | 2010-03-03 | 2014-01-21 | Cree, Inc. | LED lamp incorporating remote phosphor and diffuser with heat dissipation features |
JP5515992B2 (ja) | 2010-04-07 | 2014-06-11 | 日亜化学工業株式会社 | 発光装置 |
KR101641860B1 (ko) | 2010-05-12 | 2016-07-29 | 엘지이노텍 주식회사 | 발광소자 어레이, 조명장치 및 백라이트 장치 |
US10451251B2 (en) | 2010-08-02 | 2019-10-22 | Ideal Industries Lighting, LLC | Solid state lamp with light directing optics and diffuser |
US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
KR101338695B1 (ko) | 2012-04-27 | 2013-12-06 | 엘지이노텍 주식회사 | 표시 장치, 광 변환 부재 및 광 변환 부재 제조 방법 |
JPWO2014010211A1 (ja) * | 2012-07-10 | 2016-06-20 | 株式会社小糸製作所 | 発光モジュール |
JP5380588B2 (ja) * | 2012-07-17 | 2014-01-08 | 株式会社東芝 | 発光装置 |
JP6024685B2 (ja) * | 2014-03-06 | 2016-11-16 | 日亜化学工業株式会社 | 発光装置 |
CN105023988B (zh) * | 2014-04-25 | 2018-03-13 | 日月光半导体制造股份有限公司 | 发光半导体封装及相关方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000223749A (ja) * | 1999-01-29 | 2000-08-11 | Seiwa Electric Mfg Co Ltd | 発光ダイオードランプとその製造方法、チップ型発光ダイオード素子及びドットマトリクス型発光ダイオードユニット |
JP3393089B2 (ja) * | 1999-06-23 | 2003-04-07 | 株式会社シチズン電子 | 発光ダイオード |
JP4822482B2 (ja) * | 2001-05-23 | 2011-11-24 | シチズン電子株式会社 | 発光ダイオードおよびその製造方法 |
JP2004087631A (ja) * | 2002-08-23 | 2004-03-18 | Toyoda Gosei Co Ltd | 発光装置 |
JP4451178B2 (ja) * | 2004-03-25 | 2010-04-14 | スタンレー電気株式会社 | 発光デバイス |
JP2007201301A (ja) * | 2006-01-30 | 2007-08-09 | Sumitomo Metal Electronics Devices Inc | 白色ledの発光装置 |
JP4905009B2 (ja) * | 2006-09-12 | 2012-03-28 | 豊田合成株式会社 | 発光装置の製造方法 |
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