JP5120913B2 - 半導体装置および多層配線基板 - Google Patents
半導体装置および多層配線基板 Download PDFInfo
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- JP5120913B2 JP5120913B2 JP2006231008A JP2006231008A JP5120913B2 JP 5120913 B2 JP5120913 B2 JP 5120913B2 JP 2006231008 A JP2006231008 A JP 2006231008A JP 2006231008 A JP2006231008 A JP 2006231008A JP 5120913 B2 JP5120913 B2 JP 5120913B2
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- wiring
- wiring layer
- insulator
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- semiconductor device
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Geometry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Formation Of Insulating Films (AREA)
Description
(B)絶縁膜(SiO2,Si3N4,Al2O3など)との密着性が良いこと、
(C)導電率が大きいこと、
(D)加工が容易で加工精度が高いこと、及び
(E)化学的・物理的、さらに電気的にも安定であること。
101〜107 配線層
108 放熱装置
109〜116 層間絶縁膜
201 下地層
202 CF膜
301 p型基板
302 CMOS構成用nウェル
303 nMOSのソース領域
304 nMOSのドレイン領域
305 nMOSのゲート絶縁膜
306 nMOSのゲート電極
307 nMOSのソース電極
308 nMOSのドレイン電極
309 pMOSのドレイン領域
310 pMOSのソース領域
311 pMOSのゲート電極
312 pMOSのゲート絶縁膜
313 pMOSのソース電極
314 pMOSのドレイン電極
315 素子分離領域(SiO2等)
316 絶縁膜(SiO2等)
317 裏面電極
318 金属配線
319 導電ビア
320 熱ビア
401 Cu配線
402 導電性窒化膜
403 Si3N4
404 BPSG
405 Si3N4
406 フォトレジスト
407,408 SiCN
409 Si3N4
410 Cu
Claims (8)
- 半導体、導体、および絶縁体の少なくとも一つを含む基板上に多層配線構造を有する多層配線基板において、前記多層配線構造中の第1の配線層とその上の第2の配線層との間に比誘電率が平均して2.5以下の気体または絶縁物が介在し、前記第1の配線層における少なくとも一つの配線と前記第2の配線層における少なくとも一つの配線との間に所望の導電接続体を設け、さらに前記第1の配線層における所定の配線と前記第2の配線層における所定の配線との間に比誘電率が5以下のSiCNを含む絶縁物熱伝導体を設けたことを特徴とする多層配線基板。
- 前記第1の配線層と前記第2の配線層との間に絶縁物が介在し、前記絶縁性熱伝導体の熱伝導率が該絶縁物の熱伝導率よりも大きいことを特徴とする請求項1に記載の多層配線基板。
- 前記第1の配線層と前記第2の配線層との間に介在する絶縁物が炭素とフッ素とを含有する材料を含むことを特徴とする請求項2に記載の多層配線基板。
- 前記第1の配線層と前記第2の配線層との間に介在する絶縁物が炭素と水素とを含有する材料を含むことを特徴とする請求項2または3に記載の多層配線基板。
- 複数の半導体素子が形成された基板上に多層配線構造を有する半導体装置において、前記多層配線構造中の第1の配線層とその上の第2の配線層との間に比誘電率が平均して2.5以下の気体または絶縁物が介在し、前記第1の配線層における少なくとも一つの配線と前記第2の配線層における少なくとも一つの配線との間に所望の導電接続体を設け、さらに前記第1の配線層における所定の配線と前記第2の配線層における所定の配線との間に比誘電率が5以下のSiCNを含む絶縁物熱伝導体を設けたことを特徴とする半導体装置。
- 前記第1の配線層と前記第2の配線層との間に絶縁物が介在し、前記絶縁性熱伝導体の熱伝導率が該絶縁物の熱伝導率よりも大きいことを特徴とする請求項5に記載の半導体装置。
- 前記第1の配線層と前記第2の配線層との間に介在する絶縁物が炭素とフッ素とを含有する材料を含むことを特徴とする請求項6に記載の半導体装置。
- 前記第1の配線層と前記第2の配線層との間に介在する絶縁物が炭素と水素とを含有する材料を含むことを特徴とする請求項6または7に記載の半導体装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006231008A JP5120913B2 (ja) | 2006-08-28 | 2006-08-28 | 半導体装置および多層配線基板 |
PCT/JP2007/066478 WO2008026520A1 (en) | 2006-08-28 | 2007-08-24 | Semiconductor device and multilayer wiring board |
CN2007800313659A CN101507374B (zh) | 2006-08-28 | 2007-08-24 | 半导体装置以及多层布线基板 |
KR1020097000846A KR101334004B1 (ko) | 2006-08-28 | 2007-08-24 | 반도체 장치 및 다층 배선 기판 |
US12/310,483 US7977796B2 (en) | 2006-08-28 | 2007-08-24 | Semiconductor device and multilayer wiring board |
EP07806064A EP2059103A4 (en) | 2006-08-28 | 2007-08-24 | SEMICONDUCTOR ASSEMBLY AND MULTILAYER CONDUCTOR PLATE |
TW096131781A TWI401782B (zh) | 2006-08-28 | 2007-08-28 | 半導體裝置及多層配線基板 |
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JP2006231008A JP5120913B2 (ja) | 2006-08-28 | 2006-08-28 | 半導体装置および多層配線基板 |
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JP2008053639A JP2008053639A (ja) | 2008-03-06 |
JP5120913B2 true JP5120913B2 (ja) | 2013-01-16 |
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Country Status (7)
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---|---|
US (1) | US7977796B2 (ja) |
EP (1) | EP2059103A4 (ja) |
JP (1) | JP5120913B2 (ja) |
KR (1) | KR101334004B1 (ja) |
CN (1) | CN101507374B (ja) |
TW (1) | TWI401782B (ja) |
WO (1) | WO2008026520A1 (ja) |
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JP5700513B2 (ja) * | 2010-10-08 | 2015-04-15 | 国立大学法人東北大学 | 半導体装置の製造方法および半導体装置 |
US9543191B2 (en) * | 2012-02-22 | 2017-01-10 | Zeon Corporation | Wiring structure having interlayer insulating film and wiring line without a barrier layer between |
US9246100B2 (en) * | 2013-07-24 | 2016-01-26 | Micron Technology, Inc. | Memory cell array structures and methods of forming the same |
JP6652443B2 (ja) * | 2016-05-06 | 2020-02-26 | 株式会社日本マイクロニクス | 多層配線基板及びこれを用いたプローブカード |
US11052228B2 (en) | 2016-07-18 | 2021-07-06 | Scientia Vascular, Llc | Guidewire devices having shapeable tips and bypass cuts |
CN114126187B (zh) * | 2020-08-26 | 2024-05-10 | 宏恒胜电子科技(淮安)有限公司 | 具有内埋散热结构的线路板及其制作方法 |
US11658092B2 (en) * | 2020-11-13 | 2023-05-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal interconnect structure for thermal management of electrical interconnect structure |
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JP2003332429A (ja) * | 2002-05-09 | 2003-11-21 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
CN100352317C (zh) * | 2002-06-07 | 2007-11-28 | 松下电器产业株式会社 | 电子元件安装板、电子元件模块、制造电子元件安装板的方法及通信设备 |
US6958542B2 (en) * | 2002-09-03 | 2005-10-25 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP2005294525A (ja) * | 2004-03-31 | 2005-10-20 | Toshiba Corp | 半導体装置の製造方法 |
US7321098B2 (en) * | 2004-04-21 | 2008-01-22 | Delphi Technologies, Inc. | Laminate ceramic circuit board and process therefor |
JP2005317835A (ja) * | 2004-04-30 | 2005-11-10 | Semiconductor Leading Edge Technologies Inc | 半導体装置 |
JP2006140326A (ja) | 2004-11-12 | 2006-06-01 | Toshiba Corp | 半導体装置 |
TWI450379B (zh) * | 2005-06-20 | 2014-08-21 | Univ Tohoku | 層間絕緣膜及配線構造與此等之製造方法 |
WO2008001712A1 (fr) * | 2006-06-26 | 2008-01-03 | Nec Corporation | Élément de commutation, dispositif à semi-conducteurs, circuit intégré logique réinscriptible et élément de mémoire |
US7566652B2 (en) * | 2006-07-24 | 2009-07-28 | Texas Instruments Incorporated | Electrically inactive via for electromigration reliability improvement |
JP2008218604A (ja) * | 2007-03-02 | 2008-09-18 | Nec Electronics Corp | 半導体装置 |
JP2009111251A (ja) * | 2007-10-31 | 2009-05-21 | Tohoku Univ | 半導体装置およびその製造方法 |
-
2006
- 2006-08-28 JP JP2006231008A patent/JP5120913B2/ja not_active Expired - Fee Related
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2007
- 2007-08-24 US US12/310,483 patent/US7977796B2/en not_active Expired - Fee Related
- 2007-08-24 WO PCT/JP2007/066478 patent/WO2008026520A1/ja active Application Filing
- 2007-08-24 EP EP07806064A patent/EP2059103A4/en not_active Withdrawn
- 2007-08-24 CN CN2007800313659A patent/CN101507374B/zh not_active Expired - Fee Related
- 2007-08-24 KR KR1020097000846A patent/KR101334004B1/ko not_active IP Right Cessation
- 2007-08-28 TW TW096131781A patent/TWI401782B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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KR101334004B1 (ko) | 2013-11-27 |
JP2008053639A (ja) | 2008-03-06 |
TWI401782B (zh) | 2013-07-11 |
EP2059103A4 (en) | 2010-08-04 |
CN101507374B (zh) | 2011-03-30 |
WO2008026520A1 (en) | 2008-03-06 |
TW200830514A (en) | 2008-07-16 |
KR20090046782A (ko) | 2009-05-11 |
US20090283901A1 (en) | 2009-11-19 |
EP2059103A1 (en) | 2009-05-13 |
CN101507374A (zh) | 2009-08-12 |
US7977796B2 (en) | 2011-07-12 |
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