JP5107236B2 - 電子デバイスにおけるエレクトロマイグレーションを最小限に抑えるための方法 - Google Patents
電子デバイスにおけるエレクトロマイグレーションを最小限に抑えるための方法 Download PDFInfo
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- JP5107236B2 JP5107236B2 JP2008511236A JP2008511236A JP5107236B2 JP 5107236 B2 JP5107236 B2 JP 5107236B2 JP 2008511236 A JP2008511236 A JP 2008511236A JP 2008511236 A JP2008511236 A JP 2008511236A JP 5107236 B2 JP5107236 B2 JP 5107236B2
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000000203 mixture Substances 0.000 claims abstract description 34
- 230000008569 process Effects 0.000 claims abstract description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 40
- 125000000217 alkyl group Chemical group 0.000 claims description 39
- -1 decamethyleneimide Chemical compound 0.000 claims description 27
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 24
- 239000003054 catalyst Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 239000002253 acid Substances 0.000 claims description 14
- 125000003342 alkenyl group Chemical group 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 13
- 125000001931 aliphatic group Chemical group 0.000 claims description 12
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 claims description 11
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 9
- 150000001282 organosilanes Chemical class 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 150000002430 hydrocarbons Chemical class 0.000 claims description 7
- 229910052717 sulfur Inorganic materials 0.000 claims description 7
- 150000003585 thioureas Chemical class 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 239000008393 encapsulating agent Substances 0.000 claims description 6
- 125000005843 halogen group Chemical group 0.000 claims description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- 125000004434 sulfur atom Chemical group 0.000 claims description 6
- OCVLSHAVSIYKLI-UHFFFAOYSA-N 3h-1,3-thiazole-2-thione Chemical compound SC1=NC=CS1 OCVLSHAVSIYKLI-UHFFFAOYSA-N 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 125000006615 aromatic heterocyclic group Chemical group 0.000 claims description 5
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 5
- 239000012964 benzotriazole Substances 0.000 claims description 5
- 229930195733 hydrocarbon Natural products 0.000 claims description 5
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 5
- 150000003606 tin compounds Chemical class 0.000 claims description 5
- 150000003755 zirconium compounds Chemical class 0.000 claims description 5
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 4
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- 238000006482 condensation reaction Methods 0.000 claims description 4
- 150000002391 heterocyclic compounds Chemical class 0.000 claims description 4
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 claims description 4
- MTNDZQHUAFNZQY-UHFFFAOYSA-N imidazoline Chemical compound C1CN=CN1 MTNDZQHUAFNZQY-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 3
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- 239000002841 Lewis acid Substances 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 3
- 125000002723 alicyclic group Chemical group 0.000 claims description 3
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 125000005037 alkyl phenyl group Chemical group 0.000 claims description 3
- 125000004390 alkyl sulfonyl group Chemical group 0.000 claims description 3
- 125000004414 alkyl thio group Chemical group 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 claims description 3
- 150000001450 anions Chemical class 0.000 claims description 3
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 claims description 3
- 125000004181 carboxyalkyl group Chemical group 0.000 claims description 3
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 150000007517 lewis acids Chemical class 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- 125000003884 phenylalkyl group Chemical group 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 3
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 claims description 3
- 229920002545 silicone oil Polymers 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 125000001302 tertiary amino group Chemical group 0.000 claims description 3
- 150000003609 titanium compounds Chemical class 0.000 claims description 3
- BIGYLAKFCGVRAN-UHFFFAOYSA-N 1,3,4-thiadiazolidine-2,5-dithione Chemical compound S=C1NNC(=S)S1 BIGYLAKFCGVRAN-UHFFFAOYSA-N 0.000 claims description 2
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 claims description 2
- RAIPHJJURHTUIC-UHFFFAOYSA-N 1,3-thiazol-2-amine Chemical compound NC1=NC=CS1 RAIPHJJURHTUIC-UHFFFAOYSA-N 0.000 claims description 2
- WGJCBBASTRWVJL-UHFFFAOYSA-N 1,3-thiazolidine-2-thione Chemical compound SC1=NCCS1 WGJCBBASTRWVJL-UHFFFAOYSA-N 0.000 claims description 2
- WYPUYKGAZARPPO-UHFFFAOYSA-M 1-prop-2-ynylquinolin-1-ium;bromide Chemical compound [Br-].C1=CC=C2[N+](CC#C)=CC=CC2=C1 WYPUYKGAZARPPO-UHFFFAOYSA-M 0.000 claims description 2
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 claims description 2
- IKBSEVVRFQSDEV-UHFFFAOYSA-N 2-(1h-benzimidazol-2-ylsulfanyl)butanedioic acid Chemical compound C1=CC=C2NC(SC(CC(=O)O)C(O)=O)=NC2=C1 IKBSEVVRFQSDEV-UHFFFAOYSA-N 0.000 claims description 2
- DHTAIMJOUCYGOL-UHFFFAOYSA-N 2-ethyl-n-(2-ethylhexyl)-n-[(4-methylbenzotriazol-1-yl)methyl]hexan-1-amine Chemical compound C1=CC=C2N(CN(CC(CC)CCCC)CC(CC)CCCC)N=NC2=C1C DHTAIMJOUCYGOL-UHFFFAOYSA-N 0.000 claims description 2
- HRDCVMSNCBAMAM-UHFFFAOYSA-N 3-prop-2-ynoxyprop-1-yne Chemical compound C#CCOCC#C HRDCVMSNCBAMAM-UHFFFAOYSA-N 0.000 claims description 2
- REGFWZVTTFGQOJ-UHFFFAOYSA-N 4,5-dihydro-1,3-thiazol-2-amine Chemical compound NC1=NCCS1 REGFWZVTTFGQOJ-UHFFFAOYSA-N 0.000 claims description 2
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 claims description 2
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 claims description 2
- RZXWRJCGZANKDL-UHFFFAOYSA-N azepan-1-ium;benzoate Chemical compound C1CCC[NH2+]CC1.[O-]C(=O)C1=CC=CC=C1 RZXWRJCGZANKDL-UHFFFAOYSA-N 0.000 claims description 2
- IZKZIDXHCDIZKY-UHFFFAOYSA-N heptane-1,1-diamine Chemical compound CCCCCCC(N)N IZKZIDXHCDIZKY-UHFFFAOYSA-N 0.000 claims description 2
- 235000010299 hexamethylene tetramine Nutrition 0.000 claims description 2
- 239000004312 hexamethylene tetramine Substances 0.000 claims description 2
- DRBAJMGSRKIURK-UHFFFAOYSA-N n-benzylbut-3-yn-2-amine Chemical compound C#CC(C)NCC1=CC=CC=C1 DRBAJMGSRKIURK-UHFFFAOYSA-N 0.000 claims description 2
- GSQNEVOGXTVIJS-UHFFFAOYSA-N n-propan-2-ylbut-3-yn-2-amine Chemical compound CC(C)NC(C)C#C GSQNEVOGXTVIJS-UHFFFAOYSA-N 0.000 claims description 2
- 229950000688 phenothiazine Drugs 0.000 claims description 2
- 125000000446 sulfanediyl group Chemical group *S* 0.000 claims description 2
- 150000004992 toluidines Chemical class 0.000 claims description 2
- 239000007809 chemical reaction catalyst Substances 0.000 claims 3
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 claims 2
- 125000004093 cyano group Chemical group *C#N 0.000 claims 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- XPTMJJIPRSWBDK-UHFFFAOYSA-N 3-prop-2-ynylsulfanylprop-1-yne Chemical compound C#CCSCC#C XPTMJJIPRSWBDK-UHFFFAOYSA-N 0.000 claims 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims 1
- 230000006698 induction Effects 0.000 claims 1
- 229960005137 succinic acid Drugs 0.000 claims 1
- 239000003990 capacitor Substances 0.000 abstract description 3
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000013508 migration Methods 0.000 description 9
- 230000005012 migration Effects 0.000 description 8
- 0 *c1c(*C(SS*)=N2)c2c(*)c(*)c1I Chemical compound *c1c(*C(SS*)=N2)c2c(*)c(*)c1I 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000011133 lead Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 125000000218 acetic acid group Chemical group C(C)(=O)* 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 2
- 229940095070 tetrapropyl orthosilicate Drugs 0.000 description 2
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- OVSGBKZKXUMMHS-VGKOASNMSA-L (z)-4-oxopent-2-en-2-olate;propan-2-olate;titanium(4+) Chemical compound [Ti+4].CC(C)[O-].CC(C)[O-].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O OVSGBKZKXUMMHS-VGKOASNMSA-L 0.000 description 1
- MPJJRYGVHNTASI-SUKNRPLKSA-L (z)-4-oxopent-2-en-2-olate;propane-1,3-diolate;titanium(4+) Chemical compound [Ti+4].[O-]CCC[O-].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O MPJJRYGVHNTASI-SUKNRPLKSA-L 0.000 description 1
- QMTFKWDCWOTPGJ-KVVVOXFISA-N (z)-octadec-9-enoic acid;tin Chemical compound [Sn].CCCCCCCC\C=C/CCCCCCCC(O)=O QMTFKWDCWOTPGJ-KVVVOXFISA-N 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- VIAWXLFFSHQNAO-UHFFFAOYSA-N 2-[bis(2-hydroxyethyl)amino]butan-1-ol Chemical compound CCC(CO)N(CCO)CCO VIAWXLFFSHQNAO-UHFFFAOYSA-N 0.000 description 1
- KUQVFOOAIOMQOT-UHFFFAOYSA-N 2-methylpropyltin Chemical compound CC(C)C[Sn] KUQVFOOAIOMQOT-UHFFFAOYSA-N 0.000 description 1
- KFJDQPJLANOOOB-UHFFFAOYSA-N 2h-benzotriazole-4-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=NNN=C12 KFJDQPJLANOOOB-UHFFFAOYSA-N 0.000 description 1
- ZDZYGYFHTPFREM-UHFFFAOYSA-N 3-[3-aminopropyl(dimethoxy)silyl]oxypropan-1-amine Chemical compound NCCC[Si](OC)(OC)OCCCN ZDZYGYFHTPFREM-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- IOPFAXSCSOYPLX-UHFFFAOYSA-N CC(C)O[Ti](OC(C)C)(O[Si](C)(C)C)O[Si](C)(C)C Chemical compound CC(C)O[Ti](OC(C)C)(O[Si](C)(C)C)O[Si](C)(C)C IOPFAXSCSOYPLX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- SZKKRCSOSQAJDE-UHFFFAOYSA-N Schradan Chemical group CN(C)P(=O)(N(C)C)OP(=O)(N(C)C)N(C)C SZKKRCSOSQAJDE-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910007637 SnAg Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- LHFURYICKMKJHJ-UHFFFAOYSA-L [benzoyloxy(dibutyl)stannyl] benzoate Chemical compound CCCC[Sn+2]CCCC.[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1 LHFURYICKMKJHJ-UHFFFAOYSA-L 0.000 description 1
- HAAANJSJNWKVMX-UHFFFAOYSA-L [butanoyloxy(dimethyl)stannyl] butanoate Chemical compound CCCC(=O)O[Sn](C)(C)OC(=O)CCC HAAANJSJNWKVMX-UHFFFAOYSA-L 0.000 description 1
- UKLDJPRMSDWDSL-UHFFFAOYSA-L [dibutyl(dodecanoyloxy)stannyl] dodecanoate Chemical compound CCCCCCCCCCCC(=O)O[Sn](CCCC)(CCCC)OC(=O)CCCCCCCCCCC UKLDJPRMSDWDSL-UHFFFAOYSA-L 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 1
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 1
- ZRHOFLXFAAEXEE-UHFFFAOYSA-J butanoate;titanium(4+) Chemical compound [Ti+4].CCCC([O-])=O.CCCC([O-])=O.CCCC([O-])=O.CCCC([O-])=O ZRHOFLXFAAEXEE-UHFFFAOYSA-J 0.000 description 1
- LUZSPGQEISANPO-UHFFFAOYSA-N butyltin Chemical compound CCCC[Sn] LUZSPGQEISANPO-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 239000012975 dibutyltin dilaurate Substances 0.000 description 1
- ZXDVQYBUEVYUCG-UHFFFAOYSA-N dibutyltin(2+);methanolate Chemical compound CCCC[Sn](OC)(OC)CCCC ZXDVQYBUEVYUCG-UHFFFAOYSA-N 0.000 description 1
- PWEVMPIIOJUPRI-UHFFFAOYSA-N dimethyltin Chemical compound C[Sn]C PWEVMPIIOJUPRI-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- 229940093858 ethyl acetoacetate Drugs 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- IQGRGQMXVZJUNA-UHFFFAOYSA-N hydroxy(trimethyl)silane;titanium Chemical compound [Ti].C[Si](C)(C)O.C[Si](C)(C)O.C[Si](C)(C)O.C[Si](C)(C)O IQGRGQMXVZJUNA-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 150000002462 imidazolines Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- GCHSKZYGFZYKBO-UHFFFAOYSA-N methoxycarbonyl(phenyl)tin Chemical compound COC(=O)[Sn]C1=CC=CC=C1 GCHSKZYGFZYKBO-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002577 polybenzoxazole Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- HKJYVRJHDIPMQB-UHFFFAOYSA-N propan-1-olate;titanium(4+) Chemical compound CCCO[Ti](OCCC)(OCCC)OCCC HKJYVRJHDIPMQB-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- LSZKGNJKKQYFLR-UHFFFAOYSA-J tri(butanoyloxy)stannyl butanoate Chemical compound [Sn+4].CCCC([O-])=O.CCCC([O-])=O.CCCC([O-])=O.CCCC([O-])=O LSZKGNJKKQYFLR-UHFFFAOYSA-J 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- CPRPKIMXLHBUGA-UHFFFAOYSA-N triethyltin Chemical compound CC[Sn](CC)CC CPRPKIMXLHBUGA-UHFFFAOYSA-N 0.000 description 1
- AJRWIZDPFBBGPS-UHFFFAOYSA-N trihydroxy(1-methoxypropan-2-yloxy)silane Chemical compound COCC(C)O[Si](O)(O)O AJRWIZDPFBBGPS-UHFFFAOYSA-N 0.000 description 1
- ZQTYRTSKQFQYPQ-UHFFFAOYSA-N trisiloxane Chemical compound [SiH3]O[SiH2]O[SiH3] ZQTYRTSKQFQYPQ-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
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- H—ELECTRICITY
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J11/20—Constructional details
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- H01J9/02—Manufacture of electrodes or electrode systems
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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Description
本願は、米国特許法(35.U.S.C)第119条(e)に基づき、2005年5月10日出願の米国仮特許出願第60/679,610号の利益を主張する。米国仮特許出願第60/679,610号は、参照により本明細書に組み込まれる。
「a」および「an」は、各々1つまたは複数を意味する。
本発明は、
1)基板上に電子回路を形成すること、
2)電子回路の全体または一部を耐エレクトロマイグレーション組成物で処理すること、および
任意に、、3)段階2)の製品を被覆することを含む方法に関する。
この耐エレクトロマイグレーション組成物は、
A)耐エレクトロマイグレーション剤と、
B)オルガノシランと、
任意に、C)触媒と、
任意に、D)キャリアとを含む。
上記式中、R4、R5およびR6は各々独立して、水素原子、炭素原子1〜6個のアルキル基、アセチルおよびアルケニルから選択される。R7は、水素、炭素原子1〜6個のアルキル基、アセチル、アルケニルまたは−NH2である。R8は、エチレン、n−プロピレン、イソプロピレンなど、炭素原子少なくとも2個の二価の炭化水素基である。チオ尿素誘導体の例は、米国特許出願公開第2004/0170848A1号に開示されている。
上記式中、R1は上に記載したとおりである。R9は、水素原子、炭素原子1〜6個のアルキル基、−SH、−SCH2CH2CH2SO3Na、−NH2、−NHCH3,または−N(CH3)2である。R10は、炭素原子1〜6個のアルキル基、アルケニルまたはカルボキシアルキルである。R11は、ハロゲン原子または硫酸塩を含むアニオンである。ベンゾチアゾール誘導体の例は、米国特許出願公開第2004/0170848A1号に開示されている。
成分B)オルガノシラン
任意選択の成分C)は、縮合反応を容易にするために耐エレクトロマイグレーション組成物に添加することができる触媒である。この触媒は、ルイス酸、第一級、第二級または第三級有機アミン、金属酸化物、チタン化合物、スズ化合物、ジルコニウム化合物あるいはこれらの組合せを含んでよい。適切な触媒は当技術分野で公知であり、米国特許第4753977号の第4欄35行目〜第5欄57行目に記載されている触媒に例示される。成分C)の量は、選択される触媒のタイプおよび耐エレクトロマイグレーション組成物中の残りの組成物の選択を含む様々な要因に依存するが、成分C)の量は、成分A)、B)およびC)の総重量に基づき0%〜50%でよい。
成分D)キャリア
これらの実施例は、当業者に本発明を説明するためのものであり、特許請求の範囲に記載されている本発明の範囲を限定するものと解釈すべきではない。
図1は、上述の方法を用いて作製したPDPの一部分である。このPDPは、前面ガラスシート(1)および背面ガラスシート(2)を含む。Ag電極(3)は、一方または両方のガラスシート(1)、(2)に設けられる。このPDPの本体は、Ag電極(3)の一部を覆う誘電体層(4)を含む。Ag電極(3)の縁部は、Ag電極(3)とフレキシブル回路テープ(図示せず)との電気接触を可能にするためにむき出しのままである。このフレキシブル回路テープは、ACF(6)によってAg電極(3)に取り付けられる。耐エレクトロマイグレーション組成物を塗布してAg電極(3)の先端部とACF(6)との間に耐エレクトロマイグレーション層(5)を形成することにより、エレクトロマイグレーションの発生を低減することができる。
水滴試験は、比較的低い電圧で電極間のギャップに脱イオン水の滴を適用することを含み、これらの実施例では2ボルトを使用した。電極パターンは、SIR(表面絶縁抵抗)において使用されるものである。水滴は光学顕微鏡で観察することができ、導体間で短絡が生じるのにかかる時間は電流の増加によって測定される。電源に損傷を与えることを回避するために電流制限を設定する。この試験は、Mercado,L.L.,White,J.,Sarihan,V.&Lee,T.T.「Failure mechanism study of ACF packages.」IEEE Trans.Comp.Hybrids&Man.Tech.2003,26(3)509に記載されている。
耐エレクトロマイグレーション組成物の試料を、表1の成分を混合することによって調製する。プライマは、(C)5重量部のテトラブトキシチタネート、(B)5重量部の2−メチオキシ−1−メチルエチルオルトシリケート、(B)5重量部のテトラプロピルオルトシリケートおよび85重量部のオクタメチルトリシロキサンを含んでいた。MBTは、メルカプトベンゾチアゾールであった。IRGAMET(登録商標)39は、CIBA(登録商標) Specialty Chemicalsから購入したN,N−ビス(2−エチルヘキシル)−アル−メチル−1H−ベンゾトリアゾール−1−メタンアミンであった。BTAは、ベンゾトリアゾールであった。CUVAN(登録商標)484は、米国コネチカット州ノーウォークのR.T. Vanderbilt Companyから市販されているアルキルチアジアゾールであった。CUVAN(登録商標)826は、やはりR.T. Vanderbilt Companyから入手可能な2,5−シメルカプト(cimercapto)−1,3,4−チアジアゾール誘導体であった。6−HQは、6−ヒドロキシキノンであった。IRGAMET(登録商標)30は、やはりCIBA(登録商標) Specialty Chemicalsからのトリアゾール誘導体であった。2−MBは、2−メルカプトベンズイミダゾールであった。COBRATEC(登録商標) CBTは、米国オハイオ州シンシナティのPMC Specialties Group, Inc.からのカルボキシベンゾトリアゾールであった。ERAは、耐エレクトロマイグレーション剤を意味した。
2 裏面ガラス
3 銀電極
4 誘電体層
5 耐マイグレーション層
6 ACF、異方性導電接着剤
Claims (14)
- 電子回路においてAgのエレクトロマイグレーションを最小限に抑えるための方法であって、
1)基板上に前記電子回路を形成する段階であって、前記電子回路がAg電極を備える段階と、
2)前記電子回路のAg電極の全体または一部を耐エレクトロマイグレーション組成物で処理する段階であって、前記耐エレクトロマイグレーション組成物が、
A)耐エレクトロマイグレーション剤と、
B)オルガノシランと、
任意に、C)縮合反応触媒と、
任意に、D)キャリアと
を含む段階と、
任意に、3)段階2)の製品を被覆する段階と
を含む方法。 - 段階3)が存在し、段階2)の前記製品が、封入剤、導電性膜、導電性接着剤またはこれらの組合せから選択されるコーティングで被覆される、請求項1に記載の方法。
- 前記耐エレクトロマイグレーション剤が複素環芳香族化合物またはその誘導体を含む、請求項1に記載の方法。
- プラズマディスプレイパネルを作製する方法であって、
1)ガラスパネル上にAg電極を形成する段階と、
2)前記Ag電極を耐エレクトロマイグレーション組成物で処理する段階であって、前記耐エレクトロマイグレーション組成物が、
A)耐エレクトロマイグレーション剤と、
B)オルガノシランと、
任意に、C)縮合反応触媒と、
任意に、D)炭化水素、シリコーンオイル、またはこれらの組合せからなる群から選択されるキャリアと、
を含む段階と、
3)段階2)の製品を被覆する段階と
を含む方法。 - 成分A)が、アクリジン、2−アミノ−チアゾール、2−アミノ−チアゾリン、2−アミノ−1,2−4トリアゾール、アニオニン、ベンズイミダゾール、(2−ベンズイミダゾリルチオ)コハク酸、ベンゾオキサゾール(およびその誘導体)、ベンゾチアゾール(およびその誘導体)、ベンズイミダゾール(およびその誘導体)、ベンゾトリアゾール、3−ベンジルアミノ−l−ブチン、デカメチレンイミド、ジアミノヘプタン、ジシアンジアミン、N,N−ジ−(2−エチルヘキシル)−4−メチル−1H−ベンゾトリアゾール−1−メタンアミン、2,5−ジメルカプト−1,3,4チアジアゾール、ジプロパルギルエーテル、ジプロパルギルチオエーテル、6−N−エチルプリン、1−エチルアミノ−2−キノリン(およびその誘導体)、ヘキサメチレン−3,5−ジニトロベンゼン、ヘキサメチレンイミド、ヘキサメチレンイミンベンゾエート、ヘキサメチレンテトラミン、イミダゾール(およびその誘導体)、3−イソプロピルアミノ−1−ブチン、メルカプタン、メルカプトベンゾチアゾール、2−メルカプトチアゾリン、d−オキシイミノ−b−ビニルキヌクリジン、1,10−フェナチオジン、フェナントロリン、フェノチアジン、プロパルギルキノリニウムブロミド、カプロン酸プロパルギル、(2−チオ−2’−ベンゾ−チアゾリル)ブタン二酸、チオフェノール(およびその誘導体)、トルイジンまたはこれらの組合せから選択される、請求項1から4の何れか一項に記載の方法。
- 成分A)が、
I)下記式の少なくとも1つの基によってその脂肪族基または脂環式基が置換された脂肪族または脂環式のモノカルボン酸またはポリカルボン酸であって、
II)
III)
IV)下記の式
V)下記の式
VI)下記の式
VII)下記の式
VIII)下記の式
IX)下記の式
X)下記の式
から選択される、請求項1から4の何れか一項に記載の方法。 - 成分B)が、アルコキシシラン、アミノアルキルシラン、エポキシアルキルシラン、メルカプトアルキルシランまたはこれらの組合せを含む、請求項1から4の何れか一項に記載の方法。
- 成分C)が存在し、ルイス酸、第一級、第二級または第三級有機アミン、金属酸化物、チタン化合物、スズ化合物、ジルコニウム化合物またはこれらの組合せから選択される触媒を含む、請求項1から4の何れか一項に記載の方法。
- 請求項4に記載の方法によって作製されたプラズマディスプレイパネル。
- (i)前面ガラス板と、
(ii)前記前面ガラス板の反対側の背面ガラス板と、
(iii)前記前面ガラス板および前記背面ガラス板の少なくとも一方に設けられ、むき出しの縁部および覆われた部分を有するAg電極と、
(iv)前記Ag電極の前記覆われた部分を覆う誘電体層と、
(v)前記Ag電極の前記縁部の上に設けられ、
A)耐エレクトロマイグレーション剤と、
B)オルガノシランと、
任意に、C)縮合反応触媒と、
任意に、D)炭化水素、シリコーンオイル、またはこれらの組合せからなる群から選択されるキャリアと、
を含む耐エレクトロマイグレーション組成物から形成された耐エレクトロマイグレーション層と、
を含むプラズマディスプレイパネル。 - 前記Ag電極の上に異方性導電膜をさらに含む、請求項10に記載のプラズマディスプレイパネル。
- 成分A)が、
I)下記式の少なくとも1つの基によってその脂肪族基または脂環式基が置換された脂肪族または脂環式のモノカルボン酸またはポリカルボン酸であって、
II)
III)
IV)下記の式
V)下記の式
VI)下記の式
VII)下記の式
VIII)下記の式
IX)下記の式
X)下記の式
から選択される、請求項9、10または11に記載のプラズマディスプレイパネル。 - 成分B)が、アルコキシシラン、アミノアルキルシラン、エポキシアルキルシラン、メルカプトアルキルシランまたはこれらの組合せを含む、請求項9、10または11に記載のプラズマディスプレイパネル。
- 成分C)が存在し、ルイス酸、第一級、第二級または第三級有機アミン、金属酸化物、チタン化合物、スズ化合物、ジルコニウム化合物またはこれらの組合せから選択される触媒を含む、請求項9、10または11に記載のプラズマディスプレイパネル。
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US67961005P | 2005-05-10 | 2005-05-10 | |
US60/679,610 | 2005-05-10 | ||
PCT/US2006/017718 WO2006122025A1 (en) | 2005-05-10 | 2006-05-09 | Process for minimizing electromigration in an electronic device |
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JP2008541453A JP2008541453A (ja) | 2008-11-20 |
JP5107236B2 true JP5107236B2 (ja) | 2012-12-26 |
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US (1) | US8450931B2 (ja) |
EP (1) | EP1880416B1 (ja) |
JP (1) | JP5107236B2 (ja) |
KR (1) | KR101216577B1 (ja) |
AT (1) | ATE542239T1 (ja) |
WO (1) | WO2006122025A1 (ja) |
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US10475546B2 (en) | 2013-05-30 | 2019-11-12 | National Research Council Of Canada | Conductors comprising a functionalized organosiloxane network and methods for the preparation thereof |
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CN106153708A (zh) * | 2015-04-17 | 2016-11-23 | 北京中科纳通电子技术有限公司 | 一种测试触摸屏银浆抗银迁移能力的实验方法 |
KR101769716B1 (ko) * | 2016-08-04 | 2017-08-18 | 성균관대학교산학협력단 | 전기화학적 마이그레이션 방지 첨가제 및 이를 이용한 전기화학적 마이그레이션을 방지하는 방법 |
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- 2006-05-09 WO PCT/US2006/017718 patent/WO2006122025A1/en active Application Filing
- 2006-05-09 KR KR1020077026176A patent/KR101216577B1/ko not_active IP Right Cessation
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EP1880416B1 (en) | 2012-01-18 |
ATE542239T1 (de) | 2012-02-15 |
JP2008541453A (ja) | 2008-11-20 |
EP1880416A1 (en) | 2008-01-23 |
WO2006122025B1 (en) | 2006-12-21 |
WO2006122025A1 (en) | 2006-11-16 |
KR20080017309A (ko) | 2008-02-26 |
US20080054806A1 (en) | 2008-03-06 |
KR101216577B1 (ko) | 2013-01-02 |
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