JP5102329B2 - 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 - Google Patents
回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 Download PDFInfo
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- JP5102329B2 JP5102329B2 JP2010131079A JP2010131079A JP5102329B2 JP 5102329 B2 JP5102329 B2 JP 5102329B2 JP 2010131079 A JP2010131079 A JP 2010131079A JP 2010131079 A JP2010131079 A JP 2010131079A JP 5102329 B2 JP5102329 B2 JP 5102329B2
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- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
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- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
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- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
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- G—PHYSICS
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- G01N21/4788—Diffraction
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- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
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- G—PHYSICS
- G01—MEASURING; TESTING
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- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
- G01N2021/213—Spectrometric ellipsometry
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
- G01N2021/556—Measuring separately scattering and specular
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
- G01N2021/95615—Inspecting patterns on the surface of objects using a comparative method with stored comparision signal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Length Measuring Devices By Optical Means (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
ここで、λは、入射光の波長であり、dは、回折構造体の周期である。
Claims (23)
- 光学指数および膜厚を有する下地構造上に設けられた回折構造体の複数のパラメータを測定する方法であって、
前記回折構造体の複数のパラメータの参照データベースを前記下地構造の光学指数および膜厚を用いて構築する工程と、
前記回折構造体に複数の波長の電磁放射線を含む光線を方向付ける工程と、
前記複数の波長の電磁放射線を含む光線の前記回折構造体からの回折光の強度データを検出する工程と、
前記回折構造体の複数のパラメータを判定するために、前記検出した強度データと前記データベースとを比較する工程と、
を含む方法。 - 請求項1記載の方法において、
前記構築する工程が複数の関数からなる参照データベースを構築し、前記関数がそれぞれ前記構造体の前記複数のパラメータの値のセットに対応する方法。 - 請求項1記載の方法において、
前記方向付ける工程が前記光線を回折構造体に対して傾斜角をなして方向付け、前記傾斜角が構造体に対して直角な角度から約40〜80°の範囲にある方法。 - 請求項1記載の方法において、
前記検出する工程が、前記回折構造体から前記光線のゼロ次回折を検出する方法。 - 請求項4記載の方法において、
前記方向付ける工程が、偏光放射線を回折構造体に方向付ける方法。 - 請求項2記載の方法において、
前記関数が、それぞれ、前記回折構造体の推定線幅、高さ、または側壁角に対応する方法。 - 請求項1記載の方法において、
前記方向付ける工程が、偏光放射線を回折構造体に方向付ける方法。 - 請求項1記載の方法において、
前記構築する工程が波長のスペクトルに対して前記複数のパラメータの参照データベースを構築し、前記方向付ける工程が前記スペクトルを含む波長の広帯域放射線の光線を方向付け、前記検出する工程が前記波長のスペクトルに対して強度データを検出し、前記比較する工程が前記スペクトルの選択した部分の波長における強度データをデータベースの一部と比較する方法。 - 請求項8記載の方法において、
前記スペクトルが紫外線波長を含み、前記部分が紫外線領域の波長からなる方法。 - 請求項1記載の方法において、
前記測定を分光エリプソメータ、分光側光器、または分光反射率計から測定する方法。 - 光学指数および膜厚を有する下地構造上に設けられた回折構造体の複数のパラメータを測定する装置であって、
前記回折構造体の複数のパラメータの参照データベースを前記下地構造の光学指数および膜厚を用いて構築する手段と、
前記回折構造体に複数の波長の電磁放射線を含む光線を方向付ける手段と、
前記複数の波長の電磁放射線を含む光線の前記回折構造体からの回折光の強度データを検出する手段と、
前記回折構造体の複数のパラメータを判定するために、前記検出した強度データと前記データベースとを比較する手段と、
を備える装置。 - 請求項11記載の装置において、
前記構築する手段が複数の関数からなる参照データベースを構築し、前記関数がそれぞれ前記構造体の前記複数のパラメータの値のセットに対応する装置。 - 請求項11記載の装置において、
前記回折構造体が表面を有する材料の層を含み、前記方向付ける手段が前記光線を前記回折構造体の表面に対して傾斜角をなして方向付け、前記傾斜角が約40〜80°の範囲にある装置。 - 請求項11記載の装置において、
前記検出する手段が、前記回折構造体から前記光線のゼロ次回折を検出する装置。 - 請求項14記載の装置において、
前記方向付ける手段が、偏光器を含む装置。 - 請求項12記載の装置において、
前記関数が、それぞれ、前記回折構造体の推定線幅、高さ、または側壁角に対応する装置。 - 請求項11記載の装置において、
前記方向付ける手段が、偏光放射線を回折構造体に方向付ける装置。 - 請求項11記載の装置において、
前記構築する手段が波長のスペクトルに対して前記複数のパラメータの参照データベースを構築し、前記方向付ける手段が前記スペクトルを含む波長の広帯域放射線の光線を方向付け、前記検出する手段が前記波長のスペクトルに対して強度データを検出し、前記比較する手段が前記スペクトルの選択した部分の波長における強度データをデータベースの一部と比較する装置。 - 請求項18記載の装置において、
前記スペクトルが紫外線波長を含み、前記部分が紫外線領域の波長からなる装置。 - 請求項11記載の装置において、
前記下地構造の光学指数および膜厚を測定する手段をさらに備える装置。 - 請求項20記載の装置において、
前記測定する手段が、分光エリプソメータ、分光側光器、または分光反射率計を含む装置。 - 請求項20記載の装置において、
前記測定する手段および方向付ける手段が共通の光学要素を用い、前記要素が広帯域放射線源、偏光器、および分光計を含む装置。 - 請求項20記載の装置において、
前記測定する手段および方向付ける手段が共通の光学要素を用い、前記要素が偏光器および検光器を含み、前記偏光器および検光器は、強度データが前記構造体から検出される場合には実質的に同じ偏光の放射線を供給して出し、エリプソメトリックなパラメータが前記構造体から検出される場合には前記偏光器および検光器の間で回転が起こるように設定される装置。
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Application Number | Priority Date | Filing Date | Title |
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US09/036,557 US6483580B1 (en) | 1998-03-06 | 1998-03-06 | Spectroscopic scatterometer system |
US09/036,557 | 1998-03-06 |
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JP2000534831A Division JP4633254B2 (ja) | 1998-03-06 | 1999-02-25 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
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JP2010281822A JP2010281822A (ja) | 2010-12-16 |
JP5102329B2 true JP5102329B2 (ja) | 2012-12-19 |
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JP2000534831A Expired - Lifetime JP4633254B2 (ja) | 1998-03-06 | 1999-02-25 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
JP2009244069A Expired - Lifetime JP4643737B2 (ja) | 1998-03-06 | 2009-10-23 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
JP2009244175A Expired - Lifetime JP5563803B2 (ja) | 1998-03-06 | 2009-10-23 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
JP2009244176A Expired - Lifetime JP5249169B2 (ja) | 1998-03-06 | 2009-10-23 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
JP2010131079A Expired - Lifetime JP5102329B2 (ja) | 1998-03-06 | 2010-06-08 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
JP2012267965A Pending JP2013083659A (ja) | 1998-03-06 | 2012-12-07 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
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JP2000534831A Expired - Lifetime JP4633254B2 (ja) | 1998-03-06 | 1999-02-25 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
JP2009244069A Expired - Lifetime JP4643737B2 (ja) | 1998-03-06 | 2009-10-23 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
JP2009244175A Expired - Lifetime JP5563803B2 (ja) | 1998-03-06 | 2009-10-23 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
JP2009244176A Expired - Lifetime JP5249169B2 (ja) | 1998-03-06 | 2009-10-23 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
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JP2012267965A Pending JP2013083659A (ja) | 1998-03-06 | 2012-12-07 | 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定 |
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US (6) | US6483580B1 (ja) |
EP (2) | EP1073876B1 (ja) |
JP (6) | JP4633254B2 (ja) |
AU (1) | AU3310999A (ja) |
DE (1) | DE69922942T2 (ja) |
WO (1) | WO1999045340A1 (ja) |
Families Citing this family (255)
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US6483580B1 (en) * | 1998-03-06 | 2002-11-19 | Kla-Tencor Technologies Corporation | Spectroscopic scatterometer system |
US20020030813A1 (en) * | 1999-03-29 | 2002-03-14 | Norton Adam E. | Spectroscopic measurement system using an off-axis spherical mirror and refractive elements |
US6690473B1 (en) * | 1999-02-01 | 2004-02-10 | Sensys Instruments Corporation | Integrated surface metrology |
US6184984B1 (en) | 1999-02-09 | 2001-02-06 | Kla-Tencor Corporation | System for measuring polarimetric spectrum and other properties of a sample |
IL130874A (en) * | 1999-07-09 | 2002-12-01 | Nova Measuring Instr Ltd | System and method for measuring pattern structures |
US8531678B2 (en) | 1999-07-09 | 2013-09-10 | Nova Measuring Instruments, Ltd. | Method and system for measuring patterned structures |
US6432729B1 (en) * | 1999-09-29 | 2002-08-13 | Lam Research Corporation | Method for characterization of microelectronic feature quality |
DE19950559B4 (de) | 1999-10-20 | 2006-08-17 | Steag Eta-Optik Gmbh | Verfahren zum Bestimmen von geometrischen Strukturen auf oder in einem Substrat sowie von Materialparametern |
WO2001055669A1 (en) * | 2000-01-26 | 2001-08-02 | Timbre Technologies, Incorporated | Caching of intra-layer calculations for rapid rigorous coupled-wave analyses |
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JP4633254B2 (ja) | 2011-02-16 |
US20070091327A1 (en) | 2007-04-26 |
US6483580B1 (en) | 2002-11-19 |
AU3310999A (en) | 1999-09-20 |
US7173699B2 (en) | 2007-02-06 |
JP2010281822A (ja) | 2010-12-16 |
US20030058443A1 (en) | 2003-03-27 |
JP5249169B2 (ja) | 2013-07-31 |
JP2010133941A (ja) | 2010-06-17 |
JP2002506198A (ja) | 2002-02-26 |
JP2010066268A (ja) | 2010-03-25 |
JP4643737B2 (ja) | 2011-03-02 |
EP1508772A1 (en) | 2005-02-23 |
DE69922942T2 (de) | 2006-03-30 |
US20100165340A1 (en) | 2010-07-01 |
EP1073876A1 (en) | 2001-02-07 |
US7898661B2 (en) | 2011-03-01 |
WO1999045340A1 (en) | 1999-09-10 |
DE69922942D1 (de) | 2005-02-03 |
EP1073876B1 (en) | 2004-12-29 |
US20020033945A1 (en) | 2002-03-21 |
US20110125458A1 (en) | 2011-05-26 |
JP5563803B2 (ja) | 2014-07-30 |
EP1508772B1 (en) | 2013-08-21 |
JP2013083659A (ja) | 2013-05-09 |
JP2010133942A (ja) | 2010-06-17 |
US6590656B2 (en) | 2003-07-08 |
US7859659B2 (en) | 2010-12-28 |
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