JP5101477B2 - Method for analyzing impurities in ceramic members - Google Patents

Method for analyzing impurities in ceramic members Download PDF

Info

Publication number
JP5101477B2
JP5101477B2 JP2008313267A JP2008313267A JP5101477B2 JP 5101477 B2 JP5101477 B2 JP 5101477B2 JP 2008313267 A JP2008313267 A JP 2008313267A JP 2008313267 A JP2008313267 A JP 2008313267A JP 5101477 B2 JP5101477 B2 JP 5101477B2
Authority
JP
Japan
Prior art keywords
acidic solution
extract
droplet
ceramic member
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008313267A
Other languages
Japanese (ja)
Other versions
JP2010139255A (en
Inventor
広明 設楽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Covalent Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Covalent Materials Corp filed Critical Covalent Materials Corp
Priority to JP2008313267A priority Critical patent/JP5101477B2/en
Publication of JP2010139255A publication Critical patent/JP2010139255A/en
Application granted granted Critical
Publication of JP5101477B2 publication Critical patent/JP5101477B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Description

本発明は、セラミックス部材の表面の金属不純物を分析するセラミックス部材の不純物分析方法に関する。   The present invention relates to an impurity analysis method for a ceramic member, which analyzes metal impurities on the surface of the ceramic member.

近年、半導体デバイスの高集積化、高性能化に伴い、半導体製造装置用として用いられるセラミックス部材には、金属不純物をできる限り低減化させた高純度品であることが要求されている。特に、半導体製造装置用セラミックス部材の表面に存在する金属不純物の低減化に対する要求が厳しくなっている。
このため、高純度で高品質のセラミックス部材を製造する上で、セラミックス部材の表面の金属不純物を分析し、品質管理を行うことは重要である。
In recent years, along with the high integration and high performance of semiconductor devices, ceramic members used for semiconductor manufacturing apparatuses are required to be high-purity products in which metal impurities are reduced as much as possible. In particular, demands for reducing metal impurities present on the surface of ceramic members for semiconductor manufacturing equipment have become strict.
For this reason, in manufacturing a high purity and high quality ceramic member, it is important to analyze the metal impurities on the surface of the ceramic member and perform quality control.

前記セラミックス部材の不純物分析は、従来、直接滴下法、浸漬溶解法、マスキング法等により、前記部材の表面または全体の不純物を抽出し、回収した抽出液について、誘導結合プラズマ質量分析(ICP−MS)、誘導結合プラズマ発光分光分析(ICP−OES)、原子吸光分析(AAS)等により不純物を定量することにより行われていた。   Conventionally, impurity analysis of the ceramic member has been performed by inductively coupled plasma mass spectrometry (ICP-MS) with respect to the extracted liquid obtained by extracting impurities on the surface or the whole of the member by a direct dropping method, immersion dissolution method, masking method, or the like. ), Inductively coupled plasma optical emission spectrometry (ICP-OES), atomic absorption spectrometry (AAS), and the like.

前記各種分析に供するための抽出液を得る方法の一つである直接滴下法は、部材の表面に、フッ化水素酸、塩酸、過酸化水素水等の混合液による酸性溶液を直接滴下し、前記部材表面をエッチングして金属不純物を抽出し、この抽出液を回収する方法である(例えば、特許文献1参照)。
また、浸漬溶解法は、製品のサイズが50mm程度以下と小さい場合に適用される方法であり、フッ素樹脂製容器中の上記と同様の酸性溶液に浸漬させて、必要に応じて加圧し、金属不純物を抽出する方法である(例えば、特許文献2,3参照)。
また、マスキング法は、フッ素樹脂製シート等によりマスキングして、部材表面の一定面積の露出面について、上記と同様の酸性溶液や酸蒸気に接触させて不純物の抽出液を得る方法である。
The direct dropping method, which is one of the methods for obtaining an extract for use in the various analyses, directly drops an acidic solution of a mixed liquid such as hydrofluoric acid, hydrochloric acid, and hydrogen peroxide water on the surface of the member, In this method, the surface of the member is etched to extract metal impurities, and this extract is recovered (for example, see Patent Document 1).
The immersion dissolution method is a method applied when the size of the product is as small as about 50 mm or less, and is immersed in an acidic solution similar to the above in a fluororesin container, and pressurized as necessary. This is a method for extracting impurities (see, for example, Patent Documents 2 and 3).
Further, the masking method is a method of obtaining an impurity extract by masking with a fluororesin sheet or the like and bringing the exposed surface of the surface of the member into contact with the same acidic solution or acid vapor as described above.

特開2004−205330号公報JP 2004-205330 A 特開2000−314689号公報JP 2000-314689 A 特開2004−12315号公報JP 2004-12315 A

しかしながら、直接滴下法は、一般的に、シリコン基板表面の不純物分析に用いられる方法であり、これをセラミックス部材に適用する場合には、該部材の形状によっては、該部材の表面以外の部分がエッチングされたり、また、抽出液を回収できなかったりする等の問題があり、高精度の不純物分析に適しているとは言えなかった。   However, the direct dripping method is a method generally used for impurity analysis on the surface of a silicon substrate, and when this is applied to a ceramic member, depending on the shape of the member, a portion other than the surface of the member may be used. There are problems such as etching and the inability to recover the extract, and it has not been suitable for high-precision impurity analysis.

また、浸漬溶解法は、分析対象の部材全体を酸性溶液中に浸漬させて行わなければならず、前記部材のサイズが大きい場合には、酸性溶液および前記部材を収容する容器自体を大きくする必要があり、金属不純物を抽出するための装置自体が大型化し、煩雑となる。
また、マスキング法は、分析対象の部材が、マスキング材によって汚染されるという懸念があった。
また、上述したいずれの方法によっても、部材の表面の一部のみを効率的にエッチングして分析することは、技術的に困難であった。
In addition, the immersion dissolution method must be performed by immersing the entire member to be analyzed in an acidic solution. When the size of the member is large, the acidic solution and the container itself containing the member must be enlarged. Therefore, the apparatus itself for extracting metal impurities becomes large and complicated.
Further, the masking method has a concern that the member to be analyzed is contaminated by the masking material.
Moreover, it was technically difficult to efficiently etch and analyze only a part of the surface of the member by any of the methods described above.

本発明は、上記技術的課題を解決するためになされたものであり、セラミックス部材の表面の一部のみを効率的にエッチングすることが可能であり、また、該部材の形状により、該部材の表面以外の部分がエッチングされたり、抽出液を回収できなかったりする等の不具合が生じることなく、金属不純物の抽出液を簡便かつ効率的に回収して、該部材の表面の金属不純物を高精度で分析することができるセラミックス部材の不純物分析方法を提供することを目的とするものである。   The present invention has been made to solve the above technical problem, and it is possible to efficiently etch only a part of the surface of a ceramic member. The metal impurities extract can be easily and efficiently recovered without causing problems such as etching other than the surface or failure to recover the extract. An object of the present invention is to provide an impurity analysis method for a ceramic member that can be analyzed by the above method.

本発明に係るセラミックス部材の不純物分析方法は、セラミックス部材の表面の一部に、酸性溶液の液滴を形成した後、前記酸性溶液の膜を形成してエッチングし、金属不純物を抽出する工程と、前記金属不純物の抽出液を回収する工程と、前記抽出液に含まれる金属不純物を分析する工程とを備えていることを特徴とする。
このような方法によれば、該液滴が形成された部分の表面が若干エッチングされ、酸性溶液の膜を、広がりすぎたり、流れ落ちたりすることなく、形成することができ、セラミックス部材の表面の一部のみ確実に、効率的にエッチングすることができる。
The method for analyzing impurities of a ceramic member according to the present invention includes a step of forming a droplet of an acidic solution on a part of the surface of the ceramic member, forming a film of the acidic solution, and etching to extract metal impurities. And a step of recovering an extract of the metal impurities, and a step of analyzing the metal impurities contained in the extract.
According to such a method, the surface of the portion where the droplets are formed is slightly etched, and an acidic solution film can be formed without spreading or flowing down, and the surface of the ceramic member can be formed. Only a part can be reliably and efficiently etched.

上記分析方法においては、前記酸性溶液の膜の形成は、円周状に前記酸性溶液の液滴を形成し、前記円周状の内側方向に前記液滴を広げるように行うことが好ましい。
このような方法によれば、前記酸性溶液の膜が円周状の外側方向に広がることなく、確実に、部材の表面を局所的かつ効率的にエッチングすることができる。
In the analysis method, the acidic solution film is preferably formed so as to form droplets of the acidic solution in a circumferential shape and spread the droplets in the circumferential inner direction.
According to such a method, the surface of the member can be locally and efficiently etched reliably without spreading the film of the acidic solution in the outer circumferential direction.

また、上記分析方法においては、金属不純物の抽出液を簡便かつ効率的に回収するため、前記抽出液の回収は、前記部材の表面を傾けて、マイクロピペットを用いて行うことが好ましい。   Further, in the above analysis method, in order to easily and efficiently recover the metal impurity extract, it is preferable to collect the extract using a micropipette with the surface of the member inclined.

前記金属不純物の分析は、高感度微量分析を行う観点から、誘導結合プラズマ質量分析法(ICP−MS)またはフレームレス原子吸光分析法(FL−AA)により行うことが好ましい。   The metal impurities are preferably analyzed by inductively coupled plasma mass spectrometry (ICP-MS) or flameless atomic absorption spectrometry (FL-AA) from the viewpoint of performing highly sensitive microanalysis.

本発明によれば、部材の表面の一部のみを効率的にエッチングすることが可能であり、また、該部材の形状により、酸性溶液によって該部材の表面以外の部分がエッチングされたり、抽出液を回収できなかったりする等の不具合が解消され、金属不純物の抽出液を簡便かつ効率的に回収することができ、セラミックス部材の表面の金属不純物を高精度で分析することができる。
したがって、本発明に係る方法は、セラミックス部材の品質管理に好適に利用することができ、ひいては、該部材の品質向上に寄与することができる。
According to the present invention, it is possible to efficiently etch only a part of the surface of the member, and depending on the shape of the member, a portion other than the surface of the member is etched by an acidic solution, or an extract solution Thus, the metal impurity extract can be easily and efficiently recovered, and the metal impurities on the surface of the ceramic member can be analyzed with high accuracy.
Therefore, the method according to the present invention can be suitably used for quality control of the ceramic member, and can contribute to quality improvement of the member.

以下、本発明を、より詳細に説明する。
図1は、本発明に係るセラミックス部材の不純物分析方法を説明するための工程フロー図である。
本発明に係るセラミックス部材の不純物分析方法は、セラミックス部材の表面の一部に酸性溶液の液滴を形成した後、前記酸性溶液の膜を形成してエッチングし、金属不純物を抽出する工程(S101)と、前記金属不純物の抽出液を回収する工程(S102)と、前記抽出液に含まれる金属不純物を分析する工程(S103)とを備えている。
Hereinafter, the present invention will be described in more detail.
FIG. 1 is a process flow diagram for explaining an impurity analysis method for a ceramic member according to the present invention.
In the method for analyzing impurities of a ceramic member according to the present invention, after forming a droplet of an acidic solution on a part of the surface of the ceramic member, forming a film of the acidic solution and etching to extract metal impurities (S101) ), Recovering the metal impurity extract (S102), and analyzing the metal impurities contained in the extract (S103).

前記酸性溶液の膜の形成は、図2に示すような方法により行う。図2は、セラミックス部材の表面に酸性溶液の膜を局所的に形成する方法を説明するための断面図である。
前記酸性溶液の膜は、図2に示すように、セラミックス部材10の表面10a上に、マイクロピペット20により酸性溶液30を滴下し(図2(a))、酸性溶液30の液滴30aを形成した後(図2(b))、この液滴30aを膜状化させて形成する(図2(c))。
このような方法によれば、セラミックス部材の表面に、局所的かつ効率的に、エッチングするための酸性溶液の膜を容易に形成することができる。
前記液滴の膜状化(図2(c))は、ピペットチップを用いて、該ピペットチップのチップ部で行うことが好ましい。
これにより、前記部材の表面に容易かつ均等に前記酸性溶液の膜を形成することができる。
The acidic solution film is formed by the method shown in FIG. FIG. 2 is a cross-sectional view for explaining a method of locally forming an acidic solution film on the surface of the ceramic member.
As shown in FIG. 2, the acidic solution film is formed by dropping the acidic solution 30 onto the surface 10 a of the ceramic member 10 with the micropipette 20 (FIG. 2A) to form a droplet 30 a of the acidic solution 30. After that, the droplet 30a is formed into a film (FIG. 2C).
According to such a method, it is possible to easily form a film of an acidic solution for etching locally and efficiently on the surface of the ceramic member.
The film formation of the droplets (FIG. 2C) is preferably performed using a pipette tip at the tip portion of the pipette tip.
Thereby, the film of the acidic solution can be easily and evenly formed on the surface of the member.

より具体的には、前記酸性溶液の膜の形成は、前記部材の表面に円周状に酸性溶液の液滴を形成した後、ピペットチップを用いて、前記液滴を前記ピペットチップのチップ部でなぞりながら、前記円周状の内側方向に前記液滴を広げるように行うことが好ましい。   More specifically, the acidic solution film is formed by forming a droplet of the acidic solution circumferentially on the surface of the member, and then using the pipette tip to remove the droplet into the tip portion of the pipette tip. It is preferable that the liquid droplets are spread in the circumferential inner direction while tracing.

図3は、酸性溶液の膜を局所的に形成する工程の他の態様を説明するための上面図である。
図3においては、最初に、セラミックス部材10の表面10aに、円周状に酸性溶液の液滴30bを形成する(図3(a))。この円周状の液滴30bの形成は、例えば、ピペットチップを用い、ピペットチップを倒して、前記表面10a上をなぞりながら行う。
次に、ピペットチップを用いて、前記液滴30bを該ピペットチップのチップ部でなぞりながら、前記円周状の内側方向に液滴30bを広げるようにして膜を形成する(図3(b))。
このような方法によれば、前記円周状の液滴を形成した際、該液滴を形成した部分の部材の表面は若干エッチングされるため、前記液滴がその外側方向に広がることなく、確実に、部材の表面を、局所的かつ効率的にエッチングすることが可能となる。
FIG. 3 is a top view for explaining another aspect of the step of locally forming the acidic solution film.
In FIG. 3, first, a droplet 30b of an acidic solution is formed circumferentially on the surface 10a of the ceramic member 10 (FIG. 3 (a)). The circumferential droplet 30b is formed by, for example, using a pipette tip, tilting the pipette tip, and tracing on the surface 10a.
Next, using a pipette tip, a film is formed by spreading the droplet 30b in the circumferential inner direction while tracing the droplet 30b on the tip portion of the pipette tip (FIG. 3B). ).
According to such a method, when the circumferential droplet is formed, the surface of the member in the portion where the droplet is formed is slightly etched, so that the droplet does not spread outwardly, It is possible to reliably and locally etch the surface of the member.

上記のようにして酸性溶液の膜を形成した後、所定時間放置して、前記酸性溶液により部材10の表面10aの前記膜を形成した部分をエッチングし、金属不純物を抽出する。   After the acidic solution film is formed as described above, the film is left for a predetermined time, and the portion of the surface 10a of the member 10 where the film is formed is etched with the acidic solution to extract metal impurities.

前記金属不純物の抽出液の回収は、図4に示すような方法で行うことができる。図4は、前記酸性溶液の膜により抽出した抽出液を回収する工程を説明するための断面図である。
図4に示すように、液滴30a(30b)の膜が形成されたセラミックス部材10の表面10aを傾け、膜状化した液滴30a(30b)を、液滴状態に戻した状態(図4(b))で、マイクロピペット(図示せず)を用いて、抽出液を回収する。
このような方法によれば、前記抽出液の回収の際、マイクロピペットのみを用いれば足り、操作性の点からも簡便であり、効率的に行うことができる。
The extraction of the metal impurity extract can be performed by a method as shown in FIG. FIG. 4 is a cross-sectional view for explaining a process of recovering the extract extracted by the acidic solution membrane.
As shown in FIG. 4, the surface 10a of the ceramic member 10 on which the film of the droplet 30a (30b) is formed is tilted, and the film-like droplet 30a (30b) is returned to the droplet state (FIG. 4). In (b)), the extract is recovered using a micropipette (not shown).
According to such a method, it is sufficient to use only a micropipette when collecting the extract, which is simple from the viewpoint of operability and can be performed efficiently.

本発明においては、エッッチングのために使用する酸性溶液は、特に限定されず、塩酸、硫酸等を用いることができる。   In the present invention, the acidic solution used for etching is not particularly limited, and hydrochloric acid, sulfuric acid and the like can be used.

また、前記抽出液に含まれる金属不純物の分析は、高感度微量分析を迅速に行う観点から、ICP−MSやFL−AAを用いて行うことが好ましい。
このような装置分析によれば、1010atoms/cm2オーダーでの高精度分析も可能である。
The analysis of metal impurities contained in the extract is preferably performed using ICP-MS or FL-AA from the viewpoint of promptly performing a highly sensitive microanalysis.
According to such an apparatus analysis, a high-precision analysis on the order of 10 10 atoms / cm 2 is also possible.

また、上記分析方法を用いることにより、同一領域を複数回繰り返しエッチングし、1回毎の抽出液に含まれる金属不純物量を求め、また、当該1回につきエッチングされたセラミックス部材の厚さと照合して、該部材表面からの深さ方向における不純物量分布も求めることもできる。   Further, by using the above analysis method, the same region is repeatedly etched several times, the amount of metal impurities contained in each extraction liquid is obtained, and the thickness of the ceramic member etched each time is checked. Thus, the impurity amount distribution in the depth direction from the surface of the member can also be obtained.

以下、本発明を実施例に基づきさらに具体的に説明するが、本発明は下記実施例により制限されるものではない。
[実施例1]
アルミナセラミックス製の平板の表面上に、濃度3.0%の塩酸2mlをマイクロピペットにより滴下して、該表面上に液滴を形成した後、ピペットチップのチップ部で、該液滴を膜状化させた。
この状態で3分間保持し、前記平板の表面をエッチングした。その際、水平方向(該表面と平行な方向)に軽い振動を与え、前記平板の表面上のエッチング液(塩酸)の膜の移動の有無を観察したところ、形成された膜の位置は動かなかった。
その後、前記平板の表面を傾けて、マイクロピペットを用いて、エッチングした抽出液を回収したところ、約1.7mlを回収することができた。
EXAMPLES Hereinafter, although this invention is demonstrated more concretely based on an Example, this invention is not restrict | limited by the following Example.
[Example 1]
2 ml of 3.0% hydrochloric acid is dropped on the surface of a plate made of alumina ceramics with a micropipette to form a droplet on the surface, and then the droplet is formed into a film at the tip of the pipette tip. Made it.
This state was maintained for 3 minutes, and the surface of the flat plate was etched. At that time, when a slight vibration was given in the horizontal direction (direction parallel to the surface) and the presence or absence of the movement of the etching solution (hydrochloric acid) film on the surface of the flat plate was observed, the position of the formed film did not move. It was.
Then, when the surface of the flat plate was tilted and the extracted extract was recovered using a micropipette, about 1.7 ml could be recovered.

[実施例2]
アルミナセラミックス製の平板の表面上に、濃度3.0%の塩酸2mlを1mlずつ2回に分けて、マイクロピペットにより、該表面上を軽くなぞりながら、該表面上に直径約2インチの円周状の液滴を形成した後、ピペットチップを用いて、前記液滴をピペットチップのチップ部でなぞりながら、前記円周状の内側方向に該液滴を広げて、前記液滴を膜状化させた。
この状態で3分間保持し、前記平板の表面をエッチングした。その際、水平方向(該表面と平行な方向)に軽い振動を与え、前記平板の表面上のエッチング液(塩酸)の膜の移動の有無を観察したところ、形成された膜の位置は動かなかった。
その後、前記平板の表面を傾けて、マイクロピペットを用いて、エッチングした抽出液を回収したところ、約1.6mlを回収することができた。
[Example 2]
On a surface of an alumina ceramic flat plate, 2 ml of hydrochloric acid with a concentration of 3.0% is divided into two 1 ml portions, and a micropipette is used to gently trace the circumference of the surface with a diameter of about 2 inches on the surface. After forming a droplet, the pipette tip is used to trace the droplet at the tip portion of the pipette tip, spreading the droplet in the circumferential inner direction, and forming the droplet into a film. I let you.
This state was maintained for 3 minutes, and the surface of the flat plate was etched. At that time, when a slight vibration was given in the horizontal direction (direction parallel to the surface) and the presence or absence of the movement of the etching solution (hydrochloric acid) film on the surface of the flat plate was observed, the position of the formed film did not move. It was.
Then, when the surface of the flat plate was tilted and the extracted extract was recovered using a micropipette, about 1.6 ml could be recovered.

[比較例1]
液滴を膜状化させず、それ以外は、実施例1と同様にして、前記平板の表面をエッチングした。その際、水平方向(該表面と平行な方向)に軽い振動を与え、液滴の移動の有無を観察したところ、液滴は最初に形成した位置から水平方向に移動したことが確認された。
[Comparative Example 1]
The surface of the flat plate was etched in the same manner as in Example 1 except that the droplet was not formed into a film. At that time, light vibration was applied in the horizontal direction (direction parallel to the surface) and the presence or absence of movement of the droplet was observed, and it was confirmed that the droplet moved in the horizontal direction from the position where it was first formed.

本発明に係るセラミックス部材の不純物分析方法を説明するための工程フロー図である。It is a process flowchart for demonstrating the impurity analysis method of the ceramic member which concerns on this invention. セラミックス部材の表面に酸性溶液の膜を局所的に形成する方法を説明するための断面図である。It is sectional drawing for demonstrating the method to form the film | membrane of an acidic solution locally on the surface of a ceramic member. 酸性溶液の膜を局所的に形成する他の態様の工程を示す上面図である。It is a top view which shows the process of the other aspect which forms the film | membrane of an acidic solution locally. 酸性溶液の膜により抽出した抽出液を回収する工程を説明するための断面図である。It is sectional drawing for demonstrating the process of collect | recovering the extract extracted with the film | membrane of an acidic solution.

符号の説明Explanation of symbols

10 セラミックス部材
20 マイクロピペット
30 酸性溶液
10 Ceramic member 20 Micropipette 30 Acidic solution

Claims (3)

セラミックス部材の表面の一部に、円周状に酸性溶液の液滴を形成し、前記円周状の内側方向に前記液滴を広げるようにして、前記酸性溶液の膜を形成してエッチングし、金属不純物を抽出する工程と、前記金属不純物の抽出液を回収する工程と、前記抽出液に含まれる金属不純物を分析する工程とを備えていることを特徴とするセラミックス部材の不純物分析方法。 An acidic solution droplet is formed circumferentially on a part of the surface of the ceramic member, and the acidic solution film is formed and etched by spreading the droplet in the circumferential inner direction. A method for analyzing impurities of a ceramic member, comprising: a step of extracting metal impurities, a step of recovering an extract of the metal impurities, and a step of analyzing metal impurities contained in the extract. 前記抽出液の回収は、前記部材の表面を傾けて、マイクロピペットを用いて行うことを特徴とする請求項記載のセラミックス部材の不純物分析方法。 Recovery of the extract, by tilting the surface of said member, impurity analysis method according to claim 1, wherein the ceramic member and performing using a micropipette. 前記金属不純物の分析は、誘導結合プラズマ質量分析法またはフレームレス原子吸光分析法により行うことを特徴とする請求項1または2に記載のセラミックス部材の不純物分析方法。 The method for analyzing impurities of a ceramic member according to claim 1 or 2 , wherein the analysis of the metal impurities is performed by inductively coupled plasma mass spectrometry or flameless atomic absorption spectrometry.
JP2008313267A 2008-12-09 2008-12-09 Method for analyzing impurities in ceramic members Active JP5101477B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008313267A JP5101477B2 (en) 2008-12-09 2008-12-09 Method for analyzing impurities in ceramic members

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008313267A JP5101477B2 (en) 2008-12-09 2008-12-09 Method for analyzing impurities in ceramic members

Publications (2)

Publication Number Publication Date
JP2010139255A JP2010139255A (en) 2010-06-24
JP5101477B2 true JP5101477B2 (en) 2012-12-19

Family

ID=42349524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008313267A Active JP5101477B2 (en) 2008-12-09 2008-12-09 Method for analyzing impurities in ceramic members

Country Status (1)

Country Link
JP (1) JP5101477B2 (en)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6378057A (en) * 1986-09-20 1988-04-08 Mitsubishi Electric Corp Analysis of impurity
JP2956733B2 (en) * 1992-07-06 1999-10-04 松下電子工業株式会社 Sample preparation method for total reflection X-ray fluorescence analysis
JPH09318507A (en) * 1996-05-29 1997-12-12 Nec Corp Recovery method and recovery equipment of surface contaminant
JPH1114618A (en) * 1997-06-20 1999-01-22 Showa Denko Kk Analytical equipment and analytical method of impurities of semiconductor wafer
JP3116871B2 (en) * 1997-09-03 2000-12-11 日本電気株式会社 Pretreatment method and apparatus for semiconductor substrate surface analysis
JPH11183341A (en) * 1997-12-25 1999-07-09 Sony Corp Support rod guided liquid phase resolving method and device
JPH11211633A (en) * 1998-01-26 1999-08-06 Mitsubishi Electric Corp Method for analyzing impurity on silicon wafer surface
JP2000314689A (en) * 1999-04-28 2000-11-14 Toshiba Ceramics Co Ltd Method for preparing sample for analyzing impurities in depth direction of alumina sintered body and impurity analyzing method using the method
JP4073138B2 (en) * 2000-02-07 2008-04-09 東京エレクトロン株式会社 Method for analyzing metals contained in quartz
JP3790160B2 (en) * 2001-12-28 2006-06-28 株式会社東芝 Sample decomposition processing apparatus and impurity analysis method using the same
JP2004012315A (en) * 2002-06-07 2004-01-15 Toshiba Ceramics Co Ltd Methods of measuring impurity concentration distribution in silicon carbide material or silicon nitride material, and impurity concentration distribution in ceramics
JP2005265718A (en) * 2004-03-19 2005-09-29 Sumitomo Mitsubishi Silicon Corp Analytical method for impurity

Also Published As

Publication number Publication date
JP2010139255A (en) 2010-06-24

Similar Documents

Publication Publication Date Title
JP6108367B1 (en) Silicon substrate analyzer
WO2009057764A1 (en) Etching method and method for manufacturing optical/electronic device using the same
JP6118031B2 (en) Impurity analysis apparatus and method
US11282731B2 (en) Wafer cutting device and method
JP2014041030A (en) Impurity analysis method of semiconductor substrate
JP5101477B2 (en) Method for analyzing impurities in ceramic members
Kirchner et al. Anisotropic etching of pyramidal silica reliefs with metal masks and hydrofluoric acid
US8815107B2 (en) Method of etching surface layer portion of silicon wafer and method of analyzing metal contamination of silicon wafer
JP4881656B2 (en) Analysis method of quartz member
JP4877897B2 (en) Method for removing impurities from silicon wafer and analysis method
JP5083089B2 (en) Method for analyzing metal impurities in the surface layer of silicon material
JP2009294091A (en) Analyzing method of contaminant in silicon wafer
JP5162569B2 (en) Analytical method of ultra-trace impurity metals on silicon wafer surface
JP5407609B2 (en) Silicon wafer evaluation method
WO2013084948A1 (en) Container, vapor phase cracking method, vapor phase cracking device, analysis method, and analysis device
JP4760458B2 (en) Method for analyzing metal contamination of semiconductor wafer storage container
JP2011257436A (en) Quartz member
JP2013115261A (en) Recovery method of impurity on semiconductor substrate surface and quantitative analysis method for impurity
TWI692049B (en) Wafer surface inspection pre-processing device and wafer surface inspection equipment using the same
JP5152860B2 (en) Surface analysis method for quartz glass products
JP2005291993A (en) Surface layer analysis method of silicon wafer
KR101394311B1 (en) Vessel for Analysis of Trace Element
KR20210071432A (en) Device of analyzing impurities and method of analyzing impurities
JP2010145170A (en) Method for analysis of silicon wafer
Bajwa Metal Assisted Chemical Etching

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110909

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120718

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120719

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120906

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120924

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120926

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151005

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 5101477

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350