JP5090536B2 - 基板処理方法及び基板処理装置 - Google Patents
基板処理方法及び基板処理装置 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 96
- 239000000758 substrate Substances 0.000 title claims description 86
- 238000003672 processing method Methods 0.000 title claims description 9
- 238000001179 sorption measurement Methods 0.000 claims description 30
- 238000012546 transfer Methods 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 55
- 239000004065 semiconductor Substances 0.000 description 40
- 238000000034 method Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000002826 coolant Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009434 installation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Description
また、本発明の他の一態様によれば、ガス導入口を介してガス導入可能であり、且つ排気口を介して排気可能な処理室と、基板を静電吸着可能な静電吸着面と基板温度制御機構とを有し、前記処理室内で回転可能に設けられた静電チャックテーブルと、前記処理室内で前記基板を前記静電吸着面に対して移動させる移動機構と、前記処理室内の圧力及び前記移動機構の動作を制御する制御装置であって、前記基板を前記静電吸着面に対して離間させた状態で前記処理室内を前記基板の処理時における第1の圧力よりも高い第2の圧力にし、この第2の圧力下で前記基板を前記静電吸着面に対して移動し前記静電吸着面に吸着させ、前記基板が前記静電吸着面に吸着された状態で前記処理室内の圧力を前記第2の圧力から前記第1の圧力にし、この第1の圧力下で前記基板の処理を行わせる制御装置と、を備えたことを特徴とする基板処理装置が提供される。
また、本発明のさらに他の一態様によれば、ガス導入口を介してガス導入可能であり、且つ排気口を介して排気可能な処理室と、基板を静電吸着可能な静電吸着面と基板温度制御機構とを有し、前記処理室内で回転可能に設けられた静電チャックテーブルと、前記処理室内で前記基板を前記静電吸着面に対して移動させる移動機構と、を備え、前記基板が前記静電吸着面に吸着された状態で前記基板と前記静電吸着面との間には、前記基板の処理時における第1の圧力よりも高い第2の圧力下で前記処理室内に存在していたガスが介在され、前記ガスを媒体に前記基板と前記静電チャックテーブルとの間で熱伝達を行わせて前記基板を加熱または冷却可能であることを特徴とする基板処理装置が提供される。
13 ガス導入口
16 排気口
21 静電チャックテーブル
22 ベース部材
23 誘電体
23a 静電吸着面
25 ヒーター
26 回転軸
27 冷却液流路
31 リフト機構
41 凹部
50 制御装置
Claims (5)
- 減圧下の処理室内で、静電チャックテーブルの静電吸着面に吸着された基板に対して処理を行う基板処理方法であって、
前記基板を前記静電吸着面に対して離間させた状態で、前記処理室内を前記処理時における第1の圧力よりも高い第2の圧力にするステップと、
前記第2の圧力下で前記基板を前記静電吸着面に対して移動させて前記基板を前記静電吸着面に吸着させ、前記基板と前記静電吸着面との間に前記第2の圧力下で前記処理室内に存在していたガスを介在させるステップと、
前記ガスを媒体に前記基板と前記静電チャックテーブルとの間で熱伝達を行わせ、前記基板を加熱または冷却するステップと、
前記処理室内を排気して前記第1の圧力にし、前記第1の圧力下で前記基板の処理を行うステップと、
を備えたことを特徴とする基板処理方法。 - 前記基板を吸着した状態の前記静電チャックテーブルを回転させながら、前記基板に対して前記第1の圧力下で前記処理を行うことを特徴とする請求項1記載の基板処理方法。
- ガス導入口を介してガス導入可能であり、且つ排気口を介して排気可能な処理室と、
基板を静電吸着可能な静電吸着面と基板温度制御機構とを有し、前記処理室内で回転可能に設けられた静電チャックテーブルと、
前記処理室内で前記基板を前記静電吸着面に対して移動させる移動機構と、
前記処理室内の圧力及び前記移動機構の動作を制御する制御装置であって、前記基板を前記静電吸着面に対して離間させた状態で前記処理室内を前記基板の処理時における第1の圧力よりも高い第2の圧力にし、この第2の圧力下で前記基板を前記静電吸着面に対して移動し前記静電吸着面に吸着させ、前記基板が前記静電吸着面に吸着された状態で前記処理室内の圧力を前記第2の圧力から前記第1の圧力にし、この第1の圧力下で前記基板の処理を行わせる制御装置と、
を備えたことを特徴とする基板処理装置。 - ガス導入口を介してガス導入可能であり、且つ排気口を介して排気可能な処理室と、
基板を静電吸着可能な静電吸着面と基板温度制御機構とを有し、前記処理室内で回転可能に設けられた静電チャックテーブルと、
前記処理室内で前記基板を前記静電吸着面に対して移動させる移動機構と、
を備え、
前記基板が前記静電吸着面に吸着された状態で前記基板と前記静電吸着面との間には、前記基板の処理時における第1の圧力よりも高い第2の圧力下で前記処理室内に存在していたガスが介在され、前記ガスを媒体に前記基板と前記静電チャックテーブルとの間で熱伝達を行わせて前記基板を加熱または冷却可能であることを特徴とする基板処理装置。 - 前記静電吸着面には、前記処理室内に臨む凹部が形成され、
前記凹部は、前記処理室の外部のガス供給系にはつながらずに、前記静電チャックテーブル内で閉じた空間として形成され、
前記凹部には、前記基板が前記静電吸着面に吸着された状態で前記ガスを封入可能であることを特徴とする請求項3または4に記載の基板処理装置。
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JP2010539190A JP5090536B2 (ja) | 2008-11-21 | 2009-10-19 | 基板処理方法及び基板処理装置 |
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JP2008298571 | 2008-11-21 | ||
JP2008298571 | 2008-11-21 | ||
JP2010539190A JP5090536B2 (ja) | 2008-11-21 | 2009-10-19 | 基板処理方法及び基板処理装置 |
PCT/JP2009/067995 WO2010058672A1 (ja) | 2008-11-21 | 2009-10-19 | 基板処理方法及び基板処理装置 |
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JPWO2010058672A1 JPWO2010058672A1 (ja) | 2012-04-19 |
JP5090536B2 true JP5090536B2 (ja) | 2012-12-05 |
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JP2010539190A Active JP5090536B2 (ja) | 2008-11-21 | 2009-10-19 | 基板処理方法及び基板処理装置 |
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JP (1) | JP5090536B2 (ja) |
KR (1) | KR101241570B1 (ja) |
CN (1) | CN102217055B (ja) |
TW (1) | TWI467692B (ja) |
WO (1) | WO2010058672A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5478280B2 (ja) * | 2010-01-27 | 2014-04-23 | 東京エレクトロン株式会社 | 基板加熱装置および基板加熱方法、ならびに基板処理システム |
CN102903652A (zh) * | 2011-07-29 | 2013-01-30 | 细美事有限公司 | 衬底处理装置和方法 |
JP5959216B2 (ja) * | 2012-02-06 | 2016-08-02 | 日東電工株式会社 | 基板搬送方法および基板搬送装置 |
GB201305674D0 (en) * | 2013-03-28 | 2013-05-15 | Spts Technologies Ltd | Method and apparatus for processing a semiconductor workpiece |
JP5800969B1 (ja) * | 2014-08-27 | 2015-10-28 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラム、記録媒体 |
US10546768B2 (en) | 2015-02-25 | 2020-01-28 | Corning Incorporated | Apparatus and method to electrostatically chuck substrates to a moving carrier |
US20190010603A1 (en) * | 2015-12-29 | 2019-01-10 | Corning Incorporated | Electrostatic chucking of cover glass substrates in a vacuum coating process |
JP7039234B2 (ja) * | 2017-09-29 | 2022-03-22 | 芝浦メカトロニクス株式会社 | 成膜装置 |
CN108611615B (zh) * | 2018-06-21 | 2020-05-15 | 中国电子科技集团公司第四十八研究所 | 一种用于磁控溅射镀膜的基片台 |
JP7134039B2 (ja) * | 2018-09-14 | 2022-09-09 | 東京エレクトロン株式会社 | 基板載置機構、成膜装置、および成膜方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002076105A (ja) * | 2000-06-14 | 2002-03-15 | Anelva Corp | 静電吸着機構及び表面処理装置 |
JP2004253789A (ja) * | 2003-01-29 | 2004-09-09 | Kyocera Corp | 静電チャック |
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JPH07231034A (ja) * | 1994-02-17 | 1995-08-29 | Hitachi Ltd | 板状物の固定方法および装置ならびにプラズマ処理装置 |
US6813431B2 (en) * | 2002-02-26 | 2004-11-02 | Intel Corporation | Integrated photodevice and waveguide |
JP4421874B2 (ja) * | 2003-10-31 | 2010-02-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
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- 2009-10-19 JP JP2010539190A patent/JP5090536B2/ja active Active
- 2009-10-19 WO PCT/JP2009/067995 patent/WO2010058672A1/ja active Application Filing
- 2009-10-19 CN CN200980146353XA patent/CN102217055B/zh not_active Expired - Fee Related
- 2009-10-19 KR KR1020117014033A patent/KR101241570B1/ko active IP Right Grant
- 2009-11-03 TW TW98137260A patent/TWI467692B/zh not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002076105A (ja) * | 2000-06-14 | 2002-03-15 | Anelva Corp | 静電吸着機構及び表面処理装置 |
JP2004253789A (ja) * | 2003-01-29 | 2004-09-09 | Kyocera Corp | 静電チャック |
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Publication number | Publication date |
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TW201027665A (en) | 2010-07-16 |
KR20110084546A (ko) | 2011-07-25 |
WO2010058672A1 (ja) | 2010-05-27 |
CN102217055A (zh) | 2011-10-12 |
JPWO2010058672A1 (ja) | 2012-04-19 |
KR101241570B1 (ko) | 2013-03-11 |
CN102217055B (zh) | 2013-09-18 |
TWI467692B (zh) | 2015-01-01 |
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