JP5090163B2 - バイポーラ・トランジスタおよびその製造方法 - Google Patents
バイポーラ・トランジスタおよびその製造方法 Download PDFInfo
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- JP5090163B2 JP5090163B2 JP2007520947A JP2007520947A JP5090163B2 JP 5090163 B2 JP5090163 B2 JP 5090163B2 JP 2007520947 A JP2007520947 A JP 2007520947A JP 2007520947 A JP2007520947 A JP 2007520947A JP 5090163 B2 JP5090163 B2 JP 5090163B2
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- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 125000004429 atom Chemical group 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 230000007423 decrease Effects 0.000 claims description 2
- 230000001934 delay Effects 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 230000005684 electric field Effects 0.000 description 10
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7317—Bipolar thin film transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66265—Thin film bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
- H01L29/365—Planar doping, e.g. atomic-plane doping, delta-doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
Claims (13)
- 第1の導電型であるエミッタ領域と、第1の導電型と反対の第2の導電型であるベース領域と、第1の導電型であるコレクタ領域とを有し、投影図法で見て、前記エミッタ領域は前記ベース領域の上または下に位置し、前記コレクタ領域は前記ベース領域と横方向に境界を接するバイポーラ・トランジスタを含む半導体基体を備える半導体装置であって、
前記ベース領域は、ドーピング濃度が厚さ方向にデルタ形状のプロファイルを有する部分領域を含み、
前記部分領域が、前記ベース領域中の部分領域以外の領域より高濃度にドーピングされており、且つ、前記コレクタ領域まで横方向に延びていることを特徴とする半導体装置。 - 前記半導体基体がシリコンを含んでおり、前記部分領域のドーピング濃度が1019 〜1020原子/cm3の範囲であり、前記部分領域の厚さが1〜15nmの範囲、好ましくは1〜10nmの範囲であることを特徴とする請求項1に記載の半導体装置。
- 前記ベース領域が、シリコンとゲルマニウムの混晶を含むことを特徴とする請求項1または2に記載の半導体装置。
- 前記部分領域が、前記部分領域のドーピング原子の拡散の進行を遅らせる原子を備えることを特徴とする請求項3に記載の半導体装置。
- 前記拡散の進行を遅らせる原子に、炭素原子が用いられることを特徴とする請求項4に記載の半導体装置。
- 前記第1の導電型がn導電型であり、前記ベース領域をドーピングするためにホウ素原子が用いられることを特徴とする請求項1ないし5のいずれか一項に記載の半導体装置。
- 前記半導体基体が、前記ベース領域の下に歪み緩和バッファ(SRB)層を含むことを特徴とする請求項1ないし6のいずれか一項に記載の半導体装置。
- 前記半導体基体が、電気的絶縁層によって半導体基板から分離されることを特徴とする請求項1ないし7のいずれか一項に記載の半導体装置。
- 前記コレクタ領域から前記エミッタ領域までの距離が、投影図法で見て、前記ベース領域の方向に減少することを特徴とする請求項1ないし8のいずれか一項に記載の半導体装置。
- 大電力用途に適していることを特徴とする請求項1ないし9のいずれか一項に記載の半導体装置。
- 第1の導電型であるエミッタ領域と、第1の導電型と反対の第2の導電型であるベース領域と、第1の導電型であるコレクタ領域とを有し、投影図法で見て、前記エミッタ領域は前記ベース領域の上または下に形成され、前記コレクタ領域は前記ベース領域と横方向に境界を接するように形成されたバイポーラ・トランジスタが設けられた半導体基体を備える半導体装置を製造する方法であって、
前記ベース領域中に、部分領域が形成されており、
前記部分領域は、前記ベース領域中の前記部分領域以外の領域より高濃度にドーピングされており、ドーピング濃度が、厚さ方向にデルタ形状のプロファイルを有し、且つ、前記コレクタ領域まで横方向に延びるように形成されることを特徴とする方法。 - 前記ベース領域が、エピタキシを用いて形成されることを特徴とする請求項11に記載の方法。
- 前記第1の導電型としてn導電型が選択され、前記ベース領域用のドーパントとしてホウ素原子が選択されることを特徴とする請求項11または12に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04103382.0 | 2004-07-15 | ||
EP04103382 | 2004-07-15 | ||
PCT/IB2005/052260 WO2006008689A1 (en) | 2004-07-15 | 2005-07-07 | Bipolar transistor and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008507125A JP2008507125A (ja) | 2008-03-06 |
JP5090163B2 true JP5090163B2 (ja) | 2012-12-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007520947A Expired - Fee Related JP5090163B2 (ja) | 2004-07-15 | 2005-07-07 | バイポーラ・トランジスタおよびその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7671447B2 (ja) |
EP (1) | EP1771887B1 (ja) |
JP (1) | JP5090163B2 (ja) |
AT (1) | ATE400063T1 (ja) |
DE (1) | DE602005007904D1 (ja) |
TW (1) | TW200620652A (ja) |
WO (1) | WO2006008689A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8669640B2 (en) | 2009-07-14 | 2014-03-11 | Freescale Semiconductor, Inc. | Bipolar transistor |
US9059195B2 (en) | 2013-05-29 | 2015-06-16 | International Business Machines Corporation | Lateral bipolar transistors having partially-depleted intrinsic base |
US9496184B2 (en) | 2014-04-04 | 2016-11-15 | International Business Machines Corporation | III-V, SiGe, or Ge base lateral bipolar transistor and CMOS hybrid technology |
US11245639B2 (en) | 2014-09-03 | 2022-02-08 | International Business Machines Corporation | Composition of persistent object instances linking resources across multiple, disparate systems |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01241156A (ja) * | 1988-03-23 | 1989-09-26 | Hitachi Ltd | 半導体装置 |
US5198692A (en) * | 1989-01-09 | 1993-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device including bipolar transistor with step impurity profile having low and high concentration emitter regions |
DE69109884T2 (de) * | 1990-02-09 | 1995-10-26 | Canon Kk | Tintenstrahlaufzeichnungssystem. |
JPH0499328A (ja) * | 1990-08-18 | 1992-03-31 | Nec Corp | バイポーラトランジスタ |
JPH05166825A (ja) * | 1991-12-17 | 1993-07-02 | Hitachi Ltd | 半導体装置 |
JP3233690B2 (ja) * | 1992-07-16 | 2001-11-26 | ローム株式会社 | バイポーラトランジスタの製法 |
JPH06252158A (ja) * | 1993-02-26 | 1994-09-09 | Toshiba Corp | 半導体装置 |
FR2778022B1 (fr) * | 1998-04-22 | 2001-07-13 | France Telecom | Transistor bibolaire vertical, en particulier a base a heterojonction sige, et procede de fabrication |
JP3708881B2 (ja) * | 2001-01-31 | 2005-10-19 | 松下電器産業株式会社 | 半導体結晶膜,その製造方法,半導体装置及びその製造方法 |
JP2002270815A (ja) * | 2001-03-14 | 2002-09-20 | Hitachi Ltd | 半導体装置及びその半導体装置により構成された駆動回路 |
DE10160509A1 (de) * | 2001-11-30 | 2003-06-12 | Ihp Gmbh | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
JP3565274B2 (ja) * | 2002-02-25 | 2004-09-15 | 住友電気工業株式会社 | バイポーラトランジスタ |
JP3719998B2 (ja) * | 2002-04-01 | 2005-11-24 | 松下電器産業株式会社 | 半導体装置の製造方法 |
-
2005
- 2005-07-07 JP JP2007520947A patent/JP5090163B2/ja not_active Expired - Fee Related
- 2005-07-07 DE DE602005007904T patent/DE602005007904D1/de active Active
- 2005-07-07 US US11/632,614 patent/US7671447B2/en active Active
- 2005-07-07 AT AT05759723T patent/ATE400063T1/de not_active IP Right Cessation
- 2005-07-07 EP EP05759723A patent/EP1771887B1/en not_active Not-in-force
- 2005-07-07 WO PCT/IB2005/052260 patent/WO2006008689A1/en active IP Right Grant
- 2005-07-12 TW TW094123615A patent/TW200620652A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
EP1771887B1 (en) | 2008-07-02 |
JP2008507125A (ja) | 2008-03-06 |
US20080083968A1 (en) | 2008-04-10 |
EP1771887A1 (en) | 2007-04-11 |
WO2006008689A1 (en) | 2006-01-26 |
TW200620652A (en) | 2006-06-16 |
ATE400063T1 (de) | 2008-07-15 |
DE602005007904D1 (de) | 2008-08-14 |
US7671447B2 (en) | 2010-03-02 |
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