JP5078460B2 - Laser processing apparatus and laser processing method - Google Patents

Laser processing apparatus and laser processing method Download PDF

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JP5078460B2
JP5078460B2 JP2007170112A JP2007170112A JP5078460B2 JP 5078460 B2 JP5078460 B2 JP 5078460B2 JP 2007170112 A JP2007170112 A JP 2007170112A JP 2007170112 A JP2007170112 A JP 2007170112A JP 5078460 B2 JP5078460 B2 JP 5078460B2
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輝尚 川▲崎▼
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Sumitomo Heavy Industries Ltd
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Description

本発明は、加工対象物にレーザビームを照射して加工を行うレーザ加工装置、及び、レーザ加工方法に関する。   The present invention relates to a laser processing apparatus that performs processing by irradiating a workpiece with a laser beam, and a laser processing method.

液晶パネルの一製造工程において、ガラス基板上に形成されたアモルファスシリコン膜にレーザビームを照射し、アモルファスシリコン膜の結晶化（レーザアニール）が行われる。   In one manufacturing process of a liquid crystal panel, an amorphous silicon film formed on a glass substrate is irradiated with a laser beam to crystallize the amorphous silicon film (laser annealing).

このレーザアニールにおいては、ガラス基板全面を吸着盤に吸着し、高さ検出器でガラス基板の高さを検出して、アモルファスシリコン膜がレーザビームの焦点深度内に位置するように、ガラス基板を吸着盤とともに昇降させる。   In this laser annealing, the entire surface of the glass substrate is adsorbed to the suction disk, the height of the glass substrate is detected by a height detector, and the glass substrate is placed so that the amorphous silicon film is positioned within the focal depth of the laser beam. Raise and lower with the suction board.

しかしこの方法によれば、吸着盤に高い平面度が要求される。また、ガラス基板と吸着盤の双方を移動して高さを調節するため、移動部の重量が大きくなり制御性が悪い。更に、ガラス基板自体がもつうねりや厚さのばらつきに対処するのが困難であった。   However, this method requires high flatness of the suction disk. In addition, since the height is adjusted by moving both the glass substrate and the suction disk, the weight of the moving part increases and the controllability is poor. Furthermore, it has been difficult to cope with the waviness and thickness variations of the glass substrate itself.

吸着盤を用いず、「基板設置部であるワーク受けにエアが吹き出す機構を設けることで、基板とワーク受けにギャップを形成し、さらにそのギャップが一定の距離を保つようにセンサーでエア流量を制御する機構を備えたレーザ加工装置」の発明が開示されている（たとえば、特許文献１参照）。   Without using a suction board, “By providing a mechanism to blow out air to the work receiver that is the board installation part, a gap is formed between the substrate and the work receiver, and the air flow rate is controlled by the sensor so that the gap is kept at a constant distance. An invention of a “laser processing apparatus provided with a control mechanism” is disclosed (for example, see Patent Document 1).

特許文献１記載のレーザ加工装置は、基板を載置するワーク受けを備えたステージを含んで構成される。ワーク受けは、基板とのギャップを形成するためのエア吹き出し口、及び、各エア吹き出し口に対応して設けられ、基板とワーク受けとの間隔を測定するギャップセンサを含む。   The laser processing apparatus described in Patent Document 1 is configured to include a stage including a workpiece receiver on which a substrate is placed. The workpiece receiver includes an air outlet for forming a gap with the substrate, and a gap sensor that is provided corresponding to each air outlet and measures the distance between the substrate and the workpiece receiver.

エア吹き出し口にエアが供給されることで、基板とワーク受けとの間にギャップが形成される。形成されたギャップはギャップセンサで測定され、測定結果を基に、レーザ加工焦点位置が所定の位置で一定になるように、エア吹き出し口から流出するエア流量が調整され、ギャップが調節される。エア流量の調整、ギャップの調節は、流量調整機構を備え、それぞれのエア吹き出し口にエアを供給するエアバルブを独立に制御して行われる。   By supplying air to the air outlet, a gap is formed between the substrate and the workpiece receiver. The formed gap is measured by a gap sensor, and based on the measurement result, the flow rate of air flowing out from the air outlet is adjusted so that the laser processing focal position becomes constant at a predetermined position, and the gap is adjusted. The adjustment of the air flow rate and the adjustment of the gap are performed by providing a flow rate adjustment mechanism and independently controlling the air valves that supply air to the respective air outlets.

特許文献１記載のレーザ加工装置においては、たとえば基板全面に対応する位置に、基板とワーク受けとの間のギャップを調節する機構であるエア吹き出し口が配置される。   In the laser processing apparatus described in Patent Document 1, for example, an air outlet that is a mechanism for adjusting a gap between the substrate and the workpiece receiver is disposed at a position corresponding to the entire surface of the substrate.

特開２００１−２５２７８４号公報JP 2001-252784 A

本発明の目的は、高品質の加工を実現することのできるレーザ加工装置を提供することである。   The objective of this invention is providing the laser processing apparatus which can implement | achieve high quality processing.

また、小型化可能なレーザ加工装置を提供することである。   Moreover, it is providing the laser processing apparatus which can be reduced in size.

更に、高品質の加工を実現することのできるレーザ加工方法を提供することである。   Furthermore, it is providing the laser processing method which can implement | achieve high quality processing.

本発明の一観点によれば、
被加工面が画定された加工対象物を、該被加工面に沿う方向に移動可能に保持する保持機構と、
前記保持機構に保持された加工対象物の被加工面の一部の領域にレーザビームを入射させるレーザ光学系と、
前記保持機構に保持された加工対象物を、被加工面に沿う方向に移動させる移動機構と、
前記保持機構に保持された加工対象物の、前記レーザ光学系からのレーザビームが入射する領域を支持し、支持されている領域を、被加工面に対して高さ方向に変位させる高さ調整機構と
を有し、前記高さ調整機構は、エアベアリングと、前記エアベアリングを前記保持機構に対して高さ方向に変位させる昇降機構とを含むとともに、該高さ調整機構に対し、被加工面に沿う方向に関して前記加工対象物が相対的に移動可能に該加工対象物の一部を支持するレーザ加工装置が提供される。
According to one aspect of the present invention,
A holding mechanism for holding a workpiece to be machined in a movable manner in a direction along the workpiece surface;
A laser optical system that causes a laser beam to be incident on a partial region of a surface to be processed of the object to be processed held by the holding mechanism;
A moving mechanism for moving the object to be processed held by the holding mechanism in a direction along the surface to be processed;
A height adjustment for supporting a region where a laser beam from the laser optical system is incident on the workpiece held by the holding mechanism and displacing the supported region in a height direction with respect to the processing surface. And the height adjusting mechanism includes an air bearing and an elevating mechanism that displaces the air bearing in the height direction with respect to the holding mechanism. There is provided a laser processing apparatus for supporting a part of the processing object such that the processing object can move relatively in a direction along the surface.

また、本発明の他の観点によれば、
被加工面が画定された可撓制を有する加工対象物を、該被加工面に沿う方向に移動可能に保持する保持機構と、前記保持機構に保持された加工対象物の一部を支持するエアベアリングとの上に、前記加工対象物を保持する工程と、
（ａ）前記エアベアリングを前記保持機構に対して高さ方向に変位させて、前記加工対象物を撓ませることによって、レーザビームの経路内の部分を、該被加工面に関して高さ方向に変位させる工程と、
（ｂ）前記レーザビームの経路内の部分を変位させた後、変位した部分にレーザビームを入射させる工程と
を有するレーザ加工方法が提供される。 According to another aspect of the present invention,
A holding mechanism that holds a workpiece having a flexible surface with a workpiece surface defined so as to be movable in a direction along the workpiece surface, and a part of the workpiece that is held by the holding mechanism are supported. Holding the workpiece on the air bearing;
(A) By displacing the air bearing in the height direction with respect to the holding mechanism and bending the workpiece, a portion in the laser beam path is displaced in the height direction with respect to the workpiece surface. A process of
(B) A step of displacing a portion in the path of the laser beam and then causing the laser beam to enter the displaced portion is provided.

本発明によれば、高品質の加工を実現するレーザ加工装置を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, the laser processing apparatus which implement | achieves a high quality process can be provided.

また、小型化されたレーザ加工装置を提供することができる。   In addition, a miniaturized laser processing apparatus can be provided.

更に、高品質の加工を実現するレーザ加工方法を提供することができる。   Furthermore, a laser processing method that realizes high-quality processing can be provided.

図１は、実施例によるレーザ加工装置を示す概略図である。   FIG. 1 is a schematic diagram illustrating a laser processing apparatus according to an embodiment.

レーザ光源３０からレーザビームＬＢが出射する。レーザビームＬＢは、折り返しミラー３１ａ、３１ｂで反射され、ホモジナイザ３２に入射する。ホモジナイザ３２はフォーカスレンズ３２ａを含んで構成される。   A laser beam LB is emitted from the laser light source 30. The laser beam LB is reflected by the folding mirrors 31 a and 31 b and enters the homogenizer 32. The homogenizer 32 includes a focus lens 32a.

ホモジナイザ３２はホモジナイズ面において、レーザビームＬＢのビーム断面を長尺形状に整形するとともに、ビーム断面内の長尺方向の光強度分布を均一化する。   The homogenizer 32 shapes the beam cross section of the laser beam LB into a long shape on the homogenization surface, and uniformizes the light intensity distribution in the long direction within the beam cross section.

基板浮上パッド４０上方に、可撓性を有する基板５０が保持されている。基板５０は、ガラス基板と、その上に形成されたアモルファスシリコン膜とを有する。基板５０は、たとえばその表面（アモルファスシリコン膜表面）が、ホモジナイザ３２のホモジナイズ面の高さと等しくなる位置に保持される。アモルファスシリコン膜上には、光強度分布が均一化された長尺形状のレーザビームＬＢが照射され、アモルファスシリコン膜の結晶化（レーザアニール）が行われる。   A flexible substrate 50 is held above the substrate floating pad 40. The substrate 50 has a glass substrate and an amorphous silicon film formed thereon. The substrate 50 is held, for example, at a position where the surface (amorphous silicon film surface) is equal to the height of the homogenized surface of the homogenizer 32. The amorphous silicon film is irradiated with a long laser beam LB having a uniform light intensity distribution, and the amorphous silicon film is crystallized (laser annealing).

図２は、基板浮上パッドの近傍を示す概略図である。説明の便宜のために、本図右方向をＸ軸方向、上方向をＺ軸方向とするＸＺ直交座標系を画定する。   FIG. 2 is a schematic view showing the vicinity of the substrate floating pad. For convenience of explanation, an XZ orthogonal coordinate system is defined in which the right direction in the figure is the X-axis direction and the upward direction is the Z-axis direction.

基板浮上パッド４０ａ〜４０ｃは、その上面からエア６０を吹き出し、基板５０をエア浮上させる（エアベアリング）。たとえば基板浮上パッド４０ａ〜４０ｃと基板５０との間のギャップ量が一定となるように、エア６０が吹き出される。基板５０は、その垂線の方向（高さ方向）とＺ軸方向とが平行となるように保持される。基板５０と基板浮上パッド４０ａ〜４０ｃの上面とが非接触であるため、基板５０に傷がつくことが防止される。   The substrate floating pads 40a to 40c blow out air 60 from the upper surface thereof, and cause the substrate 50 to air float (air bearing). For example, the air 60 is blown out so that the gap amount between the substrate floating pads 40a to 40c and the substrate 50 is constant. The substrate 50 is held so that the perpendicular direction (height direction) and the Z-axis direction are parallel to each other. Since the substrate 50 and the upper surfaces of the substrate floating pads 40a to 40c are not in contact with each other, the substrate 50 is prevented from being damaged.

ホモジナイザを出射したレーザビームＬＢは、基板浮上パッド４０ｂ上方に保持されている基板５０の表面に入射する。レーザビームＬＢの光軸方向は、たとえばＺ軸方向と平行である。   The laser beam LB emitted from the homogenizer is incident on the surface of the substrate 50 held above the substrate floating pad 40b. The optical axis direction of the laser beam LB is, for example, parallel to the Z-axis direction.

高さ検出器４１は、基板浮上パッド４０ｂ近傍に配置され、基板浮上パッド４０ｂ上方における、レーザビームＬＢが入射する領域の基板５０表面のＺ軸方向に沿う位置（高さ）を検出する。   The height detector 41 is disposed in the vicinity of the substrate floating pad 40b, and detects the position (height) along the Z-axis direction of the surface of the substrate 50 in the region where the laser beam LB is incident above the substrate floating pad 40b.

基板浮上パッド４０ｂには、高さ制御機構４２が設けられている。高さ制御機構４２は、基板浮上パッド４０ｂとともに、高さ制御機構４２及び基板浮上パッド４０ｂに対し、基板５０表面に沿う方向に関して基板５０が相対的に移動可能に基板５０の一部（基板浮上パッド４０ｂの上方部分）を支持している。   A height control mechanism 42 is provided on the substrate floating pad 40b. The height control mechanism 42, together with the substrate floating pad 40 b, is a part of the substrate 50 (substrate floating) so that the substrate 50 can move relative to the height control mechanism 42 and the substrate floating pad 40 b in the direction along the surface of the substrate 50. The upper portion of the pad 40b is supported.

高さ制御機構４２は、高さ検出器４１によって検出された基板５０表面の高さに基づいて、基板浮上パッド４０ｂをＺ軸方向に沿って移動させる。基板浮上パッド４０ｂの移動によって、レーザビームＬＢが入射する位置の基板５０がＺ軸方向に沿って移動する。高さ制御機構４２は、レーザビームＬＢが入射する位置の基板５０の高さがホモジナイザのホモジナイズ面の高さと一致するように、基板浮上パッド４０ｂを介して基板５０を昇降させる。   The height control mechanism 42 moves the substrate floating pad 40b along the Z-axis direction based on the height of the surface of the substrate 50 detected by the height detector 41. By the movement of the substrate floating pad 40b, the substrate 50 at the position where the laser beam LB is incident moves along the Z-axis direction. The height control mechanism 42 moves the substrate 50 up and down via the substrate floating pad 40b so that the height of the substrate 50 at the position where the laser beam LB enters coincides with the height of the homogenization surface of the homogenizer.

実施例によるレーザ加工装置を用いると、基板５０のうねりや厚さのばらつきにかかわらず、レーザビームＬＢの基板５０への入射高さをホモジナイズ面の高さと一致させることができるため、高品質の加工を実現することができる。また、基板５０の一部のみを上下させるため、基板５０表面とホモジナイズ面との位置合わせを、高速にかつ高精度に行うことができる。更に、基板５０の剛性は、レーザビームＬＢの照射位置でのみ保たれていればよいので、レーザ加工装置を小型化することができる。   When the laser processing apparatus according to the embodiment is used, the incident height of the laser beam LB on the substrate 50 can be made to coincide with the height of the homogenized surface regardless of the undulation or thickness variation of the substrate 50. Processing can be realized. Further, since only a part of the substrate 50 is moved up and down, the alignment of the surface of the substrate 50 and the homogenized surface can be performed at high speed and with high accuracy. Furthermore, since the rigidity of the substrate 50 only needs to be maintained at the irradiation position of the laser beam LB, the laser processing apparatus can be reduced in size.

図３は、レーザビームＬＢの光軸に平行な方向（Ｚ軸方向）から見たレーザ加工装置の概略的な平面図である。図２に示したＸ軸方向、Ｚ軸方向とそれぞれ直交するＹ軸方向を、本図上向きに画定する。   FIG. 3 is a schematic plan view of the laser processing apparatus viewed from a direction parallel to the optical axis of the laser beam LB (Z-axis direction). The Y-axis direction perpendicular to the X-axis direction and the Z-axis direction shown in FIG. 2 is defined upward in the figure.

図２においては、基板浮上パッド４０ａ〜４０ｃのみを示したが、実施例によるレーザ加工装置は、その他にも基板浮上パッド４０ｄ〜４０ｆを含む多数の基板浮上パッドを有する。また、本図には、レーザビームＬＢの基板５０への入射位置をビーム入射位置５５として、斜線を付して示した。   Although only the substrate floating pads 40a to 40c are shown in FIG. 2, the laser processing apparatus according to the embodiment has a number of substrate floating pads including the substrate floating pads 40d to 40f. Further, in this drawing, the incident position of the laser beam LB on the substrate 50 is shown as a beam incident position 55 with hatching.

実施例によるレーザ加工装置には、基板浮上パッド４０ｅにも高さ制御機構が設けられている。また、基板浮上パッド４０ｅの近傍には、基板浮上パッド４０ｅ上方のビーム入射位置５５における基板５０表面の高さを検出する高さ検出器が配置されている。なお、本図においては、基板５０表面の高さを、基板５０の下側から検出しているが、基板５０の上側から検出してもよい。   In the laser processing apparatus according to the embodiment, the substrate floating pad 40e is also provided with a height control mechanism. In addition, a height detector that detects the height of the surface of the substrate 50 at the beam incident position 55 above the substrate floating pad 40e is disposed in the vicinity of the substrate floating pad 40e. In this figure, the height of the surface of the substrate 50 is detected from the lower side of the substrate 50, but may be detected from the upper side of the substrate 50.

基板浮上パッド４０ｅに設けられた高さ制御機構は、高さ検出器によって検出された基板５０表面の高さに基づき、基板浮上パッド４０ｅをＺ軸方向に沿って移動させることによって、レーザビームＬＢが入射する位置（基板浮上パッド４０ｅ上方のビーム入射位置５５）の基板５０の高さを、ホモジナイザのホモジナイズ面の高さと一致させる。   The height control mechanism provided on the substrate floating pad 40e moves the substrate floating pad 40e along the Z-axis direction based on the height of the surface of the substrate 50 detected by the height detector. Is made to coincide with the height of the homogenization surface of the homogenizer (the beam incident position 55 above the substrate floating pad 40e).

実施例においては、高さ制御機構による基板浮上パッド４０ｂと４０ｅの駆動は、連動させて同一態様で行う。レーザ加工の種類や形態によっては、両者の駆動を、独立に、別態様で行ってもよい。   In the embodiment, the driving of the substrate floating pads 40b and 40e by the height control mechanism is performed in the same manner in conjunction with each other. Depending on the type and form of laser processing, both may be driven independently in different modes.

本図に示すように、実施例によるレーザ加工装置は基板搬送手段４５を備える。基板搬送手段４５は、ガイド４３ａ、４３ｂ、及び、基板保持器４４ａ、４４ｂを含んで構成される。   As shown in the figure, the laser processing apparatus according to the embodiment includes a substrate transfer means 45. The substrate transfer means 45 includes guides 43a and 43b and substrate holders 44a and 44b.

ガイド４３ａ、４３ｂは、相互に平行にＸ軸方向に沿って延在している。基板保持器４４ａ、４４ｂは、それぞれガイド４３ａ、４３ｂに、Ｘ軸方向と平行な方向に移動可能に支持されている。基板保持器４４ａ、４４ｂは、基板５０の両側端部をクランプし、クランプした基板５０を、ガイド４３ａ、４３ｂに沿ってＸ軸方向と平行な方向に移動させることができる。   The guides 43a and 43b extend in parallel to each other along the X-axis direction. The substrate holders 44a and 44b are supported by the guides 43a and 43b, respectively, so as to be movable in a direction parallel to the X-axis direction. The substrate holders 44a and 44b can clamp both end portions of the substrate 50 and move the clamped substrate 50 along the guides 43a and 43b in a direction parallel to the X-axis direction.

実施例によるレーザ加工装置を用いたレーザアニールは、たとえば以下のように行う。   Laser annealing using the laser processing apparatus according to the embodiment is performed as follows, for example.

まず、ビーム入射位置５５における基板５０のＺ軸方向に沿う高さを検出する。次に、検出された高さに基づいて、ビーム入射位置５５における基板５０を、高さ制御機構により基板浮上パッドを上下させ、撓ませることによって、Ｚ軸方向に沿って移動する。ビーム入射位置５５における基板５０表面（アモルファスシリコン膜）の高さとホモジナイズ面の高さとが一致するように高さ制御機構を制御する。そしてビーム入射位置５５における基板５０にＺ軸方向からレーザビームを入射させ、入射位置のアモルファスシリコン膜を結晶化させる。   First, the height along the Z-axis direction of the substrate 50 at the beam incident position 55 is detected. Next, based on the detected height, the substrate 50 at the beam incident position 55 is moved along the Z-axis direction by bending the substrate floating pad up and down by the height control mechanism. The height control mechanism is controlled so that the height of the surface of the substrate 50 (amorphous silicon film) at the beam incident position 55 matches the height of the homogenized surface. Then, a laser beam is incident on the substrate 50 at the beam incident position 55 from the Z-axis direction, and the amorphous silicon film at the incident position is crystallized.

基板搬送手段４５を駆動して、基板５０をＸ軸負方向に移動させる。移動させた後の基板５０のビーム入射位置５５におけるＺ軸方向に沿う高さを検出し、上述のプロセスと同様に、ビーム入射位置５５における基板５０を、その表面高さとホモジナイズ面の高さとが一致するように移動させた後、レーザビームを照射して、アモルファスシリコン膜を結晶化させる。   The substrate transport means 45 is driven to move the substrate 50 in the negative X-axis direction. After the movement, the height of the substrate 50 along the Z-axis direction at the beam incident position 55 is detected, and the surface height of the substrate 50 at the beam incident position 55 and the height of the homogenized surface are determined in the same manner as described above. After moving so as to coincide with each other, a laser beam is irradiated to crystallize the amorphous silicon film.

基板搬送手段４５によって基板５０を移動させることで、基板５０の、Ｘ軸方向と平行な方向に沿う所定領域のレーザアニールを高品質に行うことができる。   By moving the substrate 50 by the substrate transfer means 45, laser annealing of a predetermined region along the direction parallel to the X-axis direction of the substrate 50 can be performed with high quality.

基板搬送手段４５はエア浮上させた基板５０を移動させる。したがって、基板５０を移動させるために基板搬送手段４５を駆動する駆動部にかかる負荷は小さい。このため、基板搬送手段４５の駆動部を小型化することができる。   The substrate transfer means 45 moves the substrate 50 that has been air levitation. Therefore, the load applied to the drive unit that drives the substrate transport means 45 to move the substrate 50 is small. For this reason, the drive part of the board | substrate conveyance means 45 can be reduced in size.

図４に、基板搬送手段の変形例を示す。   FIG. 4 shows a modification of the substrate transfer means.

図３に示した基板搬送手段４５は、基板５０を一次元方向（Ｘ軸方向と平行な方向）に移動させたが、本図に示す基板搬送手段は、基板５０を二次元方向（Ｘ軸方向及びＹ軸方向に平行な方向）に移動させることができる。   3 moves the substrate 50 in a one-dimensional direction (direction parallel to the X-axis direction). However, the substrate transfer means shown in FIG. 3 moves the substrate 50 in a two-dimensional direction (X-axis direction). Direction and a direction parallel to the Y-axis direction).

変形例による基板搬送手段は、Ｘ軸方向基板搬送手段７２、及び、Ｙ軸方向基板搬送手段７５を含んで構成される。   The substrate transfer unit according to the modification includes an X-axis direction substrate transfer unit 72 and a Y-axis direction substrate transfer unit 75.

Ｘ軸方向基板搬送手段７２は、ガイド７０ａ、７０ｂ、及び、基板保持器７１ａ、７１ｂを含む。ガイド７０ａ、７０ｂは、相互に平行にＸ軸方向に沿って延在している。基板保持器７１ａ、７１ｂは、それぞれガイド７０ａ、７０ｂに、Ｘ軸方向と平行な方向に移動可能に支持されている。基板保持器７１ａ、７１ｂは、基板５０の裏面を吸着し、吸着した基板５０を、ガイド７０ａ、７０ｂに沿ってＸ軸方向と平行な方向に移動させることができる。   The X-axis direction substrate transfer means 72 includes guides 70a and 70b and substrate holders 71a and 71b. The guides 70a and 70b extend along the X-axis direction in parallel with each other. The substrate holders 71a and 71b are supported by the guides 70a and 70b, respectively, so as to be movable in a direction parallel to the X-axis direction. The substrate holders 71a and 71b can adsorb the back surface of the substrate 50 and move the adsorbed substrate 50 along the guides 70a and 70b in a direction parallel to the X-axis direction.

Ｙ軸方向基板搬送手段７５は、ガイド７３ａ、７３ｂ、及び、基板保持器７４ａ、７４ｂを含む。ガイド７３ａ、７３ｂは、相互に平行にＹ軸方向に沿って延在している。基板保持器７４ａ、７４ｂは、それぞれガイド７３ａ、７３ｂに、Ｙ軸方向と平行な方向に移動可能に支持されている。基板保持器７４ａ、７４ｂは、基板５０の裏面を吸着し、吸着した基板５０を、ガイド７３ａ、７３ｂに沿ってＹ軸方向と平行な方向に移動させることができる。基板保持器７４ａ、７４ｂによって吸着された基板５０を、Ｙ軸方向と平行な方向に沿って移動させる際には、Ｘ軸方向基板搬送手段７２の基板保持器７１ａ、７１ｂによる吸着は解除される。   The Y-axis direction substrate transport means 75 includes guides 73a and 73b and substrate holders 74a and 74b. The guides 73a and 73b extend along the Y-axis direction in parallel with each other. The substrate holders 74a and 74b are supported by the guides 73a and 73b, respectively, so as to be movable in a direction parallel to the Y-axis direction. The substrate holders 74a and 74b can adsorb the back surface of the substrate 50 and move the adsorbed substrate 50 along the guides 73a and 73b in a direction parallel to the Y-axis direction. When the substrate 50 adsorbed by the substrate holders 74a and 74b is moved along a direction parallel to the Y-axis direction, the adsorption by the substrate holders 71a and 71b of the X-axis direction substrate transfer means 72 is released. .

Ｘ軸方向基板搬送手段７２、及び、Ｙ軸方向基板搬送手段７５によって基板５０を移動させることで、基板５０の任意の位置のレーザアニールを高品質に行うことが可能となる。   By moving the substrate 50 by the X-axis direction substrate transfer means 72 and the Y-axis direction substrate transfer means 75, laser annealing at an arbitrary position of the substrate 50 can be performed with high quality.

以上、実施例に沿って本発明を説明したが、本発明はこれらに限定されるものではない。種々の変更、改良、組み合わせ等が可能なことは当業者には自明であろう。   As mentioned above, although this invention was demonstrated along the Example, this invention is not limited to these. It will be apparent to those skilled in the art that various modifications, improvements, combinations, and the like can be made.

加工対象物の高さを制御して加工を行うレーザ加工一般に用いることができる。殊に、加工基板の高さを高精度に制御する必要があるレーザアニールに好適に用いることができる。   It can be generally used for laser processing in which processing is performed by controlling the height of the processing object. In particular, it can be suitably used for laser annealing in which the height of the processed substrate needs to be controlled with high accuracy.

実施例によるレーザ加工装置を示す概略図である。It is the schematic which shows the laser processing apparatus by an Example. 基板浮上パッドの近傍を示す概略図である。It is the schematic which shows the vicinity of a board | substrate floating pad. レーザビームの光軸に平行な方向（Ｚ軸方向）から見たレーザ加工装置の概略的な平面図である。It is a schematic plan view of the laser processing apparatus seen from the direction parallel to the optical axis of a laser beam (Z-axis direction). 基板搬送手段の変形例を示す図である。It is a figure which shows the modification of a board | substrate conveyance means.

符号の説明Explanation of symbols

３０ レーザ光源
３１ａ、３１ｂ 折り返しミラー
３２ ホモジナイザ
３２ａ フォーカスレンズ
４０、４０ａ〜４０ｆ 基板浮上パッド
４１ 高さ検出器
４２ 高さ制御機構
４３ａ、４３ｂ ガイド
４４ａ、４４ｂ 基板保持器
４５ 基板搬送手段
５０ 基板
５５ ビーム入射位置
６０ エア
７０ａ、７０ｂ、７３ａ、７３ｂ ガイド
７１ａ、７１ｂ、７４ａ、７４ｂ 基板保持器
７２ Ｘ軸方向基板搬送手段
７５ Ｙ軸方向基板搬送手段
ＬＢ レーザビーム 30 Laser light sources 31a, 31b Folding mirror 32 Homogenizer 32a Focus lens 40, 40a-40f Substrate floating pad 41 Height detector 42 Height control mechanism 43a, 43b Guide 44a, 44b Substrate holder 45 Substrate transport means 50 Substrate 55 Beam incidence Position 60 Air 70a, 70b, 73a, 73b Guide 71a, 71b, 74a, 74b Substrate holder 72 X-axis direction substrate transfer means 75 Y-axis direction substrate transfer means LB Laser beam

Claims (5)

被加工面が画定された加工対象物を、該被加工面に沿う方向に移動可能に保持する保持機構と、
前記保持機構に保持された加工対象物の被加工面の一部の領域にレーザビームを入射させるレーザ光学系と、
前記保持機構に保持された加工対象物を、被加工面に沿う方向に移動させる移動機構と、
前記保持機構に保持された加工対象物の、前記レーザ光学系からのレーザビームが入射する領域を支持し、支持されている領域を、被加工面に対して高さ方向に変位させる高さ調整機構と
を有し、前記高さ調整機構は、エアベアリングと、前記エアベアリングを前記保持機構に対して高さ方向に変位させる昇降機構とを含むとともに、該高さ調整機構に対し、被加工面に沿う方向に関して前記加工対象物が相対的に移動可能に該加工対象物の一部を支持するレーザ加工装置。 A holding mechanism for holding a workpiece to be machined in a movable manner in a direction along the workpiece surface;
A laser optical system that causes a laser beam to be incident on a partial region of a surface to be processed of the object to be processed held by the holding mechanism;
A moving mechanism for moving the object to be processed held by the holding mechanism in a direction along the surface to be processed;
A height adjustment for supporting a region where a laser beam from the laser optical system is incident on the workpiece held by the holding mechanism and displacing the supported region in a height direction with respect to the processing surface. And the height adjusting mechanism includes an air bearing and an elevating mechanism that displaces the air bearing in the height direction with respect to the holding mechanism. A laser processing apparatus that supports a part of the processing object so that the processing object can move relatively in a direction along the surface. 更に、加工対象物の被加工面の高さ方向に関して、前記レーザ光学系からのレーザビームが入射する領域の加工対象物の位置を検出する高さ検出器を含む請求項１に記載のレーザ加工装置。   The laser processing according to claim 1, further comprising a height detector that detects a position of the processing object in a region where a laser beam from the laser optical system is incident with respect to a height direction of a processing surface of the processing object. apparatus. 前記保持機構は、加工対象物を気体で浮上させて保持する請求項１または２に記載のレーザ加工装置。   The laser processing apparatus according to claim 1, wherein the holding mechanism floats and holds the object to be processed with a gas. 被加工面が画定された可撓制を有する加工対象物を、該被加工面に沿う方向に移動可能に保持する保持機構と、前記保持機構に保持された加工対象物の一部を支持するエアベアリングとの上に、前記加工対象物を保持する工程と、
（ａ）前記エアベアリングを前記保持機構に対して高さ方向に変位させて、前記加工対象物を撓ませることによって、レーザビームの経路内の部分を、該被加工面に関して高さ方向に変位させる工程と、
（ｂ）前記レーザビームの経路内の部分を変位させた後、変位した部分にレーザビーム
を入射させる工程と
を有するレーザ加工方法。 A holding mechanism that holds a workpiece having a flexible surface with a workpiece surface defined so as to be movable in a direction along the workpiece surface, and a part of the workpiece that is held by the holding mechanism are supported. Holding the workpiece on the air bearing;
(A) By displacing the air bearing in the height direction with respect to the holding mechanism and bending the workpiece, a portion in the laser beam path is displaced in the height direction with respect to the workpiece surface. A process of
(B) a step of displacing a portion in the path of the laser beam and then causing the laser beam to enter the displaced portion. さらに、前記加工対象物を、レーザビームの経路に対して、被加工面に沿って移動させながら前記工程（ａ）及び（ｂ）を交互に繰り返す工程を含む請求項４に記載のレーザ加工方法。
The laser processing method according to claim 4 , further comprising a step of alternately repeating the steps (a) and (b) while moving the object to be processed along the surface to be processed with respect to a laser beam path. .
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