JP5049521B2 - 電気的に隔離されたピクセルを備えた検出器及び、その製造方法 - Google Patents
電気的に隔離されたピクセルを備えた検出器及び、その製造方法 Download PDFInfo
- Publication number
- JP5049521B2 JP5049521B2 JP2006172057A JP2006172057A JP5049521B2 JP 5049521 B2 JP5049521 B2 JP 5049521B2 JP 2006172057 A JP2006172057 A JP 2006172057A JP 2006172057 A JP2006172057 A JP 2006172057A JP 5049521 B2 JP5049521 B2 JP 5049521B2
- Authority
- JP
- Japan
- Prior art keywords
- detector
- layer
- photodiode
- array
- photodiodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20183—Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20182—Modular detectors, e.g. tiled scintillators or tiled photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
Description
12 放射線源
16 目標物
18 検出器
20 検出器取得サーキットリ
22 画像処理サーキットリ
24 操作者ワークステーション
26 画像表示ワークステーション
28 システム制御器
30 運動サブシステム
32 マルチ・スライスCTシステムの例(図2)
34 検出器アセンブリ
36 X線源
40 対象
41 検出器モジュールの例(図3)
42 シンチレータ・アレイ
44 光検出器アレイ
48 光検出器層
50 基材層
52 P+層
54 高抵抗半導体の真性層
56 N+拡散層
60 真性半導体層
62 図5のN+拡散層
64 図6のN+拡散層
66 真性半導体層
70 P+層
72 個別のフォトダイオード・ピクセル
74 2個のフォトダイオード・ピクセルを分離する溝
76 真性半導体層
78 個別のフォトダイオード・ピクセル
80 P+層
81 図8において2個のフォトダイオード・ピクセルを分離する溝
82 図7に示す検出器アレイの実施形態のもう一つの例
84 P+層
88 真性半導体層
90 基材
92 バイア
94 図4に示す検出器アレイの実施形態のもう一つの例
Claims (7)
- 光検出器アレイ(44)であって、
単層構造の真性半導体材料(60)の層と、
各々がフォトダイオードを形成する複数のP+層(52)であって、前記真性半導体材料(60)の層の前面の上に形成された複数のP+層(52)と、
前記複数のP+層(52)の各々を電気的に隔離する、N+拡散領域(62)と、
を備え、
前記N+拡散領域(62)が、前記真性半導体材料(60)の層の前面及び背面に形成され、対向する前記N+拡散領域が前記光検出器アレイ(44)の内部で互いに接触する、
光検出器アレイ(44)。 - 前記複数のP+層(52)の各々を電気的に隔離する溝構造(81)を含む、請求項1に記載の光検出器アレイ(44)。
- 前記溝構造の各々の溝は不動態化されている、請求項2に記載の光検出器アレイ(44)。
- 前記光検出器アレイの背面への電気的接触を設けるように構成されている少なくとも1個のバイア(92)をさらに含んでおり、イメージング・システム(10)に用いるように構成されている請求項1乃至3のいずれかに記載の光検出器アレイ(44)。
- 請求項1乃至4のいずれかに記載の光検出器アレイ(44)である前面発光型光検出器アレイ(44)
を備えた検出器(18)。 - 光検出器アレイ(44)を備える検出器を製造する方法であって、
単層構造の真性半導体材料(60)の層を設けるステップと、
前記真性半導体材料(60)の層の前面の上に各々がフォトダイオードを形成する複数のP+層(52)を形成するステップと、
前記複数のP+層(52)の各々を電気的に隔離する、N+拡散領域(62)を、前記真性半導体材料(60)の層の前面及び背面に形成するステップと、
を備え、
対向する前記N+拡散領域(62)が前記光検出器アレイ(44)の内部で互いに接触する、
検出器を製造する方法。 - 溝構造(81)により前記複数のP+層(52)の各々を分離するステップと、
を備えた請求項6に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/171,170 | 2005-06-29 | ||
US11/171,170 US20060289777A1 (en) | 2005-06-29 | 2005-06-29 | Detector with electrically isolated pixels |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007013142A JP2007013142A (ja) | 2007-01-18 |
JP5049521B2 true JP5049521B2 (ja) | 2012-10-17 |
Family
ID=37566235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006172057A Expired - Fee Related JP5049521B2 (ja) | 2005-06-29 | 2006-06-22 | 電気的に隔離されたピクセルを備えた検出器及び、その製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20060289777A1 (ja) |
JP (1) | JP5049521B2 (ja) |
CN (1) | CN1892250B (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070272872A1 (en) * | 2006-05-24 | 2007-11-29 | Bruker Axs, Inc. | X-ray detector with photodetector embedded in scintillator |
JP5422889B2 (ja) * | 2007-12-27 | 2014-02-19 | 株式会社ニコン | 固体撮像素子及びこれを用いた撮像装置 |
US20090314947A1 (en) * | 2008-05-30 | 2009-12-24 | Array Optronix, Inc. | Radiation Detector with Isolated Pixels Photosensitive Array for CT and Other Imaging Applications |
US8552466B2 (en) * | 2009-05-04 | 2013-10-08 | General Electric Company | Low capacitance photodiode element and computed tomography detector |
US8610079B2 (en) * | 2009-12-28 | 2013-12-17 | General Electric Company | Robust radiation detector and method of forming the same |
US8466420B2 (en) | 2010-06-04 | 2013-06-18 | General Electric Company | Charge loss correction |
DE102011004936A1 (de) * | 2011-03-02 | 2012-09-06 | Siemens Aktiengesellschaft | Röntgendetektor und medizinisches Röntgengerät |
CN106461796B (zh) * | 2014-04-17 | 2020-02-07 | 皇家飞利浦有限公司 | 具有可具有高纵横比的光敏元件的辐射探测器 |
SG11201707508PA (en) | 2015-04-07 | 2017-10-30 | Shenzhen Xpectvision Tech Co Ltd | Semiconductor x-ray detector |
JP6385591B2 (ja) | 2015-04-07 | 2018-09-05 | シェンゼン・エクスペクトビジョン・テクノロジー・カンパニー・リミテッド | 半導体x線検出器 |
EP3281041B1 (en) | 2015-04-07 | 2020-06-10 | Shenzhen Xpectvision Technology Co., Ltd. | Methods of making semiconductor x-ray detector |
US10539691B2 (en) | 2015-06-10 | 2020-01-21 | Shenzhen Xpectvision Technology Co., Ltd. | Detector for X-ray fluorescence |
US10056425B2 (en) | 2015-07-09 | 2018-08-21 | Shenzhen Xpectvision Technology Co., Ltd. | Methods of making semiconductor X-ray detector |
US10705031B2 (en) | 2015-08-27 | 2020-07-07 | Shenzhen Xpectvision Technology Co., Ltd. | X-ray imaging with a detector capable of resolving photon energy |
CN107923987B (zh) | 2015-09-08 | 2020-05-15 | 深圳帧观德芯科技有限公司 | 用于制作x射线检测器的方法 |
EP3362819A4 (en) | 2015-10-14 | 2019-06-05 | Shenzhen Xpectvision Technology Co., Ltd. | X-RAY DETECTORS TO LIMIT DIFFUSION OF CHARGE CARRIER |
WO2017085118A1 (en) * | 2015-11-19 | 2017-05-26 | Koninklijke Philips N.V. | Method of pixel volume confinement |
CN106847958B (zh) * | 2016-12-07 | 2018-09-11 | 同方威视技术股份有限公司 | 光电二极管器件及光电二极管探测器 |
CN106784071B (zh) * | 2016-12-07 | 2018-09-28 | 同方威视技术股份有限公司 | 光电二极管器件、光电二极管探测器及其制造方法 |
CN110914715B (zh) | 2017-07-26 | 2023-09-22 | 深圳帧观德芯科技有限公司 | 辐射检测器及其制造方法 |
WO2020010591A1 (en) | 2018-07-12 | 2020-01-16 | Shenzhen Xpectvision Technology Co., Ltd. | A radiation detector |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4227942A (en) * | 1979-04-23 | 1980-10-14 | General Electric Company | Photovoltaic semiconductor devices and methods of making same |
JPS6074879A (ja) * | 1983-09-30 | 1985-04-27 | Olympus Optical Co Ltd | 固体撮像装置 |
US4626613A (en) * | 1983-12-23 | 1986-12-02 | Unisearch Limited | Laser grooved solar cell |
JPS61139061A (ja) * | 1984-12-11 | 1986-06-26 | Hamamatsu Photonics Kk | 半導体光検出装置 |
JPS61141175A (ja) * | 1984-12-14 | 1986-06-28 | Hamamatsu Photonics Kk | 半導体光検出装置 |
US4984358A (en) * | 1989-03-10 | 1991-01-15 | Microelectronics And Computer Technology Corporation | Method of assembling stacks of integrated circuit dies |
US5468652A (en) * | 1993-07-14 | 1995-11-21 | Sandia Corporation | Method of making a back contacted solar cell |
US5670817A (en) * | 1995-03-03 | 1997-09-23 | Santa Barbara Research Center | Monolithic-hybrid radiation detector/readout |
US6025599A (en) * | 1997-12-09 | 2000-02-15 | Direct Radiography Corp. | Image capture element |
US6133615A (en) * | 1998-04-13 | 2000-10-17 | Wisconsin Alumni Research Foundation | Photodiode arrays having minimized cross-talk between diodes |
US6658082B2 (en) * | 2000-08-14 | 2003-12-02 | Kabushiki Kaisha Toshiba | Radiation detector, radiation detecting system and X-ray CT apparatus |
US6426991B1 (en) * | 2000-11-16 | 2002-07-30 | Koninklijke Philips Electronics N.V. | Back-illuminated photodiodes for computed tomography detectors |
US6510195B1 (en) * | 2001-07-18 | 2003-01-21 | Koninklijke Philips Electronics, N.V. | Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same |
JP2003264284A (ja) * | 2002-03-08 | 2003-09-19 | Sanyo Electric Co Ltd | 固体撮像素子及びその製造方法 |
GB2392307B8 (en) * | 2002-07-26 | 2006-09-20 | Detection Technology Oy | Semiconductor structure for imaging detectors |
US6836020B2 (en) * | 2003-01-22 | 2004-12-28 | The Board Of Trustees Of The Leland Stanford Junior University | Electrical through wafer interconnects |
US7242069B2 (en) * | 2003-05-05 | 2007-07-10 | Udt Sensors, Inc. | Thin wafer detectors with improved radiation damage and crosstalk characteristics |
US20040225220A1 (en) * | 2003-05-06 | 2004-11-11 | Rich Collin A. | Ultrasound system including a handheld probe |
US6762473B1 (en) * | 2003-06-25 | 2004-07-13 | Semicoa Semiconductors | Ultra thin back-illuminated photodiode array structures and fabrication methods |
US7199411B2 (en) * | 2003-09-03 | 2007-04-03 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and camera |
US20050096545A1 (en) * | 2003-10-30 | 2005-05-05 | Haider Bruno H. | Methods and apparatus for transducer probe |
US20060180885A1 (en) * | 2005-02-14 | 2006-08-17 | Omnivision Technologies, Inc. | Image sensor using deep trench isolation |
JP2006344644A (ja) * | 2005-06-07 | 2006-12-21 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびカメラならびに固体撮像装置の製造方法 |
-
2005
- 2005-06-29 US US11/171,170 patent/US20060289777A1/en not_active Abandoned
-
2006
- 2006-06-22 JP JP2006172057A patent/JP5049521B2/ja not_active Expired - Fee Related
- 2006-06-29 CN CN2006100996499A patent/CN1892250B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1892250A (zh) | 2007-01-10 |
JP2007013142A (ja) | 2007-01-18 |
US20060289777A1 (en) | 2006-12-28 |
CN1892250B (zh) | 2012-11-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5049521B2 (ja) | 電気的に隔離されたピクセルを備えた検出器及び、その製造方法 | |
US7956332B2 (en) | Multi-layer radiation detector assembly | |
EP2847619B1 (en) | Multi-layer horizontal computed tomography (ct) detector array with at least one thin photosensor array layer disposed between at least two scintillator array layers | |
US8405038B2 (en) | Systems and methods for providing a shared charge in pixelated image detectors | |
JP4683906B2 (ja) | 光マスク層を有するct検出器及びその製造方法 | |
EP3622705B1 (en) | Active pixel sensor computed tomography (ct) detector and method of readout | |
WO2010058309A2 (en) | Spectral imaging detector | |
US20100014631A1 (en) | Scintillator based x-ray sensitive integrated circuit element with depleted electron drift region | |
US7283608B2 (en) | System and method for X-ray imaging using X-ray intensity information | |
EP2126608B1 (en) | Radiation sensitive detector | |
US20140183607A1 (en) | Complementary Metal-Oxide-Semiconductor (CMOS) X-Ray Detector With A Repaired CMOS Pixel Array | |
JP2003232860A (ja) | 放射線検出器 | |
US11948285B2 (en) | Imaging systems with multiple radiation sources | |
US11348964B2 (en) | Pixel definition in a porous silicon quantum dot radiation detector | |
CN117795382A (zh) | 使用辐射探测器确定光子起源点 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090618 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20090619 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100610 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120126 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120131 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120321 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120410 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120612 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120710 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120723 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150727 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5049521 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |