JP5049428B2 - 半導体ウエハ上に低誘電率膜を形成する方法 - Google Patents
半導体ウエハ上に低誘電率膜を形成する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 36
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 35
- 230000008569 process Effects 0.000 description 31
- 238000001723 curing Methods 0.000 description 15
- 238000005229 chemical vapour deposition Methods 0.000 description 14
- 230000008901 benefit Effects 0.000 description 9
- 238000005137 deposition process Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 150000001282 organosilanes Chemical class 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000003848 UV Light-Curing Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 229910002808 Si–O–Si Inorganic materials 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000013036 cure process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000010952 in-situ formation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 150000004819 silanols Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Description
【産業上の利用分野】
本発明は、半導体加工の分野に関し、さらに詳しくは、低い熱予算で硬化工程を用いて低誘電率膜を作製することに関する。
【0002】
【従来の技術】
半導体の作製分野では、低誘電率膜(low k膜)が、総キャパシタンス・クロストーク(capacitance crosstalk)を低減するために、バックエンド(後部トランジスタ)モジュールで用いられる。一般に、低誘電率膜は、スピンオン工程または化学気相堆積法(CVD)工程を用いて、堆積または形成される。低誘電率膜の形成後、硬化工程が一般に実施されて、化学結合の形成を完成し、残留成分をガス抜き(outgas)し、膜内の誘電率を低減する。この硬化工程は通常、バッチ・モードを用いて炉内で実施されるか、またはシングル・ウエハ・モードを用いて、ホットプレート上で実施される。いずれの場合にも、従来の硬化工程は、長時間(約300℃を超える温度で約1時間を超える時間)、ウエハを昇温にさらすことがのぞましくない。個々の工程に割り当てられた熱予算の大部分を費消することに加え、従来の硬化工程は、製造者が追加の加工装置を取得する必要があるかもしれない時間のかかる製造段階を必要とする。そのため、UV露光を利用した低温で短時間の処理を利用して、低誘電率加熱硬化を実現し、膜の所要の誘電特性を実現することが望ましい。
【0003】
【実施例】
本発明は一般に、紫外線(UV)硬化工程を利用して低誘電率膜が形成される半導体作製工程を企図する。例えば、低誘電率膜は、集積回路の隣接する導電層(通常、金属層という)を互いに絶縁するために使用できる。最初に、誘電体膜が、従来の半導体ウエハの上に堆積される。本発明により形成されるlow k誘電体が、層間誘電体(ILD)として利用される実施例では、ウエハは、分離構造の形成,ウエル構造の形成,およびp型とn型トランジスタの形成を含む幾つかの作製工程を通して予め加工済みのものとすることができる。1つの実施例では、誘電体膜の堆積は、化学気相堆積法(CVD)を用いて実現される。別の実施例では、誘電体膜は、スピンオン工程によって堆積される。酸化物および他の誘電体材料を堆積するためのCVDツールは、大半の半導体製造施設に存在するので、本発明の誘電体膜を堆積するCVD実施例は、製造施設内の既存の装置を利用する面で利点を有する可能性がある。好適な実施例では、堆積された誘電体膜は、比較的低い誘電率を有する(低誘電率膜)。低誘電率膜は、カーボン・ドープ(carbon doped)酸化シリコン膜によって構成できる。例えば、1つの実施例では、低誘電率膜は、オルガノシラン・ガス、およびN2Oなどの核種を帯びる酸素を、半導体ウエハが配置されるCVDリアクタ・チャンバに送り込むことによって形成される。炭素ベースの酸化シリコンを形成するのに適するオルガノシランは、例えば、メチルシラン,ジメチルシラン,トリメチルシランおよびテトラメチルシランを含む。オルガノシランおよび核種を帯びる酸素のほかに、ヘリウムまたはアルゴンなどの不活性核種を、堆積段階の間に、リアクタ・チャンバに送り込んでもよい。
【0004】
低誘電率膜のCVD形成は、低温工程または高温工程を用いて、適切に実施できる。1つの実施例において、低温工程は、CVDリアクタ・チャンバ内でウエハ・チャック(wafer chuck)を、約3Torr(約399.97Pa)の圧力で、約10から25℃の範囲の温度に維持することによって実施される。低温堆積工程は、より長い堆積時間を必要とするかもしれないが、その結果生成される誘電体膜は、より低い誘電率を有する可能性がある。加えて、低温工程は、熱予算が限られる製造工程に適する。別の実施例では、高温堆積工程が、誘電体膜の堆積中、ウエハ・チャックを約350から400℃の範囲内の温度に維持することによって実施される。高温堆積工程は、比較的高い堆積速度の場合に望ましいかもしれない。
【0005】
オルガノシラン・ベースの堆積は、シリコンと非結合シラノールに付着されるメチル基とCHx基(x<3)を含むSi-O-Si網状結合に特徴づけられる誘電体膜を生成する。堆積された誘電体膜の誘電率は一般に、約3.4から4.0の範囲内にある。約3.0未満の誘電率を有する誘電体膜を実現するため、本発明の好適な実施例は、硬化工程を含む。硬化工程は、堆積された膜内に縮合反応を生じ、この膜内でシラノール分子が互いに反応してSi-O-Si結合とウエハを形成する。好適な実施例では、硬化工程は、水、およびアンモニアとSi−CHの断片とその他の残渣とを含む他の残留成分を排除して、SiOxCyHz組成を有する低誘電率膜を作製する。さらに加工する前に低誘電率膜の硬化を行なうことは、これらの残留成分が、堆積された層に、汚染またはその他により後に影響を与えるのを防ぐ上で利点を有する。
【0006】
本発明の1つの実施例において、堆積された誘電体膜の硬化は、電磁エネルギー(光エネルギー)によりウエハを照射することによって実現され、このエネルギーは、電磁スペクトルの紫外線(UV)部分の光エネルギー(波長が約400nm未満の光エネルギー)であることが望ましい。誘電体膜のUV照射は、膜を、水銀アーク・ランプなどのUVエネルギー源に露光することによって実現できる。1つの実施例では、選択されたUVエネルギー源により放射される総スペクトル輝度の少なくとも30%は、可視光の周波数よりも高い周波数を有する(約400nm未満の波長を有する)。
【0007】
本発明の好適な実施例によるUV硬化工程は、費消するウエハの熱予算をできるだけ少なくするため、約425℃を超えない温度にウエハを維持しながら実施される。このUV硬化は、約10分を超えない時間にわたり、ウエハを約200から250℃の範囲内の温度に維持しつつ実現されるのであれば格段に望ましく、1分を超えない時間であれば尚望ましい。(250℃を超えない)低温のUV硬化段階は、熱予算が限られる用途では望ましいかもしれないが、(425℃を超えない)より高温のUV工程は、より短時間でより低い誘電率を有する誘電体膜を製造することができる。UVエネルギー源自体は、ウエハの温度を著しく変化させないことが望ましい。すなわち、光エネルギーは、ウエハに対して著しい加熱効果を与えない。光エネルギーがウエハ加熱の主要メカニズムである急速な熱アニール型の照射とは対照的に、本明細書で考察される硬化工程は、1つまたは限られた数のUV照射源を用いて実施できる。ウエハが個別に硬化される実施例(シングル・ウエハ・モード)では、1個のUVエネルギー源で十分かもしれない。複数のウエハが同時に硬化される実施例では、複数のUV源が必要とされるかもしれないが、UV源の数は、各バッチで加工されるウエハの数に等しいか、これを下回ることが望ましい。
【0008】
本発明の1実施例は、低誘電率膜を形成するための現場工程を意図し、この工程では、ウエハは、誘電体の堆積と硬化工程の間、空気にさらされない(堆積段階と硬化段階が、1つのツールを用いて実施される)。この低誘電率膜の現場形成を実現するのに適したクラスタ・ツール(システム)100の実施例が、図1に示される。図示された実施例では、システム100は、複数のリアクタ・チャンバ(モジュール)102aから102e(全体またはまとめて、モジュール102という)と、化学気相堆積法の当業者が熟知するような、種々のモジュール102間のウエハの移動を制御するためのロボット・セクション(バッファ・チャンバ)104とを含む。バッファ・チャンバ104は、ウエハを空気にさらさずに、種々のモジュール102間でウエハを移送するのに適する。モジュール102のそれぞれは、ウエハを受け取るためのウエハ・チャックを含むことが望ましい。モジュール102のそれぞれは、酸化物堆積モジュール,UV硬化モジュール,または他の適切なモジュールとして構成できる。図示された実施例では、例えば、モジュール102aは、UVモジュール専用にあてられ、一方、モジュール102bは、CVD low k誘電体チャンバ専用にあてられる。残りのモジュール102c,102dおよび102eは、実装に依存して、堆積モジュールまたはUVモジュールとして実現できる。複数材料または集積誘電体構造を製造することが望ましい実施例では、例えば、モジュール102cを反射防止塗装(ARC)またはパッシベーション・モジュールとして構成し、モジュール102dをTEOS堆積モジュールとして、チャンバ102をUVモジュールとして構成するのが望ましいかもしれない。別の実施例では、システム100は、特定の堆積工程専用に充てることができる。この実施例では、例えば、モジュール102aと102eは、UV硬化モジュールとして使用でき、一方、モジュール102b,102cおよび102dは、low k誘電体の堆積専用に充てられる。
【0009】
このため、システム100は、チャンバ102bにウエハを移送することによって、lowk誘電体材料の堆積および硬化を実施するのに適しており、このチャンバでは、lowk堆積工程が実施され、その後、ウエハをモジュール102aに移送して、UV硬化工程を実施する。UV硬化工程を、堆積工程と同じ装置に統合することによって、本発明の実施例は、工程費用を低減する上で利点を有する一方、工程の処理量を改善し、工程の欠陥を低減する統合された製造工程を意図する。システム100が、参照番号106によって明示される冷却ゾーンを含む実施例では、UVエネルギー源を有する冷却ゾーン106を構成して、誘電体膜のUV硬化が、冷却ゾーン106によって実施できるようにすることによって、モジュール102を節約できる。この実施例では、冷却ゾーン106は、複数ウエハのUV工程を可能にする複数スロット・ウエハ処理機能によって構成できる。図示された実施例は、硬化工程を堆積工程に統合するのに適した複数チャンバ・ツールを示すが、本発明の他の実施例は、堆積工程および硬化工程には、別個のツールを利用できることを理解されたい。
【0010】
図示された実施例で、システム100のチャンバ102aは、UVランプまたはその他のUVエネルギー源を有して構成される変圧チャンバであり、このエネルギー源は、本発明のUV硬化工程が、モジュール102aにおいて実施できるようにする。1つの実施例において、チャンバ102aにおいてUVエネルギー源により生成されるエネルギーは、主に紫外線エネルギーである。図示された実施例では、システム100のチャンバ102bは、本発明の誘電体堆積工程を実施するのに適する種々のガス源に接続される。図示された実施例において、第2チャンバ102bに接続されるガス源は、メチルシランなどのオルガノシラン源,酸化窒素(N2O)などの酸素源,およびヘリウムなど不活性ガス源を含む。このため、システム100は、ウエハがチャンバ102b内の第1チャックの上に配置されるための工程に適する。ついで、カーボン・ドープ酸化シリコンが、チャンバ102b内で、CVD工程により、ウエハの上に堆積される。1つの実施例において、第1チャックは、CVD工程の間、約25℃を超えない温度に維持される。別の実施例では、第1チャックは、約17℃を超えない温度に維持される。CVDカーボン・ドープ酸化物を堆積後、ウエハが、バッファ・チャンバ104を介して、チャンバ102a内の第2チャックに移送される。チャンバ102a内では、カーボン・ドープ酸化物が、水銀アーク電球などの適切な光源からのUVエネルギーによって主に構成されることが望ましい光エネルギーに露光される。第2チャックは、約250から425℃の範囲の昇温に維持される温度制御チャックであり、その一方で、ウエハはUVエネルギー源に露光されることが望ましい。チャンバ102a内の圧力は、20Torr(約2.67kPa)未満の圧力に低減でき、約3から5Torr(約399.97から666.61Pa)の範囲内であれば尚望ましい。加えて、チャンバ102aは、窒素源と結合されて、UV露光が、窒素雰囲気内で実施されるようにできる。図2を参照して、UV放射工程の1実施例の図が示される。この実施例で、ウエハ202はチャック204の上に配置され、UVエネルギー源208により生成され、参照番号206により示されるUVエネルギーにさらされる。ウエハ202は、チャック204に移送される前に予め、誘電体材料(図2では具体的に示されない)によってコーティング済みである。1つの実施例では、UVランプ208は、主に紫外線エネルギーによって構成されるエネルギー206を生成する水銀アーク・ランプである。
【0011】
上記の明細書で、本発明に関して、特定の実施例を参照して説明してきた。しかしながら、当業者は、添付請求の範囲に記載される本発明の範囲から逸脱せずに、種々の変形および変更が可能であることを理解しよう。したがって、本明細書および図面は、厳密な意味ではなく、1つの例とみなし、上記すべての変形は、本発明の範囲内に含められることを意図される。長所,他の利点および問題の解決策について、特定の実施例に関して説明してきた。しかしながら、長所,利点,問題の解決策,ならびに長所,利点または解決策を想起させる、または顕著にする可能性があるいずれの要素も、すべての請求項の重大な,必要なまたは不可欠の特徴もしくは要素と解釈すべきでない。
【0012】
当業者は、図面内の要素が、単純かつ分かりやすいように示され、必ずしも縮尺通りに描かれていないことを理解しよう。例えば、図面内の一部の要素の寸法は、本発明の実施例に対する理解を深める一助として、他の要素よりも大きめに描かれている可能性がある。
【0013】
本発明は、添付図面では、あくまでも例として示され、これらによって制限されない。図面の同様の参照番号は、類似の要素を表す。
【図面の簡単な説明】
【図1】 本発明の1実施例によるクラスタ・ツールを示す。
【図2】 本発明の1実施例による半導体ウエハのUV照射を示す。
【符号の説明】
100 システム
102 モジュール
102a,102b,102c,102d,102e リアクタ・チャンバ
104 バッファ・チャンバ(ロボット・セクション)
106 冷却ゾーン
Claims (3)
- 半導体ウエハ上に低誘電率膜を形成する方法であって、
前記半導体ウエハの上にカーボン・ドープ酸化シリコン膜を特定温度において堆積する段階と、
前記カーボン・ドープ酸化シリコン膜に光エネルギーを照射することによって前記カーボン・ドープ酸化シリコン膜を硬化させる段階であって、前記光エネルギーの少なくとも30%が、可視光の周波数を上回る周波数である段階とによって構成され、
前記硬化させる段階は、2.67kPa(20Torr)未満の圧力下の窒素雰囲気中において、前記堆積する段階の温度より高く、かつ425℃未満の温度で10分未満の間にわたって行われることを特徴とする方法。 - 前記硬化させる段階は、200から250℃の範囲内の温度で行なわれることを特徴とする請求項1に記載の方法。
- 前記硬化させる段階は、1分未満の間にわたって行なわれることを特徴とする請求項1又は2に記載の方法。
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TW515033B (en) | 2002-12-21 |
KR100749290B1 (ko) | 2007-08-14 |
US6475930B1 (en) | 2002-11-05 |
JP2001257207A (ja) | 2001-09-21 |
EP1122333A3 (en) | 2003-10-29 |
CN1170307C (zh) | 2004-10-06 |
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