JP5049428B2 - 半導体ウエハ上に低誘電率膜を形成する方法 - Google Patents

半導体ウエハ上に低誘電率膜を形成する方法 Download PDF

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JP5049428B2
JP5049428B2 JP2001021505A JP2001021505A JP5049428B2 JP 5049428 B2 JP5049428 B2 JP 5049428B2 JP 2001021505 A JP2001021505 A JP 2001021505A JP 2001021505 A JP2001021505 A JP 2001021505A JP 5049428 B2 JP5049428 B2 JP 5049428B2
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wafer
dielectric constant
curing
film
deposition
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カート・エイチ・ジュンカー
ニコル・アール・グローブ
マリージーン・イー・アズラック
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Description

【０００１】
【産業上の利用分野】
本発明は、半導体加工の分野に関し、さらに詳しくは、低い熱予算で硬化工程を用いて低誘電率膜を作製することに関する。
【０００２】
【従来の技術】
半導体の作製分野では、低誘電率膜（low ｋ膜）が、総キャパシタンス・クロストーク（capacitance crosstalk）を低減するために、バックエンド（後部トランジスタ）モジュールで用いられる。一般に、低誘電率膜は、スピンオン工程または化学気相堆積法（ＣＶＤ）工程を用いて、堆積または形成される。低誘電率膜の形成後、硬化工程が一般に実施されて、化学結合の形成を完成し、残留成分をガス抜き（outgas）し、膜内の誘電率を低減する。この硬化工程は通常、バッチ・モードを用いて炉内で実施されるか、またはシングル・ウエハ・モードを用いて、ホットプレート上で実施される。いずれの場合にも、従来の硬化工程は、長時間（約３００℃を超える温度で約１時間を超える時間）、ウエハを昇温にさらすことがのぞましくない。個々の工程に割り当てられた熱予算の大部分を費消することに加え、従来の硬化工程は、製造者が追加の加工装置を取得する必要があるかもしれない時間のかかる製造段階を必要とする。そのため、ＵＶ露光を利用した低温で短時間の処理を利用して、低誘電率加熱硬化を実現し、膜の所要の誘電特性を実現することが望ましい。
【０００３】
【実施例】
本発明は一般に、紫外線（ＵＶ）硬化工程を利用して低誘電率膜が形成される半導体作製工程を企図する。例えば、低誘電率膜は、集積回路の隣接する導電層（通常、金属層という）を互いに絶縁するために使用できる。最初に、誘電体膜が、従来の半導体ウエハの上に堆積される。本発明により形成されるlow ｋ誘電体が、層間誘電体（ＩＬＤ）として利用される実施例では、ウエハは、分離構造の形成，ウエル構造の形成，およびｐ型とｎ型トランジスタの形成を含む幾つかの作製工程を通して予め加工済みのものとすることができる。１つの実施例では、誘電体膜の堆積は、化学気相堆積法（ＣＶＤ）を用いて実現される。別の実施例では、誘電体膜は、スピンオン工程によって堆積される。酸化物および他の誘電体材料を堆積するためのＣＶＤツールは、大半の半導体製造施設に存在するので、本発明の誘電体膜を堆積するＣＶＤ実施例は、製造施設内の既存の装置を利用する面で利点を有する可能性がある。好適な実施例では、堆積された誘電体膜は、比較的低い誘電率を有する（低誘電率膜）。低誘電率膜は、カーボン・ドープ（carbon doped）酸化シリコン膜によって構成できる。例えば、１つの実施例では、低誘電率膜は、オルガノシラン・ガス、およびＮ2Ｏなどの核種を帯びる酸素を、半導体ウエハが配置されるＣＶＤリアクタ・チャンバに送り込むことによって形成される。炭素ベースの酸化シリコンを形成するのに適するオルガノシランは、例えば、メチルシラン，ジメチルシラン，トリメチルシランおよびテトラメチルシランを含む。オルガノシランおよび核種を帯びる酸素のほかに、ヘリウムまたはアルゴンなどの不活性核種を、堆積段階の間に、リアクタ・チャンバに送り込んでもよい。
【０００４】
低誘電率膜のＣＶＤ形成は、低温工程または高温工程を用いて、適切に実施できる。１つの実施例において、低温工程は、ＣＶＤリアクタ・チャンバ内でウエハ・チャック（wafer chuck）を、約３Ｔｏｒｒ（約３９９．９７Ｐａ）の圧力で、約１０から２５℃の範囲の温度に維持することによって実施される。低温堆積工程は、より長い堆積時間を必要とするかもしれないが、その結果生成される誘電体膜は、より低い誘電率を有する可能性がある。加えて、低温工程は、熱予算が限られる製造工程に適する。別の実施例では、高温堆積工程が、誘電体膜の堆積中、ウエハ・チャックを約３５０から４００℃の範囲内の温度に維持することによって実施される。高温堆積工程は、比較的高い堆積速度の場合に望ましいかもしれない。
【０００５】
オルガノシラン・ベースの堆積は、シリコンと非結合シラノールに付着されるメチル基とＣＨx基（ｘ＜３）を含むＳｉ-Ｏ-Ｓｉ網状結合に特徴づけられる誘電体膜を生成する。堆積された誘電体膜の誘電率は一般に、約３．４から４．０の範囲内にある。約３．０未満の誘電率を有する誘電体膜を実現するため、本発明の好適な実施例は、硬化工程を含む。硬化工程は、堆積された膜内に縮合反応を生じ、この膜内でシラノール分子が互いに反応してＳｉ-Ｏ-Ｓｉ結合とウエハを形成する。好適な実施例では、硬化工程は、水、およびアンモニアとＳｉ−ＣＨの断片とその他の残渣とを含む他の残留成分を排除して、ＳｉＯxＣyＨz組成を有する低誘電率膜を作製する。さらに加工する前に低誘電率膜の硬化を行なうことは、これらの残留成分が、堆積された層に、汚染またはその他により後に影響を与えるのを防ぐ上で利点を有する。
【０００６】
本発明の１つの実施例において、堆積された誘電体膜の硬化は、電磁エネルギー（光エネルギー）によりウエハを照射することによって実現され、このエネルギーは、電磁スペクトルの紫外線（ＵＶ）部分の光エネルギー（波長が約４００ｎｍ未満の光エネルギー）であることが望ましい。誘電体膜のＵＶ照射は、膜を、水銀アーク・ランプなどのＵＶエネルギー源に露光することによって実現できる。１つの実施例では、選択されたＵＶエネルギー源により放射される総スペクトル輝度の少なくとも３０％は、可視光の周波数よりも高い周波数を有する（約４００ｎｍ未満の波長を有する）。
【０００７】
本発明の好適な実施例によるＵＶ硬化工程は、費消するウエハの熱予算をできるだけ少なくするため、約４２５℃を超えない温度にウエハを維持しながら実施される。このＵＶ硬化は、約１０分を超えない時間にわたり、ウエハを約２００から２５０℃の範囲内の温度に維持しつつ実現されるのであれば格段に望ましく、１分を超えない時間であれば尚望ましい。（２５０℃を超えない）低温のＵＶ硬化段階は、熱予算が限られる用途では望ましいかもしれないが、（４２５℃を超えない）より高温のＵＶ工程は、より短時間でより低い誘電率を有する誘電体膜を製造することができる。ＵＶエネルギー源自体は、ウエハの温度を著しく変化させないことが望ましい。すなわち、光エネルギーは、ウエハに対して著しい加熱効果を与えない。光エネルギーがウエハ加熱の主要メカニズムである急速な熱アニール型の照射とは対照的に、本明細書で考察される硬化工程は、１つまたは限られた数のＵＶ照射源を用いて実施できる。ウエハが個別に硬化される実施例（シングル・ウエハ・モード）では、１個のＵＶエネルギー源で十分かもしれない。複数のウエハが同時に硬化される実施例では、複数のＵＶ源が必要とされるかもしれないが、ＵＶ源の数は、各バッチで加工されるウエハの数に等しいか、これを下回ることが望ましい。
【０００８】
本発明の１実施例は、低誘電率膜を形成するための現場工程を意図し、この工程では、ウエハは、誘電体の堆積と硬化工程の間、空気にさらされない（堆積段階と硬化段階が、１つのツールを用いて実施される）。この低誘電率膜の現場形成を実現するのに適したクラスタ・ツール（システム）１００の実施例が、図１に示される。図示された実施例では、システム１００は、複数のリアクタ・チャンバ（モジュール）１０２ａから１０２ｅ（全体またはまとめて、モジュール１０２という）と、化学気相堆積法の当業者が熟知するような、種々のモジュール１０２間のウエハの移動を制御するためのロボット・セクション（バッファ・チャンバ）１０４とを含む。バッファ・チャンバ１０４は、ウエハを空気にさらさずに、種々のモジュール１０２間でウエハを移送するのに適する。モジュール１０２のそれぞれは、ウエハを受け取るためのウエハ・チャックを含むことが望ましい。モジュール１０２のそれぞれは、酸化物堆積モジュール，ＵＶ硬化モジュール，または他の適切なモジュールとして構成できる。図示された実施例では、例えば、モジュール１０２ａは、ＵＶモジュール専用にあてられ、一方、モジュール１０２ｂは、ＣＶＤ low ｋ誘電体チャンバ専用にあてられる。残りのモジュール１０２ｃ，１０２ｄおよび１０２ｅは、実装に依存して、堆積モジュールまたはＵＶモジュールとして実現できる。複数材料または集積誘電体構造を製造することが望ましい実施例では、例えば、モジュール１０２ｃを反射防止塗装（ＡＲＣ）またはパッシベーション・モジュールとして構成し、モジュール１０２ｄをＴＥＯＳ堆積モジュールとして、チャンバ１０２をＵＶモジュールとして構成するのが望ましいかもしれない。別の実施例では、システム１００は、特定の堆積工程専用に充てることができる。この実施例では、例えば、モジュール１０２ａと１０２ｅは、ＵＶ硬化モジュールとして使用でき、一方、モジュール１０２ｂ，１０２ｃおよび１０２ｄは、low ｋ誘電体の堆積専用に充てられる。
【０００９】
このため、システム１００は、チャンバ１０２ｂにウエハを移送することによって、lowｋ誘電体材料の堆積および硬化を実施するのに適しており、このチャンバでは、lowｋ堆積工程が実施され、その後、ウエハをモジュール１０２ａに移送して、ＵＶ硬化工程を実施する。ＵＶ硬化工程を、堆積工程と同じ装置に統合することによって、本発明の実施例は、工程費用を低減する上で利点を有する一方、工程の処理量を改善し、工程の欠陥を低減する統合された製造工程を意図する。システム１００が、参照番号１０６によって明示される冷却ゾーンを含む実施例では、ＵＶエネルギー源を有する冷却ゾーン１０６を構成して、誘電体膜のＵＶ硬化が、冷却ゾーン１０６によって実施できるようにすることによって、モジュール１０２を節約できる。この実施例では、冷却ゾーン１０６は、複数ウエハのＵＶ工程を可能にする複数スロット・ウエハ処理機能によって構成できる。図示された実施例は、硬化工程を堆積工程に統合するのに適した複数チャンバ・ツールを示すが、本発明の他の実施例は、堆積工程および硬化工程には、別個のツールを利用できることを理解されたい。
【００１０】
図示された実施例で、システム１００のチャンバ１０２ａは、ＵＶランプまたはその他のＵＶエネルギー源を有して構成される変圧チャンバであり、このエネルギー源は、本発明のＵＶ硬化工程が、モジュール１０２ａにおいて実施できるようにする。１つの実施例において、チャンバ１０２ａにおいてＵＶエネルギー源により生成されるエネルギーは、主に紫外線エネルギーである。図示された実施例では、システム１００のチャンバ１０２ｂは、本発明の誘電体堆積工程を実施するのに適する種々のガス源に接続される。図示された実施例において、第２チャンバ１０２ｂに接続されるガス源は、メチルシランなどのオルガノシラン源，酸化窒素（Ｎ２Ｏ）などの酸素源，およびヘリウムなど不活性ガス源を含む。このため、システム１００は、ウエハがチャンバ１０２ｂ内の第１チャックの上に配置されるための工程に適する。ついで、カーボン・ドープ酸化シリコンが、チャンバ１０２ｂ内で、ＣＶＤ工程により、ウエハの上に堆積される。１つの実施例において、第１チャックは、ＣＶＤ工程の間、約２５℃を超えない温度に維持される。別の実施例では、第１チャックは、約１７℃を超えない温度に維持される。ＣＶＤカーボン・ドープ酸化物を堆積後、ウエハが、バッファ・チャンバ１０４を介して、チャンバ１０２ａ内の第２チャックに移送される。チャンバ１０２ａ内では、カーボン・ドープ酸化物が、水銀アーク電球などの適切な光源からのＵＶエネルギーによって主に構成されることが望ましい光エネルギーに露光される。第２チャックは、約２５０から４２５℃の範囲の昇温に維持される温度制御チャックであり、その一方で、ウエハはＵＶエネルギー源に露光されることが望ましい。チャンバ１０２ａ内の圧力は、２０Ｔｏｒｒ（約２．６７ｋＰａ）未満の圧力に低減でき、約３から５Ｔｏｒｒ（約３９９．９７から６６６．６１Ｐａ）の範囲内であれば尚望ましい。加えて、チャンバ１０２ａは、窒素源と結合されて、ＵＶ露光が、窒素雰囲気内で実施されるようにできる。図２を参照して、ＵＶ放射工程の１実施例の図が示される。この実施例で、ウエハ２０２はチャック２０４の上に配置され、ＵＶエネルギー源２０８により生成され、参照番号２０６により示されるＵＶエネルギーにさらされる。ウエハ２０２は、チャック２０４に移送される前に予め、誘電体材料（図２では具体的に示されない）によってコーティング済みである。１つの実施例では、ＵＶランプ２０８は、主に紫外線エネルギーによって構成されるエネルギー２０６を生成する水銀アーク・ランプである。
【００１１】
上記の明細書で、本発明に関して、特定の実施例を参照して説明してきた。しかしながら、当業者は、添付請求の範囲に記載される本発明の範囲から逸脱せずに、種々の変形および変更が可能であることを理解しよう。したがって、本明細書および図面は、厳密な意味ではなく、１つの例とみなし、上記すべての変形は、本発明の範囲内に含められることを意図される。長所，他の利点および問題の解決策について、特定の実施例に関して説明してきた。しかしながら、長所，利点，問題の解決策，ならびに長所，利点または解決策を想起させる、または顕著にする可能性があるいずれの要素も、すべての請求項の重大な，必要なまたは不可欠の特徴もしくは要素と解釈すべきでない。
【００１２】
当業者は、図面内の要素が、単純かつ分かりやすいように示され、必ずしも縮尺通りに描かれていないことを理解しよう。例えば、図面内の一部の要素の寸法は、本発明の実施例に対する理解を深める一助として、他の要素よりも大きめに描かれている可能性がある。
【００１３】
本発明は、添付図面では、あくまでも例として示され、これらによって制限されない。図面の同様の参照番号は、類似の要素を表す。
【図面の簡単な説明】
【図１】 本発明の１実施例によるクラスタ・ツールを示す。
【図２】 本発明の１実施例による半導体ウエハのＵＶ照射を示す。
【符号の説明】
１００ システム
１０２ モジュール
１０２ａ，１０２ｂ，１０２ｃ，１０２ｄ，１０２ｅ リアクタ・チャンバ
１０４ バッファ・チャンバ（ロボット・セクション）
１０６ 冷却ゾーン

Claims (3)

  1. 半導体ウエハ上に低誘電率膜を形成する方法であって、
    前記半導体ウエハの上にカーボン・ドープ酸化シリコン膜を特定温度において堆積する段階と、
    前記カーボン・ドープ酸化シリコン膜に光エネルギーを照射することによって前記カーボン・ドープ酸化シリコン膜を硬化させる段階であって、前記光エネルギーの少なくとも３０％が、可視光の周波数を上回る周波数である段階とによって構成され、
    前記硬化させる段階は、２．６７ｋＰａ（２０Ｔｏｒｒ）未満の圧力下の窒素雰囲気中において、前記堆積する段階の温度より高く、かつ４２５℃未満の温度で１０分未満の間にわたって行われることを特徴とする方法。
  2. 前記硬化させる段階は、２００から２５０℃の範囲内の温度で行なわれることを特徴とする請求項１に記載の方法。
  3. 前記硬化させる段階は、１分未満の間にわたって行なわれることを特徴とする請求項１又は２に記載の方法。
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