JP5037103B2 - 炭化珪素半導体装置 - Google Patents
炭化珪素半導体装置 Download PDFInfo
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- JP5037103B2 JP5037103B2 JP2006329373A JP2006329373A JP5037103B2 JP 5037103 B2 JP5037103 B2 JP 5037103B2 JP 2006329373 A JP2006329373 A JP 2006329373A JP 2006329373 A JP2006329373 A JP 2006329373A JP 5037103 B2 JP5037103 B2 JP 5037103B2
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- silicon carbide
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 216
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 216
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 239000012535 impurity Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 description 20
- 230000015556 catabolic process Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Description
ただし、
ε r :炭化珪素の比誘電率
ε 0 :真空誘電率(F/m)
e:電子の電荷量(C)
N d1 :前記第1導電型炭化珪素ドリフト層の不純物濃度(cm −3 )
N d2 :前記第1導電型炭化珪素ソース層の不純物濃度(cm −3 )
N a :前記第2導電型炭化珪素チャネル層の不純物濃度(cm −3 )
V d :前記第1導電型炭化珪素ドリフト層と前記第2導電型炭化珪素チャネル層が形成するpn接合間における炭化珪素の拡散電位(eV)
V:前記第1導電型炭化珪素ドリフト層と前記第2導電型炭化珪素チャネル層が形成するpn接合に対して逆方向に印加される電圧の電位ポテンシャル(eV)
図1は、本実施の形態に係る炭化珪素半導体装置である炭化珪素MOSFETの断面図である。炭化珪素MOSFETは、n型炭化珪素基板1と、n型炭化珪素ドリフト層2と、p型炭化珪素ベース層3と、p型炭化珪素チャネル層4と、n型炭化珪素ソース層5と、p型炭化珪素コンタクト層6と、ゲート絶縁膜7と、ゲート電極8と、ソース電極9と、ドレイン電極10と、トレンチゲート電極部11を備える。
d>d1+d2・・・(3)
Claims (2)
- 第1導電型炭化珪素半導体基板表面に形成される第1導電型炭化珪素ドリフト層と、
前記第1導電型炭化珪素ドリフト層上に形成される第2導電型炭化珪素チャネル層と、
前記第2導電型炭化珪素チャネル層の下面に接して前記第1導電型炭化珪素ドリフト層中に設けられる第2導電型炭化珪素ベース層と、
前記第2導電型炭化珪素チャネル層上に形成される第1導電型炭化珪素ソース層と、
前記第1導電型炭化珪素ソース層、および、前記第2導電型炭化珪素ベース層に電気的に接続して設けられるソース電極と、
前記第1導電型炭化珪素半導体基板裏面に設けられるドレイン電極と、
前記第1導電型炭化珪素ソース層表面から、前記第2導電型炭化珪素チャネル層を貫通して、前記第1導電型炭化珪素ドリフト層に達するトレンチ内壁に絶縁膜を介して形成されるゲート電極とを備え、
前記第2導電型炭化珪素チャネル層の厚さd(μm)は以下の式(1)〜(3)を満足し、
前記第2導電型炭化珪素ベース層の下端は、前記トレンチの下端よりも下方に位置し、
前記第2導電型炭化珪素ベース層は、前記第2導電型炭化珪素ベース層による空乏層が前記トレンチの下方に広がる程度に、前記トレンチと離れて設けられた、
炭化珪素半導体装置。
ただし、
ε r :炭化珪素の比誘電率
ε 0 :真空誘電率(F/m)
e:電子の電荷量(C)
N d1 :前記第1導電型炭化珪素ドリフト層の不純物濃度(cm −3 )
N d2 :前記第1導電型炭化珪素ソース層の不純物濃度(cm −3 )
N a :前記第2導電型炭化珪素チャネル層の不純物濃度(cm −3 )
V d :前記第1導電型炭化珪素ドリフト層と前記第2導電型炭化珪素チャネル層が形成するpn接合間における炭化珪素の拡散電位(eV)
V:前記第1導電型炭化珪素ドリフト層と前記第2導電型炭化珪素チャネル層が形成するpn接合に対して逆方向に印加される電圧の電位ポテンシャル(eV) - 前記第2導電型炭化珪素チャネル層の不純物濃度は、前記第2導電型炭化珪素ベース層の不純物濃度よりも低い、
請求項1に記載の炭化珪素半導体装置。
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JP2006329373A JP5037103B2 (ja) | 2006-12-06 | 2006-12-06 | 炭化珪素半導体装置 |
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JP2006329373A JP5037103B2 (ja) | 2006-12-06 | 2006-12-06 | 炭化珪素半導体装置 |
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JP2008147232A JP2008147232A (ja) | 2008-06-26 |
JP5037103B2 true JP5037103B2 (ja) | 2012-09-26 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6237408B2 (ja) | 2014-03-28 | 2017-11-29 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
WO2016002769A1 (ja) | 2014-06-30 | 2016-01-07 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置およびその製造方法 |
US9954054B2 (en) | 2014-06-30 | 2018-04-24 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method for manufacturing the same |
US10424642B2 (en) | 2015-09-09 | 2019-09-24 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device |
JP7017733B2 (ja) | 2017-09-07 | 2022-02-09 | 国立研究開発法人産業技術総合研究所 | 半導体装置および半導体装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH088429A (ja) * | 1994-06-22 | 1996-01-12 | Nippondenso Co Ltd | 半導体装置 |
JP3158973B2 (ja) * | 1995-07-20 | 2001-04-23 | 富士電機株式会社 | 炭化けい素縦型fet |
JPH1098188A (ja) * | 1996-08-01 | 1998-04-14 | Kansai Electric Power Co Inc:The | 絶縁ゲート半導体装置 |
JP4738562B2 (ja) * | 2000-03-15 | 2011-08-03 | 三菱電機株式会社 | 半導体装置の製造方法 |
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