JP5036617B2 - 窒化物系半導体発光素子 - Google Patents

窒化物系半導体発光素子 Download PDF

Info

Publication number: JP5036617B2
Authority: JP; Japan
Prior art keywords: layer; nitride; undoped; type; based semiconductor
Prior art date: 2002-09-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP2008109596A

Other languages

English (en)

Japanese (ja)

Other versions

JP2008182275A (ja

Inventor

大二朗井上

康彦野村

雅幸畑

隆司狩野

勤山口

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sanyo Electric Co Ltd

Original Assignee

Sanyo Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-09-18

Filing date

2008-04-18

Publication date

2012-09-26

2008-04-18 Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd

2008-04-18 Priority to JP2008109596A priority Critical patent/JP5036617B2/ja

2008-08-07 Publication of JP2008182275A publication Critical patent/JP2008182275A/ja

2012-09-26 Application granted granted Critical

2012-09-26 Publication of JP5036617B2 publication Critical patent/JP5036617B2/ja

2023-09-11 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims description 235
150000004767 nitrides Chemical class 0.000 title claims description 225
239000000758 substrate Substances 0.000 claims description 53
239000010410 layer Substances 0.000 description 525
238000005253 cladding Methods 0.000 description 67
230000031700 light absorption Effects 0.000 description 38
239000012535 impurity Substances 0.000 description 33
239000013078 crystal Substances 0.000 description 29
230000007547 defect Effects 0.000 description 20
238000004519 manufacturing process Methods 0.000 description 20
239000011241 protective layer Substances 0.000 description 20
JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 18
239000007789 gas Substances 0.000 description 17
238000000034 method Methods 0.000 description 16
229910052594 sapphire Inorganic materials 0.000 description 15
239000010980 sapphire Substances 0.000 description 15
239000012159 carrier gas Substances 0.000 description 13
230000004888 barrier function Effects 0.000 description 10
230000000694 effects Effects 0.000 description 8
XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 8
229910002704 AlGaN Inorganic materials 0.000 description 7
239000000203 mixture Substances 0.000 description 7
239000002019 doping agent Substances 0.000 description 5
RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 5
IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 5
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
239000000463 material Substances 0.000 description 4
238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
230000004048 modification Effects 0.000 description 4
238000012986 modification Methods 0.000 description 4
229910052760 oxygen Inorganic materials 0.000 description 4
239000001301 oxygen Substances 0.000 description 4
238000001771 vacuum deposition Methods 0.000 description 4
238000005530 etching Methods 0.000 description 3
238000010884 ion-beam technique Methods 0.000 description 3
239000002994 raw material Substances 0.000 description 3
239000000969 carrier Substances 0.000 description 2
230000002542 deteriorative effect Effects 0.000 description 2
229910052738 indium Inorganic materials 0.000 description 2
238000001459 lithography Methods 0.000 description 2
230000003287 optical effect Effects 0.000 description 2
238000005268 plasma chemical vapour deposition Methods 0.000 description 2
238000005498 polishing Methods 0.000 description 2
238000000926 separation method Methods 0.000 description 2
MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
229910004298 SiO 2 Inorganic materials 0.000 description 1
230000004913 activation Effects 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
238000004891 communication Methods 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
238000000407 epitaxy Methods 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
125000005842 heteroatom Chemical group 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
239000010453 quartz Substances 0.000 description 1
230000006798 recombination Effects 0.000 description 1
238000005215 recombination Methods 0.000 description 1
239000011347 resin Substances 0.000 description 1
229920005989 resin Polymers 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
239000002356 single layer Substances 0.000 description 1
239000011029 spinel Substances 0.000 description 1
229910052596 spinel Inorganic materials 0.000 description 1
239000010421 standard material Substances 0.000 description 1
JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
238000007738 vacuum evaporation Methods 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

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Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Led Devices (AREA)
Semiconductor Lasers (AREA)

JP2008109596A 2002-09-18 2008-04-18 窒化物系半導体発光素子 Expired - Fee Related JP5036617B2 (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP2008109596A JP5036617B2 (ja)	2002-09-18	2008-04-18	窒化物系半導体発光素子

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2002271968		2002-09-18
JP2002271968		2002-09-18
JP2008109596A JP5036617B2 (ja)	2002-09-18	2008-04-18	窒化物系半導体発光素子

Related Parent Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2003319528A Division JP4162560B2 (ja)	2002-09-18	2003-09-11	窒化物系半導体発光素子

Publications (2)

Publication Number	Publication Date
JP2008182275A JP2008182275A (ja)	2008-08-07
JP5036617B2 true JP5036617B2 (ja)	2012-09-26

Family

ID=32024888

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2008109596A Expired - Fee Related JP5036617B2 (ja)	2002-09-18	2008-04-18	窒化物系半導体発光素子

Country Status (3)

Country	Link
US (1)	US7485902B2 (zh)
JP (1)	JP5036617B2 (zh)
CN (1)	CN100517773C (zh)

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TWI367008B (en) *	2004-03-03	2012-06-21	Univ Columbia	Methods and systems for reducing mac layer handoff latency in wireless networks
KR100611491B1 (ko) *	2004-08-26	2006-08-10	엘지이노텍 주식회사	질화물 반도체 발광소자 및 그 제조방법
JP2006148032A (ja) *	2004-11-25	2006-06-08	Toshiba Corp	半導体レーザ装置
KR100631981B1 (ko) *	2005-04-07	2006-10-11	삼성전기주식회사	수직구조 ３족 질화물 발광 소자 및 그 제조 방법
KR100588377B1 (ko) *	2005-05-10	2006-06-09	삼성전기주식회사	수직구조 질화갈륨계 발광다이오드 소자 및 그 제조방법
KR100631414B1 (ko) *	2005-05-19	2006-10-04	삼성전기주식회사	반도체 발광 다이오드 및 그 제조방법
JP2007048869A (ja) *	2005-08-09	2007-02-22	Sony Corp	ＧａＮ系半導体発光素子の製造方法
US8946674B2 (en) *	2005-08-31	2015-02-03	University Of Florida Research Foundation, Inc.	Group III-nitrides on Si substrates using a nanostructured interlayer
JP4135019B2 (ja) *	2006-04-28	2008-08-20	住友電気工業株式会社	半導体レーザ
CN101449394A (zh) *	2006-05-26	2009-06-03	罗姆股份有限公司	氮化物半导体发光元件
US8222057B2 (en) *	2006-08-29	2012-07-17	University Of Florida Research Foundation, Inc.	Crack free multilayered devices, methods of manufacture thereof and articles comprising the same
JP4835662B2 (ja) *	2008-08-27	2011-12-14	住友電気工業株式会社	窒化物系半導体発光素子を作製する方法、及びエピタキシャルウエハを作製する方法
US9224595B2 (en) *	2008-09-01	2015-12-29	Sophia School Corporation	Semiconductor optical element array and method of manufacturing the same
CN101728451B (zh) *	2008-10-21	2013-10-30	展晶科技(深圳)有限公司	半导体光电元件
FR2948816B1 (fr) *	2009-07-30	2011-08-12	Univ Paris Sud	Dispositifs electro-optiques bases sur la variation d'indice ou d'absorption dans des transitions isb.
US20110049469A1 (en) *	2009-09-03	2011-03-03	Rajaram Bhat	Enhanced P-Contacts For Light Emitting Devices
JP5559814B2 (ja) *	2009-12-08	2014-07-23	パナソニック株式会社	窒化物系半導体発光ダイオードおよびその製造方法
US9620671B2 (en)	2012-06-13	2017-04-11	Sharp Kabushiki Kaisha	Nitride semiconductor light emitting element and method for manufacturing same
JP5733295B2 (ja) *	2012-12-04	2015-06-10	住友電気工業株式会社	窒化物半導体発光素子、窒化物半導体発光素子を作製する方法
KR20140100115A (ko) *	2013-02-05	2014-08-14	삼성전자주식회사	반도체 발광 소자
CN106876546B (zh) *	2017-01-12	2019-03-08	华灿光电（浙江）有限公司	一种氮化镓基发光二极管的外延片及其制备方法
JP7448782B2 (ja) *	2019-12-20	2024-03-13	日亜化学工業株式会社	窒化物半導体素子の製造方法

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JP2002299768A (ja)	2001-03-30	2002-10-11	Matsushita Electric Ind Co Ltd	半導体発光装置
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US20050082575A1 (en) *	2002-10-29	2005-04-21	Lung-Chien Chen	Structure and manufacturing method for GaN light emitting diodes
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2003
- 2003-09-17 US US10/663,714 patent/US7485902B2/en not_active Expired - Fee Related
- 2003-09-18 CN CNB031594026A patent/CN100517773C/zh not_active Expired - Fee Related
2008
- 2008-04-18 JP JP2008109596A patent/JP5036617B2/ja not_active Expired - Fee Related

Also Published As

Publication number	Publication date
CN1487606A (zh)	2004-04-07
US20040061119A1 (en)	2004-04-01
US7485902B2 (en)	2009-02-03
JP2008182275A (ja)	2008-08-07
CN100517773C (zh)	2009-07-22

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Publication	Publication Date	Title
JP5036617B2 (ja)	2012-09-26	窒化物系半導体発光素子
US8101465B2 (en)	2012-01-24	Method of fabricating a semiconductor device with a back electrode
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JP3864735B2 (ja)	2007-01-10	半導体発光素子およびその製造方法
JP3705047B2 (ja)	2005-10-12	窒化物半導体発光素子
KR100902109B1 (ko)	2009-06-09	질화 갈륨계 화합물 반도체 소자
JP4304750B2 (ja)	2009-07-29	窒化物半導体の成長方法及び窒化物半導体素子
KR20030064629A (ko)	2003-08-02	반도체 발광 소자 및 그 제조 방법
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KR100545999B1 (ko)	2006-01-25	질화물반도체소자
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