JP5036012B2 - Iii/v族化合物を堆積させる方法 - Google Patents
Iii/v族化合物を堆積させる方法 Download PDFInfo
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- JP5036012B2 JP5036012B2 JP2010528152A JP2010528152A JP5036012B2 JP 5036012 B2 JP5036012 B2 JP 5036012B2 JP 2010528152 A JP2010528152 A JP 2010528152A JP 2010528152 A JP2010528152 A JP 2010528152A JP 5036012 B2 JP5036012 B2 JP 5036012B2
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- 238000000034 method Methods 0.000 title claims description 159
- 150000001875 compounds Chemical class 0.000 title description 29
- 238000000151 deposition Methods 0.000 title description 22
- 239000007789 gas Substances 0.000 claims description 256
- 239000000758 substrate Substances 0.000 claims description 152
- 229910052751 metal Inorganic materials 0.000 claims description 111
- 239000002184 metal Substances 0.000 claims description 111
- 239000002243 precursor Substances 0.000 claims description 76
- 238000012545 processing Methods 0.000 claims description 76
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 59
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 40
- 229910052733 gallium Inorganic materials 0.000 claims description 36
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 34
- 229910001510 metal chloride Inorganic materials 0.000 claims description 30
- 150000004767 nitrides Chemical class 0.000 claims description 30
- 229910052757 nitrogen Inorganic materials 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 28
- 229910052782 aluminium Inorganic materials 0.000 claims description 24
- 239000000460 chlorine Substances 0.000 claims description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 22
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 22
- 229910002601 GaN Inorganic materials 0.000 claims description 21
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 20
- 229910052736 halogen Inorganic materials 0.000 claims description 19
- 150000002367 halogens Chemical class 0.000 claims description 19
- 229910021529 ammonia Inorganic materials 0.000 claims description 16
- 229910052801 chlorine Inorganic materials 0.000 claims description 15
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 13
- 239000012159 carrier gas Substances 0.000 claims description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 10
- 229910052594 sapphire Inorganic materials 0.000 claims description 10
- 239000010980 sapphire Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims 1
- 230000008569 process Effects 0.000 description 97
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 55
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 48
- 238000004140 cleaning Methods 0.000 description 41
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 28
- 239000000463 material Substances 0.000 description 28
- 239000011261 inert gas Substances 0.000 description 22
- 230000008021 deposition Effects 0.000 description 19
- 150000004820 halides Chemical class 0.000 description 17
- 229910001338 liquidmetal Inorganic materials 0.000 description 16
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 14
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 11
- 238000005019 vapor deposition process Methods 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000009826 distribution Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 8
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 8
- -1 hydrazine compound Chemical class 0.000 description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 8
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 8
- 239000007787 solid Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 238000010790 dilution Methods 0.000 description 4
- 239000012895 dilution Substances 0.000 description 4
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000004616 Pyrometry Methods 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000002259 gallium compounds Chemical class 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Electrochemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
Description
[0001]本発明の実施形態は、一般的には、発光ダイオード(LED)のようなデバイスの製造、特に、有機金属化学気相堆積(MOCVD)プロセスや水素化物気相エピタキシー(HVPE)堆積プロセスによってIII−V族の材料を形成する方法に関する。
[0002]III族の窒化物半導体は、短波長発光ダイオード(LED)、レーザダイオード(LD)、高電力、高周波数、高温のトランジスタと集積回路を含む電子デバイスのような様々な半導体デバイスの開発と製造においてより大きな重要性を見出している。III族の窒化物を堆積させるのに用いられてきた一つの方法は、水素化物気相エピタキシー(HVPE)堆積である。HVPEにおいては、ハロゲン化合物がIII族の金属或いは元素と反応して、それぞれ金属/元素のハロゲン化物前駆体(例えば、金属塩化物)を形成する。ハロゲン化物前駆体は、次に、窒素の前駆体と反応して、III族の窒化物を形成する。
HX(気体)+ M(液体金属)→ MX(気体)+H(気体)
式中、X=Cl、Br、又はI、M=Ga、Al、又はIn。
ハロゲンに対して、式は以下の通りである:
Z(気体)+ M(液体金属)→ MZ(気体)
式中、Z=Cl2、Br2、又はI2、M=Ga、Al、又はIn。
以後、気体金属含有化学種は、“金属含有前駆体”(例えば、金属塩化物)と呼ばれる。
Claims (12)
- III族の金属窒化物膜を形成する方法であって:
一つ以上のサファイア基板を前処理温度まで加熱するステップと;
各々の前記一つ以上のサファイア基板の表面が前処理温度であるとき、前記表面を前処理ガス混合物にさらし、前処理面を形成するステップであって、前記前処理ガス混合物は、アンモニア(NH3)とハロゲンガスとを備える、前記ステップと;
を備える方法。 - 前記ハロゲンガスは、塩素(Cl2)である、請求項1に記載の方法。
- 前記前処理ガス混合物は、1モルパーセント〜10モルパーセントの濃度の塩素と、5モルパーセント〜25モルパーセントの濃度のアンモニアとを備える、請求項2に記載の方法。
- 各々の前記一つ以上のサファイア基板上の前記前処理面にわたり、III族の金属窒化物層を形成するステップを更に備える、請求項1に記載の方法。
- 前記III族の金属窒化物層を形成するステップが、ガリウム窒化物層またはアルミニウム窒化物層を形成する工程を備える、請求項4に記載の方法。
- 前記III族の金属窒化物層を形成するステップは、窒素含有前駆ガスと金属塩化物ガスに前記一つ以上のサファイア基板をさらす工程を更に備える、請求項4に記載の方法。
- 前記窒素含有前駆ガスは、アンモニアを含み、前記金属塩化物ガスは、金属源を、塩素(Cl2)を含む第1処理ガスにさらすことにより形成され、前記金属源は、ガリウム、アルミニウム、インジウムから成る群より選択される元素を含む、請求項6に記載の方法。
- 前記前処理面を、アンモニア及びキャリヤガスを含むガス混合物にさらすステップを更に備える、請求項1に記載の方法。
- 前記キャリヤガスは、窒素を含む、請求項8に記載の方法。
- 前記サファイア基板は、単結晶サファイア基板である、請求項1に記載の方法。
- 各々の前記一つ以上のサファイア基板の表面を前記前処理ガス混合物にさらすステップは、内部に前記一つ以上のサファイア基板が配置される処理チャンバ内の圧力を760トール未満に維持する工程を更に備える、請求項1に記載の方法。
- 前記前処理温度は、800℃〜1100℃の間である、請求項11に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US97804007P | 2007-10-05 | 2007-10-05 | |
US60/978,040 | 2007-10-05 | ||
PCT/US2008/078687 WO2009046261A1 (en) | 2007-10-05 | 2008-10-03 | Method for depositing group iii/v compounds |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010541290A JP2010541290A (ja) | 2010-12-24 |
JP5036012B2 true JP5036012B2 (ja) | 2012-09-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010528152A Expired - Fee Related JP5036012B2 (ja) | 2007-10-05 | 2008-10-03 | Iii/v族化合物を堆積させる方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090149008A1 (ja) |
JP (1) | JP5036012B2 (ja) |
KR (1) | KR101232800B1 (ja) |
CN (3) | CN101831694B (ja) |
TW (1) | TWI421912B (ja) |
WO (1) | WO2009046261A1 (ja) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090136652A1 (en) * | 2007-06-24 | 2009-05-28 | Applied Materials, Inc. | Showerhead design with precursor source |
US20080314311A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Hvpe showerhead design |
US8568529B2 (en) * | 2009-04-10 | 2013-10-29 | Applied Materials, Inc. | HVPE chamber hardware |
US8183132B2 (en) * | 2009-04-10 | 2012-05-22 | Applied Materials, Inc. | Methods for fabricating group III nitride structures with a cluster tool |
WO2010124261A2 (en) * | 2009-04-24 | 2010-10-28 | Applied Materials, Inc. | Substrate pretreatment for subsequent high temperature group iii depositions |
US20100273291A1 (en) * | 2009-04-28 | 2010-10-28 | Applied Materials, Inc. | Decontamination of mocvd chamber using nh3 purge after in-situ cleaning |
TW201039381A (en) * | 2009-04-29 | 2010-11-01 | Applied Materials Inc | Method of forming in-situ pre-GaN deposition layer in HVPE |
CN102484175A (zh) * | 2009-07-31 | 2012-05-30 | 应用材料公司 | 具有提高的量子效率的发光二极管和制造方法 |
US8623148B2 (en) * | 2009-09-10 | 2014-01-07 | Matheson Tri-Gas, Inc. | NF3 chamber clean additive |
US9834860B2 (en) * | 2009-10-14 | 2017-12-05 | Alta Devices, Inc. | Method of high growth rate deposition for group III/V materials |
US11393683B2 (en) | 2009-10-14 | 2022-07-19 | Utica Leaseco, Llc | Methods for high growth rate deposition for forming different cells on a wafer |
US20110256692A1 (en) | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
JP5787324B2 (ja) * | 2010-05-12 | 2015-09-30 | 国立大学法人東京農工大学 | 三塩化ガリウムガスの製造方法及び窒化物半導体結晶の製造方法 |
TWI407506B (zh) * | 2010-09-01 | 2013-09-01 | Univ Nat Chiao Tung | 一種氮化物半導體磊晶層的表面處理方法 |
US9076827B2 (en) | 2010-09-14 | 2015-07-07 | Applied Materials, Inc. | Transfer chamber metrology for improved device yield |
JP2012064811A (ja) * | 2010-09-16 | 2012-03-29 | Toshiba Corp | 半導体素子の製造方法 |
TWI534291B (zh) | 2011-03-18 | 2016-05-21 | 應用材料股份有限公司 | 噴淋頭組件 |
US20120270384A1 (en) * | 2011-04-22 | 2012-10-25 | Applied Materials, Inc. | Apparatus for deposition of materials on a substrate |
US8778783B2 (en) | 2011-05-20 | 2014-07-15 | Applied Materials, Inc. | Methods for improved growth of group III nitride buffer layers |
US8853086B2 (en) | 2011-05-20 | 2014-10-07 | Applied Materials, Inc. | Methods for pretreatment of group III-nitride depositions |
US8980002B2 (en) | 2011-05-20 | 2015-03-17 | Applied Materials, Inc. | Methods for improved growth of group III nitride semiconductor compounds |
CN103132140A (zh) * | 2011-11-23 | 2013-06-05 | 甘志银 | 氢化物气相外延装置 |
TWI632151B (zh) | 2011-11-28 | 2018-08-11 | 烏明克股份有限兩合公司 | 第iiia族金屬的三烷基化合物之製法 |
DE102012013941A1 (de) * | 2012-07-16 | 2014-01-16 | Umicore Ag & Co. Kg | Verfahren zur Herstellung von Galliumtrialkylverbindungen |
US9299560B2 (en) * | 2012-01-13 | 2016-03-29 | Applied Materials, Inc. | Methods for depositing group III-V layers on substrates |
CN103361624B (zh) * | 2012-03-30 | 2015-07-01 | 理想能源设备(上海)有限公司 | 金属有机化合物化学气相沉积方法及其装置 |
US8822314B2 (en) * | 2012-06-14 | 2014-09-02 | Palo Alto Research Center Incorporated | Method of growing epitaxial layers on a substrate |
US9099381B2 (en) | 2012-11-15 | 2015-08-04 | International Business Machines Corporation | Selective gallium nitride regrowth on (100) silicon |
CN103123947B (zh) * | 2012-12-07 | 2018-01-19 | 鹤山丽得电子实业有限公司 | 一种改善各种衬底外延底层长晶质量的方法 |
JP6510413B2 (ja) | 2013-09-11 | 2019-05-08 | 国立大学法人東京農工大学 | 窒化物半導体結晶、製造方法および製造装置 |
JP6320824B2 (ja) * | 2014-03-31 | 2018-05-09 | 株式会社東芝 | ガス供給管、およびガス処理装置 |
JP6147693B2 (ja) * | 2014-03-31 | 2017-06-14 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、およびプログラム |
US20150361582A1 (en) * | 2014-06-17 | 2015-12-17 | Veeco Instruments, Inc. | Gas Flow Flange For A Rotating Disk Reactor For Chemical Vapor Deposition |
US10118828B2 (en) * | 2015-10-02 | 2018-11-06 | Asm Ip Holding B.V. | Tritertbutyl aluminum reactants for vapor deposition |
WO2019140445A2 (en) * | 2018-01-15 | 2019-07-18 | Alliance For Sustainable Energy, Llc | Hydride enhanced growth rates in hydride vapor phase epitaxy |
JP6744347B2 (ja) * | 2018-03-02 | 2020-08-19 | 東芝デバイス&ストレージ株式会社 | 半導体装置の製造方法 |
DE102019008928B9 (de) * | 2019-12-20 | 2021-08-26 | Azur Space Solar Power Gmbh | Gasphasenepitaxieverfahren |
CN113363338A (zh) * | 2021-06-02 | 2021-09-07 | 中国电子科技集团公司第四十六研究所 | 一种在GaAs衬底上生长GaInP薄膜的方法 |
CN114134572B (zh) * | 2021-11-12 | 2024-06-21 | 中国电子科技集团公司第四十六研究所 | 一种hvpe法生长氮化铝的辅助加热体装置及方法 |
Family Cites Families (99)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8332394D0 (en) * | 1983-12-05 | 1984-01-11 | Pilkington Brothers Plc | Coating apparatus |
US4851295A (en) * | 1984-03-16 | 1989-07-25 | Genus, Inc. | Low resistivity tungsten silicon composite film |
US5268327A (en) * | 1984-04-27 | 1993-12-07 | Advanced Energy Fund Limited Partnership | Epitaxial compositions |
JPS63103894A (ja) * | 1986-10-21 | 1988-05-09 | Nec Corp | 窒化ガリウム結晶の成長方法 |
US4763602A (en) * | 1987-02-25 | 1988-08-16 | Glasstech Solar, Inc. | Thin film deposition apparatus including a vacuum transport mechanism |
US5348911A (en) * | 1987-06-30 | 1994-09-20 | Aixtron Gmbh | Material-saving process for fabricating mixed crystals |
USD329839S (en) * | 1990-01-31 | 1992-09-29 | Hohner Automation Societe Anonyme | Incremental coder |
EP0576566B1 (en) * | 1991-03-18 | 1999-05-26 | Trustees Of Boston University | A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
WO1992022084A1 (en) * | 1991-05-21 | 1992-12-10 | Advantage Production Technology, Inc. | Organic preclean for improving vapor phase wafer etch uniformity |
US5273588A (en) * | 1992-06-15 | 1993-12-28 | Materials Research Corporation | Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means |
US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
US5486235A (en) * | 1993-08-09 | 1996-01-23 | Applied Materials, Inc. | Plasma dry cleaning of semiconductor processing chambers |
US5647911A (en) * | 1993-12-14 | 1997-07-15 | Sony Corporation | Gas diffuser plate assembly and RF electrode |
US5679152A (en) * | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
WO1995027570A1 (en) * | 1994-04-08 | 1995-10-19 | Ray Mark A | Selective plasma deposition |
GB9411911D0 (en) * | 1994-06-14 | 1994-08-03 | Swan Thomas & Co Ltd | Improvements in or relating to chemical vapour deposition |
US5715361A (en) * | 1995-04-13 | 1998-02-03 | Cvc Products, Inc. | Rapid thermal processing high-performance multizone illuminator for wafer backside heating |
US5667592A (en) * | 1996-04-16 | 1997-09-16 | Gasonics International | Process chamber sleeve with ring seals for isolating individual process modules in a common cluster |
JPH1041548A (ja) * | 1996-07-24 | 1998-02-13 | Sumitomo Electric Ind Ltd | 化合物半導体気相成長方法 |
US6177292B1 (en) * | 1996-12-05 | 2001-01-23 | Lg Electronics Inc. | Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate |
US5855675A (en) * | 1997-03-03 | 1999-01-05 | Genus, Inc. | Multipurpose processing chamber for chemical vapor deposition processes |
US6270569B1 (en) * | 1997-06-11 | 2001-08-07 | Hitachi Cable Ltd. | Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method |
TW393786B (en) * | 1998-03-26 | 2000-06-11 | Min Shr | Method for manufacturing an epitaxial chip |
US6464843B1 (en) * | 1998-03-31 | 2002-10-15 | Lam Research Corporation | Contamination controlling method and apparatus for a plasma processing chamber |
US6086673A (en) * | 1998-04-02 | 2000-07-11 | Massachusetts Institute Of Technology | Process for producing high-quality III-V nitride substrates |
WO1999066565A1 (en) * | 1998-06-18 | 1999-12-23 | University Of Florida | Method and apparatus for producing group-iii nitrides |
US6190732B1 (en) * | 1998-09-03 | 2001-02-20 | Cvc Products, Inc. | Method and system for dispensing process gas for fabricating a device on a substrate |
US6413839B1 (en) * | 1998-10-23 | 2002-07-02 | Emcore Corporation | Semiconductor device separation using a patterned laser projection |
US6373114B1 (en) * | 1998-10-23 | 2002-04-16 | Micron Technology, Inc. | Barrier in gate stack for improved gate dielectric integrity |
KR100304664B1 (ko) * | 1999-02-05 | 2001-09-26 | 윤종용 | GaN막 제조 방법 |
US6309465B1 (en) * | 1999-02-18 | 2001-10-30 | Aixtron Ag. | CVD reactor |
US6200893B1 (en) * | 1999-03-11 | 2001-03-13 | Genus, Inc | Radical-assisted sequential CVD |
US6305314B1 (en) * | 1999-03-11 | 2001-10-23 | Genvs, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
US6540838B2 (en) * | 2000-11-29 | 2003-04-01 | Genus, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
US6179913B1 (en) * | 1999-04-16 | 2001-01-30 | Cbl Technologies, Inc. | Compound gas injection system and methods |
US6290774B1 (en) * | 1999-05-07 | 2001-09-18 | Cbl Technology, Inc. | Sequential hydride vapor phase epitaxy |
TW477009B (en) * | 1999-05-26 | 2002-02-21 | Tadahiro Ohmi | Plasma process device |
US6206972B1 (en) * | 1999-07-08 | 2001-03-27 | Genus, Inc. | Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes |
US6569765B1 (en) * | 1999-08-26 | 2003-05-27 | Cbl Technologies, Inc | Hybrid deposition system and methods |
US6489241B1 (en) * | 1999-09-17 | 2002-12-03 | Applied Materials, Inc. | Apparatus and method for surface finishing a silicon film |
JP4633214B2 (ja) | 1999-12-08 | 2011-02-16 | 富士通株式会社 | エポキシ樹脂組成物 |
US6897119B1 (en) * | 1999-12-22 | 2005-05-24 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
US6503330B1 (en) * | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
US6551399B1 (en) * | 2000-01-10 | 2003-04-22 | Genus Inc. | Fully integrated process for MIM capacitors using atomic layer deposition |
ATE249532T1 (de) * | 2000-02-04 | 2003-09-15 | Aixtron Ag | Vorrichtung und verfahren zum abscheiden einer oder mehrerer schichten auf ein substrat |
JP4849705B2 (ja) * | 2000-03-24 | 2012-01-11 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ生成導入部材及び誘電体 |
WO2001080298A1 (en) * | 2000-04-17 | 2001-10-25 | Mattson Technology, Inc. | Uv pretreatment process for ultra-thin oxynitride for formation of silicon nitride films |
US6616870B1 (en) * | 2000-08-07 | 2003-09-09 | Shipley Company, L.L.C. | Method of producing high aspect ratio domes by vapor deposition |
DE10043601A1 (de) * | 2000-09-01 | 2002-03-14 | Aixtron Ag | Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten |
DE10048759A1 (de) * | 2000-09-29 | 2002-04-11 | Aixtron Gmbh | Verfahren und Vorrichtung zum Abscheiden insbesondere organischer Schichten im Wege der OVPD |
DE10056029A1 (de) * | 2000-11-11 | 2002-05-16 | Aixtron Ag | Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor |
DE10057134A1 (de) * | 2000-11-17 | 2002-05-23 | Aixtron Ag | Verfahren zum Abscheiden von insbesondere kristallinen Schichten sowie Vorrichtung zur Durchführung des Verfahrens |
AU2002219966A1 (en) * | 2000-11-30 | 2002-06-11 | North Carolina State University | Methods and apparatus for producing m'n based materials |
US6905547B1 (en) * | 2000-12-21 | 2005-06-14 | Genus, Inc. | Method and apparatus for flexible atomic layer deposition |
JP2002217118A (ja) * | 2001-01-22 | 2002-08-02 | Japan Pionics Co Ltd | 窒化ガリウム膜半導体の製造装置、排ガス浄化装置、及び製造設備 |
JP3631724B2 (ja) * | 2001-03-27 | 2005-03-23 | 日本電気株式会社 | Iii族窒化物半導体基板およびその製造方法 |
US6706119B2 (en) * | 2001-03-30 | 2004-03-16 | Technologies And Devices International, Inc. | Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE |
DE10118130A1 (de) * | 2001-04-11 | 2002-10-17 | Aixtron Ag | Vorrichtung oder Verfahren zum Abscheiden von insbesondere kristallinen Schichten auf insbesondere kristallinen Substraten aus der Gasphase |
DE10124609B4 (de) * | 2001-05-17 | 2012-12-27 | Aixtron Se | Verfahren zum Abscheiden aktiver Schichten auf Substraten |
KR100387242B1 (ko) * | 2001-05-26 | 2003-06-12 | 삼성전기주식회사 | 반도체 발광소자의 제조방법 |
US7211833B2 (en) * | 2001-07-23 | 2007-05-01 | Cree, Inc. | Light emitting diodes including barrier layers/sublayers |
WO2003054929A2 (de) * | 2001-12-21 | 2003-07-03 | Aixtron Ag | Verfahren zum abscheiden von iii-v-halbleiterschichten auf einem nicht-iii-v-substrat |
DE10163394A1 (de) * | 2001-12-21 | 2003-07-03 | Aixtron Ag | Verfahren und Vorrichtung zum Abscheiden kristalliner Schichten und auf kristallinen Substraten |
CN100428410C (zh) * | 2002-01-09 | 2008-10-22 | 南京大学 | 一种改进氢化物气相外延生长GaN材料均匀性的方法和装置 |
AUPS240402A0 (en) * | 2002-05-17 | 2002-06-13 | Macquarie Research Limited | Gallium nitride |
CN1324772C (zh) * | 2002-06-19 | 2007-07-04 | 日本电信电话株式会社 | 半导体发光器件 |
US7115896B2 (en) * | 2002-12-04 | 2006-10-03 | Emcore Corporation | Semiconductor structures for gallium nitride-based devices |
US7018940B2 (en) * | 2002-12-30 | 2006-03-28 | Genus, Inc. | Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes |
JP4026529B2 (ja) * | 2003-04-10 | 2007-12-26 | 東京エレクトロン株式会社 | シャワーヘッド構造及び処理装置 |
CN101068950A (zh) * | 2003-05-30 | 2007-11-07 | 阿维扎技术公司 | 气体分配*** |
KR100533636B1 (ko) * | 2003-12-20 | 2005-12-06 | 삼성전기주식회사 | 질화물 반도체 제조방법 및 그에 따라 제조된 질화물반도체구조 |
DE102004009130A1 (de) * | 2004-02-25 | 2005-09-15 | Aixtron Ag | Einlasssystem für einen MOCVD-Reaktor |
KR100718188B1 (ko) * | 2004-05-07 | 2007-05-15 | 삼성코닝 주식회사 | 비극성 a면 질화물 반도체 단결정 기판 및 이의 제조방법 |
GB2415707A (en) * | 2004-06-30 | 2006-01-04 | Arima Optoelectronic | Vertical hydride vapour phase epitaxy deposition using a homogenising diaphragm |
US7368368B2 (en) * | 2004-08-18 | 2008-05-06 | Cree, Inc. | Multi-chamber MOCVD growth apparatus for high performance/high throughput |
US8298624B2 (en) * | 2004-09-27 | 2012-10-30 | Gallium Enterprises Pty Ltd. | Method and apparatus for growing a group (III) metal nitride film and a group (III) metal nitride film |
CN2793100Y (zh) * | 2004-10-19 | 2006-07-05 | 吉林大学 | 氧化锌生长用低压金属有机化学汽相淀积设备 |
KR100728533B1 (ko) * | 2004-11-23 | 2007-06-15 | 삼성코닝 주식회사 | 질화갈륨 단결정 후막 및 이의 제조방법 |
US7682940B2 (en) * | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
DE102004058521A1 (de) * | 2004-12-04 | 2006-06-14 | Aixtron Ag | Verfahren und Vorrichtung zum Abscheiden von dicken Gallium-Nitrit-Schichten auf einem Saphirsubstrat und zugehörigen Substrathalter |
JP2006179810A (ja) * | 2004-12-24 | 2006-07-06 | Tokyo Univ Of Agriculture & Technology | Iii族窒化物結晶の製造方法 |
CN101845670A (zh) * | 2005-03-10 | 2010-09-29 | 加利福尼亚大学董事会 | 用于生长平坦半极性氮化镓的技术 |
JP2006324465A (ja) * | 2005-05-19 | 2006-11-30 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US7195934B2 (en) * | 2005-07-11 | 2007-03-27 | Applied Materials, Inc. | Method and system for deposition tuning in an epitaxial film growth apparatus |
KR100707166B1 (ko) * | 2005-10-12 | 2007-04-13 | 삼성코닝 주식회사 | GaN 기판의 제조방법 |
JP4915009B2 (ja) * | 2006-01-10 | 2012-04-11 | 国立大学法人山口大学 | 半導体部材の製造方法 |
JP4879614B2 (ja) * | 2006-03-13 | 2012-02-22 | 住友化学株式会社 | 3−5族窒化物半導体基板の製造方法 |
US7364991B2 (en) * | 2006-04-27 | 2008-04-29 | Applied Materials, Inc. | Buffer-layer treatment of MOCVD-grown nitride structures |
US7585769B2 (en) * | 2006-05-05 | 2009-09-08 | Applied Materials, Inc. | Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE |
US20080050889A1 (en) * | 2006-08-24 | 2008-02-28 | Applied Materials, Inc. | Hotwall reactor and method for reducing particle formation in GaN MOCVD |
US7769066B2 (en) * | 2006-11-15 | 2010-08-03 | Cree, Inc. | Laser diode and method for fabricating same |
US7582515B2 (en) * | 2007-01-18 | 2009-09-01 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
JP2008263023A (ja) * | 2007-04-11 | 2008-10-30 | Sumitomo Electric Ind Ltd | Iii−v族化合物半導体の製造方法、ショットキーバリアダイオード、発光ダイオード、レーザダイオード、およびそれらの製造方法 |
JP2008270401A (ja) * | 2007-04-18 | 2008-11-06 | Sumitomo Chemical Co Ltd | Al系III族窒化物結晶の製造方法 |
US20080314311A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Hvpe showerhead design |
EP2017884A3 (en) * | 2007-07-20 | 2011-03-23 | Gallium Enterprises Pty Ltd | Buried contact devices for nitride-based films and manufacture thereof |
KR100888440B1 (ko) * | 2007-11-23 | 2009-03-11 | 삼성전기주식회사 | 수직구조 발광다이오드 소자의 제조방법 |
US20090194026A1 (en) * | 2008-01-31 | 2009-08-06 | Burrows Brian H | Processing system for fabricating compound nitride semiconductor devices |
CA2653581A1 (en) * | 2009-02-11 | 2010-08-11 | Kenneth Scott Alexander Butcher | Migration and plasma enhanced chemical vapour deposition |
-
2008
- 2008-10-02 US US12/244,440 patent/US20090149008A1/en not_active Abandoned
- 2008-10-03 JP JP2010528152A patent/JP5036012B2/ja not_active Expired - Fee Related
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KR101232800B1 (ko) | 2013-02-13 |
CN102560633B (zh) | 2015-11-25 |
CN101831694A (zh) | 2010-09-15 |
TW200926265A (en) | 2009-06-16 |
KR20100077008A (ko) | 2010-07-06 |
CN101409233A (zh) | 2009-04-15 |
CN101831694B (zh) | 2014-09-24 |
JP2010541290A (ja) | 2010-12-24 |
CN102560633A (zh) | 2012-07-11 |
TWI421912B (zh) | 2014-01-01 |
US20090149008A1 (en) | 2009-06-11 |
WO2009046261A1 (en) | 2009-04-09 |
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