JP5026113B2 - 半導体装置の製造方法。 - Google Patents
半導体装置の製造方法。Info
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- JP5026113B2 JP5026113B2 JP2007058922A JP2007058922A JP5026113B2 JP 5026113 B2 JP5026113 B2 JP 5026113B2 JP 2007058922 A JP2007058922 A JP 2007058922A JP 2007058922 A JP2007058922 A JP 2007058922A JP 5026113 B2 JP5026113 B2 JP 5026113B2
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- 239000004065 semiconductor Substances 0.000 title claims description 117
- 238000000034 method Methods 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000011347 resin Substances 0.000 claims description 26
- 229920005989 resin Polymers 0.000 claims description 26
- 238000007789 sealing Methods 0.000 claims description 17
- 238000005520 cutting process Methods 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 5
- 239000002390 adhesive tape Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 18
- 238000003825 pressing Methods 0.000 description 9
- 238000002161 passivation Methods 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000007613 environmental effect Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000007665 sagging Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/744—Apparatus for manufacturing strap connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L2224/744—Apparatus for manufacturing strap connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
どちらにしても共通の環境負荷の問題があり、以下に述べる。
当然、この樹脂の分が余分であるし、ここの部分には、流動性を維持するために、熱も加わり、電力も消費する事になる。
本発明の半導体装置の製造方法は、拡散領域により素子が作りこまれ、前記素子と電気的に接続されたボンディング電極が表面に設けられた半導体チップと、前記半導体チップの前記ボンディング電極に固着される第1の領域と、前記第1の領域から前記半導体チップの側面近傍に延在する延在部と前記延在部から前記半導体チップの裏面と同一面となる第2の領域を有する板状リードとを用意する工程と、前記板状リードを前記ボンディング電極に固着する工程と、前記板状リードの第2の領域を封止容器の開口部に当接させて、前記半導体チップを前記封止容器に入れる工程と、前記開口部から樹脂を注入して封止部を形成する工程と、を具備し、前記半導体チップは、板状のアイランドリードに固着され、前記アイランドリードおよび前記第2の領域に対応する板状リードが前記封止部から露出することを特徴とした。
そして第2の搬送装置に設けられた凹部に装着される。矢印で示す搬送の先には、注入装置106があり、凹部に樹脂が注入される。
2 :半導体素子
5 :板状リード
10:基板
11:導電パターン
20:巻き取られた板状リード
22:プレス台
23:プレスカット
42:ワイヤ
43:押圧手段
44:カット手段
Claims (6)
- 拡散領域により素子が作りこまれ、前記素子と電気的に接続されたボンディング電極が表面に設けられた半導体チップと、前記半導体チップの前記ボンディング電極に固着される第1の領域と、前記第1の領域から前記半導体チップの側面近傍に延在する延在部と前記延在部から前記半導体チップの裏面と同一面となる第2の領域を有する板状リードとを用意する工程と、
前記板状リードを前記ボンディング電極に固着する工程と、
前記板状リードの第2の領域を封止容器の開口部に当接させて、前記半導体チップを前記封止容器に入れる工程と、
前記開口部から樹脂を注入して封止部を形成する工程と、を具備し、
前記半導体チップの裏面を前記封止部から露出させることを特徴とした半導体装置の製造方法。 - 拡散領域により素子が作りこまれ、前記素子と電気的に接続されたボンディング電極が表面に設けられた半導体チップと、前記半導体チップの前記ボンディング電極に固着される第1の領域と、前記第1の領域から前記半導体チップの側面近傍に延在する延在部と前記延在部から前記半導体チップの裏面と同一面となる第2の領域を有する板状リードとを用意する工程と、
前記板状リードを前記ボンディング電極に固着する工程と、
前記板状リードの第2の領域を封止容器の開口部に当接させて、前記半導体チップを前記封止容器に入れる工程と、
前記開口部から樹脂を注入して封止部を形成する工程と、を具備し、
前記半導体チップは、板状のアイランドリードに固着され、前記アイランドリードおよび前記第2の領域に対応する板状リードが前記封止部から露出することを特徴とした半導体装置の製造方法。 - 前記板状リードは、板状のワイヤの両端が切断され、前記半導体チップに設けられることを特徴とする請求項1または請求項2に記載の半導体装置の製造方法。
- 前記板状リードは、断面が円の形状のワイヤが板状につぶされて成り、前記対向する切断面と角部を成す側面は、湾曲されていることを特徴とする請求項1から請求項3の何れかに記載の半導体装置の製造方法。
- 前記板状リードの両端に形成されるバリ面が、上に向いて前記半導体チップに設けられることを特徴とする請求項1から請求項4の何れかに記載の半導体装置の製造方法。
- 前記板状リードは、複数本設けられ、前記複数本の板状リードは、粘着性のテープにより支持されていることを特徴とする請求項1から請求項5の何れかに記載の半導体装置の製造方法。
Priority Applications (1)
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JP2007058922A JP5026113B2 (ja) | 2007-03-08 | 2007-03-08 | 半導体装置の製造方法。 |
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JP2007058922A JP5026113B2 (ja) | 2007-03-08 | 2007-03-08 | 半導体装置の製造方法。 |
Publications (3)
Publication Number | Publication Date |
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JP2008226913A JP2008226913A (ja) | 2008-09-25 |
JP2008226913A5 JP2008226913A5 (ja) | 2010-04-15 |
JP5026113B2 true JP5026113B2 (ja) | 2012-09-12 |
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JP2007058922A Active JP5026113B2 (ja) | 2007-03-08 | 2007-03-08 | 半導体装置の製造方法。 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5996873B2 (ja) * | 2012-01-19 | 2016-09-21 | 新電元工業株式会社 | 半導体装置の製造方法、半導体装置及び接続子 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6313795A (ja) * | 1986-07-04 | 1988-01-21 | 株式会社日立製作所 | カ−ド状電子装置 |
JP2875591B2 (ja) * | 1990-05-29 | 1999-03-31 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
JPH05291546A (ja) * | 1992-04-08 | 1993-11-05 | Sanyo Electric Co Ltd | 固体撮像素子の製造方法 |
JPH08125154A (ja) * | 1994-10-24 | 1996-05-17 | Olympus Optical Co Ltd | 半導体装置の製造方法 |
JP2620685B2 (ja) * | 1996-03-22 | 1997-06-18 | 三洋電機株式会社 | 固体撮像素子の製造方法 |
JP5026112B2 (ja) * | 2007-03-08 | 2012-09-12 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置の製造方法。 |
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