JP5024858B2 - Piezoelectric actuator - Google Patents

Piezoelectric actuator Download PDF

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JP5024858B2
JP5024858B2 JP2006161416A JP2006161416A JP5024858B2 JP 5024858 B2 JP5024858 B2 JP 5024858B2 JP 2006161416 A JP2006161416 A JP 2006161416A JP 2006161416 A JP2006161416 A JP 2006161416A JP 5024858 B2 JP5024858 B2 JP 5024858B2
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piezoelectric
piezoelectric actuator
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祥広 川上
周二 相澤
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Tokin Corp
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NEC Tokin Corp
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Description

本発明は、圧電アクチュエータに関し、特に、ＰＮＮ−ＰＺＴ系の圧電膜を有する圧電アクチュエータに関する。   The present invention relates to a piezoelectric actuator, and more particularly to a piezoelectric actuator having a PNN-PZT type piezoelectric film.

ステンレスなどの安価な金属基板上に圧電膜を形成し、圧電アクチュエータを構成しようとする例としては、例えば、ＰＺＴ系材料からなる圧電膜を備えた特許文献１に開示されたものがある。   An example of forming a piezoelectric actuator by forming a piezoelectric film on an inexpensive metal substrate such as stainless steel is disclosed in Patent Document 1 including a piezoelectric film made of a PZT material.

特開２００６−９３３４６号公報JP 2006-93346 A

本発明は、特許文献１よりも更に良好な圧電特性を有する圧電膜を備えた圧電アクチュエータを提供することを目的とする。   An object of the present invention is to provide a piezoelectric actuator provided with a piezoelectric film having even better piezoelectric characteristics than Patent Document 1.

圧電特性の優れた材料としてＰＮＮ−ＰＺＴ系材料がある。しかし、本発明者らが試作・検証してみたところ、圧電性を示さないものや信頼性に欠けるものがあった。そこで、本発明者らは、更に検討を重ねた結果、ＰＮＮ−ＰＺＴ系材料からなる圧電膜の中から良好な圧電性を有し且つ信頼性の高いものを選択するためのパラメータとして、圧電膜を構成する結晶の平均粒径が適切であることを見出した。   There is a PNN-PZT material as a material having excellent piezoelectric characteristics. However, as a result of trial production and verification by the present inventors, there were some that did not show piezoelectricity and lacked reliability. As a result of further investigations, the present inventors have determined that a piezoelectric film as a parameter for selecting a piezoelectric film having good piezoelectricity and high reliability from piezoelectric films made of PNN-PZT materials. It has been found that the average particle size of the crystals constituting the is appropriate.

本発明はかかる知見に基づくものであり、より具体的には、本発明によれば、基板、該基板上に形成された第１電極、該第１電極上に形成された圧電膜、及び該圧電膜上に形成された第２電極を備える圧電アクチュエータであって、
前記圧電膜は、Ｐｂ（Ｎｉ１／３Ｎｂ２／３）Ｏ３−ＰｂＺｒＯ３−ＰｂＴｉＯ３系材料で構成され、０．２μｍ〜２．０μｍの平均粒径を有する結晶からなる
圧電アクチュエータが得られる。 The present invention is based on such knowledge. More specifically, according to the present invention, the substrate, the first electrode formed on the substrate, the piezoelectric film formed on the first electrode, and the A piezoelectric actuator comprising a second electrode formed on a piezoelectric film,
The piezoelectric film is made of a Pb (Ni 1/3 Nb 2/3 ) O 3 —PbZrO 3 —PbTiO 3 material, and a piezoelectric actuator made of a crystal having an average particle diameter of 0.2 μm to 2.0 μm is obtained. It is done.

Ｐｂ（Ｎｉ１／３Ｎｂ２／３）Ｏ３−ＰｂＺｒＯ３−ＰｂＴｉＯ３系材料で構成され、０．２μｍ〜２．０μｍの平均粒径を有する結晶からなる圧電膜を用いると、良好な圧電特性を有し且つ高い信頼性を有する圧電アクチュエータを得ることができる。 When a piezoelectric film composed of a Pb (Ni 1/3 Nb 2/3 ) O 3 —PbZrO 3 —PbTiO 3 based material and made of a crystal having an average particle diameter of 0.2 μm to 2.0 μm is used, a good piezoelectric property is obtained. A piezoelectric actuator having characteristics and high reliability can be obtained.

図１に示されるように、本発明の実施の形態による圧電アクチュエータ１００は、基板１０、基板１０上に形成された拡散バリア層２０、拡散バリア層２０上に形成された第１電極３０、第１電極３０上に形成された圧電膜４０、及び圧電膜４０上に形成された第２電極５０を備えている。   As shown in FIG. 1, a piezoelectric actuator 100 according to an embodiment of the present invention includes a substrate 10, a diffusion barrier layer 20 formed on the substrate 10, a first electrode 30 formed on the diffusion barrier layer 20, a first electrode A piezoelectric film 40 formed on one electrode 30 and a second electrode 50 formed on the piezoelectric film 40 are provided.

本実施の形態における基板１０は、ステンレスからなる。基板１０としては、ステンレスに代えて、他の金属材料を用いても良いし、シリコン単結晶などの半導体単結晶やセラミックなどで構成しても良い。   The substrate 10 in the present embodiment is made of stainless steel. As the substrate 10, instead of stainless steel, other metal materials may be used, or a semiconductor single crystal such as a silicon single crystal, a ceramic, or the like may be used.

本実施の形態における拡散バリア層２０は、基板１０上に直接成膜されたＡｌ２Ｏ３皮膜からなる。拡散バリア層２０としては、Ａｌ２Ｏ３皮膜に代えて、ＺｒＯ２やＭｇＯなどの他の酸化物や窒化物からなる皮膜を用いても良い。なお、この拡散バリア層２０は、圧電膜を構成する結晶の粒成長のための熱処理の際に基板１０と圧電膜４０との反応を防ぐためのものであるので、本実施の形態のようにステンレスからなる基板１０の場合には設けることが好ましいが、例えば、基板１０がセラミックなどからなる場合には、省略することができる。 The diffusion barrier layer 20 in the present embodiment is made of an Al 2 O 3 film directly formed on the substrate 10. The diffusion barrier layer 20, in place of the Al 2 O 3 film may be used a film made of other oxides and nitrides such ZrO2 and MgO. Since this diffusion barrier layer 20 is for preventing the reaction between the substrate 10 and the piezoelectric film 40 during the heat treatment for crystal grain growth constituting the piezoelectric film, as in the present embodiment. In the case of the substrate 10 made of stainless steel, it is preferably provided. However, for example, when the substrate 10 is made of ceramic or the like, it can be omitted.

本実施の形態における第１電極３０は、拡散バリア層２０上にスパッタ法で形成されたＰｔ膜からなる。第１電極３０の形成は、他の方法によっても良いし、第１電極３０はＰｔ以外の貴金属、例えば、Ｉｒなどを用いて形成しても良い。熱処理時に酸素分圧を制御することを前提として、第１電極３０の材料として、ＣｕやＮｉなどの卑金属を用いても良い。更には、本実施の形態のように金属からなる基板を用いる場合、基板と第１電極とを兼ねることとしても良い。   The first electrode 30 in the present embodiment is made of a Pt film formed on the diffusion barrier layer 20 by sputtering. The first electrode 30 may be formed by other methods, and the first electrode 30 may be formed using a noble metal other than Pt, such as Ir. Assuming that the oxygen partial pressure is controlled during the heat treatment, a base metal such as Cu or Ni may be used as the material of the first electrode 30. Furthermore, when a metal substrate is used as in the present embodiment, the substrate and the first electrode may be combined.

本実施の形態における圧電膜４０は、Ｐｂ（Ｎｉ１／３Ｎｂ２／３）Ｏ３−ＰｂＺｒＯ３−ＰｂＴｉＯ３系材料で構成され、０．２５μｍの平均粒径を有する結晶からなる。平均粒径は、０．２μｍ〜２．０μｍの範囲に入っていれば良い。本発明者らによる検証の結果、平均粒径が０．２μｍに満たない場合には、圧電性を示さず、変位特性が極端に低いことが確認され、また、平均粒径が２．０μｍよりも大きい場合には、圧電膜に電気的異方性を与える分極処理工程でクラックが発生する確率が高く、また連続駆動により変位が低下することが確認されたためである。更に、良好な耐電圧特性を得るためには、平均粒径が０．２μｍ〜０．５μｍの範囲に入っていることが好ましい。 The piezoelectric film 40 in the present embodiment is made of a Pb (Ni 1/3 Nb 2/3 ) O 3 —PbZrO 3 —PbTiO 3 based material and made of crystals having an average particle diameter of 0.25 μm. The average particle diameter should just be in the range of 0.2 micrometer-2.0 micrometers. As a result of verification by the present inventors, when the average particle diameter is less than 0.2 μm, it is confirmed that the piezoelectricity is not exhibited and the displacement characteristics are extremely low, and the average particle diameter is from 2.0 μm. This is because it has been confirmed that the probability of cracking is high in the polarization treatment step for imparting electrical anisotropy to the piezoelectric film, and that the displacement is reduced by continuous driving. Furthermore, in order to obtain good withstand voltage characteristics, it is preferable that the average particle diameter is in the range of 0.2 μm to 0.5 μm.

なお、圧電膜４０を構成する結晶の平均粒径は、下記文献に基づき、膜の表面、もしくは断面のＳＥＭ写真より結晶粒が１００ヶ以上クロスするように線を引き、その線の長さから粒１ヶ当たりの長さの平均値を計算し、結晶粒が球であると仮定し、補正係数１．５を乗じた値を結晶粒径とした。
参考文献：「セラミックプロセシング」
水谷惟恭他著、１９８５年３月技報堂出版発行 The average grain size of the crystals constituting the piezoelectric film 40 is based on the following literature, and a line is drawn from the SEM photograph of the film surface or cross section so that more than 100 crystal grains cross, The average value of the length per grain was calculated, the crystal grain was assumed to be a sphere, and the value multiplied by the correction factor of 1.5 was taken as the crystal grain size.
Reference: “Ceramic Processing”
Published by Jun Mizutani et al., March 1985

また、本実施の形態における圧電膜４０は、Ｐｂ（Ｎｉ１／３Ｎｂ２／３）Ｏ３を５０モル％、ＰｂＺｒＯ３を１５モル％、ＰｂＴｉＯ３を３５モル％としたＰｂ（Ｎｉ１／３Ｎｂ２／３）Ｏ３−ＰｂＺｒＯ３−ＰｂＴｉＯ３材料からなるものである。組成としては、Ｐｂ（Ｎｉ１／３Ｎｂ２／３）Ｏ３をｘモル％、ＰｂＺｒＯ３をｙモル％、ＰｂＴｉＯ３系をｚモル％とした場合（但し、ｘ＋ｙ＋ｚ＝１００）に、図２に示されるような三成分系相図において、
Ａ（ｘ＝５５，ｙ＝ ５，ｚ＝４０）
Ｂ（ｘ＝５５，ｙ＝１５，ｚ＝３０）
Ｃ（ｘ＝２０，ｙ＝４５，ｚ＝３５）
Ｄ（ｘ＝２０，ｙ＝３５，ｚ＝４５）
の４点を頂点とした四角形領域内に存在する組成を有することが好ましい。この四角形領域内に含まれる組成を有する圧電膜４０の場合、圧電定数の絶対値｜ｄ３１｜として１００ｐｍ／Ｖ以上の値を得られるからである。 In addition, the piezoelectric film 40 in the present embodiment is made of Pb (Ni 1 / N 1/3 Nb 2/3 ) O 3 containing 50 mol%, PbZrO 3 15 mol%, and PbTiO 3 35 mol%. 3 Nb 2/3 ) O 3 —PbZrO 3 —PbTiO 3 material. As the composition, when Pb (Ni 1/3 Nb 2/3 ) O 3 is x mol%, PbZrO 3 is y mol%, and PbTiO 3 system is z mol% (where x + y + z = 100), FIG. In the ternary phase diagram as shown in
A (x = 55, y = 5, z = 40)
B (x = 55, y = 15, z = 30)
C (x = 20, y = 45, z = 35)
D (x = 20, y = 35, z = 45)
It is preferable to have a composition that exists in a quadrangular region having the four points of the above. This is because, in the case of the piezoelectric film 40 having a composition included in this rectangular region, a value of 100 pm / V or more can be obtained as the absolute value | d 31 | of the piezoelectric constant.

なお、特性向上その他の目的で、Ｐｂ（Ｎｉ１／３Ｎｂ２／３）Ｏ３−ＰｂＺｒＯ３−ＰｂＴｉＯ３におけるＰｂを、３％以下に限り、Ｓｒや希土類元素で置換しても良い。また、Ｐｂ（Ｎｉ１／３Ｎｂ２／３）Ｏ３−ＰｂＺｒＯ３−ＰｂＴｉＯ３に対してＭｎＯ又はＦｅ２Ｏ３を０．０５〜０．５％添加しても良い。 For the purpose of improving characteristics and other purposes, Pb in Pb (Ni 1/3 Nb 2/3 ) O 3 —PbZrO 3 —PbTiO 3 may be replaced with Sr or rare earth elements as long as it is 3% or less. Further, 0.05 to 0.5% of MnO or Fe2O3 may be added to Pb (Ni 1/3 Nb 2/3 ) O 3 —PbZrO 3 —PbTiO 3 .

本実施の形態における圧電膜４０の膜厚は、１０μｍとした。圧電膜４０の膜厚は、１０μｍよりも厚くても薄くても構わないが、アクチュエータに要求される発生力を得るためには５μｍ以上であることが好ましい。また、同様の理由により、膜密度は、相対密度で９０％以上であることが望ましい。   The film thickness of the piezoelectric film 40 in the present embodiment is 10 μm. The film thickness of the piezoelectric film 40 may be thicker or thinner than 10 μm, but is preferably 5 μm or more in order to obtain the generated force required for the actuator. For the same reason, the film density is preferably 90% or more in terms of relative density.

上述してきた本発明の形態による圧電膜４０を実際に形成するにあたって、まずは、第１電極３０まで形成された基板１０をイソプロピルアルコール中で超音波洗浄した。その後、５０Ｐｂ（Ｎｉ１／３Ｎｂ２／３）Ｏ３−１５ＰｂＺｒＯ３−３５ＰｂＴｉＯ３組成のセラミック粉末を用いてエアロゾルデポジション（ＡＤ）法により圧電膜４０を第１電極３０上に形成した。ＡＤ法に用いる粉末の比表面積は１〜４ｍ２／ｇであることが好ましい。また、成膜時の温度に関し、室温で成膜しても良いし、基板を加熱した状態で成膜しても良い。 In actually forming the piezoelectric film 40 according to the embodiment of the present invention described above, first, the substrate 10 formed up to the first electrode 30 was ultrasonically cleaned in isopropyl alcohol. Thereafter, the piezoelectric film 40 was formed on the first electrode 30 by an aerosol deposition (AD) method using ceramic powder having a composition of 50 Pb (Ni 1/3 Nb 2/3 ) O 3 -15PbZrO 3 -35PbTiO 3 . It is preferable that the specific surface area of the powder used for AD method is 1-4 m < 2 > / g. Regarding the temperature at the time of film formation, the film formation may be performed at room temperature or may be performed while the substrate is heated.

ＡＤ法により圧電膜を成膜した後、圧電膜を構成する結晶の粒径を成長させるため熱処理を行った。熱処理温度が低すぎると粒径が小さくなり、高すぎると大きくなりすぎるので、適切な温度範囲を選択すべきである。本実施の形態においては、９００℃で熱処理を行った。温度範囲は熱処理前の結晶等との関係を考慮して定められるべきものであるが、８５０〜９００℃の範囲であれば、ほぼ確実に、平均粒径を０．２μｍ〜０．５μｍの範囲内に収めることができる。   After forming the piezoelectric film by the AD method, heat treatment was performed in order to grow the grain size of the crystals constituting the piezoelectric film. If the heat treatment temperature is too low, the particle size becomes small, and if it is too high, it becomes too large, so an appropriate temperature range should be selected. In this embodiment mode, heat treatment is performed at 900 ° C. The temperature range should be determined in consideration of the relationship with the crystal before heat treatment, etc., but if it is in the range of 850 to 900 ° C., the average particle diameter is in the range of 0.2 μm to 0.5 μm almost certainly. Can fit inside.

本実施の形態における第２電極５０は、圧電膜４０上に蒸着されたＡｕからなる。第１電極３０同様、他の貴金属等から構成されていても良い。   The second electrode 50 in the present embodiment is made of Au deposited on the piezoelectric film 40. Like the 1st electrode 30, you may be comprised from other noble metals.

第２電極５０形成後、圧電膜４０に対して、１００℃で４０ｋＶ／ｃｍの電界を１５分間印加して分極処理を施した。   After forming the second electrode 50, the piezoelectric film 40 was subjected to polarization treatment by applying an electric field of 40 kV / cm at 100 ° C. for 15 minutes.

以下、図３及び図４を用いて、本実施の形態による圧電アクチュエータ１００と平均粒径が０．２μｍ〜０．５μｍの範囲外にある結晶からなる圧電膜を備えた圧電アクチュエータとの比較した結果について説明する。比較例としては、熱処理温度だけを異ならせて、上述した本実施の形態による圧電アクチュエータ１００と同様の手法により作成されたものを２種類用意した。一つは、８００℃で熱処理したものであり、結晶粒径が０．１８μｍを有するものである。他方は、１０５０℃で熱処理したものであり、結晶粒径が２．２μｍを有するものである。図３を参照すると、前者について、変位特性測定試験を行った結果が示されている。変位特性測定試験（圧電定数測定試験）は、図１におけるＰ１点、Ｐ２点を保持した片持ち梁状態で、Ｐ３点及びＰ４点に０Ｖ〜５０Ｖの電圧を印加しつつＰ５点の変位をレーザ変位系で測定することにより行われた。なお、後者についても同様の測定を試みたが、後者の圧電膜では分極処理時にクラックが発生し、評価することができなかった。一方、本実施の形態に対して、同様の測定を行って得られた結果が図４である。 Hereinafter, using FIG. 3 and FIG. 4, the piezoelectric actuator 100 according to the present embodiment is compared with a piezoelectric actuator having a piezoelectric film made of crystals whose average particle diameter is outside the range of 0.2 μm to 0.5 μm. The results will be described. As comparative examples, two types prepared by the same method as the piezoelectric actuator 100 according to the present embodiment described above were prepared by changing only the heat treatment temperature. One is heat-treated at 800 ° C. and has a crystal grain size of 0.18 μm. The other is heat-treated at 1050 ° C. and has a crystal grain size of 2.2 μm. Referring to FIG. 3, the result of a displacement characteristic measurement test for the former is shown. Displacement characteristic measurement test (piezoelectric constant measurement test) is, P 1 point in FIG. 1, in a cantilever while holding the P 2 points, P 5 while applying a voltage of 0V~50V three points and P 4 point P This was done by measuring the point displacement with a laser displacement system. Although the same measurement was attempted for the latter, the latter piezoelectric film was cracked during polarization treatment and could not be evaluated. On the other hand, FIG. 4 shows a result obtained by performing the same measurement on the present embodiment.

図３を一見して理解されるように、平均粒径が０．１８μｍの場合、電圧に対する変位変化が二次曲線状になっており、強誘電性を示していないが、平均粒径が０．２５μｍの場合、分極反転を伴う変位特性が得られた。   As can be seen from a glance at FIG. 3, when the average particle size is 0.18 μm, the displacement change with respect to the voltage has a quadratic curve shape and does not show ferroelectricity, but the average particle size is 0. In the case of .25 μm, a displacement characteristic accompanied with polarization inversion was obtained.

更に、片持ち梁状の圧電アクチュエータに対して電圧を１０９回印加して耐久試験（連続駆動試験）も行った。その結果、平均粒径が０．２μｍ〜０．５μｍの結晶からなる圧電膜の場合、信頼性に優れた特性を示すことが確認された。 Further, the durability test (continuous driving test) by applying a voltage of 10 9 times for cantilevered piezoelectric actuator also performed. As a result, it was confirmed that a piezoelectric film made of crystals having an average particle diameter of 0.2 μm to 0.5 μm exhibits excellent reliability.

これらの比較結果を含めた上述した実施の形態から理解されるように、本発明によれば、良好な圧電性を有し且つ信頼性の高い圧電膜を有する圧電アクチュエータが得られる。   As can be understood from the above-described embodiments including these comparison results, according to the present invention, a piezoelectric actuator having a piezoelectric film having good piezoelectricity and high reliability can be obtained.

本発明の圧電アクチュエータは、超音波モータやＨＤＤにおける位置決め素子や、インクジェットヘッド、スピーカなどに利用することができる。   The piezoelectric actuator of the present invention can be used for positioning elements in ultrasonic motors and HDDs, inkjet heads, speakers, and the like.

本発明の実施の形態による圧電アクチュエータに用いられた圧電膜の組成範囲を示す三成分系相図である。It is a ternary phase diagram showing the composition range of the piezoelectric film used in the piezoelectric actuator according to the embodiment of the present invention. 本発明の実施の形態による圧電アクチュエータを示す断面図である。It is sectional drawing which shows the piezoelectric actuator by embodiment of this invention. 比較例の特性を示す図である。It is a figure which shows the characteristic of a comparative example. 本発明の実施の形態による圧電アクチュエータの特性を示す図である。It is a figure which shows the characteristic of the piezoelectric actuator by embodiment of this invention.

符号の説明Explanation of symbols

１０ 基板
２０ 拡散バリア層
３０ 第１電極
４０ 圧電膜
５０ 第２電極
１００ 圧電アクチュエータ。
DESCRIPTION OF SYMBOLS 10 Board | substrate 20 Diffusion barrier layer 30 1st electrode 40 Piezoelectric film 50 2nd electrode 100 Piezoelectric actuator.

Claims (13)

基板、該基板上に形成された第１電極、該第１電極上に形成された圧電膜、及び該圧電膜上に形成された第２電極を備える圧電アクチュエータであって、
前記圧電膜は、Ｐｂ（Ｎｉ１／３Ｎｂ２／３）Ｏ３−ＰｂＺｒＯ３−ＰｂＴｉＯ３系材料で構成され、０．２μｍ〜０．５μｍの平均粒径を有する結晶からなる
圧電アクチュエータ。 A piezoelectric actuator comprising a substrate, a first electrode formed on the substrate, a piezoelectric film formed on the first electrode, and a second electrode formed on the piezoelectric film,
The piezoelectric film is a piezoelectric actuator made of a crystal made of a Pb (Ni 1/3 Nb 2/3 ) O 3 —PbZrO 3 —PbTiO 3 based material and having an average grain size of 0.2 μm to 0.5 μm . 前記圧電膜は、Ｐｂ（Ｎｉ１／３Ｎｂ２／３）Ｏ３をｘモル％、ＰｂＺｒＯ３をｙモル％、ＰｂＴｉＯ３系をｚモル％とした場合（但し、ｘ＋ｙ＋ｚ＝１００）に、三成分系相図において、
Ａ（ｘ＝５５，ｙ＝ ５，ｚ＝４０）
Ｂ（ｘ＝５５，ｙ＝１５，ｚ＝３０）
Ｃ（ｘ＝２０，ｙ＝４５，ｚ＝３５）
Ｄ（ｘ＝２０，ｙ＝３５，ｚ＝４５）
の４点を頂点とした四角形領域内に存在する組成を有する
請求項１記載の圧電アクチュエータ。 The piezoelectric film has three components when Pb (Ni 1/3 Nb 2/3 ) O 3 is x mol%, PbZrO 3 is y mol%, and PbTiO 3 system is z mol% (where x + y + z = 100). In the component phase diagram,
A (x = 55, y = 5, z = 40)
B (x = 55, y = 15, z = 30)
C (x = 20, y = 45, z = 35)
D (x = 20, y = 35, z = 45)
It has a composition that exists in a quadrangular region with the four points of
The piezoelectric actuator according to claim 1 . 前記基板は、金属からなる、請求項１又は請求項２記載の圧電アクチュエータ。 The piezoelectric actuator according to claim 1, wherein the substrate is made of metal. 前記基板は、ステンレスからなる、請求項３記載の圧電アクチュエータ。 The piezoelectric actuator according to claim 3 , wherein the substrate is made of stainless steel. 前記基板は、半導体単結晶からなる、請求項１又は請求項２記載の圧電アクチュエータ。 The piezoelectric actuator according to claim 1, wherein the substrate is made of a semiconductor single crystal. 前記基板と前記圧電膜との間に前記基板と前記圧電膜との反応を防止するための拡散バリア層を更に備える、請求項１乃至請求項５のいずれかに記載の圧電アクチュエータ。 The piezoelectric actuator according to any one of claims 1 to 5 , further comprising a diffusion barrier layer for preventing a reaction between the substrate and the piezoelectric film between the substrate and the piezoelectric film. 前記拡散バリア層は、前記基板表面に形成された酸化物層又は窒化物層である、請求項６記載の圧電アクチュエータ。 The piezoelectric actuator according to claim 6 , wherein the diffusion barrier layer is an oxide layer or a nitride layer formed on the substrate surface. 前記圧電膜において３％以下のＰｂをＳｒ又は希土類元素で置換してなる、請求項１乃至請求項７のいずれかに記載の圧電アクチュエータ。 The piezoelectric actuator according to any one of claims 1 to 7 , wherein 3% or less of Pb is substituted with Sr or a rare earth element in the piezoelectric film. 前記圧電膜に対して、ＭｎＯ又はＦｅ２Ｏ３を０．０５〜０．５％添加してなる、請求項１乃至請求項８のいずれかに記載の圧電アクチュエータ。 Wherein the piezoelectric film, formed by addition of MnO or Fe 2 O 3 0.05~0.5%, the piezoelectric actuator according to any one of claims 1 to 8. 前記圧電膜は、少なくとも５μｍの膜厚を有する、請求項１乃至請求項９のいずれかに記載の圧電アクチュエータ。 The piezoelectric actuator according to claim 1, wherein the piezoelectric film has a film thickness of at least 5 μm. 基板上に第１電極を形成するステップと、
Ｐｂ（Ｎｉ１／３Ｎｂ２／３）Ｏ３−ＰｂＺｒＯ３−ＰｂＴｉＯ３系粉末を材料としたエアロゾルデポジション法によりＰｂ（Ｎｉ１／３Ｎｂ２／３）Ｏ３−ＰｂＺｒＯ３−ＰｂＴｉＯ３系膜を前記第１電極上に形成した後、Ｐｂ（Ｎｉ１／３Ｎｂ２／３）Ｏ３−ＰｂＺｒＯ３−ＰｂＴｉＯ３系膜に対して熱処理を行って粒成長させることにより、０．２μｍ〜０．５μｍの平均粒径を有する結晶からなる圧電膜を前記第１電極上に形成するステップと、
該圧電膜上に第２電極を形成するステップと
を備える圧電アクチュエータの製造方法。 Forming a first electrode on a substrate;
Pb (Ni 1/3 Nb 2/3 ) O 3 —PbZrO 3 —PbTiO 3 system by aerosol deposition method using Pb (Ni 1/3 Nb 2/3 ) O 3 —PbZrO 3 —PbTiO 3 system powder as material After the film is formed on the first electrode, the Pb (Ni 1/3 Nb 2/3 ) O 3 —PbZrO 3 —PbTiO 3 system film is subjected to heat treatment to cause grain growth, whereby 0.2 μm to Forming a piezoelectric film made of crystals having an average grain size of 0.5 μm on the first electrode;
Forming a second electrode on the piezoelectric film. 前記エアロゾルデポジション法に用いる前記粉末の比表面積は１〜４ｍThe specific surface area of the powder used in the aerosol deposition method is 1 to 4 m. ２2 ／ｇである/ G
請求項１１記載の圧電アクチュエータの製造方法。The method for manufacturing a piezoelectric actuator according to claim 11. 前記熱処理の温度範囲は、８５０〜９００℃であるThe temperature range of the heat treatment is 850 to 900 ° C.
請求項１１又は請求項１２記載の圧電アクチュエータの製造方法。A method for manufacturing a piezoelectric actuator according to claim 11 or 12.
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