JP5011879B2 - Manufacturing method of semiconductor device and lead frame assembly - Google Patents
Manufacturing method of semiconductor device and lead frame assembly Download PDFInfo
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- JP5011879B2 JP5011879B2 JP2006217573A JP2006217573A JP5011879B2 JP 5011879 B2 JP5011879 B2 JP 5011879B2 JP 2006217573 A JP2006217573 A JP 2006217573A JP 2006217573 A JP2006217573 A JP 2006217573A JP 5011879 B2 JP5011879 B2 JP 5011879B2
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- lead
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- inner end
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- support plate
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- 239000004065 semiconductor Substances 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000007747 plating Methods 0.000 claims description 103
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 230000017525 heat dissipation Effects 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
Landscapes
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
本発明は、異なる金属製の接続部材により電子部品の複数の電極とリードとを接続して、接続部材とリードとの接着強度を改善できる半導体装置及びリードフレーム組立体の製法に関するものである。 The present invention relates to a method of manufacturing a semiconductor device and a lead frame assembly that can improve the adhesive strength between a connection member and a lead by connecting a plurality of electrodes and leads of an electronic component using different metal connection members.
リードフレームの支持板上に複数の半導体素子又は回路基板等の電子部品を搭載し、電子部品の複数の上面電極とリードフレームのリードとの間をリード細線等の接続部材によって電気的に接続するリードフレーム組立体は公知である。 A plurality of electronic components such as semiconductor elements or circuit boards are mounted on the support plate of the lead frame, and the plurality of upper surface electrodes of the electronic component and the leads of the lead frame are electrically connected by a connecting member such as a thin lead wire. Lead frame assemblies are known.
リードフレーム組立体を製造する際に、まず周知のプレス加工により銅板からリードフレームを一体に打ち抜き加工して、第１のメッキ層としてニッケルメッキがリードフレームの母材表面全体に施される。半田濡れ性の良好なニッケルによりリードフレームを被覆すると、電力用半導体素子等を半田により支持板の主面に強固に固着できると共に、プリント基板搭載時に半導体装置のリードを外部プリント基板に強固に固着することができる。また、電力用半導体素子等とリードとを接続する接続部材のうち、大電流容量を要するリード細線に線径の大きなアルミニウム細線を使用し、全方向にルーピングが必要なリード細線にボールボンディング接続可能な金細線が使用される。ニッケル等の耐食性と密着性に優れる金属材料でメッキ被覆される各リードの接続面に、アルミニウム等の金属から成るリード細線をワイヤボンディングによりリードに接続すれば、十分に大きい接続強度が得られる。また、リード細線を接続する位置を決める工程は、コンピュータが画像解析等により決定する場合が多い。 When manufacturing the lead frame assembly, first, the lead frame is integrally punched from a copper plate by a known press process, and nickel plating is applied to the entire base material surface of the lead frame as a first plating layer. When the lead frame is covered with nickel with good solder wettability, power semiconductor elements and the like can be firmly fixed to the main surface of the support plate with solder, and the lead of the semiconductor device is firmly fixed to the external printed circuit board when the printed circuit board is mounted. can do. Also, among the connecting members that connect power semiconductor elements and leads to lead wires that require large current capacity, aluminum wires with large wire diameter are used, and ball bonding can be connected to lead wires that require looping in all directions. Fine gold wires are used. A sufficiently large connection strength can be obtained by connecting a lead thin wire made of metal such as aluminum to the lead by wire bonding on the connection surface of each lead plated with a metal material excellent in corrosion resistance and adhesion such as nickel. In many cases, the computer determines the position for connecting the thin lead wires by image analysis or the like.
ところで、金等の異なる金属から成るリード細線をリードのニッケルメッキ層上にワイヤボンディングで接続すると、十分な接続強度が得られない場合があった。これは、ワイヤボンディング時に、リード上のニッケルメッキ層を構成するニッケルとリード細線を構成する金属とが反応して、金属間化合物を形成し、この金属間化合物が接続部（ボンディング部）の機械的強度を低下するためと考えられる。 By the way, when lead fine wires made of different metals such as gold are connected to the nickel plating layer of the lead by wire bonding, sufficient connection strength may not be obtained. This is because during wire bonding, nickel constituting the nickel plating layer on the lead reacts with the metal constituting the lead fine wire to form an intermetallic compound, and this intermetallic compound is the machine of the connection part (bonding part). This is considered to decrease the mechanical strength.
このような、ボンディング部の接続強度の低下を防止する半導体装置が提案されている。例えば、図４に示す半導体装置(111)は、支持板(101)と、支持板(101)の縁部側に並列に配置される５本のリード(104, 105)と、支持板(101)の主面(101a)に固着される電子部品としての電力用半導体素子(102)及び制御用半導体素子(103)と、各半導体素子(102, 103)の上面電極(102a, 103a)と各リード(104, 105)上に形成された金属メッキ層(120a, 120b)とをそれぞれ電気的に接続する材質及び形状の異なる第１並びに第２の接続部材(106, 107)と、支持板(101)の少なくとも一方の主面(101a)、各半導体素子(102, 103)、第１及び第２の接続部材(106, 107)、第１及び第２のリード(104, 105)の各内端部(104a, 105a)を封止する樹脂封止体(108)とを備える。 There has been proposed a semiconductor device that prevents such a decrease in the connection strength of the bonding portion. For example, a semiconductor device (111) shown in FIG. 4 includes a support plate (101), five leads (104, 105) arranged in parallel on the edge side of the support plate (101), and a support plate (101 ) Power semiconductor element (102) and control semiconductor element (103) as electronic components fixed to the main surface (101a) of each of the upper surface electrodes (102a, 103a) and each of the semiconductor elements (102, 103) First and second connecting members (106, 107) of different materials and shapes for electrically connecting the metal plating layers (120a, 120b) formed on the leads (104, 105), respectively, and a support plate ( 101) at least one main surface (101a), each semiconductor element (102, 103), each of first and second connecting members (106, 107), and each of first and second leads (104, 105) And a resin sealing body (108) for sealing the end portions (104a, 105a).
図４のＶ−Ｖ線部分断面図である図５に示すように、母材の表面全体にニッケルを主成分とする第１のメッキ層(120a)を施し、更に、第１及び第２のリード(104, 105)の各内端部(104a, 105a)の一部に、銀を主成分とする第２のメッキ層(120b)を積層して、第１及び第２のリード(104, 105)が形成される。また、電流用半導体素子(102)の上面電極(102a)と第１のリード(104)とは、第１のメッキ層(120a)を介してアルミニウム製の第１の接続部材(106)により接続される。そして、制御用半導体素子(103)の上面電極(103a)と第２のリード(105)の第２のメッキ層(120b)とを、金から成る第２の接続部材(107)により接続する。つまり、アルミニウムから成る第１の接続部材(106)が、内端部(104a)上のニッケルを主成分とする第１のメッキ層(120a)上にボンディングされ、金から成る第２の接続部材(107)が内端部(105a)上の銀を主成分とする第２のメッキ層(120b)上にボンディングされる。このため、異なる材質の各接続部材(106, 107)とリード(104, 105)との間に形成されるボンディング界面が強固となり、機械的な接続強度が向上する。 As shown in FIG. 5 which is a partial cross-sectional view taken along the line V-V of FIG. 4, a first plating layer (120a) containing nickel as a main component is applied to the entire surface of the base material. A second plating layer (120b) mainly composed of silver is laminated on a part of each inner end portion (104a, 105a) of the lead (104, 105), and the first and second leads (104, 105) are laminated. 105) is formed. Further, the upper electrode (102a) of the current semiconductor element (102) and the first lead (104) are connected by the first connecting member (106) made of aluminum via the first plating layer (120a). Is done. Then, the upper electrode (103a) of the control semiconductor element (103) and the second plating layer (120b) of the second lead (105) are connected by the second connecting member (107) made of gold. That is, the first connecting member (106) made of aluminum is bonded onto the first plating layer (120a) mainly composed of nickel on the inner end (104a), and the second connecting member made of gold. (107) is bonded on the second plating layer (120b) mainly composed of silver on the inner end (105a). For this reason, the bonding interface formed between the connection members (106, 107) and the leads (104, 105) made of different materials is strengthened, and the mechanical connection strength is improved.
この種の半導体装置は、例えば、本特許出願人による下記特許文献１に開示される。
しかしながら、図４及び図５に示す従来の半導体装置(111)では、異なる金属メッキである第１のメッキ層(120a)上に第２のメッキ層(120b)が積層して形成されるため、半導体装置(111)に大電流が流れる場合に、第１のメッキ層(120a)の表面上に第２のメッキ層(120b)の金属成分が広がる金属移動現象（マイグレーション）が発生し、第２のメッキ層(120b)を構成する金属が、第１の接続部材(106)を構成する金属と反応して合金化する現象が発生する。金属移動現象が発生すると、ボンディング界面を脆弱化し、第１のリード(104)と第１の接続部材(106)との接続強度が低下する欠点がある。 However, in the conventional semiconductor device (111) shown in FIGS. 4 and 5, since the second plating layer (120b) is formed on the first plating layer (120a) which is a different metal plating, When a large current flows through the semiconductor device (111), a metal movement phenomenon (migration) occurs in which the metal component of the second plating layer (120b) spreads on the surface of the first plating layer (120a). A phenomenon occurs in which the metal composing the plating layer (120b) reacts with the metal composing the first connecting member (106) to form an alloy. When the metal movement phenomenon occurs, there is a drawback that the bonding interface is weakened and the connection strength between the first lead (104) and the first connection member (106) is lowered.
更に、図示しないが、積層ではなく、第１のメッキ層(120a)と第２のメッキ層(120b)とをそれぞれ母材上に隣接して形成しても、マイグレーションが発生し、第１のリード(104)と第１の接続部材(106)との接続強度が低下する。 Further, although not shown, even if the first plating layer (120a) and the second plating layer (120b) are formed adjacent to each other on the base material instead of being stacked, migration occurs, The connection strength between the lead (104) and the first connection member (106) decreases.
また、各リード(104, 105)上にそれぞれ接続部材(106, 107)をボンディングする際の位置決め工程では、各リード(104, 105)上に単一のメッキ層のみを形成する従来の製法では、各リード(104, 105)の内端部(120)上のどこへでもボンディングしてよかった。しかし、単一のリード上に異なる複数の金属メッキ層を形成すると、リード(104, 105)上の特定のメッキ層(120a, 120b)に区別して各接続部材(106, 107)をボンディングする必要がある。それにより、各メッキ層(120a, 120b)の位置情報を制御コンピュータにより比較し区別しなければならず、高度な位置決め判別精度が要求される難点があった。このため、銀を主成分とする第２のメッキ層(120b)上にアルミニウムから成る第１の接続部材(106)をボンディングにより不適切な位置に接続して、接続不良になるおそれもあった。 Further, in the positioning process when bonding the connecting members (106, 107) on the respective leads (104, 105), the conventional manufacturing method in which only a single plating layer is formed on each lead (104, 105) is used. Bonding was possible anywhere on the inner end (120) of each lead (104, 105). However, if different metal plating layers are formed on a single lead, it is necessary to bond each connecting member (106, 107) separately to a specific plating layer (120a, 120b) on the lead (104, 105) There is. As a result, the position information of each plating layer (120a, 120b) must be compared and distinguished by a control computer, and there is a difficulty in requiring a high degree of positioning discrimination accuracy. For this reason, the first connecting member (106) made of aluminum is connected to an inappropriate position by bonding on the second plating layer (120b) containing silver as a main component, which may result in poor connection. .
そこで、本発明は、電子部品の複数の電極とリードとを接続する異なる金属製の接続部材とリードとの接着強度を改善できる半導体装置及びリードフレーム組立体の製法を提供することを目的とする。また、本発明は、従来使用されるリードフレームを用いて、異なる金属製の接続部材とリードとの接着強度を改善できる半導体装置及びリードフレーム組立体の製法を提供することを目的とする。 SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method of manufacturing a semiconductor device and a lead frame assembly that can improve the bonding strength between different metal connecting members and leads that connect a plurality of electrodes and leads of an electronic component. . Another object of the present invention is to provide a method of manufacturing a semiconductor device and a lead frame assembly that can improve the bonding strength between different metal connecting members and leads using a conventionally used lead frame.
本発明の半導体装置は、導電性及び放熱性を有する支持板(1)と、支持板(1)の一方の主面(1a)上に互いに離間して固着された第１の電子部品(2)及び第２の電子部品(3)と、支持板(1)から離間して配置された内端部(4a)及び内端部(4a)の表面に形成された第１のメッキ層(20a)を有する第１のリード(4)と、それぞれ支持板(1)から離間して配置された各内端部(5a)、内端部(5a)の表面に形成された第１のメッキ層(20a)及び第１のメッキ層(20a)の表面に形成された第２のメッキ層(20b)を有する第２のリード(5)と、第１のメッキ層(20a)を介して第１のリード(4)の内端部(4a)と第１の電子部品(2)とを電気的に接続する金属製の第１の接続部材(6)と、第１のメッキ層(20a)及び第２のメッキ層(20b)を介して第２のリード(5)の内端部(5a)と第２の電子部品(3)とを電気的に接続する金属製の第２の接続部材(7)と、支持板(1)の少なくとも一方の主面(1a)、第１の電子部品(2)、第２の電子部品(3)、第１の接続部材(6)、第２の接続部材(7)並びに第１のリード(4)の内端部(4a)及び第２のリード(5)の内端部(5a)を封止する樹脂封止体(8)とを備える。第１のメッキ層(20a)と第２のメッキ層(20b)とを互いに異なる金属により形成し且つ第１の接続部材(6)と第２の接続部材(7)とを互いに異なる金属により形成し、第２のメッキ層(20b)が被着された第１のリード(4)の内端部(4a)の一部を除去するか又は第１のリード(4)の内端部(4a)上に第１のメッキ層(20a)を形成する前に第１のリード(4)の内端部(4a)の一部を部分的に除去することにより、第２のリード(5)の内端部(5a)より支持板(1)から離間して、第１のリード(4)の内端部(4a)を配置する。 The semiconductor device according to the present invention includes a support plate (1) having conductivity and heat dissipation, and a first electronic component (2) that is spaced apart and fixed on one main surface (1a) of the support plate (1). ) And the second electronic component (3), the inner end portion (4a) disposed away from the support plate (1), and the first plating layer (20a) formed on the surface of the inner end portion (4a). ) Having a first lead (4), and a first plating layer formed on the surface of each inner end (5a) and inner end (5a), which are spaced apart from the support plate (1). The second lead (5) having the second plating layer (20b) formed on the surface of the first plating layer (20a) and the first plating layer (20a), and the first lead via the first plating layer (20a) A metal first connecting member (6) for electrically connecting the inner end (4a) of the lead (4) and the first electronic component (2), a first plating layer (20a), and Gold for electrically connecting the inner end (5a) of the second lead (5) and the second electronic component (3) through the second plating layer (20b) Second connecting member (7) made of metal, at least one main surface (1a) of supporting plate (1), first electronic component (2), second electronic component (3), first connecting member (6) Resin sealing body for sealing the inner end (4a) of the second connecting member (7) and the first lead (4) and the inner end (5a) of the second lead (5) (8). The first plating layer (20a) and the second plating layer (20b) are formed of different metals, and the first connection member (6) and the second connection member (7) are formed of different metals. Then, a part of the inner end portion (4a) of the first lead (4) to which the second plating layer (20b) is applied is removed or the inner end portion (4a) of the first lead (4) is removed. ) A part of the inner end (4a) of the first lead (4) is partially removed before forming the first plating layer (20a) on the second lead (5). The inner end portion (4a) of the first lead (4) is arranged away from the support plate (1) from the inner end portion (5a).
製造の際に、第２のメッキ層(20b)は、図示しないメッキ塗布装置により第２のリード(5)の内端部(5a)上に形成される。メッキ塗布装置は、各リード(4, 5)の配列方向に対して平行に配置され、複数のリード(4, 5)へ同時に第２のメッキ層(20b)を形成する。従って、第２のリード(5)上の第２のメッキ層(20b)が形成されるべき領域より、支持板(1)から離間する形状を第１のリード(4)の内端部(4a)に付与すれば、第１のリード(4)の内端部(4a)上に第２のメッキ層(20b)のない半導体装置を製造することができる。このため、比較的大電流が流れる第１のリード(4)と第１の接続部材(6)との接続界面で、金属のマイグレーションによる接続強度の低下を確実に防止できる。また、第１のメッキ層(4a)のみを第１のリード(4)上に形成するので、ボンディング時の第１の接続部材(6)の位置決めが容易となる。 During manufacture, the second plating layer (20b) is formed on the inner end (5a) of the second lead (5) by a plating coating device (not shown). The plating coating apparatus is arranged in parallel to the arrangement direction of the leads (4, 5), and simultaneously forms the second plating layer (20b) on the plurality of leads (4, 5). Accordingly, the inner end portion (4a) of the first lead (4) has a shape separated from the support plate (1) from the region where the second plating layer (20b) on the second lead (5) is to be formed. ), A semiconductor device without the second plating layer (20b) on the inner end (4a) of the first lead (4) can be manufactured. For this reason, it is possible to reliably prevent a decrease in connection strength due to metal migration at the connection interface between the first lead (4) and the first connection member (6) through which a relatively large current flows. Further, since only the first plating layer (4a) is formed on the first lead (4), the positioning of the first connecting member (6) during bonding is facilitated.
また、本発明の第１のリードフレーム組立体の製法は、導電性及び放熱性を有する支持板(1)、支持板(1)からそれぞれ略等しく離間して配置される第１のリード(4)及び複数の第２のリード(5)をリードフレーム(10)に形成する工程と、第１のリード(4)の内端部(4a)及び第２のリード(5)の内端部(5a)上に第１のメッキ層(20a)を形成する工程と、第１のリード(4)の内端部(4a)の第１のメッキ層(20a)上及び第２のリード(5)の第１のメッキ層(20a)上に第２のメッキ層(20b)を重ねて形成する工程と、第２のメッキ層(20b)が被着された第１のリード(4)の内端部(4a)の一部を除去する工程と、支持板(1)上に第１の電子部品(2)及び第２の電子部品(3)を固着する工程と、第１のメッキ層(20a)を介して第１のリード(4)の内端部(4a)と第１の電子部品(2)の電極とを第１の接続部材(6)により電気的に接続すると共に、第１のメッキ層(20a)及び第２のメッキ層(20b)を介して第２のリード(5)の内端部(5a)と第２の電子部品(3)の電極とを第２の接続部材(7)により電気的に接続して、リードフレーム組立体(11)を形成する工程とを含む。第２のメッキ層(20b)を形成した第１のリード(4)の内端部(4a)を部分的に除去するため、従来のリードフレームをそのまま使用することができる。 In addition, the first lead frame assembly manufacturing method of the present invention includes a first lead (4) disposed substantially equally spaced from the support plate (1) and the support plate (1) having conductivity and heat dissipation. ) And a plurality of second leads (5) on the lead frame (10), and the inner end (4a) of the first lead (4) and the inner end of the second lead (5) ( 5a) forming a first plated layer (20a) on the first plated layer (20a) of the inner end (4a) of the first lead (4) and the second lead (5) A step of forming a second plating layer (20b) on the first plating layer (20a), and an inner end of the first lead (4) on which the second plating layer (20b) is deposited A step of removing a part of the portion (4a), a step of fixing the first electronic component (2) and the second electronic component (3) on the support plate (1), and a first plating layer (20a ) To connect the inner end (4a) of the first lead (4) and the electrode of the first electronic component (2) to the first connecting member (6). And electrically connecting the inner end portion (5a) of the second lead (5) to the second electronic component (3) via the first plating layer (20a) and the second plating layer (20b). And a second connecting member (7) to form a lead frame assembly (11). Since the inner end portion (4a) of the first lead (4) on which the second plating layer (20b) is formed is partially removed, a conventional lead frame can be used as it is.
更に、本発明による第２のリードフレーム組立体の製法は、導電性及び放熱性を有する支持板(1)、支持板(1)からそれぞれ略等しく離間して配置される第１のリード(4)及び複数の第２のリード(5)をリードフレーム(10)に形成する工程と、第１のリード(4)の内端部(4a)の一部を部分的に除去する工程と、第１のリード(4)の内端部(4a)及び第２のリード(5)の内端部(5a)上に第１のメッキ層(20a)を形成する工程と、第２のリード(5)の第１のメッキ層(20a)上に第２のメッキ層(20b)を重ねて形成する工程と、支持板(1)上に第１の電子部品(2)及び第２の電子部品(3)を固着する工程と、第１のメッキ層(20a)を介して第１のリード(4)の内端部(4a)と第１の電子部品(2)の電極とを第１の接続部材(6)により電気的に接続すると共に、第１のメッキ層(20a)及び第２のメッキ層(20b)を介して第２のリード(5)の内端部(5a)と第２の電子部品(3)の電極とを第２の接続部材(7)により電気的に接続して、リードフレーム組立体(11)を形成する工程とを含む。第２のメッキ層(20b)を形成する前に、第１のリード(4)の内端部(4a)を部分的に除去するため、従来のリードフレームをそのまま使用することができる。 Further, according to the second lead frame assembly manufacturing method of the present invention, the support plate (1) having conductivity and heat dissipation and the first lead (4) arranged substantially equally spaced from the support plate (1), respectively. ) And a plurality of second leads (5) on the lead frame (10), a step of partially removing a part of the inner end (4a) of the first lead (4), Forming a first plating layer (20a) on the inner end (4a) of the first lead (4) and the inner end (5a) of the second lead (5), and the second lead (5 ) And a step of forming a second plating layer (20b) on the first plating layer (20a), and a first electronic component (2) and a second electronic component (2) on the support plate (1). 3) fixing and the first connection between the inner end (4a) of the first lead (4) and the electrode of the first electronic component (2) via the first plating layer (20a) In addition to being electrically connected by the member (6), the first plating layer (20a) and the second plating layer (20b) The lead frame assembly (5) is electrically connected to the inner end (5a) of the second lead (5) and the electrode of the second electronic component (3) by the second connecting member (7). And 11) forming a step. Since the inner end portion (4a) of the first lead (4) is partially removed before the second plating layer (20b) is formed, the conventional lead frame can be used as it is.
本発明によれば、従前のリードフレームを用いて、リードと接続部材との接続強度が低下する欠陥を解消できると同時に、半導体装置を安価に製造することができる。また、ボンディングにより接続部材をリード上の不適切な位置に誤接続する接続不良を解消することができる。 According to the present invention, using a conventional lead frame, it is possible to eliminate a defect in which the connection strength between the lead and the connection member is reduced, and at the same time, it is possible to manufacture a semiconductor device at low cost. Further, it is possible to eliminate a connection failure in which the connection member is erroneously connected to an inappropriate position on the lead by bonding.
以下、本発明による半導体装置の実施の形態を図１から図３について説明する。 Embodiments of a semiconductor device according to the present invention will be described below with reference to FIGS.
図１に示す実施の形態の半導体装置を製造する際に、まず、銅等の金属製の板材から周知のプレス加工により所望な形状のリードフレーム(10)を形成する。リードフレーム(10)は、支持板(1)と、第１のリード(4)及び複数の第２のリード(5)と、これらを連結する細条とを有する。次に、ニッケルを主成分とする第１のメッキ領域(20a)をリードフレーム(10)の表面全体に被覆形成する。その後、図２に示すように、第１及び第２のリード(4, 5)の内端部(4a, 5a)の一部に、銀を主成分とする第２のメッキ層(20b)を形成する。第１及び第２のリード(4, 5)の配置方向と平行に伸びるブラシ又はスプレーにより、全リード(4, 5)の内端部(4a, 5a)の略半分の領域にメッキ液を同時に塗布して、第２のメッキ層(20b)が形成される。第２のメッキ層(20b)が形成される第１及び第２のリード(4, 5)の内端部(4a, 5a)は、支持板(1)から等距離に配置される。 When the semiconductor device of the embodiment shown in FIG. 1 is manufactured, first, a lead frame (10) having a desired shape is formed from a metal plate material such as copper by known press processing. The lead frame (10) has a support plate (1), a first lead (4) and a plurality of second leads (5), and strips connecting them. Next, a first plating region (20a) containing nickel as a main component is formed on the entire surface of the lead frame (10). Thereafter, as shown in FIG. 2, a second plating layer (20b) containing silver as a main component is formed on a part of the inner ends (4a, 5a) of the first and second leads (4, 5). Form. By using a brush or spray that extends parallel to the direction in which the first and second leads (4, 5) are arranged, the plating solution is simultaneously applied to substantially half of the inner ends (4a, 5a) of all the leads (4, 5). The second plating layer (20b) is formed by coating. Inner ends (4a, 5a) of the first and second leads (4, 5) on which the second plated layer (20b) is formed are arranged at an equal distance from the support plate (1).
更に、図２のIII−III線に沿う部分断面図である図３に示すように、第１のリード(4)上に形成された第２のメッキ層(20b)を、切除線(21)に沿ってカッター等により切除する。切除線(21)は、リード(4)の内端部(4a)内で且つ切除後のリード(4)が第２のメッキ層(20b)を有さない範囲であればよい。 Further, as shown in FIG. 3 which is a partial cross-sectional view taken along line III-III in FIG. 2, the second plating layer (20b) formed on the first lead (4) is removed from the cutting line (21). Cut with a cutter. The excision line (21) may be within the range where the lead (4) after the excision does not have the second plating layer (20b) in the inner end portion (4a) of the lead (4).
第２のメッキ層(20b)が除去された第１のリード(4)では、第１のメッキ層(20a)を介して第１のリード(4)の内端部(4a)と第１の接続部材(6)との間に安定な接続状態が保持され、マイグレーションに伴う脆弱化を確実に防止することができる。また、本発明の製法では、複数のリードフレームを複数形成した場合にも、各リードフレームの切除線(21)が平行であるので、切除線(21)の設定が容易になる。その後、電力用半導体素子(2)及び制御用半導体素子(3)をそれぞれ半田付け等により支持板(1)の上面(1a)に固着し、電力用半導体素子(2)の上面電極(2a)と、電力用リードである第１のリード(4)のニッケルを主成分とする第１のメッキ層(20a)とを、アルミニウムから成る第１の接続部材(6)により電気的に接続する。また、制御用半導体素子(3)の上面電極(3a)と、制御用リードである第２のリード(5)の銀を主成分とする第２のメッキ層(20b)とを、金から成る第２の接続部材(7)により電気的に接続する。上記の工程により、リードフレーム組立体(10)が形成される。 In the first lead (4) from which the second plating layer (20b) has been removed, the inner end (4a) of the first lead (4) is connected to the first lead (4a) via the first plating layer (20a). A stable connection state is maintained between the connection member (6), and weakening due to migration can be reliably prevented. Further, in the manufacturing method of the present invention, even when a plurality of lead frames are formed, the cut lines (21) of the respective lead frames are parallel, so that the cut lines (21) can be easily set. Thereafter, the power semiconductor element (2) and the control semiconductor element (3) are each fixed to the upper surface (1a) of the support plate (1) by soldering or the like, and the upper surface electrode (2a) of the power semiconductor element (2) The first plating layer (20a) containing nickel as a main component of the first lead (4) which is a power lead is electrically connected by the first connecting member (6) made of aluminum. Further, the upper surface electrode (3a) of the control semiconductor element (3) and the second plating layer (20b) mainly composed of silver of the second lead (5) as the control lead are made of gold. The second connecting member (7) is electrically connected. The lead frame assembly (10) is formed by the above process.
更に、リードフレーム組立体(10)は、例えば、周知のトランスファモールド法により、支持板(1)の少なくとも主面(1a)、電力用半導体素子(2)及び制御用半導体素子(3)、第１及び第２の接続部材(6, 7)、各リード(4, 5)の内端部(4a, 5a)が、エポキシ樹脂等の熱硬化性樹脂から成る樹脂封止体(8)（図１の破線に示す）により、被覆される。連結細条等の不要部を除去して、各リードフレーム組立体(10)を個別化することにより、ハイブリッドＩＣ（集積回路）等の樹脂封止型電子部品としての半導体装置(11)が形成される。 Furthermore, the lead frame assembly (10) is formed by, for example, a known transfer molding method, at least the main surface (1a) of the support plate (1), the power semiconductor element (2), the control semiconductor element (3), the second Resin encapsulant (8) in which inner end portions (4a, 5a) of first and second connecting members (6, 7) and leads (4, 5) are made of a thermosetting resin such as epoxy resin (see FIG. 1). By removing unnecessary parts such as connecting strips and individualizing each lead frame assembly (10), a semiconductor device (11) as a resin-encapsulated electronic component such as a hybrid IC (integrated circuit) is formed. Is done.
本発明の実施の態様は前記実施の形態に限定されず、種々の変更が可能である。図示しないが、例えば、リードフレーム(10)を形成した後であって第１及び第２の接続部材(6, 7)を接続する以前であれば、いつでも第１のリード(4)の一部を切除することができる。即ち、第１のリード(4)及び複数の第２のリード(5)をリードフレーム(10)に形成した後に第１のリード(4)の内端部(4a)の一部を部分的に除去し、更に、第１のリード(4)の内端部(4a)及び前記第２のリード(5)の内端部(5a)上に第１のメッキ層(20a)を形成して、第２のリード(5)の第１のメッキ層(20a)上に第２のメッキ層(20b)を重ねて形成することもできる。各メッキ層(20a, 20b)の形成前に第１のリード(4)の内端部(4a)の一部を切除しても、第１のリード(4)上に第２のメッキ層が形成されないので、同様の効果が得られる。 The embodiment of the present invention is not limited to the above-described embodiment, and various modifications can be made. Although not shown, for example, after forming the lead frame (10) and before connecting the first and second connecting members (6, 7), any part of the first lead (4) Can be excised. That is, after forming the first lead (4) and the plurality of second leads (5) on the lead frame (10), a part of the inner end (4a) of the first lead (4) is partially formed. Further, a first plating layer (20a) is formed on the inner end (4a) of the first lead (4) and the inner end (5a) of the second lead (5), A second plating layer (20b) may be formed on the first plating layer (20a) of the second lead (5). Even if a part of the inner end (4a) of the first lead (4) is removed before the formation of each plating layer (20a, 20b), the second plating layer is formed on the first lead (4). Since it is not formed, the same effect can be obtained.
また、第２のメッキ層(20b)は、メッキ浴槽内にリードフレームを浸漬させて形成することもできる。この場合、リードフレームの第２のメッキ層(20b)を形成しない領域にマスク等を施してメッキすると良い。 The second plating layer (20b) can also be formed by immersing a lead frame in the plating bath. In this case, it is preferable to perform plating by applying a mask or the like to a region of the lead frame where the second plating layer (20b) is not formed.
また、第１及び第２の電子部品として、半導体素子の代わりに回路部品（電子回路基板）等を使用しても良い。 Further, as the first and second electronic components, circuit components (electronic circuit boards) or the like may be used instead of the semiconductor elements.
本発明は、異なる金属製の複数の接続部材により、電子部品の複数の電極とメッキされたリードとを接続するリードフレーム組立体及びそのリードフレーム組立体を使用する半導体装置に良好に適用できる。 The present invention can be satisfactorily applied to a lead frame assembly that connects a plurality of electrodes of electronic components and plated leads by a plurality of connecting members made of different metals, and a semiconductor device that uses the lead frame assembly.
(1)・・支持板、 (1a)・・主面、 (2)・・第１の半導体素子（電力用半導体素子）、 (3)・・第２の半導体素子（制御用半導体素子）、 (2a, 3a)・・上面電極、 (4)・・第１のリード、 (5)・・第２のリード、 (6)・・第１の接続部材、 (7)・・第２の接続部材、 (8)・・樹脂封止体、 (10)・・リードフレーム組立体、 (11)・・半導体装置、 (20)・・内端部、 (20a)・・第１のメッキ層、 (20b)・・第２のメッキ層、 (21)・・接除線、 (1) ・ ・ Support plate, (1a) ・ ・ Main surface, (2) ・ ・ First semiconductor element (power semiconductor element), (3) ・ ・ Second semiconductor element (control semiconductor element), (2a, 3a) ・ ・ Top electrode, (4) ・ ・ First lead, (5) ・ ・ Second lead, (6) ・ ・ First connection member, (7) ・ ・ Second connection Member, (8) ... Resin sealing body, (10) ... Lead frame assembly, (11) ... Semiconductor device, (20) ... Inner end, (20a) ... First plating layer, (20b) ... Second plating layer, (21)
Claims (5)
該支持板の一方の主面上に互いに離間して固着された第１の電子部品及び第２の電子部品と、
前記支持板から離間して配置された内端部及び該内端部の表面に形成された第１のメッキ層を有する第１のリードと、
それぞれ前記支持板から離間して配置された各内端部、該内端部の表面に形成された前記第１のメッキ層及び該第１のメッキ層の表面に形成された第２のメッキ層を有する第２のリードと、
前記第１のメッキ層を介して前記第１のリードの内端部と前記第１の電子部品とを電気的に接続する金属製の第１の接続部材と、
前記第１のメッキ層及び前記第２のメッキ層を介して前記第２のリードの内端部と前記第２の電子部品とを電気的に接続する金属製の第２の接続部材と、
前記支持板の少なくとも一方の主面、前記第１の電子部品、前記第２の電子部品、前記第１の接続部材、前記第２の接続部材並びに前記第１のリードの内端部及び第２のリードの内端部を封止する樹脂封止体とを備え、
前記第１のメッキ層と前記第２のメッキ層とを互いに異なる金属により形成し且つ前記第１の接続部材と前記第２の接続部材とを互いに異なる金属により形成し、
前記第２のメッキ層が被着された前記第１のリードの内端部の一部を除去するか又は前記第１のリードの内端部上に前記第１のメッキ層を形成する前に前記第１のリードの内端部の一部を部分的に除去することにより、前記第１のリードの内端部を前記第２のリードの内端部より前記支持板から離間して配置したことを特徴とする半導体装置。 A support plate having conductivity and heat dissipation;
A first electronic component and a second electronic component which are fixedly spaced apart from each other on one main surface of the support plate;
A first lead having an inner end portion spaced from the support plate and a first plating layer formed on the surface of the inner end portion;
Each inner end portion spaced apart from the support plate, the first plating layer formed on the surface of the inner end portion, and the second plating layer formed on the surface of the first plating layer A second lead having
A first connecting member made of metal that electrically connects an inner end portion of the first lead and the first electronic component via the first plated layer;
A metal second connecting member that electrically connects an inner end portion of the second lead and the second electronic component via the first plated layer and the second plated layer;
At least one main surface of the support plate, the first electronic component, the second electronic component, the first connection member, the second connection member, and the inner end portion of the first lead and the second A resin sealing body that seals the inner end of the lead,
Forming the first plating layer and the second plating layer with different metals and forming the first connection member and the second connection member with different metals;
Before removing a part of the inner end of the first lead to which the second plating layer is applied or forming the first plating layer on the inner end of the first lead By partially removing a part of the inner end portion of the first lead, the inner end portion of the first lead is disposed away from the support plate from the inner end portion of the second lead. A semiconductor device.
前記第１のリードの内端部及び前記第２のリードの内端部上に第１のメッキ層を形成する工程と、
前記第１のリードの内端部の前記第１のメッキ層上及び前記第２のリードの前記第１のメッキ層上に第２のメッキ層を重ねて形成する工程と、
前記第２のメッキ層が被着された前記第１のリードの内端部の一部を除去する工程と、
前記支持板上に第１の電子部品及び第２の電子部品を固着する工程と、
前記第１のメッキ層を介して前記第１のリードの内端部と前記第１の電子部品の電極とを第１の接続部材により電気的に接続すると共に、前記第１のメッキ層及び第２のメッキ層を介して前記第２のリードの内端部と前記第２の電子部品の電極とを第２の接続部材により電気的に接続して、リードフレーム組立体を形成する工程とを含むことを特徴とするリードフレーム組立体の製法。 A step of forming a support plate having conductivity and heat dissipation, a first lead and a plurality of second leads that are arranged substantially equally spaced from the support plate, respectively, on the lead frame;
Forming a first plating layer on the inner end of the first lead and the inner end of the second lead;
Forming a second plating layer overlying the first plating layer on the inner end of the first lead and the first plating layer of the second lead;
Removing a part of an inner end portion of the first lead to which the second plating layer is deposited;
Fixing the first electronic component and the second electronic component on the support plate;
An inner end portion of the first lead and the electrode of the first electronic component are electrically connected via the first plating layer by a first connecting member, and the first plating layer and the first Forming a lead frame assembly by electrically connecting the inner end of the second lead and the electrode of the second electronic component with a second connecting member through two plating layers. A method of manufacturing a lead frame assembly comprising:
前記第１のリードの内端部の一部を部分的に除去する工程と、
前記第１のリードの内端部及び前記第２のリードの内端部上に第１のメッキ層を形成する工程と、
前記第２のリードの第１のメッキ層上に第２のメッキ層を重ねて形成する工程と、
前記支持板上に第１の電子部品及び第２の電子部品を固着する工程と、
前記第１のメッキ層を介して前記第１のリードの内端部と前記第１の電子部品の電極とを第１の接続部材により電気的に接続すると共に、前記第１のメッキ層及び前記第２のメッキ層を介して前記第２のリードの内端部と前記第２の電子部品の電極とを第２の接続部材により電気的に接続して、リードフレーム組立体を形成する工程とを含むことを特徴とするリードフレーム組立体の製法。 A step of forming a support plate having conductivity and heat dissipation, a first lead and a plurality of second leads that are arranged substantially equally spaced from the support plate, respectively, on the lead frame;
Partially removing a part of the inner end of the first lead;
Forming a first plating layer on the inner end of the first lead and the inner end of the second lead;
Forming a second plated layer overlying the first plated layer of the second lead;
Fixing the first electronic component and the second electronic component on the support plate;
The inner end portion of the first lead and the electrode of the first electronic component are electrically connected through the first plating layer by a first connecting member, and the first plating layer and the Electrically connecting the inner end of the second lead and the electrode of the second electronic component with a second connecting member via a second plating layer to form a lead frame assembly; A method for producing a lead frame assembly comprising:
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