JP5002009B2 - 光学装置 - Google Patents
光学装置 Download PDFInfo
- Publication number
- JP5002009B2 JP5002009B2 JP2009515735A JP2009515735A JP5002009B2 JP 5002009 B2 JP5002009 B2 JP 5002009B2 JP 2009515735 A JP2009515735 A JP 2009515735A JP 2009515735 A JP2009515735 A JP 2009515735A JP 5002009 B2 JP5002009 B2 JP 5002009B2
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- Prior art keywords
- mirror
- conical
- radiation
- radiation beam
- conical mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 230000003287 optical effect Effects 0.000 title claims description 38
- 230000005855 radiation Effects 0.000 claims description 120
- 239000000758 substrate Substances 0.000 claims description 42
- 238000000059 patterning Methods 0.000 claims description 29
- 238000005286 illumination Methods 0.000 claims description 19
- 238000013519 translation Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000007654 immersion Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/18—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical projection, e.g. combination of mirror and condenser and objective
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/002—Arrays of reflective systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0605—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using two curved mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
Claims (7)
- 光学装置であって、
反射性外面がある円錐形第一ミラーと、
反射性内面及び開口がある円錐形第二ミラーとを備え、
使用時に、放射エミッタからの放射が前記開口を通過し、前記第二円錐形ミラーに入射する前に前記第一円錐形ミラーに入射し、
前記光学装置が前記放射から放射ビームを形成し、
前記放射ビームの発散を調節するために、前記第一円錐形ミラーが前記第二円錐形ミラーに向かって及び前記第二円錐形ミラーから離れるように平行移動可能であるか、前記第二円錐形ミラーが前記第一円錐形ミラーに向かって及び前記第一円錐形ミラーから平行移動可能であり、
前記第一円錐形ミラーは、第1及び第2の要素を有し、前記放射ビームの発散を調節するために、前記第1の要素が前記第2の要素に向かって及び前記第2の要素から離れるようにさらに平行移動可能である、光学装置。 - 前記第二円錐形ミラーと前記第一円錐形ミラーが両方とも相互に向かって、及び相互から離れるように平行移動可能である、請求項1に記載の装置。
- 前記平行移動可能なミラーを平行移動させる1つ又は複数のミラーをさらに備える、請求項1に記載の装置。
- 反射性外面がある円錐形第一ミラーと、反射性内面及び開口がある円錐形第二ミラーとを備える光学装置であって、使用時に、放射が前記開口を通過し、前記第二円錐形ミラーに入射する前に前記第一円錐形ミラーに入射し、該光学装置が前記放射から放射ビームを形成し、前記放射ビームの発散を調節するために、前記第一円錐形ミラーが前記第二円錐形ミラーに向かって及び前記第二円錐形ミラーから離れるように平行移動可能であるか、前記第二円錐形ミラーが前記第一円錐形ミラーに向かって及び前記第一円錐形ミラーから離れるように平行移動可能である、光学装置と、
前記光学装置によって形成された前記放射ビームを調整する照明システムと、
前記放射ビームの断面にパターンを与えて、パターン付き放射ビームを形成することができるパターニングデバイスを支持する支持体と、
前記パターン付き放射ビームを基板のターゲット部分に投影する投影システムと、
を備え、
前記第一円錐形ミラーは、第1及び第2の要素を有し、前記放射ビームの発散を調節するために、前記第1の要素が前記第2の要素に向かって及び前記第2の要素から離れるようにさらに平行移動可能である、リソグラフィ装置。 - 前記照明システムが、前記放射ビームを調整する複数のミラーを備え、前記ミラーの少なくとも1つに、前記ミラーの反射性部分のサイズを調節できるブレードが設けられる、請求項4に記載の装置。
- 前記照明システムが、前記放射ビームを調整する複数のミラーを備え、前記ミラーの少なくとも1つがその光軸に沿って平行移動可能である、請求項4に記載の装置。
- 前記照明システムの前記他のミラーの1つが、前記平行移動可能なミラーとともに望遠鏡を形成する、請求項6に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/471,728 US7817246B2 (en) | 2006-06-21 | 2006-06-21 | Optical apparatus |
US11/471,728 | 2006-06-21 | ||
PCT/EP2007/005144 WO2007147498A1 (en) | 2006-06-21 | 2007-06-11 | Optical apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009541977A JP2009541977A (ja) | 2009-11-26 |
JP5002009B2 true JP5002009B2 (ja) | 2012-08-15 |
Family
ID=38561754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009515735A Expired - Fee Related JP5002009B2 (ja) | 2006-06-21 | 2007-06-11 | 光学装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7817246B2 (ja) |
JP (1) | JP5002009B2 (ja) |
KR (1) | KR20090018149A (ja) |
TW (1) | TWI374340B (ja) |
WO (1) | WO2007147498A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5878120B2 (ja) * | 2009-08-14 | 2016-03-08 | エーエスエムエル ネザーランズ ビー.ブイ. | Euv放射システムおよびリソグラフィ装置 |
US10061201B2 (en) * | 2016-10-24 | 2018-08-28 | Hrl Laboratories, Llc | Bottom up apparatus design for formation of self-propagating photopolymer waveguides |
US11934105B2 (en) * | 2017-04-19 | 2024-03-19 | Nikon Corporation | Optical objective for operation in EUV spectral region |
CN116045828B (zh) * | 2023-03-29 | 2023-10-20 | 睿励科学仪器(上海)有限公司 | 一种光谱椭偏测量***和一种光谱椭偏测量方法 |
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-
2006
- 2006-06-21 US US11/471,728 patent/US7817246B2/en not_active Expired - Fee Related
-
2007
- 2007-06-11 WO PCT/EP2007/005144 patent/WO2007147498A1/en active Application Filing
- 2007-06-11 KR KR1020087031005A patent/KR20090018149A/ko active Search and Examination
- 2007-06-11 JP JP2009515735A patent/JP5002009B2/ja not_active Expired - Fee Related
- 2007-06-15 TW TW096121661A patent/TWI374340B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20090018149A (ko) | 2009-02-19 |
JP2009541977A (ja) | 2009-11-26 |
US20070296943A1 (en) | 2007-12-27 |
TWI374340B (en) | 2012-10-11 |
WO2007147498A1 (en) | 2007-12-27 |
TW200807181A (en) | 2008-02-01 |
US7817246B2 (en) | 2010-10-19 |
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