JP4988303B2 - 超音波接合強度の予測方法 - Google Patents
超音波接合強度の予測方法 Download PDFInfo
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- JP4988303B2 JP4988303B2 JP2006291242A JP2006291242A JP4988303B2 JP 4988303 B2 JP4988303 B2 JP 4988303B2 JP 2006291242 A JP2006291242 A JP 2006291242A JP 2006291242 A JP2006291242 A JP 2006291242A JP 4988303 B2 JP4988303 B2 JP 4988303B2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
Landscapes
- Pressure Welding/Diffusion-Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Description
前述した式(1)〜(5)による圧縮変形モデル(特に式(3))では、鍛造加工に必要な荷重を理論推定する際に用いられるスラブ法を用いている。この方法は、変形領域を板状微小要素(slab)に分割し、分割した要素に対して垂直に作用する応力を主応力として力の釣り合い条件と降伏条件を連立して解くものである。また、接続技術への応用としてバンプ又は粒子の変形を解析することを目的としているため、具体的には「円柱の圧縮変形」として、非特許文献1に詳細な記述のある「平面ひずみのすべり変形解析」より得られた式を使用する。本モデル式の概要は以下のとおりである。
フリップチップ接続(FCB;Flip Chip Bonding)に良く用いられるめっきバンプは角柱型であるが、これを図5に示すような円柱形状のバンプ501とし、バンプ501の径を高さ及び断面積が等しい等価径Dとして定義すれば、式(8)は次の式(9)で示されるものとなる。なお、等価径とは、高さがhである円柱と角柱とにおいて、圧縮方向に垂直な断面の面積が、角柱に等しい円柱の径を示すものである。角柱の横幅をW,奥行きをLとし、円柱の直径をD0とすると「π(D0/2)2=L・W→D0=2(L・W/π)1/2」のようにして求めることができる。
ワイヤボンディング法によるワイヤバンプは、トーチによってワイヤを溶断した後、ワイヤ端に再凝固時に形成された球状部分をキャピラリで圧縮変形させ、かつ球状部分につながるワイヤを引き千切りによって切断した形状が基本形状となる。この形状は、図10の電子顕微鏡写真に示すとおり、主に3段構成であり、以下では先端(上端)から数えて1段目,2段目,3段目と呼ぶ。なお、1段目は、動物の尾に例えて「テール」、3段目は最下部であるため「台座」と呼ばれることもある。
超音波接合では、ヘッドはチップ裏面から基板に向けて圧縮方向に荷重を加えつつチップ面に水平な超音波振動を加えるが、この超音波振動によって金バンプの変形抵抗が低下して変形し易くなる「Blaha」効果と呼ばれる現象が生じる。これは、振動によって塑性変形時の金属結晶内の転位におけるポテンシャル障壁を下げる効果といわれている。ただし、チップに水平方向の振動を加えてもバンプ内部の応力方向は複雑であり、縦方向の圧縮応力成分も生じることを考慮すれば、実質的には接合装置が静的に加える荷重に加味して超音波振動による応力が加わっているため、上述した変形が進むと考えることができる。
接合条件を評価する際は、理想的な接合状態における強度と比較することで、設定した接合条件が適切か否かの判断を行うことが必要になる。
マイクロボール(球形粒子)の変形挙動についても、変形過程においては円柱型に近似できる。円柱の場合には変形面積が増加し、高さが減少する相関を体積一定の関係から単純な式(10)で表すことができた。しかし、初期形状が球の場合には、変形面積と高さの関係を与える式を仮定する必要がある。
Claims (1)
- 実装対象のチップに設けられたバンプに荷重、熱および超音波を印加して前記バンプを前記チップが実装される基板の接続端子に接続して前記チップを前記基板に実装したときの前記バンプと前記接続端子との接合強度を予測する超音波接合強度の予測方法であって、
以下の式(1)を用い、常温における前記バンプの降伏応力σy及び予め得られている常数α1,α2,α3,・・・をもとに、熱を前記バンプに印加して常温より温度T上昇させたときの前記バンプの降伏応力である温度印加時降伏応力σyTを求める第1ステップと、
以下の式(2)を用い、前記温度印加時降伏応力σyT及び予め得られている常数β1,β2,β3,・・・をもとに、さらに振幅δの超音波を前記バンプに印加したときの前記バンプ降伏応力である熱、超音波印加時降伏応力σyUSを求める第2ステップと、
以下の式(3)を用い、前記熱、前記超音波印加時降伏応力σyUS,予め測定されている初期状態の前記バンプの高さh0,初期状態の前記バンプの等価的な径D0,及び前記バンプとこのバンプが接合される前記接続端子との間の摩擦係数μをもとに、さらに荷重Fを印加した超音波接合により変形した後の前記バンプの高さである接合バンプ高さhを求める第3ステップと、
以下の式(4)を用い、前記高さh0,前記径D0,及び前記接合バンプ高さhをもとに、このバンプと前記接続端子との接合面積Sを求める第4ステップと、
以下の式(5)を用い、前記接合面積S,常温における前記バンプの降伏応力σy,及び予め得られている常数φをもとに接合強度予測値fを求める第5ステップと
を少なくとも備えることを特徴とする超音波接合強度の予測方法。
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WO2010113250A1 (ja) * | 2009-03-31 | 2010-10-07 | トヨタ自動車株式会社 | 接合品質検査装置及び接合品質検査方法 |
JP5754988B2 (ja) * | 2011-03-07 | 2015-07-29 | 古河電気工業株式会社 | 金属接合部の評価方法および推定方法 |
JP6885804B2 (ja) * | 2017-06-28 | 2021-06-16 | 日本アビオニクス株式会社 | 超音波接合装置 |
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JPH0249447A (ja) * | 1988-05-20 | 1990-02-19 | Hitachi Ltd | 半導体装置とその製造方法 |
JP2812098B2 (ja) * | 1992-10-02 | 1998-10-15 | 日本電気株式会社 | 半導体装置の接合強度評価システム |
JP2000150563A (ja) * | 1998-11-06 | 2000-05-30 | Toyota Motor Corp | ワイヤボンディング接合部の接合状態の予測方法 |
JP4036786B2 (ja) * | 2003-04-24 | 2008-01-23 | 唯知 須賀 | 電子部品実装方法 |
JP4041045B2 (ja) * | 2003-09-24 | 2008-01-30 | シャープ株式会社 | 超音波フリップチップ接合方法 |
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