JP4974672B2 - 圧力波発生装置 - Google Patents
圧力波発生装置 Download PDFInfo
- Publication number
- JP4974672B2 JP4974672B2 JP2006355625A JP2006355625A JP4974672B2 JP 4974672 B2 JP4974672 B2 JP 4974672B2 JP 2006355625 A JP2006355625 A JP 2006355625A JP 2006355625 A JP2006355625 A JP 2006355625A JP 4974672 B2 JP4974672 B2 JP 4974672B2
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- JP
- Japan
- Prior art keywords
- wave generator
- pressure wave
- insulator layer
- heating element
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K15/00—Acoustics not otherwise provided for
- G10K15/04—Sound-producing devices
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Multimedia (AREA)
- Apparatuses For Generation Of Mechanical Vibrations (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Thermotherapy And Cooling Therapy Devices (AREA)
Description
本発明の圧力波発生装置1と従来の絶縁体層5のない圧力波発生装置とを比較した例を示す。いずれも、基板抵抗が5Ω・cmのp型Siウエハを用い、nc−Siの断熱層3の厚さを100μmとした。従来の圧力波発生装置は、断熱層3の上にアルミニウムで発熱体4を形成した。本発明の圧力波発生装置1は、断熱層3の上にプラズマCVDによって、ノンドープ・ケイ酸ガラス(NSG)を200nmの厚さに形成し、その上に従来例と同じくアルミニウムで発熱体4を形成した。そして、いずれも発熱体4に間欠するパルス電圧を印加して音波を発生させた。
2 基板
3 断熱層
4 発熱体(導体層)
5 絶縁体層
6 駆動回路
7 電極層
Claims (3)
- 熱伝導性の基板と、
該基板の一方の主面に形成されたナノ結晶シリコン層と、
該ナノ結晶シリコン層の上に堆積させることにより形成された電気絶縁体層と、
該電気絶縁体層の上に形成され、屈曲部を含み、交流成分を含む電流が印加されて発熱する導体層と、
を備えることを特徴とする圧力波発生装置。 - 前記電気絶縁体層は、窒化珪素(Si3N4)、2酸化珪素(SiO2)、酸化アルミニウム(Al2O3)、酸化マグネシウム(MgO)、ダイヤモンド結晶炭素(C)、窒化アルミニウム(AlN)又は炭化珪素(SiC)のいずれか1つを含んで形成されることを特徴とする請求項1に記載の圧力波発生装置。
- 前記導体層は、金(Au)又はタングステン(W)を含んで形成されることを特徴とする請求項1または2に記載の圧力波発生装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006355625A JP4974672B2 (ja) | 2006-12-28 | 2006-12-28 | 圧力波発生装置 |
US12/521,120 US8130593B2 (en) | 2006-12-28 | 2007-12-17 | Pressure wave generator and temperature controlling method thereof |
PCT/JP2007/074248 WO2008081706A1 (ja) | 2006-12-28 | 2007-12-17 | 圧力波発生装置及びその温度調整方法 |
TW096150357A TWI401122B (zh) | 2006-12-28 | 2007-12-26 | Pressure wave generating device and temperature adjusting method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006355625A JP4974672B2 (ja) | 2006-12-28 | 2006-12-28 | 圧力波発生装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008161816A JP2008161816A (ja) | 2008-07-17 |
JP4974672B2 true JP4974672B2 (ja) | 2012-07-11 |
Family
ID=39588390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006355625A Active JP4974672B2 (ja) | 2006-12-28 | 2006-12-28 | 圧力波発生装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8130593B2 (ja) |
JP (1) | JP4974672B2 (ja) |
TW (1) | TWI401122B (ja) |
WO (1) | WO2008081706A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012020600A1 (ja) * | 2010-08-10 | 2012-02-16 | 株式会社村田製作所 | 音波源および超音波発生装置 |
DE102014101287B4 (de) * | 2014-02-03 | 2017-09-21 | Bundesrepublik Deutschland, Vertreten Durch Den Bundesminister Für Wirtschaft Und Energie, Dieser Vertreten Durch Den Präsidenten Der Bundesanstalt Für Materialforschung Und -Prüfung (Bam) | Thermoakustischer Ultraschallwandler |
CN109622347A (zh) * | 2018-12-26 | 2019-04-16 | 浙江清华柔性电子技术研究院 | 柔性mems超声波换能器及其制作方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2447593A2 (fr) * | 1978-08-11 | 1980-08-22 | Thomson Csf | Dispositif autoregule en temperature et son application a la mesure de temperature par couple thermo-electrique |
JP3705926B2 (ja) | 1998-04-23 | 2005-10-12 | 独立行政法人科学技術振興機構 | 圧力波発生装置 |
JP3798302B2 (ja) * | 2001-11-20 | 2006-07-19 | 独立行政法人科学技術振興機構 | 熱誘起圧力波発生装置 |
SG149680A1 (en) * | 2001-12-12 | 2009-02-27 | Semiconductor Energy Lab | Film formation apparatus and film formation method and cleaning method |
KR100685684B1 (ko) * | 2003-02-28 | 2007-02-26 | 노우코우다이 티엘오 가부시키가이샤 | 열 여기음파 발생장치 |
JP3845077B2 (ja) | 2003-08-28 | 2006-11-15 | 農工大ティー・エル・オー株式会社 | 音波発生装置の製造方法 |
JP3865736B2 (ja) * | 2004-03-17 | 2007-01-10 | 農工大ティー・エル・オー株式会社 | 超音波音源および超音波センサ |
JP4617710B2 (ja) * | 2004-04-28 | 2011-01-26 | パナソニック電工株式会社 | 圧力波発生素子 |
WO2005107318A1 (ja) * | 2004-04-28 | 2005-11-10 | Matsushita Electric Works, Ltd. | 圧力波発生装置及びその製造方法 |
JP4466231B2 (ja) * | 2004-06-25 | 2010-05-26 | パナソニック電工株式会社 | 圧力波発生素子およびその製造方法 |
JP5221864B2 (ja) * | 2005-10-26 | 2013-06-26 | パナソニック株式会社 | 圧力波発生装置およびその製造方法 |
US8130986B2 (en) * | 2006-01-23 | 2012-03-06 | The Regents Of The University Of Michigan | Trapped fluid microsystems for acoustic sensing |
-
2006
- 2006-12-28 JP JP2006355625A patent/JP4974672B2/ja active Active
-
2007
- 2007-12-17 WO PCT/JP2007/074248 patent/WO2008081706A1/ja active Application Filing
- 2007-12-17 US US12/521,120 patent/US8130593B2/en not_active Expired - Fee Related
- 2007-12-26 TW TW096150357A patent/TWI401122B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW200841941A (en) | 2008-11-01 |
TWI401122B (zh) | 2013-07-11 |
JP2008161816A (ja) | 2008-07-17 |
US20100025145A1 (en) | 2010-02-04 |
WO2008081706A1 (ja) | 2008-07-10 |
US8130593B2 (en) | 2012-03-06 |
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