JP4974545B2 - 太陽電池ストリングの製造方法 - Google Patents
太陽電池ストリングの製造方法 Download PDFInfo
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- JP4974545B2 JP4974545B2 JP2006048823A JP2006048823A JP4974545B2 JP 4974545 B2 JP4974545 B2 JP 4974545B2 JP 2006048823 A JP2006048823 A JP 2006048823A JP 2006048823 A JP2006048823 A JP 2006048823A JP 4974545 B2 JP4974545 B2 JP 4974545B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 238000000034 method Methods 0.000 title claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 35
- 150000001875 compounds Chemical class 0.000 claims description 25
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 32
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 15
- 239000000758 substrate Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- UIESIEAPEWREMY-UHFFFAOYSA-N hydridoarsenic(2.) (triplet) Chemical compound [AsH] UIESIEAPEWREMY-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (5)
- 光電変換層を有する積層体と、前記積層体に形成された第1電極と、前記積層体に形成された第2電極と、前記第1電極に接続された第1インターコネクタと、前記第2電極に接続された第2インターコネクタとを含む化合物半導体太陽電池が、複数接続された太陽電池ストリングを製造する方法であって、
前記光電変換層を有する前記積層体を形成する工程と、
前記積層体に前記第1電極を形成する工程と、
前記積層体に前記第2電極を形成する工程と、
前記第1電極に前記第1インターコネクタを接続する工程と、
前記第2電極に前記第2インターコネクタを接続する工程と、
前記第1インターコネクタおよび前記第2インターコネクタが接続された前記化合物半導体太陽電池を薄型化する工程と、
前記薄型化する工程の後に、第1の化合物半導体太陽電池の前記第1電極に接続された前記第1インターコネクタと、第2の化合物半導体太陽電池の前記第2電極に接続された前記第2インターコネクタとを導電性の材質からなる中間部材により接続する工程と、を含む、太陽電池ストリングの製造方法。 - 前記中間部材がストレスリリース機能を有することを特徴とする、請求項1に記載の太陽電池ストリングの製造方法。
- 前記第1インターコネクタと前記第2インターコネクタとはそれぞれ互いに向き合わない位置にずらして設置されていることを特徴とする、請求項1または2に記載の太陽電池ストリングの製造方法。
- 前記第1の化合物半導体太陽電池において前記第1電極と前記第1インターコネクタとの接続部が複数存在し、前記第2の化合物半導体太陽電池において前記第2電極と前記第2インターコネクタとの接続部が複数存在することを特徴とする、請求項1から3のいずれかに記載の太陽電池ストリングの製造方法。
- 前記第2インターコネクタを接続する工程と前記中間部材により接続する工程との間に、前記第1インターコネクタおよび前記第2インターコネクタのそれぞれの一部が透明接着剤から露出した状態になるように前記積層体上に保護フィルムを前記透明接着剤にて接着する工程を含むことを特徴とする、請求項1から4のいずれかに記載の太陽電池ストリングの製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006048823A JP4974545B2 (ja) | 2006-02-24 | 2006-02-24 | 太陽電池ストリングの製造方法 |
US11/706,400 US20070199592A1 (en) | 2006-02-24 | 2007-02-15 | Solar cell string and solar cell module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006048823A JP4974545B2 (ja) | 2006-02-24 | 2006-02-24 | 太陽電池ストリングの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007227786A JP2007227786A (ja) | 2007-09-06 |
JP4974545B2 true JP4974545B2 (ja) | 2012-07-11 |
Family
ID=38442857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006048823A Expired - Fee Related JP4974545B2 (ja) | 2006-02-24 | 2006-02-24 | 太陽電池ストリングの製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20070199592A1 (ja) |
JP (1) | JP4974545B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2010007946A1 (ja) * | 2008-07-16 | 2012-01-05 | 三菱電機株式会社 | インターコネクタおよび太陽電池装置 |
JP5570736B2 (ja) * | 2009-02-06 | 2014-08-13 | シャープ株式会社 | 化合物半導体太陽電池の製造方法 |
JP5215284B2 (ja) | 2009-12-25 | 2013-06-19 | シャープ株式会社 | 多接合型化合物半導体太陽電池 |
TWI440196B (zh) * | 2011-07-12 | 2014-06-01 | Au Optronics Corp | 背電極太陽能電池模組及其電極焊接方法 |
KR102124520B1 (ko) | 2013-10-29 | 2020-06-18 | 엘지전자 주식회사 | 태양 전지 모듈 및 그 제조 방법 |
JP2015211154A (ja) * | 2014-04-28 | 2015-11-24 | パナソニックIpマネジメント株式会社 | 光起電力装置、それを用いた太陽電池構造体および太陽電池構造体の製造方法 |
JP6399990B2 (ja) * | 2015-09-28 | 2018-10-03 | 株式会社豊田自動織機 | インターコネクタ及びソーラーパネル |
JP6509159B2 (ja) * | 2016-04-28 | 2019-05-08 | 株式会社豊田自動織機 | インターコネクタ及びソーラーパネル |
US11495701B2 (en) * | 2020-05-26 | 2022-11-08 | The Boeing Company | Conductive interconnect for connecting adjacent solar cells in a solar cell assembly |
EP3937259A1 (de) * | 2020-07-10 | 2022-01-12 | AZUR SPACE Solar Power GmbH | Monolithische metamorphe mehrfachsolarzelle |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3527619A (en) * | 1968-04-15 | 1970-09-08 | Itek Corp | Solar cell array |
JPS6216579A (ja) * | 1985-07-15 | 1987-01-24 | Sharp Corp | 太陽電池インタ−コネクタ |
JP2548820B2 (ja) * | 1990-03-29 | 1996-10-30 | 三菱電機株式会社 | Si基板上化合物半導体光電変換素子 |
JP2971299B2 (ja) * | 1992-09-08 | 1999-11-02 | シャープ株式会社 | インターコネクタおよびインターコネクタ付電子デバイス素子 |
US6034322A (en) * | 1999-07-01 | 2000-03-07 | Space Systems/Loral, Inc. | Solar cell assembly |
JP4137415B2 (ja) * | 2000-11-21 | 2008-08-20 | シャープ株式会社 | 太陽電池セルの交換方法 |
JP4526223B2 (ja) * | 2001-06-29 | 2010-08-18 | シャープ株式会社 | 配線部材ならびに太陽電池モジュールおよびその製造方法 |
JP2005251960A (ja) * | 2004-03-04 | 2005-09-15 | Mitsubishi Electric Corp | 太陽電池パネルの修理方法及びその製造方法 |
JP2005012241A (ja) * | 2004-09-27 | 2005-01-13 | Sharp Corp | 太陽電池セルの製造方法及び太陽電池セル |
-
2006
- 2006-02-24 JP JP2006048823A patent/JP4974545B2/ja not_active Expired - Fee Related
-
2007
- 2007-02-15 US US11/706,400 patent/US20070199592A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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US20070199592A1 (en) | 2007-08-30 |
JP2007227786A (ja) | 2007-09-06 |
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