JP4969510B2 - Electronic component mounting apparatus and bonding failure detection method - Google Patents

Electronic component mounting apparatus and bonding failure detection method Download PDF

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JP4969510B2
JP4969510B2 JP2008116521A JP2008116521A JP4969510B2 JP 4969510 B2 JP4969510 B2 JP 4969510B2 JP 2008116521 A JP2008116521 A JP 2008116521A JP 2008116521 A JP2008116521 A JP 2008116521A JP 4969510 B2 JP4969510 B2 JP 4969510B2
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electronic component
temperature
bonding
substrate
thermometer
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JP2009267178A (en
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亮 藤田
直人 細谷
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Supply And Installment Of Electrical Components (AREA)
  • Wire Bonding (AREA)

Description

本発明は、例えば半導体ベアチップ、電子回路のパッケージ等の電子部品を基板に装着するための電子部品実装装置及び接合不良検出方法に関する。   The present invention relates to an electronic component mounting apparatus and a bonding failure detection method for mounting electronic components such as a semiconductor bare chip and an electronic circuit package on a substrate.

従来の電子部品の接合中に接合温度を測定する機能を備えた電子部品実装装置としては、ＩＣ上にワイヤーボンディングにてワイヤーを形成する際に、そのＩＣ表面の温度を測定することができるものがあった。   As an electronic component mounting apparatus having a function of measuring the bonding temperature during bonding of conventional electronic components, when forming a wire on the IC by wire bonding, the temperature of the IC surface can be measured was there.

図８は、従来の電子部品実装装置の構成を示す図である。
従来の方法は、図８に示すように、ヒートブロック１０４の上に基板１０７とＩＣ等の半導体部品１０８を設置し、さらに、このヒートブロック１０４を温めることで半導体部品１０８を加熱する。そして、熱電対１０６の出力を受けて温度調節器１０５にてヒートブロック１０４に内蔵されるヒーター１０３の温度を制御し、ヒートブロック１０４の温度を一定に保ち、ワイヤーボンディングヘッド１０２にてボンディング処理をする。このとき、半導体部品１０８の表面温度を、赤外線検出素子を内蔵する非接触型温度計１１２にて直接測定し、温度が一定値以下のとき、出力機器１１３から異常信号が発生するというものである（例えば、特許文献１参照）。
特開２０００−１２５９７ FIG. 8 is a diagram showing a configuration of a conventional electronic component mounting apparatus.
In the conventional method, as shown in FIG. 8, a substrate 107 and a semiconductor component 108 such as an IC are placed on a heat block 104, and the heat block 104 is heated to heat the semiconductor component 108. Then, the output of the thermocouple 106 is received, the temperature controller 105 controls the temperature of the heater 103 built in the heat block 104, the temperature of the heat block 104 is kept constant, and the wire bonding head 102 performs the bonding process. To do. At this time, the surface temperature of the semiconductor component 108 is directly measured by the non-contact type thermometer 112 incorporating the infrared detection element, and when the temperature is below a certain value, an abnormal signal is generated from the output device 113. (For example, refer to Patent Document 1).
JP 2000-12597

しかしながら、前記従来の構成では、基板及びＩＣを常に一定の温度に保ち、１点ずつワイヤーを形成する場合に限っては有効であるが、ＩＣが備える複数電極を同時に接着し、かつ、接着シートを低温から加熱することにより溶融させ、さらに高温を維持することで凝固させるといった温度変化を伴うプロセスで接合される場合、接合部、特に電極部での温度の均一性、安定性が重要となる。さらに、接合時間が数十秒に及ぶ長時間である場合、それぞれの電極での温度の時間変化の把握も重要となってくる。このように、複数電極に対して温度均一性が保障されない対象の場合には、接合品質を確認することは前記従来の構成では不十分であり、さらに、接合中の時間的温度変化が重要であるプロセスに対して、時間的制約の無い一定値の閾値で変化を検出する事は不可能であった。   However, the conventional configuration is effective only when the substrate and the IC are always kept at a constant temperature and the wires are formed one by one. When joining in a process that involves temperature changes, such as melting by heating from a low temperature and solidifying by maintaining a high temperature, temperature uniformity and stability at the joint, especially the electrode, are important. . Furthermore, when the joining time is a long time of several tens of seconds, it is important to grasp the temporal change in temperature at each electrode. As described above, in the case where the temperature uniformity is not ensured for a plurality of electrodes, it is not sufficient to confirm the bonding quality with the above-described conventional configuration, and further, the temporal temperature change during bonding is important. It was impossible to detect a change for a certain process with a constant threshold value without time constraints.

本発明は、前記従来の課題を解決するもので、同時に複数電極を接合する電子部品実装において、複数電極に対して温度均一性が保障されない対象であっても、接合不良を検出できる電子部品実装装置及び接合不良検出方法を提供することを目的とする。   The present invention solves the above-described conventional problem, and in electronic component mounting for simultaneously bonding a plurality of electrodes, even when the temperature uniformity is not guaranteed for the plurality of electrodes, the electronic component mounting capable of detecting a bonding failure An object of the present invention is to provide a device and a bonding failure detection method.

前記目的を達成するために、本発明の電子部品実装装置は、電子部品に形成された複数の電極と基板に形成された複数の電極とを加圧加熱により同時に接合して前記基板に１または複数の前記電子部品を実装する電子部品実装装置であって、赤外光を透過し、その上面に前記基板及び前記電子部品を搭載するステージと、前記ステージ上で前記電子部品及び前記基板を加圧するツールを有する加圧ヘッドと、前記ステージと前記ツールの少なくとも一方を加熱する加熱機構と、前記ステージと前記加圧ヘッドによる接合荷重を検出する加圧力センサと、前記ステージを透過した赤外光を検出して実装中の複数の接合箇所の温度を同時に測定する事ができる１または複数の温度計と、測定した前記温度から接合不良を検出する不良検出機構と、前記加圧力センサにて検出する接合中の前記接合加重により、前記温度計の検出タイミングを制御する制御部とを備えることを特徴とする。 In order to achieve the above object, an electronic component mounting apparatus according to the present invention is configured such that a plurality of electrodes formed on an electronic component and a plurality of electrodes formed on a substrate are simultaneously bonded to each other by pressure heating. An electronic component mounting apparatus for mounting a plurality of the electronic components, the stage transmitting infrared light and mounting the substrate and the electronic component on an upper surface thereof, and adding the electronic component and the substrate on the stage A pressure head having a pressing tool, a heating mechanism for heating at least one of the stage and the tool, a pressure sensor for detecting a bonding load by the stage and the pressure head, and infrared light transmitted through the stage and one or more thermometers the temperatures of a plurality of joints in the implemented detection can be measured simultaneously, and failure detection mechanism for detecting a bonding failure from measured the temperature, Serial by the bonding weighted in the bonding of detecting at pressure sensor, characterized in that it comprises a control unit for controlling detection timing of the thermometer.

また、前記温度計を複数個所に設置可能な温度計ホルダを有しても良い。 It is also possible to have a locatable thermometer holder the thermometer double several places.

また、前記温度計が、位置調整機構を備えるホルダによって固定されても良い。 Further, the thermometer may be secured by a holder having a position adjusting mechanism.

また、前記温度計が、点測定が可能であっても良い。
また、前記温度計が、放射温度計であっても良い。 In addition, the temperature gauge, may be I can der point measurement.
In addition, the temperature gauge, may I radiation thermometer der.

また、前記温度計が、赤外線カメラであっても良い。 In addition, the temperature gauge, may it infrared camera der.

さらに、本発明の接合不良検出方法は、電子部品に形成された複数の電極と基板に形成された複数の電極とを加圧加熱により同時に接合して前記基板に１または複数の前記電子部品を実装する際の接合不良検出方法であって、加圧加重を測定して加圧開始時を検出する工程と、前記加圧開始時から任意の時間経過後に複数の接合箇所の温度を同時に測定する工程と、いずれかの前記接合箇所の前記温度があらかじめ定めた閾値温度の範囲外になった場合に接合不良と判定する工程とを有することを特徴とする。 Further, in the bonding failure detection method of the present invention, the plurality of electrodes formed on the electronic component and the plurality of electrodes formed on the substrate are simultaneously bonded by pressure heating to attach one or more of the electronic components to the substrate. A method for detecting a bonding failure when mounting, a step of measuring the pressure load and detecting the start of pressurization, and simultaneously measuring the temperatures of a plurality of joints after an arbitrary time has elapsed from the start of pressurization And a step of determining a bonding failure when the temperature at any of the bonding points is outside a predetermined threshold temperature range.

本構成によって、同時に複数電極を接合する電子部品実装において、複数電極に対して温度均一性が保障されない対象であっても、接合時間に拘束されずに連続的に、複数箇所の接合温度を同時に測定することにより、接合不良を検出することができる。   With this configuration, in electronic component mounting that joins multiple electrodes at the same time, even if the temperature uniformity is not guaranteed for multiple electrodes, the bonding temperature at multiple locations can be continuously measured simultaneously without being constrained by the bonding time. By measuring, a bonding failure can be detected.

以上のように、本発明の電子部品実装装置によれば、複数電極を有する基板と複数電極を有するＩＣを加熱加圧接合する過程において、任意の複数位置の基板下面温度を測定できるため、接合中に接合不良を精度良く検知することが可能である。また、複数ＩＣを同時に圧着するような場合にも個別に接合状態を把握することが可能となり、接合中に接合不良を精度良く検知することが可能である。   As described above, according to the electronic component mounting apparatus of the present invention, it is possible to measure the substrate lower surface temperature at any plurality of positions in the process of heat-pressure bonding of a substrate having a plurality of electrodes and an IC having a plurality of electrodes. It is possible to detect a bonding failure with high accuracy. Further, even when a plurality of ICs are simultaneously crimped, it is possible to grasp the bonding state individually, and it is possible to detect a bonding failure with high accuracy during bonding.

本発明の電子部品実装装置は、基板に部品を加熱加圧することにより接合して実装する際に、複数の接合箇所の温度を同時に測定することができる温度計を備えることを特徴とする。この時、温度計としては、放射温度計や赤外線カメラまたは温度センサ等を用いることができ、赤外線を透過可能なステージを介して複数の接合箇所の温度を同時に測定する。温度計は測定箇所の数に応じて複数設けても良いし、複数の箇所を同時に測定できる１つの温度計を用いても良い。そして、複数の接合箇所の温度を同時に連続的に測定することで、接合中に接合不良の発生を検出することができる。また、さらに加圧センサを設けることにより、加圧開始時を検出し、加圧開始時から一定時間経過後の温度が、あらかじめ定めた閾値温度の範囲外になったことを検出して接合不良を判定することもできる。   The electronic component mounting apparatus according to the present invention includes a thermometer that can simultaneously measure the temperatures of a plurality of bonding points when the components are bonded and mounted on the substrate by heating and pressing. At this time, as the thermometer, a radiation thermometer, an infrared camera, a temperature sensor, or the like can be used, and the temperatures of a plurality of joints are simultaneously measured through a stage that can transmit infrared rays. A plurality of thermometers may be provided according to the number of measurement locations, or a single thermometer that can measure a plurality of locations simultaneously may be used. And it is possible to detect the occurrence of bonding failure during bonding by continuously measuring the temperature of a plurality of bonding points simultaneously. In addition, a pressurization sensor is provided to detect the start of pressurization, detect that the temperature after a certain period of time has elapsed from the start of pressurization is outside the predetermined threshold temperature range, and cause poor bonding Can also be determined.

このように、複数の接合箇所の温度を同時に測定することができる温度計を備えることにより、接合時間に拘束されずに連続的に、複数箇所の接合温度を同時に測定することができるため、部品実装時に接合不良を高精度に検出することができる。また、加圧センサを同時に用いることにより、温度測定タイミングを制御でき、接合時間に拘束されずに、複数箇所の接合温度を同時に測定することができるため、部品実装時に接合不良を高精度に検出することができる。   In this way, by providing a thermometer that can measure the temperature of a plurality of joints at the same time, it is possible to continuously measure the joint temperature of a plurality of parts simultaneously without being constrained by the joining time. Bonding defects can be detected with high accuracy during mounting. Also, by using the pressure sensor at the same time, the temperature measurement timing can be controlled and the bonding temperature at multiple locations can be measured simultaneously without being constrained by the bonding time. can do.

以下、本発明の電子部品実装装置及び接合不良検出方法における各実施の形態について、図を参照しながら詳細に説明する。
（実施の形態１）
まず、実施の形態１の電子部品実装装置について、図１〜図５を参照しながら説明する。 Hereinafter, embodiments of the electronic component mounting apparatus and the bonding failure detection method of the present invention will be described in detail with reference to the drawings.
(Embodiment 1)
First, the electronic component mounting apparatus according to the first embodiment will be described with reference to FIGS.

図１は、本発明の電子部品実装装置の構成を示す図である。図２は、本発明でのＩＣ接合方法を示す工程図、図３は、本発明でのＩＣ電極配置を示す図、図４は、本発明の異常状態を検出するためにスペーサを入れた実装状態を示す図、図５は、実装時における接合部温度及び加圧力センサ検出値を示す図である。   FIG. 1 is a diagram showing a configuration of an electronic component mounting apparatus according to the present invention. 2 is a process diagram showing an IC bonding method according to the present invention, FIG. 3 is a diagram showing an IC electrode arrangement according to the present invention, and FIG. 4 is a mounting with a spacer for detecting an abnormal state of the present invention. FIG. 5 is a diagram illustrating a state, and FIG. 5 is a diagram illustrating a junction temperature and a pressure sensor detection value during mounting.

本実施の形態では、まず赤外光を透過可能なステージ９を備え、その上方に、基板８及びＩＣ７等の部品を加熱加圧するためのツール４と、ツール４を加熱するためのヒーター５ａと、ＩＣ接触面に近いツール下面付近に、ツール温度を測定するための熱電対５ｂを備え、熱電対５ｂから出力される温度でツール温度を設定温度に保つようにヒーター５ａへの出力を調節する温度調節器５ｃを備え、ツール４の上方にツール４の平行度を調節することのできる平行調節機構３と、ＩＣ加圧時にその加圧力を測定できるような加圧力センサ１を備え、さらに加圧動作やメンテナンスの為にヘッドをステージ上面に対して垂直方向に駆動させることのできるガイド２ａを備えている。ここで、ヒーター５ａと熱電対５ｂと温度調節器５ｃとで加熱機構５を構成する。   In the present embodiment, first, a stage 9 that can transmit infrared light is provided, and a tool 4 for heating and pressurizing components such as the substrate 8 and the IC 7 and a heater 5a for heating the tool 4 are provided above the stage 9. A thermocouple 5b for measuring the tool temperature is provided near the lower surface of the tool near the IC contact surface, and the output to the heater 5a is adjusted so that the tool temperature is maintained at the set temperature by the temperature output from the thermocouple 5b. A temperature adjustment unit 5c is provided, a parallel adjustment mechanism 3 that can adjust the parallelism of the tool 4 above the tool 4, and a pressure sensor 1 that can measure the pressure when the IC is pressurized. A guide 2a is provided that can drive the head in a direction perpendicular to the upper surface of the stage for pressure operation and maintenance. Here, the heating mechanism 5 is comprised by the heater 5a, the thermocouple 5b, and the temperature regulator 5c.

複数電極を有する基板８と、その上に電極位置を合せて仮圧着されたＩＣ７がステージ９上に配置され、その上に保護テープ６を設置する。
温度センサとして、ステージ下方に複数かつ任意のステージ上面付近の温度測定可能な状態で放射温度計１０を固定できるように位置調整機構を備えた温度計ホルダ１１が取り付けられており、そのホルダ１１にステージ９の透過可能な赤外波長領域で温度測定が可能で、スポットで温度測定可能な放射温度計１０を基板裏面に焦点を合せた状態で固定されている。 A substrate 8 having a plurality of electrodes and an IC 7 that is temporarily pressure-bonded on the substrate 8 are arranged on a stage 9 and a protective tape 6 is placed thereon.
As a temperature sensor, a thermometer holder 11 having a position adjustment mechanism is attached below the stage so that the radiation thermometer 10 can be fixed in a state in which a plurality of temperatures can be measured near the upper surface of the stage. A temperature can be measured in the infrared wavelength region where the stage 9 can be transmitted, and a radiation thermometer 10 capable of measuring a temperature at a spot is fixed in a state of being focused on the back surface of the substrate.

この接合対象の例として、図２に示す方法で接合された対象を用いる。
図２において、まず、前記基板８上に粘着性のある絶縁シート１２を貼り付ける。この絶縁シート１２は、ＩＣ実装位置をカバーする程度のサイズにする。また、ＩＣ７には別の装置を用いて電極にバンプ７１を形成する。その後、絶縁シート１２を貼り付けた前記基板８上に、バンプ７１を形成した前記ＩＣ７のバンプ位置と基板電極位置を精確に位置合せし、仮圧着を行う。 As an example of this bonding target, a target bonded by the method shown in FIG. 2 is used.
In FIG. 2, first, an adhesive insulating sheet 12 is stuck on the substrate 8. The insulating sheet 12 is sized to cover the IC mounting position. In addition, bumps 71 are formed on the electrodes of the IC 7 using another device. Thereafter, the bump position of the IC 7 on which the bump 71 is formed and the substrate electrode position are accurately aligned on the substrate 8 to which the insulating sheet 12 has been attached, and temporary bonding is performed.

その後、本発明である電子部品実装装置の平行調整機構３にてステージ９とツール４の平行度を規定値以下になるまで調整された状態で、前記ＩＣ７が仮圧着済みの基板８をステージ９上に設置する。そして、前記ＩＣ７とツール４との間に保護テープ６を配置する。その後、ツール４に搭載されている加熱機構５にて、ツール４を一定温度に加熱しておき、その加熱されたツール４をステージ上面に対して垂直に下降させ、保護テープ６を介してＩＣ７及び基板８に加圧させ、接合部を加熱加圧する。   Thereafter, the substrate 8 on which the IC 7 has been pre-bonded is mounted on the stage 9 in a state where the parallelism between the stage 9 and the tool 4 is adjusted to a specified value or less by the parallel adjustment mechanism 3 of the electronic component mounting apparatus according to the present invention. Install on top. A protective tape 6 is arranged between the IC 7 and the tool 4. Thereafter, the tool 4 is heated to a constant temperature by the heating mechanism 5 mounted on the tool 4, the heated tool 4 is lowered vertically with respect to the upper surface of the stage, and the IC 7 is connected via the protective tape 6. Then, the substrate 8 is pressurized, and the bonded portion is heated and pressurized.

絶縁シート１２は、常温では粘性が高く、常温以上のある温度以下で粘性が下がり、その温度よりも高温のある一定温度以上を維持すると硬化する特性がある。その為、加熱加圧直後はシートが常温から温度が上昇することで一旦粘性が下がり、基板電極８１とＩＣ電極間の絶縁シート１２がＩＣの外へ流れ出る事からＩＣ７と基板８間の距離が縮まり、ＩＣ７に形成されたバンプ先端が高温状態で潰れ、バンプ面と基板電極面が接触する。その後、さらに加熱加圧状態を続ける事でＩＣ７に形成されたバンプ７１と基板電極８１が接触した状態で絶縁シート１２が硬化し、強固に接合が完了する。   The insulating sheet 12 is highly viscous at room temperature, has a property of decreasing in viscosity below a certain temperature above room temperature, and is cured when maintained at a certain temperature higher than that temperature. For this reason, immediately after heating and pressing, the viscosity of the sheet decreases as the temperature rises from room temperature, and the insulating sheet 12 between the substrate electrode 81 and the IC electrode flows out of the IC. As a result, the bump tip formed on the IC 7 is crushed at a high temperature, and the bump surface and the substrate electrode surface come into contact with each other. Thereafter, the insulating sheet 12 is cured in a state where the bumps 71 formed on the IC 7 and the substrate electrode 81 are in contact with each other by continuing the heating and pressurizing state, and the bonding is firmly completed.

このような過程で接合を行う工法において接合品質を把握するには、基板電極部の温度及び絶縁シート温度の分布及び時間変化が重要となる。その為、温度の分布について、時間的な判断基準をもって異常判定を行う測定系が必要となる。   In order to grasp the bonding quality in the method of bonding in such a process, the distribution of the temperature of the substrate electrode part and the temperature of the insulating sheet and the change over time are important. Therefore, it is necessary to have a measurement system that makes an abnormality determination based on a temporal determination criterion for the temperature distribution.

次に、ＩＣにおける電極の配置を図３に示し、図４を用いて実装時の温度測定及び接合不良検出について説明する。本実施の形態では、ＩＣサイズが一辺約２０ｍｍの正方形であるＩＣを例に説明する。   Next, the arrangement of the electrodes in the IC is shown in FIG. 3, and temperature measurement and bonding failure detection during mounting will be described with reference to FIG. In the present embodiment, an IC having an IC size of a square having a side of about 20 mm will be described as an example.

図３に示すように、ＩＣ７ａ上のＩＣ外形辺付近にＩＣ外形に沿って電極７ａ０が並んでいる。これら電極７ａ０の上にそれぞれバンプを形成する。
実装時には、図４に示すように、前記バンプを形成したＩＣ７ａを上下反転させ、前記基板８上に高精度に位置決めした状態で仮圧着した基板８を本発明の電子部品実装装置のステージ９上に設置し、加熱加圧時に絶縁シート１２が溶け出してツール４に焼きつく事の無いようにＩＣ７ａの上に保護テープ６を配置する。その後、前記加熱機構５にて一定温度に保たれた加圧ツールをステージ９に対して垂直に下降させ、加圧を行う。 As shown in FIG. 3, electrodes 7a0 are arranged along the IC outline in the vicinity of the IC outline on the IC 7a. Bumps are formed on these electrodes 7a0.
At the time of mounting, as shown in FIG. 4, the substrate 8 on which the bump 7 is formed is flipped upside down and temporarily bonded in a state of being positioned on the substrate 8 with high accuracy, on the stage 9 of the electronic component mounting apparatus of the present invention. The protective tape 6 is placed on the IC 7a so that the insulating sheet 12 does not melt and burn onto the tool 4 during heating and pressurization. Thereafter, the pressurizing tool maintained at a constant temperature by the heating mechanism 5 is lowered vertically with respect to the stage 9 to perform pressurization.

この加熱加圧中に放射温度計１０を用いて接合箇所の温度測定を行うことにより、不良検出機構（図示せず）を用いて、周囲の接合箇所に対して温度の低い箇所や、あらかじめ定めた閾値温度より低い箇所を接合不良箇所と判定して検出する。ここで、温度計１０としては、１つの接合箇所の温度を測定可能な温度計を複数用いても良いし、複数の接合箇所の温度を同時に測定可能な温度計を用いても良い。   By measuring the temperature of the joint portion using the radiation thermometer 10 during this heating and pressurization, using a defect detection mechanism (not shown), a location where the temperature is low relative to the surrounding joint portion or a predetermined position is determined. A portion lower than the threshold temperature is determined as a joint failure portion and detected. Here, as the thermometer 10, a plurality of thermometers capable of measuring the temperature of one joint location may be used, or a thermometer capable of simultaneously measuring the temperatures of the plurality of joint locations may be used.

また、接合不良の検出の際に、加圧センサ１により検出した加圧力を用いて制御部（図示せず）にて温度測定タイミングを決定することができ、この場合には連続的に温度を測定する必要がなくなる。   In addition, when detecting a bonding failure, the control unit (not shown) can determine the temperature measurement timing using the pressure detected by the pressure sensor 1, and in this case, the temperature is continuously measured. No need to measure.

このように、接合中の温度を測定することにより、部品実装時の接合不良を高精度に検出することができる。
次に、測定温度とあらかじめ定めた閾値温度を比較することにより接合不良を検出する方法を説明する。 Thus, by measuring the temperature during bonding, it is possible to detect a bonding failure at the time of component mounting with high accuracy.
Next, a method for detecting a bonding failure by comparing the measured temperature with a predetermined threshold temperature will be described.

正常状態と異常状態での温度状態の差を確認するために、まず、正常状態での接合部温度測定を行う。このとき、放射温度計１０でステージ下方より基板裏面の温度を測定する。測定点は図３に示す温度測定位置７ａ１〜７ａ９の９箇所である。次に、異常状態の確認を行う。異常状態を想定して、一定厚のスペーサ１３を前記仮圧着後のＩＣ７ａ上に設置し、加圧を行う。ここでは、異物を想定して、厚さ約０．１ｍｍ程度のスペーサ１３を用意し、温度測定位置７ａ１〜７ａ３が設定された辺に設置する。このとき、スペーサ１３を入れない状態と同様に９点測定を行うと、スペーサの有無で温度に差が生じる。そこで、これらのデータの比較を行う。   In order to confirm the difference in temperature state between the normal state and the abnormal state, first, the junction temperature in the normal state is measured. At this time, the temperature of the back surface of the substrate is measured from below the stage with the radiation thermometer 10. The measurement points are nine temperature measurement positions 7a1 to 7a9 shown in FIG. Next, the abnormal state is confirmed. Assuming an abnormal state, a spacer 13 having a constant thickness is placed on the IC 7a after the temporary pressure bonding and pressurization is performed. Here, assuming a foreign substance, a spacer 13 having a thickness of about 0.1 mm is prepared and installed on the side where the temperature measurement positions 7a1 to 7a3 are set. At this time, if the nine-point measurement is performed in the same manner as in the state where the spacer 13 is not inserted, a difference in temperature occurs depending on the presence or absence of the spacer. Therefore, these data are compared.

実装時の温度上昇は、図５（ａ）で示されるような曲線となる。横軸が時間、縦軸が測定された温度であり、実線が正常状態の温度、破線が異常状態の温度である。スペーサ１３が入ると、ツール４からの熱が伝わりにくい箇所の温度が下がるか、もしくは温度上昇が遅れる。その為、正常状態の温度との比較を行い、異常であるか判定を行う。このとき、一定温度に閾値を設けても良いが、温度差が大きいのは図５（ａ）のＡ領域、加圧開始直後であるため、加圧力センサで加圧開始タイミングを監視し、加圧開始から一定時間経過後のＡ領域での温度を比較し閾値を設ける方が、異常状態の判定をはるかに正確に行う事が可能である。このときの加圧力センサの波形を図５（ｂ）に示す。この波形からもわかるように、加圧力がある一定値以上になったときに加圧を開始したと判定することで、加圧開始の時間を判断できる。具体的な異常検出の仕組みを以下に説明する。   The temperature rise at the time of mounting becomes a curve as shown in FIG. The horizontal axis is the time, the vertical axis is the measured temperature, the solid line is the normal temperature, and the broken line is the abnormal temperature. When the spacer 13 is inserted, the temperature of the portion where the heat from the tool 4 is difficult to be transmitted decreases or the temperature increase is delayed. Therefore, it is compared with the temperature in the normal state to determine whether it is abnormal. At this time, a threshold value may be set at a constant temperature. However, since the temperature difference is large in the A region of FIG. 5A immediately after the start of pressurization, the pressurization start timing is monitored by the pressurization sensor, It is possible to determine the abnormal state much more accurately by comparing the temperatures in the A region after a certain time has elapsed from the start of the pressure and setting a threshold value. The waveform of the pressure sensor at this time is shown in FIG. As can be seen from this waveform, it is possible to determine the pressurization start time by determining that pressurization has started when the applied pressure becomes a certain value or more. A specific abnormality detection mechanism will be described below.

まず、加圧開始後に加圧力センサが反応し、その時点で制御部へ信号を送る。すると、制御部はある設定された値であるΔｔ秒後に温度センサの温度を検知し、その時点で不良検出機構により設定された閾値である温度Ｔ０と比較することで異常判定を行う。このときの正常状態と異常状態の温度差ΔＴは、Ｂ領域よりもはるかに大きいため、この時点での方がはるかに接合異常の判定を高精度に行う事ができる。この加圧力センサによる加圧タイミング検出併用方式を含めた状態で、異常状態の判定がＩＣ中心部、図３の７ａ５で可能である場合、放射温度計１０は７ａ５の箇所１箇所のみに設置し、生産中の異常を検出する。また、７ａ５のみでは不可能である場合、例えば７ａ１と７ａ９の２箇所、７ａ１、７ａ３、７ａ７、７ａ９の４箇所など、複数個所について同時に温度を測定することにより接合不良を検知することができる。   First, the pressure sensor reacts after the start of pressurization, and sends a signal to the control unit at that time. Then, the control unit detects the temperature of the temperature sensor after Δt seconds, which is a set value, and performs abnormality determination by comparing with the temperature T0 that is a threshold set by the defect detection mechanism at that time. Since the temperature difference ΔT between the normal state and the abnormal state at this time is much larger than that in the region B, it is possible to determine the bonding abnormality much more accurately at this point. When the abnormal state can be determined at the center of the IC, 7a5 in FIG. 3, including the pressure timing detection combined method using the pressure sensor, the radiation thermometer 10 is installed only at one location 7a5. Detecting abnormalities during production. Further, when it is impossible with 7a5 alone, for example, joint failure can be detected by measuring the temperature at a plurality of locations simultaneously, such as two locations 7a1 and 7a9 and four locations 7a1, 7a3, 7a7 and 7a9.

実際に想定される接合不良要因としては、ステージ−基板間、基板−ＩＣ間、ＩＣ−保護テープ間、保護テープ−ツール間などへのダストなど異物のかみこみや、前記保護テープずれによって絶縁シートの一部がツール端に焼きつく事などから、ツールやステージ形状が変化し、正常な均一加圧ができなくなる事などがある。この場合、加圧面に異常があれば、熱の伝達に異常をきたし、本発明での電子部品実装装置で不良品を作り続けるという状態を阻止することができる。
（実施の形態２）
次に、実施の形態２の電子部品実装装置及び接合不良検出方法について、図６，図７を参照しながら説明する。 As the cause of bonding failure that is assumed in practice, there is a possibility that the insulating sheet may be caught by foreign matter such as dust between the stage and the substrate, between the substrate and the IC, between the IC and the protective tape, between the protective tape and the tool, or by the displacement of the protective tape. Because part of the tool burns at the end of the tool, the tool or stage shape changes, and normal uniform pressure may not be achieved. In this case, if there is an abnormality in the pressure surface, it is possible to prevent a state in which the heat transfer is abnormal and the electronic component mounting apparatus according to the present invention continues to produce defective products.
(Embodiment 2)
Next, the electronic component mounting apparatus and the bonding failure detection method according to the second embodiment will be described with reference to FIGS.

図６は、実施の形態２における実装時のＩＣ配置を示す図である。また、実施の形態２でのＩＣ電極配置を示す図を図７に示す。
本実施の形態の電子部品実装装置は、１つの基板に複数、図６，図７の例では大小２つのＩＣを実装するものであり、ＩＣとして大きい方のＩＣを７ｂ、小さい方のＩＣを７ｃとする。これらのＩＣ７ｂ，ＩＣ７ｃは基板上に並べて配置され、この２つのＩＣを同時に圧着する必要がある。このように、ＩＣが複数ある場合、２つのＩＣ高さの差が小さく、隣接している場合には、複数ＩＣを同時に接合するほうが効率よく生産可能である。しかし、これらいずれかに接合不良が存在してもその製品は不良品となる為、この１回の接合動作において、２つのＩＣにおける全ての電極の接合状態を把握することが必要となる。 FIG. 6 is a diagram showing an IC arrangement at the time of mounting in the second embodiment. FIG. 7 is a diagram showing the IC electrode arrangement in the second embodiment.
The electronic component mounting apparatus according to the present embodiment mounts a plurality of ICs on one substrate, two large and small ICs in the example of FIGS. 6 and 7, and the larger IC is 7b and the smaller IC is mounted. 7c. These IC7b and IC7c are arranged side by side on the substrate, and it is necessary to press-bond these two ICs simultaneously. Thus, when there are a plurality of ICs, the difference between the heights of the two ICs is small, and when they are adjacent to each other, it is more efficient to join the plurality of ICs simultaneously. However, even if there is a bonding failure in any of these, the product becomes a defective product. Therefore, in this single bonding operation, it is necessary to grasp the bonding state of all the electrodes in the two ICs.

ここでは、温度計として１つの接合箇所の温度を測定可能な温度計を複数用いた場合を例に説明する。
異常検出に当たっては、実施の形態１と同様に、接合状態を把握可能な代表点を選ぶ為に、それぞれのＩＣに対して、前記実施の形態１にて記載されている方法と同様に一度正常状態で測定を行い、代表点を抽出する。その結果、電極位置などを考慮し、図６及び図７に記載の温度測定位置７ｂ１、７ｂ２、７ｃ１の３点を測定する事となった場合、複数個所、具体的には３箇所に放射温度計を設置して、それぞれを同時に測定することにより、どちらか片方のＩＣのみに異常が生じた場合であっても異常検出を行う事ができる。 Here, a case where a plurality of thermometers capable of measuring the temperature at one joint location is used as a thermometer will be described as an example.
When detecting an abnormality, as in the first embodiment, in order to select a representative point capable of grasping the bonding state, each IC is once normal as in the method described in the first embodiment. Measure in the state and extract representative points. As a result, in consideration of the electrode position, etc., when the three temperature measurement positions 7b1, 7b2, and 7c1 shown in FIGS. 6 and 7 are measured, the radiation temperature is measured at a plurality of positions, specifically at three positions. By installing a meter and measuring each simultaneously, it is possible to detect an abnormality even when an abnormality occurs in only one of the ICs.

このように、複数の放射温度計を任意の位置に設置できることで、複数のＩＣを同時に圧着するときにも、接合不良検出を正確に行う事ができる。
尚、上記説明では、基板にＩＣを接合する場合を例に説明したが、その他の電子部品等の部品を加熱により基板等に接合する部品実装に用いることも可能である。また、温度を測定する温度計として、コスト面より放射温度計を１または複数点設置する事としたが、測定系の空間分解能、時間分解能、精度、コストが許容範囲内であるならば、赤外線カメラで同様に複数個所の温度を測定することができる。 As described above, since a plurality of radiation thermometers can be installed at arbitrary positions, it is possible to accurately detect a bonding failure even when a plurality of ICs are simultaneously crimped.
In the above description, the case where an IC is bonded to a substrate has been described as an example. However, other components such as electronic components can be used for component mounting that is bonded to a substrate or the like by heating. In addition, as a thermometer for measuring temperature, one or more radiation thermometers are installed from the viewpoint of cost. However, if the spatial resolution, time resolution, accuracy, and cost of the measurement system are within an allowable range, infrared radiation is measured. Similarly, the camera can measure the temperature at multiple locations.

また、本発明では、加圧力検出センサをヘッド側に配置しているが、ステージ側に配置してもよい。さらに、本発明では、絶縁性粘着シートを使用したが、これは導電粒子を含むシートや、ペーストでも実施可能である。その際、ＩＣと基板の接合状態を維持できれば、加熱したときにその粘性の変化が起こる必要はない。また、平行調整機構はヘッド側に配置しているが、ステージ側に配置しても構わない。   In the present invention, the pressure detection sensor is disposed on the head side, but may be disposed on the stage side. Furthermore, in the present invention, an insulating pressure-sensitive adhesive sheet is used, but this can also be carried out with a sheet containing conductive particles or a paste. At this time, if the bonding state between the IC and the substrate can be maintained, the viscosity does not need to change when heated. The parallel adjustment mechanism is arranged on the head side, but may be arranged on the stage side.

さらに、上記説明では、ＩＣを基板に仮圧着した後に、本電子部品実装装置にて接合を行ったが、ツールにＩＣ吸着機構を設け、ステージもしくはヘッドを水平方向に移動可能な状態にすることにより、基板のみを本装置に供給し、別途ＩＣを本装置に供給し、ＩＣをヘッドに吸着後に高精度に位置決めを行い、その後加圧加熱により接合を行う事も可能である。   Further, in the above description, the IC is temporarily bonded to the substrate and then joined by the electronic component mounting apparatus. However, an IC suction mechanism is provided in the tool so that the stage or the head can be moved in the horizontal direction. Thus, it is also possible to supply only the substrate to the apparatus, supply an additional IC to the apparatus, position the IC with high accuracy after being attracted to the head, and then perform bonding by pressure heating.

本発明は、接合時間に拘束されずに連続的に、複数箇所の接合温度を同時に測定することにより、接合不良を検出でき、例えば半導体ベアチップ、電子回路のパッケージ等の電子部品を基板に装着するための電子部品実装装置及び接合不良検出方法等に有用である。   The present invention can detect a bonding failure by continuously measuring a bonding temperature at a plurality of locations simultaneously without being constrained by the bonding time. For example, an electronic component such as a semiconductor bare chip or an electronic circuit package is mounted on a substrate. Therefore, it is useful for an electronic component mounting apparatus and a bonding failure detection method.

本発明の電子部品実装装置の構成を示す図The figure which shows the structure of the electronic component mounting apparatus of this invention 本発明でのＩＣ接合方法を示す工程図Process drawing which shows IC joining method in this invention 本発明でのＩＣ電極配置を示す図The figure which shows IC electrode arrangement | positioning in this invention 本発明の異常状態を検出するためにスペーサを入れた実装状態を示す図The figure which shows the mounting state which put the spacer in order to detect the abnormal condition of this invention 実装時における接合部温度及び加圧力センサ検出値を示す図Diagram showing junction temperature and pressure sensor detection value during mounting 実施の形態２における実装時のＩＣ配置を示す図The figure which shows IC arrangement | positioning at the time of mounting in Embodiment 2 実施の形態２でのＩＣ電極配置を示す図The figure which shows IC electrode arrangement | positioning in Embodiment 2. 従来の電子部品実装装置の構成を示す図The figure which shows the structure of the conventional electronic component mounting apparatus

符号の説明Explanation of symbols

１．加圧力センサ
２．ヘッド
２ａ．ガイド
３．平行調整機能
４．ツール
５．加熱機構
５ａ．ヒーター
５ｂ．熱電対
５ｃ．温度調節器
６．保護テープ
７．ＩＣ
７ａ．ＩＣ
７ａ０．電極
７ａ１．温度測定位置
７ａ２．温度測定位置
７ａ３．温度測定位置
７ａ４．温度測定位置
７ａ５．温度測定位置
７ａ６．温度測定位置
７ａ７．温度測定位置
７ａ８．温度測定位置
７ａ９．温度測定位置
７ｂ．ＩＣ
７ｂ１．温度測定位置
７ｂ２．温度測定位置
７ｂ３．温度測定位置
７ｃ．ＩＣ
７ｃ１．実施の形態２で使用するＩＣの温度測定位置
７１．バンプ
８．基板
８１．基板電極
９．ステージ
１０．放射温度計
１１．ホルダ
１２．絶縁シート
１３．スペーサ
１０２．ワイヤーボンディングヘッド
１０３．ヒーター
１０４．ヒートブロック
１０５．温度調節器
１０６．熱電対
１０７．基板
１０８．半導体部品
１１２．非接触型温度計
１１３．出力器（出力手段） 1. Pressure sensor 2. Head 2a. Guide 3. Parallel adjustment function Tool 5. Heating mechanism 5a. Heater 5b. Thermocouple 5c. Temperature controller 6. Protective tape IC
7a. IC
7a0. Electrode 7a1. Temperature measurement position 7a2. Temperature measurement position 7a3. Temperature measurement position 7a4. Temperature measurement position 7a5. Temperature measurement position 7a6. Temperature measurement position 7a7. Temperature measurement position 7a8. Temperature measurement position 7a9. Temperature measurement position 7b. IC
7b1. Temperature measurement position 7b2. Temperature measurement position 7b3. Temperature measurement position 7c. IC
7c1. 71. Temperature measurement position of IC used in Embodiment 2 Bump 8 Substrate 81. Substrate electrode 9. Stage 10. Radiation thermometer 11. Holder 12. Insulating sheet 13. Spacer 102. Wire bonding head 103. Heater 104. Heat block 105. Temperature controller 106. Thermocouple 107. Substrate 108. Semiconductor component 112. Non-contact thermometer 113. Output device (output means)

Claims (7)

電子部品に形成された複数の電極と基板に形成された複数の電極とを加圧加熱により同時に接合して前記基板に１または複数の前記電子部品を実装する電子部品実装装置であって、
赤外光を透過し、その上面に前記基板及び前記電子部品を搭載するステージと、
前記ステージ上で前記電子部品及び前記基板を加圧するツールを有する加圧ヘッドと、
前記ステージと前記ツールの少なくとも一方を加熱する加熱機構と、
前記ステージと前記加圧ヘッドによる接合荷重を検出する加圧力センサと、
前記ステージを透過した赤外光を検出して実装中の複数の接合箇所の温度を同時に測定する事ができる１または複数の温度計と、
測定した前記温度から接合不良を検出する不良検出機構と、
前記加圧力センサにて検出する接合中の前記接合加重により、前記温度計の検出タイミングを制御する制御部と
を備えることを特徴とする電子部品実装装置。 An electronic component mounting apparatus for mounting one or more electronic components on the substrate by simultaneously bonding a plurality of electrodes formed on the electronic component and a plurality of electrodes formed on the substrate by pressure heating,
A stage that transmits infrared light and on which the substrate and the electronic component are mounted;
A pressure head having a tool for pressing the electronic component and the substrate on the stage;
A heating mechanism for heating at least one of the stage and the tool;
A pressure sensor for detecting a bonding load by the stage and the pressure head;
One or a plurality of thermometers capable of detecting the infrared light transmitted through the stage and simultaneously measuring the temperatures of a plurality of joints being mounted;
A defect detection mechanism for detecting a bonding defect from the measured temperature ;
An electronic component mounting apparatus comprising: a control unit that controls detection timing of the thermometer by the bonding weight during bonding detected by the pressure sensor . 前記温度計を複数個所に設置可能な温度計ホルダを有することを特徴とする請求項１記載の電子部品実装装置。 The electronic component mounting apparatus according to claim 1, further comprising a thermometer holder capable of installing the thermometer at a plurality of locations . 前記温度計が、位置調整機構を備えるホルダによって固定されることを特徴とする請求項１または請求項２のいずれかに記載の電子部品実装装置。 The electronic component mounting apparatus according to claim 1, wherein the thermometer is fixed by a holder having a position adjusting mechanism . 前記温度計が、点測定が可能であることを特徴とする請求項３記載の電子部品実装装置。 The thermometer, the electronic component mounting apparatus according to claim 3, wherein the next possible Rukoto a point measurement. 前記温度計が、放射温度計であることを特徴とする請求項１〜請求項３のいずれかに記載の電子部品実装装置。 The thermometer, the electronic component mounting apparatus according to any one of claims 1 to 3, wherein a radiation thermometer der Rukoto. 前記温度計が、赤外線カメラであることを特徴とする請求項１〜請求項４のいずれかに記載の電子部品実装装置。 The thermometer, the electronic component mounting apparatus according to any one of claims 1 to 4, characterized in that an infrared camera. 電子部品に形成された複数の電極と基板に形成された複数の電極とを加圧加熱により同時に接合して前記基板に１または複数の前記電子部品を実装する際の接合不良検出方法であって、
加圧加重を測定して加圧開始時を検出する工程と、
前記加圧開始時から任意の時間経過後に複数の接合箇所の温度を同時に測定する工程と、
いずれかの前記接合箇所の前記温度があらかじめ定めた閾値温度の範囲外になった場合に接合不良と判定する工程と
を有することを特徴とする接合不良検出方法。 A method for detecting a bonding failure when a plurality of electrodes formed on an electronic component and a plurality of electrodes formed on a substrate are simultaneously bonded by pressure heating to mount one or more of the electronic components on the substrate. ,
Measuring the pressurization load and detecting the start of pressurization;
A step of simultaneously measuring the temperature of a plurality of joints after an arbitrary time has elapsed from the start of pressurization;
A step of determining a bonding failure when the temperature at any of the bonding points is outside a predetermined threshold temperature range;
A bonding failure detection method characterized by comprising:
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