JP4951677B2 - ウエハー移送装置 - Google Patents
ウエハー移送装置 Download PDFInfo
- Publication number
- JP4951677B2 JP4951677B2 JP2009553511A JP2009553511A JP4951677B2 JP 4951677 B2 JP4951677 B2 JP 4951677B2 JP 2009553511 A JP2009553511 A JP 2009553511A JP 2009553511 A JP2009553511 A JP 2009553511A JP 4951677 B2 JP4951677 B2 JP 4951677B2
- Authority
- JP
- Japan
- Prior art keywords
- blade
- wafer
- electrode
- wafer transfer
- transfer apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 239000011247 coating layer Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000005060 rubber Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004148 unit process Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Manipulator (AREA)
Description
ぐ。
Claims (7)
- ウエハーを支持するためのセラミックブレードと、
前記ブレード内部に備えられ、前記ウエハーを吸着するための静電気力を発生する電源が印加される電極と、
前記ブレードの上部面に備えられ、前記ブレード上においてのウエハー流動を抑制するために前記ウエハーとの間で摩擦力を提供する複数のパッドと、
前記ブレードと接続され、前記ブレードを移動させるためのロボットアームとを有し、
前記パッドと前記電極との間の、ブレードの上部面と平行な方向における間隔D1が、前記電極の上部面と前記ブレードの上部面との間の、ブレードの上部面に直交する方向における間隔D2より大きいことを特徴とするウエハー移送装置。 - 前記パッドは、シリコン、ポリイミド、ゴムなどを含むことを特徴とする請求項1に記載のウエハー移送装置。
- 前記パッドが配置された部位を除いた前記ブレードの上部面の付近上に備えられるコーティング膜をさらに含むことを特徴とする請求項1に記載のウエハー移送装置。
- 前記コーティング膜は、酸化物、窒化物、酸窒化物などを含むことを特徴とする請求項3に記載のウエハー移送装置。
- 前記コーティング膜は、前記ブレードより高緻密度を有することを特徴とする請求項3に記載のウエハー移送装置。
- 前記コーティング膜は、化学気相蒸着工程、プラズマ強化化学気相蒸着工程、高密度プラズマ化学気相蒸着工程、スパッタ法工程のうちの1つによって形成されることを特徴とする請求項3に記載のウエハー移送装置。
- 前記電極は、正の電源が印加される第1電極と負の電源が印加される第2電極を含むことを特徴とする請求項1に記載のウエハー移送装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0023831 | 2007-03-12 | ||
KR1020070023831A KR101119075B1 (ko) | 2007-03-12 | 2007-03-12 | 웨이퍼 이송 장치 |
PCT/KR2008/001205 WO2008111752A1 (en) | 2007-03-12 | 2008-03-03 | Apparatus for transferring a wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010521072A JP2010521072A (ja) | 2010-06-17 |
JP4951677B2 true JP4951677B2 (ja) | 2012-06-13 |
Family
ID=39759665
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009553511A Active JP4951677B2 (ja) | 2007-03-12 | 2008-03-03 | ウエハー移送装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100104403A1 (ja) |
JP (1) | JP4951677B2 (ja) |
KR (1) | KR101119075B1 (ja) |
CN (1) | CN101663745B (ja) |
WO (1) | WO2008111752A1 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102349145B (zh) * | 2009-01-11 | 2015-05-27 | 应用材料公司 | 用于传送基板的静电末端执行器设备、***和方法 |
WO2012014428A1 (ja) * | 2010-07-27 | 2012-02-02 | 株式会社アルバック | 基板搬送方法および基板搬送システム |
US8953298B2 (en) * | 2011-11-30 | 2015-02-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electrostatic chuck robotic system |
US9276504B2 (en) * | 2012-03-07 | 2016-03-01 | Ngk Spark Plug Co., Ltd. | Carrier device and ceramic member |
KR20140102782A (ko) * | 2013-02-14 | 2014-08-25 | 삼성전자주식회사 | 웨이퍼 이송용 블레이드 및 이를 포함하는 웨이퍼 이송 장치 |
US9487361B2 (en) | 2013-05-17 | 2016-11-08 | Intelligrated Headquarters Llc | Robotic carton unloader |
EP3495293B1 (en) | 2013-05-17 | 2023-05-03 | Intelligrated Headquarters LLC | Robotic carton unloader |
US9650215B2 (en) | 2013-05-17 | 2017-05-16 | Intelligrated Headquarters Llc | Robotic carton unloader |
WO2015013143A1 (en) * | 2013-07-22 | 2015-01-29 | Applied Materials, Inc. | An end effector for transferring a substrate |
WO2015017444A1 (en) | 2013-07-30 | 2015-02-05 | Intelligrated Headquarters Llc | Robotic carton unloader |
US9555982B2 (en) | 2013-08-28 | 2017-01-31 | Intelligrated Headquarters Llc | Robotic carton unloader |
US20150090295A1 (en) * | 2013-09-28 | 2015-04-02 | Applied Materials, Inc. | Apparatus and methods for a mask inverter |
US9623569B2 (en) | 2014-03-31 | 2017-04-18 | Intelligrated Headquarters, Llc | Autonomous truck loader and unloader |
US20150360370A1 (en) * | 2014-06-17 | 2015-12-17 | John Mazzocco | Thin end effector with ability to hold wafer during motion |
US20180016678A1 (en) | 2016-07-15 | 2018-01-18 | Applied Materials, Inc. | Multi-layer coating with diffusion barrier layer and erosion resistant layer |
DE112017004070B4 (de) | 2016-09-14 | 2022-04-28 | Intelligrated Headquarters, Llc | Roboterkartonentlader |
US10597235B2 (en) | 2016-10-20 | 2020-03-24 | Intelligrated Headquarters, Llc | Carton unloader tool for jam recovery |
CN108657819B (zh) * | 2017-03-31 | 2019-10-01 | 京东方科技集团股份有限公司 | 传送装置、传送方法以及真空蒸镀装置 |
CN110277328B (zh) * | 2018-03-15 | 2021-08-13 | 北京北方华创微电子装备有限公司 | 晶片脱附的方法、装置及半导体处理设备 |
US11540432B2 (en) * | 2019-09-26 | 2022-12-27 | Applied Materials, Inc. | Ultrathin conformal coatings for electrostatic dissipation in semiconductor process tools |
US11574837B2 (en) * | 2020-06-12 | 2023-02-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Robot blade having multiple sensors for multiple different alignment tasks |
KR20220147869A (ko) * | 2021-04-28 | 2022-11-04 | 삼성전자주식회사 | 이송 유닛을 갖는 반도체 제조 장치 및 반도체 소자 형성 방법 |
WO2024122025A1 (ja) * | 2022-12-08 | 2024-06-13 | 株式会社日立ハイテク | ウェハ搬送用ハンド、ウェハ交換装置、荷電粒子線装置および真空装置 |
KR102626647B1 (ko) | 2023-07-21 | 2024-01-19 | 주식회사 코닉스 | 웨이퍼 이송용 로봇암의 제조를 위한 세라믹 조성물,이로부터 제조된 웨이퍼 이송용 로봇암 및 상기 웨이퍼 이송용 로봇암의 제조를 위한 세라믹 분말 성형용 냉간 등방압 프레스 장치 |
Citations (6)
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JPH04206545A (ja) * | 1990-11-30 | 1992-07-28 | Hitachi Ltd | 保持装置およびそれを用いた半導体製造装置 |
JPH09295882A (ja) * | 1996-05-01 | 1997-11-18 | Ngk Insulators Ltd | セラミックス部材 |
JPH1064986A (ja) * | 1996-05-08 | 1998-03-06 | Applied Materials Inc | 汚染抑制層を有する基板支持チャック及びその製造方法 |
JPH10233434A (ja) * | 1997-02-21 | 1998-09-02 | Hitachi Ltd | 静電吸着体と静電吸着装置 |
JPH10275853A (ja) * | 1997-01-31 | 1998-10-13 | Applied Materials Inc | 基板支持チャックにウエハを支持するための離隔パッド及びその製造方法 |
JPH11145266A (ja) * | 1997-11-07 | 1999-05-28 | Tokyo Electron Ltd | 静電吸着装置および静電吸着方法、ならびにそれを用いた基板搬送装置および基板搬送方法 |
Family Cites Families (11)
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US2010A (en) * | 1841-03-18 | Machine foe | ||
US4184188A (en) * | 1978-01-16 | 1980-01-15 | Veeco Instruments Inc. | Substrate clamping technique in IC fabrication processes |
JPH05315435A (ja) * | 1992-05-14 | 1993-11-26 | Hitachi Ltd | 試料保持装置 |
US6141203A (en) * | 1994-03-03 | 2000-10-31 | Sherman; Arthur | Electrostatic chuck |
US5669644A (en) * | 1995-11-13 | 1997-09-23 | Kokusai Electric Co., Ltd. | Wafer transfer plate |
US5656093A (en) * | 1996-03-08 | 1997-08-12 | Applied Materials, Inc. | Wafer spacing mask for a substrate support chuck and method of fabricating same |
JPH1092917A (ja) * | 1996-09-11 | 1998-04-10 | Metsukusu:Kk | 半導体ウエハ搬送用ロボットのハンド |
KR19990024607U (ko) * | 1997-12-13 | 1999-07-05 | 구본준 | 웨이퍼 이송장치 |
JP3273773B2 (ja) * | 1999-08-12 | 2002-04-15 | イビデン株式会社 | 半導体製造・検査装置用セラミックヒータ、半導体製造・検査装置用静電チャックおよびウエハプローバ用チャックトップ |
US6986865B2 (en) * | 2002-07-10 | 2006-01-17 | Watlow Electric Manufacturing Company | Method for manufacturing an electrostatic chuck |
CN100382275C (zh) * | 2004-10-29 | 2008-04-16 | 东京毅力科创株式会社 | 基板载置台、基板处理装置及基板的温度控制方法 |
-
2007
- 2007-03-12 KR KR1020070023831A patent/KR101119075B1/ko active IP Right Grant
-
2008
- 2008-03-03 JP JP2009553511A patent/JP4951677B2/ja active Active
- 2008-03-03 US US12/530,664 patent/US20100104403A1/en not_active Abandoned
- 2008-03-03 CN CN2008800079321A patent/CN101663745B/zh active Active
- 2008-03-03 WO PCT/KR2008/001205 patent/WO2008111752A1/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04206545A (ja) * | 1990-11-30 | 1992-07-28 | Hitachi Ltd | 保持装置およびそれを用いた半導体製造装置 |
JPH09295882A (ja) * | 1996-05-01 | 1997-11-18 | Ngk Insulators Ltd | セラミックス部材 |
JPH1064986A (ja) * | 1996-05-08 | 1998-03-06 | Applied Materials Inc | 汚染抑制層を有する基板支持チャック及びその製造方法 |
JPH10275853A (ja) * | 1997-01-31 | 1998-10-13 | Applied Materials Inc | 基板支持チャックにウエハを支持するための離隔パッド及びその製造方法 |
JPH10233434A (ja) * | 1997-02-21 | 1998-09-02 | Hitachi Ltd | 静電吸着体と静電吸着装置 |
JPH11145266A (ja) * | 1997-11-07 | 1999-05-28 | Tokyo Electron Ltd | 静電吸着装置および静電吸着方法、ならびにそれを用いた基板搬送装置および基板搬送方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20080083378A (ko) | 2008-09-18 |
US20100104403A1 (en) | 2010-04-29 |
JP2010521072A (ja) | 2010-06-17 |
CN101663745A (zh) | 2010-03-03 |
CN101663745B (zh) | 2011-09-07 |
WO2008111752A1 (en) | 2008-09-18 |
KR101119075B1 (ko) | 2012-03-15 |
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