JP4940184B2 - 真空処理装置および真空処理方法 - Google Patents
真空処理装置および真空処理方法 Download PDFInfo
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- JP4940184B2 JP4940184B2 JP2008134500A JP2008134500A JP4940184B2 JP 4940184 B2 JP4940184 B2 JP 4940184B2 JP 2008134500 A JP2008134500 A JP 2008134500A JP 2008134500 A JP2008134500 A JP 2008134500A JP 4940184 B2 JP4940184 B2 JP 4940184B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
- C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Description
102:被処理試料、
103:シャワープレート、
104:処理室、
105:ターボ分子ポンプ
106:ドライポンプ
107:圧力制御器
108:マイクロ波発信器
109:整合器
110:導波管
111:マイクロ波導入窓
112:ソレイドコイル
113:試料台
114:圧力交換室
115:高周波電源
116:流電源
117:試料台表面溝
118:伝熱ガス
119:ガス供給口
120:除塵ガス
201:異物
202:ダミー試料
203:バイパス用配管
204:接触用凸部(突出部)
205:ダミー試料溝
Claims (8)
- 真空容器内に配置され内部でプラズマが形成される処理室と、該処理室内の下部に配置されその上面に処理対象の被処理試料が載置される試料台と、前記処理室の上方に配置され前記処理室内に処理ガスを導入するための導入孔を有するガス導入機構を備えた真空処理装置において、
前記真空容器内の前記試料台にダミー試料を搬送して前記試料台に前記ダミー試料を載置し得る手段と、
前記試料台に前記被処理試料を固定する静電吸着手段と、
前記試料台と前記被処理試料との間に被処理試料の温度を制御するための伝熱ガスを導入する手段と、
前記試料台と前記ダミー試料の間に除塵ガスを導入する手段と、
前記伝熱ガスの導入と除塵ガスの導入を切替える手段とを備え、
前記除塵ガスを導入する手段の除塵ガスの供給口は前記伝熱ガスを導入する手段の伝熱ガスの供給口であることを特徴とする真空処理装置。 - 請求項1に記載の真空処理装置において、
前記試料台の静電吸着手段は、プラズマが生成されていない場合でも機能するダイポール型であることを特徴とする真空処理装置。 - 請求項1に記載の真空処理装置において、
前記試料台に載置する前記ダミー試料は、裏面に凸部を設け、前記ダミー試料の凸部を静電吸着して前記試料台に保持したときに、前記試料台から導入した除塵ガスの流路を前記凸部で形成したことを特徴とする真空処理装置。 - 請求項1に記載の真空処理装置において、
前記ダミー試料は、試料台と対向する表面に前記伝熱ガスを前記被処理試料と前記試料台の間に充填させるために設けられた溝の凹凸に対して反転させたパターンを有し、前記ダミー試料と前記試料台との間に除塵ガスを導入した時に前記ダミー試料と前記試料台の間全体が同じコンダクタンスにすることを特徴とする真空処理装置。 - 真空容器内に配置され内部でプラズマが形成される処理室と、該処理室内の下部に配置されその上面に処理対象の被処理試料が載置される試料台と、前記処理室の上方に配置され前記処理室内に処理ガスを導入するための導入孔を有するガス導入機構を備えた真空処理装置であって、前記真空容器内の前記試料台にダミー試料を搬送して前記試料台に前記ダミー試料を載置し得る手段と、前記試料台に前記被処理試料を固定する静電吸着手段と、前記試料台と被処理試料との間に被処理試料の温度を制御するための伝熱ガスを導入する手段と、前記試料台と前記ダミー試料の間に除塵ガスを導入する手段と、前記伝熱ガスの導入と除塵ガスの導入を切替える手段を備えた真空処理装置を用いた真空処理方法において、
前記試料台にダミー試料を載置し、
前記ダミー試料を静電吸着により前記試料台に固定し、
前記試料台と前記ダミー試料との間に除塵ガスを導入し、除塵ガスの流れにより前記試料台に付着している異物を除去することを特徴とする真空処理方法。 - 請求項5に記載の真空処理方法において、
前記試料台の静電吸着手段はダイポール型であることを特徴とする真空処理方法。 - 請求項5に記載の真空処理方法において、
前記試料台に対向する前記ダミー試料表面に凸部を設け、前記ダミー試料の凸部を静電吸着して前記試料台に保持し、前記試料台から導入した除塵ガスの流路を前記凸部で形成したことを特徴とする真空処理方法。 - 請求項5に記載の真空処理方法において、
前記ダミー試料と試料台との間に除塵ガスを供給して試料台表面に付着している異物を除去したのち、前記ダミー試料を搬出することによりダミー試料に付着した異物を処理室から除去することを特徴とする真空処理方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2008134500A JP4940184B2 (ja) | 2008-05-22 | 2008-05-22 | 真空処理装置および真空処理方法 |
TW097129662A TW200949928A (en) | 2008-05-22 | 2008-08-05 | Vacuum processing apparatus and vacuum processing method |
KR1020080081011A KR101007898B1 (ko) | 2008-05-22 | 2008-08-19 | 진공처리장치 및 진공처리방법 |
US12/199,820 US7913646B2 (en) | 2008-05-22 | 2008-08-28 | Vacuum processing apparatus and vacuum processing method |
US12/854,435 US8262801B2 (en) | 2008-05-22 | 2010-08-11 | Vacuum processing method |
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JP2008134500A JP4940184B2 (ja) | 2008-05-22 | 2008-05-22 | 真空処理装置および真空処理方法 |
Publications (3)
Publication Number | Publication Date |
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JP2009283699A JP2009283699A (ja) | 2009-12-03 |
JP2009283699A5 JP2009283699A5 (ja) | 2011-04-07 |
JP4940184B2 true JP4940184B2 (ja) | 2012-05-30 |
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JP2008134500A Expired - Fee Related JP4940184B2 (ja) | 2008-05-22 | 2008-05-22 | 真空処理装置および真空処理方法 |
Country Status (4)
Country | Link |
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US (2) | US7913646B2 (ja) |
JP (1) | JP4940184B2 (ja) |
KR (1) | KR101007898B1 (ja) |
TW (1) | TW200949928A (ja) |
Cited By (1)
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US8707887B2 (en) | 2008-04-24 | 2014-04-29 | Nippon Thermostat Co., Ltd. | Temperature sensing indicator and temperature sensing indicator device |
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DE102006039507A1 (de) * | 2006-08-23 | 2008-03-13 | Dürr Ecoclean GmbH | Reinigungsvorrichtung und Verfahren zum Reinigen eines Werkstücks |
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US10153141B2 (en) * | 2014-02-14 | 2018-12-11 | Electronics And Telecommunications Research Institute | Apparatus for monitoring gas and plasma process equipment including the same |
JP6422074B2 (ja) * | 2014-09-01 | 2018-11-14 | 株式会社アルバック | 真空処理装置 |
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JP7348454B2 (ja) | 2018-10-01 | 2023-09-21 | 東京エレクトロン株式会社 | 基板表面から異物を静電的に除去するための装置及び方法 |
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WO2023148861A1 (ja) * | 2022-02-02 | 2023-08-10 | 東京エレクトロン株式会社 | プラズマ処理装置のクリーニング方法 |
CN116334597B (zh) * | 2023-03-28 | 2024-06-25 | 成都沃特塞恩电子技术有限公司 | 一种反应腔组件、mpcvd***及mpcvd***控制方法 |
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JPH06173041A (ja) * | 1992-12-02 | 1994-06-21 | Nissin Electric Co Ltd | エッチング装置のクリ−ニング方法 |
US5746928A (en) * | 1996-06-03 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company Ltd | Process for cleaning an electrostatic chuck of a plasma etching apparatus |
JPH10321488A (ja) * | 1997-05-21 | 1998-12-04 | Hitachi Ltd | 粘着剤付き基板 |
JP2003197615A (ja) * | 2001-12-26 | 2003-07-11 | Tokyo Electron Ltd | プラズマ処理装置およびそのクリーニング方法 |
JP2004211168A (ja) * | 2003-01-06 | 2004-07-29 | Canon Inc | 処理装置クリーニング方法 |
JP4450371B2 (ja) * | 2004-04-28 | 2010-04-14 | 東京エレクトロン株式会社 | 基板洗浄装置及び基板洗浄方法 |
US7628864B2 (en) * | 2004-04-28 | 2009-12-08 | Tokyo Electron Limited | Substrate cleaning apparatus and method |
JP4804968B2 (ja) * | 2006-03-16 | 2011-11-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP2009212293A (ja) * | 2008-03-04 | 2009-09-17 | Tokyo Electron Ltd | 基板処理装置用の部品及び基板処理装置 |
JP2009245988A (ja) * | 2008-03-28 | 2009-10-22 | Tokyo Electron Ltd | プラズマ処理装置、チャンバ内部品及びチャンバ内部品の寿命検出方法 |
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US8707887B2 (en) | 2008-04-24 | 2014-04-29 | Nippon Thermostat Co., Ltd. | Temperature sensing indicator and temperature sensing indicator device |
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US20100300483A1 (en) | 2010-12-02 |
KR101007898B1 (ko) | 2011-01-19 |
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US7913646B2 (en) | 2011-03-29 |
US8262801B2 (en) | 2012-09-11 |
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JP2009283699A (ja) | 2009-12-03 |
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