JP4931605B2 - 半導体基板上へ金属を無電解堆積するための装置 - Google Patents
半導体基板上へ金属を無電解堆積するための装置 Download PDFInfo
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- JP4931605B2 JP4931605B2 JP2006551446A JP2006551446A JP4931605B2 JP 4931605 B2 JP4931605 B2 JP 4931605B2 JP 2006551446 A JP2006551446 A JP 2006551446A JP 2006551446 A JP2006551446 A JP 2006551446A JP 4931605 B2 JP4931605 B2 JP 4931605B2
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Images
Classifications
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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Description
図8は、上記の各部402、404に類似のフェースアップ無電解処理セル1010の一実施例の断面を示す。フェースアップに向けられた基板が、図8の1250に示される。用語「無電解処理」(又は無電解堆積処理)は、一般に、無電解堆積薄膜を基板上に堆積するために行われるすべての処理を網羅し、例えば、1つ又はそれ以上のプレ洗浄処理工程(基板準備工程)、無電解活性化処理工程、無電解堆積工程、及びポスト堆積洗浄及び/又はリンス工程を含む。
Claims (27)
- 無電解堆積システムであって、
処理メインフレームと、
前記メインフレーム上に位置する少なくとも1つの基板洗浄部と、
前記メインフレーム上に位置する無電解堆積部とを含み、
前記無電解堆積部が、
環境が制御された処理筐体と、
前記処理筐体に位置する第1流体処理部と、
前記処理筐体に位置する第2流体処理部と、
第1流体処理部と第2流体処理部の間で基板を搬送するための前記筐体に位置する基板搬送シャトルを含み、
前記無電解堆積システムは、前記メインフレーム上に位置し、処理筐体の内部に出入りするように配置された基板搬送ロボットを含み、
前記第1及び第2流体処理部の少なくとも1つは、
処理のために基板を支持するための回転可能な基板支持アセンブリと、
処理部の内部から基板処理アセンブリ上に支持された基板の周囲まで内側及び上方に延びる複数の流体捕獲リングを含み、複数の流体捕獲リングの各々は、基板が対応する昇降位置にあるときに、基板から流体を収集する、無電解堆積システム。 - 前記第1及び第2流体処理部が、フェースアップの向きで処理するために基板を支えるように配置された回転可能な基板支持アセンブリを含む請求項1記載の堆積システム。
- 前記回転可能な基板支持アセンブリが、
垂直リフトアセンブリと、
前記垂直リフトアセンブリとつながって位置する複数の基板固定フィンガーを含む請求項2記載の堆積システム。 - 前記複数の基板固定フィンガー及び前記垂直リフトアセンブリが、前記第1及び第2流体処理部の少なくとも1つに位置する流体拡散部材に平行に前記基板を協調して位置するように配置された請求項3記載の堆積システム。
- 少なくとも1つの前記第1及び第2流体処理部が、
流体拡散部材と、
ベースプレートが前記流体拡散部材の裏側の周囲に密閉されて固定されており、前記ベースプレートと前記流体拡散部材の前記裏側との間に流体体積を形成する、ベースプレートと、
前記流体体積と流体でつながる流体供給導管を含む請求項2記載の堆積システム。 - 前記流体供給導管が温度制御された流体源と流体でつながっている請求項5記載の堆積システム。
- 前記拡散部材が多孔性セラミックディスクを含む請求項5記載の堆積システム。
- 前記拡散部材がディスク型部材を通して形成される複数の穴を有するディスク型部材を含む請求項5記載の堆積システム。
- 前記複数の穴が0.7mm〜3mmの直径を有する請求項8記載の堆積システム。
- 前記第1及び第2流体処理部の各々が温度制御されたプロセス流体源と流体でつながる可動な流体吐出アームを含む請求項1記載の流体堆積システム。
- 前記環境制御された処理筐体が、前記第1流体処理部の上に位置する第1処理容積及び前記第2流体処理部の上に位置する第2処理容積を含み、前記第1処理容積が、中心壁によって前記第2処理容積と少なくとも部分的に離れている請求項1記載の流体堆積システム。
- 前記第1及び第2処理容積の頭部空間体積が各々24581cm 3 〜81935cm 3 である請求項11記載の堆積システム。
- 前記第1及び第2処理容積の各々が、前記処理容積とつながる環境制御アセンブリを有する請求項11記載の堆積システム。
- 前記環境制御アセンブリが、プロセスガス供給源と、ヒータと、加湿器の少なくとも1つを含む請求項13記載の堆積システム。
- 前記第1及び第2流体処理部の各々に位置する排気ポートを更に含む請求項14記載の堆積システム。
- 前記プロセスガス供給源及び前記排気ポートが協調して配置され、処理工程の間、前記第1及び第2処理容積内の酸素含有量を100ppm未満に維持する請求項15記載の堆積システム。
- 前記第1及び第2流体処理部の少なくとも1つが、前記処理部の内部から前記フィンガー上に位置する前記基板の周囲に向けて内側及び上方に延長された複数の流体捕獲リングを含む請求項3記載の堆積システム。
- 半導体プロセス用の流体堆積システムであって、
環境が制御された処理容積を定める処理筐体と、
前記制御処理容積内に位置する第1流体処理セルと、
前記制御処理容積内に位置する第2流体処理セルと、
前記制御処理容積内に位置し、前記第1及び第2流体処理セル間で基板を軸を中心に搬送するために配置された基板シャトルを含み、
その中で、前記第1及び第2流体処理セルが各々、
流体浸透拡散部材と、
プロセスのため前記流体拡散部材と平行に基板を回転して支えるために配置された基板支持アセンブリと、
前記基板支持アセンブリ上に位置する前記基板上にプロセス流体を吐出するために位置する移動可能な流体吐出アーム部材と、
処理部の内部から基板処理アセンブリ上に支持された基板の周囲まで内側及び上方に延びる複数の流体捕獲リングを含み、複数の流体捕獲リングの各々は、基板が対応する昇降位置にあるときに、基板から流体を収集する、無電解堆積システム。 - 前記の制御された処理容積と流体でつながる、制御されたプロセスガス供給源及びプロセスガス排気部を更に含み、前記プロセスガス供給源及び前記プロセスガス排気部が、前記処理容積内に100ppm未満の酸素しか生成しないように協調して配置される請求項18記載の堆積システム。
- 前記の制御された処理容積を、前記第1流体処理セル上に位置する第1処理容積と前記第2流体処理セル上に位置する第2処理容積に隔てるために位置する中心壁を更に含む請求項18記載の堆積システム。
- 前記第1及び第2処理容積の少なくとも1つが、16387cm 3 〜81935cm 3 の頭部空間体積を有する請求項20記載の堆積システム。
- 前記基板から前記第1及び第2処理容積の低部表面までの垂直距離が、30.4cm〜91.4cmである請求項20記載の堆積システム。
- 前記流体拡散部材が、ディスク型部材を通して形成される複数個の放射状に隔てられた流体吐出穴を有するディスク型部材を含む請求項18記載の堆積システム。
- 前記吐出穴が温度制御された流体源と流体でつながる請求項23記載の堆積システム。
- 前記流体拡散部材が、流体が浸透できる多孔性セラミックディスク部材を含む請求項18記載の堆積システム。
- 前記基板支持アセンブリが、複数個の垂直発動可能基板支持フィンガーを含む請求項18記載の堆積システム。
- 前記流体吐出アームが温度制御されたプロセス流体源と流体でつながる請求項18記載の堆積システム。
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US60/575,553 | 2004-05-28 | ||
US10/996,342 | 2004-11-22 | ||
US10/996,342 US7323058B2 (en) | 2004-01-26 | 2004-11-22 | Apparatus for electroless deposition of metals onto semiconductor substrates |
PCT/US2005/002510 WO2005073430A2 (en) | 2004-01-26 | 2005-01-26 | Apparatus for electroless deposition of metals onto semiconductor substrates |
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US8069813B2 (en) * | 2007-04-16 | 2011-12-06 | Lam Research Corporation | Wafer electroless plating system and associated methods |
US8127713B2 (en) * | 2008-12-12 | 2012-03-06 | Sokudo Co., Ltd. | Multi-channel developer system |
JP5331096B2 (ja) * | 2010-12-27 | 2013-10-30 | 東京エレクトロン株式会社 | めっき処理装置 |
JP6404828B2 (ja) * | 2013-11-25 | 2018-10-17 | リソテック ジャパン株式会社 | 小型回転アームを有する処理室および小型製造装置 |
US10347547B2 (en) * | 2016-08-09 | 2019-07-09 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
WO2019152555A1 (en) * | 2018-02-01 | 2019-08-08 | Applied Materials, Inc. | Cleaning components and methods in a plating system |
CN111364026B (zh) * | 2020-05-27 | 2020-08-14 | 上海陛通半导体能源科技股份有限公司 | 往复式旋转cvd设备及应用方法 |
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JP2000124156A (ja) * | 1998-10-12 | 2000-04-28 | Sony Corp | 半導体製造装置 |
JP2000319797A (ja) * | 1999-03-11 | 2000-11-21 | Ebara Corp | めっき装置 |
JP2001158968A (ja) * | 1999-07-09 | 2001-06-12 | Applied Materials Inc | 電気めっきシステムにおいて原位置無電解銅シード層を強化するシステム及び方法 |
JP2002302773A (ja) * | 2001-04-06 | 2002-10-18 | Sony Corp | 無電解メッキ装置およびその方法 |
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JP2000124156A (ja) * | 1998-10-12 | 2000-04-28 | Sony Corp | 半導体製造装置 |
JP2000319797A (ja) * | 1999-03-11 | 2000-11-21 | Ebara Corp | めっき装置 |
JP2001158968A (ja) * | 1999-07-09 | 2001-06-12 | Applied Materials Inc | 電気めっきシステムにおいて原位置無電解銅シード層を強化するシステム及び方法 |
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