JP4916119B2 - リモートプラズマ源清浄技術を用いた窒化ケイ素堆積中の白色粉末低減用の装置 - Google Patents
リモートプラズマ源清浄技術を用いた窒化ケイ素堆積中の白色粉末低減用の装置 Download PDFInfo
- Publication number
- JP4916119B2 JP4916119B2 JP2005075722A JP2005075722A JP4916119B2 JP 4916119 B2 JP4916119 B2 JP 4916119B2 JP 2005075722 A JP2005075722 A JP 2005075722A JP 2005075722 A JP2005075722 A JP 2005075722A JP 4916119 B2 JP4916119 B2 JP 4916119B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- liner
- wall
- remote
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning In General (AREA)
Description
[従来の技術]
SiH4+NH3→SiNH+3H2
3SiH4+4NH3→Si3N4+12H2
である。SiNは、基板上だけではなく壁や排気システムの上にも堆積する。既知の現場清浄プロセスは、清浄ガス(cleaning gas)(多くの場合、フッ化窒素(NF3)である)を供給し、排気可能な揮発性生成物を形成するためにRFプラズマを用いてチャンバ内部のガスを活性化することにより、壁からSiN膜を除去することが可能である。この反応は、次のように進行する。
NF3→RFプラズマ→NFx+F
F+SiN→RFプラズマ→SiF4+N2
生成物フッ化ケイ素(SiF4)は、この後、SiN堆積プロセス中にNH3およびフッ化水素(HF)と反応して、例えば六フッ化アンモニウム((NH4)2SiF6)を形成する。このような生成物および他の同様のケイ素含有フッ化物生成物は、ここでは「白色粉末」と呼ばれ、より一般的には、部分反応SiN膜を構成する。この望ましくない白色粉末は、例えば、真空ポンプ内で濃縮(condense)することがある。また、この白色粉末は、プロセスチャンバをポンプに接続する真空ライン(フォアライン)やポンプを排気システムに接続する真空ライン(排気ライン)内で濃縮することもある。最終的に、この白色粉末は、燃焼箱(排気を扱う)内で、およびチャンバ壁上で濃縮する可能性がある。ポンプおよび排気の場合、濃縮は、総計で数キログラムの白色粉末になることがあり、これにより、しばしばポンプが故障する。フォアラインおよび排気ラインの場合、目詰まりが起こることがある。この白色粉末は、堆積プロセス中において望ましくない微粒子の源ともなる。
[発明が解決しようとする課題]
[課題を解決するための手段]
[発明の実施の形態]
Claims (12)
- 白色粉末の生成が低減される窒化ケイ素堆積用の装置であって、
壁を有する堆積チャンバと、
チャンバ清浄中、前記壁を加熱する手段と、
前記壁の実質的な部分を覆うライナであって、チャンバ清浄中、前記壁により、ライナ上での濃縮およびライナとの化学反応を低減する温度まで加熱されるライナと、
前記堆積チャンバの外側に配置されたリモートチャンバと、
前記リモートチャンバ内にエネルギを供給する活性化源と、
リモートガス供給源からフッ素含有前駆ガスを、このフッ素含有前駆ガスが前記活性化源によって活性化されて清浄種が形成される前記リモートチャンバ内に流入する第1の導管と、
チャンバ清浄中、前記リモートチャンバから前記清浄種を前記堆積チャンバ内に流入する第2の導管と、
第2導管と流体連通したシャワーヘッドと、
シャワーヘッドに接続された電源と、
を備える装置。 - 前記加熱手段は、
前記壁の少なくとも一部内に置かれた隔室と、
前記隔室に接続された流入口ポートと、
前記隔室に接続された流出口ポートと、
を含む、請求項1記載の装置。 - 前記流入口ポートに接続された流体源を更に備える、請求項2記載の装置。
- ライナは、前記堆積チャンバの内部の全体を実質的に覆う、請求項1記載の装置。
- ライナは、酸化アルミニウム製である、請求項1記載の装置。
- ライナは、セラミック製である、請求項1記載の装置。
- 加熱手段は、前記チャンバの外部を実質的に覆う熱絶縁ブランケットである、請求項1記載の装置。
- 堆積チャンバ内部に位置決めされたサセプタを更に備える、請求項1記載の装置。
- サセプタを加熱する為のヒータを更に備える、請求項8記載の装置。
- ライナは、酸化アルミニウム製である、請求項4記載の装置。
- 白色粉末の生成が低減される窒化ケイ素堆積用の装置であって、
壁を有する堆積チャンバと、
前記堆積チャンバ内部に位置決めされたサセプタと、
サセプタを加熱する為のヒータと、
チャンバ清浄中、前記堆積チャンバの壁に熱結合され、前記壁を加熱する手段と、
前記堆積チャンバの壁の内面の実質的な部分を覆うライナであって、伝導と、前記サセプタからの放射と対流と、前記壁を加熱する手段によって壁が加熱されたときに堆積チャンバの壁とによって加熱されるように、前記ライナは構築と配置がされており、
前記堆積チャンバの外側に配置されたリモートチャンバと、
前記リモートチャンバ内にエネルギを供給する活性化源と、
リモートガス供給源からフッ素含有前駆ガスを、このフッ素含有前駆ガスが前記活性化源によって活性化されて清浄種が形成される前記リモートチャンバ内に流入する第1の導管と、
チャンバ清浄中、前記リモートチャンバから前記清浄種を前記堆積チャンバ内に流入する第2の導管と、
第2導管と流体連通したシャワーヘッドと、
シャワーヘッドに接続された電源と、
を備える装置。 - 前記壁のそれぞれは独立に加熱される、請求項11記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/782169 | 1997-01-14 | ||
US08/782,169 US6055927A (en) | 1997-01-14 | 1997-01-14 | Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9324651A Division JPH10199874A (ja) | 1997-01-14 | 1997-11-26 | リモートプラズマ源清浄技術を用いた窒化ケイ素堆積中の白色粉末低減用の装置および方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005286325A JP2005286325A (ja) | 2005-10-13 |
JP4916119B2 true JP4916119B2 (ja) | 2012-04-11 |
Family
ID=25125206
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9324651A Pending JPH10199874A (ja) | 1997-01-14 | 1997-11-26 | リモートプラズマ源清浄技術を用いた窒化ケイ素堆積中の白色粉末低減用の装置および方法 |
JP2005075722A Expired - Lifetime JP4916119B2 (ja) | 1997-01-14 | 2005-03-16 | リモートプラズマ源清浄技術を用いた窒化ケイ素堆積中の白色粉末低減用の装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9324651A Pending JPH10199874A (ja) | 1997-01-14 | 1997-11-26 | リモートプラズマ源清浄技術を用いた窒化ケイ素堆積中の白色粉末低減用の装置および方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6055927A (ja) |
JP (2) | JPH10199874A (ja) |
KR (2) | KR19980070120A (ja) |
TW (1) | TW385485B (ja) |
Families Citing this family (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3257328B2 (ja) * | 1995-03-16 | 2002-02-18 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
KR100296692B1 (ko) | 1996-09-10 | 2001-10-24 | 사토 도리 | 플라즈마cvd장치 |
US6055927A (en) * | 1997-01-14 | 2000-05-02 | Applied Komatsu Technology, Inc. | Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology |
US6184489B1 (en) * | 1998-04-13 | 2001-02-06 | Nec Corporation | Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles |
US6182603B1 (en) * | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
JP4162773B2 (ja) * | 1998-08-31 | 2008-10-08 | 東京エレクトロン株式会社 | プラズマ処理装置および検出窓 |
KR100292410B1 (ko) * | 1998-09-23 | 2001-06-01 | 윤종용 | 불순물 오염이 억제된 반도체 제조용 반응 챔버 |
US6383300B1 (en) * | 1998-11-27 | 2002-05-07 | Tokyo Electron Ltd. | Heat treatment apparatus and cleaning method of the same |
US6364954B2 (en) * | 1998-12-14 | 2002-04-02 | Applied Materials, Inc. | High temperature chemical vapor deposition chamber |
US6309465B1 (en) * | 1999-02-18 | 2001-10-30 | Aixtron Ag. | CVD reactor |
JP3911902B2 (ja) * | 1999-04-16 | 2007-05-09 | 東京エレクトロン株式会社 | 処理装置及び金属部品の表面処理方法 |
KR100363081B1 (ko) | 1999-09-16 | 2002-11-30 | 삼성전자 주식회사 | 박막 형성장치 |
US6227140B1 (en) * | 1999-09-23 | 2001-05-08 | Lam Research Corporation | Semiconductor processing equipment having radiant heated ceramic liner |
US6635570B1 (en) * | 1999-09-30 | 2003-10-21 | Carl J. Galewski | PECVD and CVD processes for WNx deposition |
KR100345053B1 (ko) * | 1999-10-01 | 2002-07-19 | 삼성전자 주식회사 | Hsg-si 제조 방법 및 상기 방법을 수행하는 장치 |
JP2001252527A (ja) * | 2000-03-13 | 2001-09-18 | Seiko Epson Corp | Pfcの処理方法および処理装置 |
US20030010354A1 (en) * | 2000-03-27 | 2003-01-16 | Applied Materials, Inc. | Fluorine process for cleaning semiconductor process chamber |
US6500356B2 (en) * | 2000-03-27 | 2002-12-31 | Applied Materials, Inc. | Selectively etching silicon using fluorine without plasma |
US6329297B1 (en) * | 2000-04-21 | 2001-12-11 | Applied Materials, Inc. | Dilute remote plasma clean |
US6635117B1 (en) * | 2000-04-26 | 2003-10-21 | Axcelis Technologies, Inc. | Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system |
US7288491B2 (en) * | 2000-08-11 | 2007-10-30 | Applied Materials, Inc. | Plasma immersion ion implantation process |
US20050230047A1 (en) * | 2000-08-11 | 2005-10-20 | Applied Materials, Inc. | Plasma immersion ion implantation apparatus |
US7465478B2 (en) * | 2000-08-11 | 2008-12-16 | Applied Materials, Inc. | Plasma immersion ion implantation process |
US6451692B1 (en) * | 2000-08-18 | 2002-09-17 | Micron Technology, Inc. | Preheating of chemical vapor deposition precursors |
US6843258B2 (en) | 2000-12-19 | 2005-01-18 | Applied Materials, Inc. | On-site cleaning gas generation for process chamber cleaning |
US20020124867A1 (en) * | 2001-01-08 | 2002-09-12 | Apl Co., Ltd. | Apparatus and method for surface cleaning using plasma |
US7111629B2 (en) * | 2001-01-08 | 2006-09-26 | Apl Co., Ltd. | Method for cleaning substrate surface |
JP2002243898A (ja) * | 2001-02-13 | 2002-08-28 | Ebara Corp | ビーム取り出し装置 |
WO2002093605A2 (en) * | 2001-05-17 | 2002-11-21 | Tokyo Electron Limited | Cylinder-based plasma processing system |
US6811615B2 (en) * | 2001-05-24 | 2004-11-02 | Applied Materials, Inc. | Photo-assisted chemical cleaning and laser ablation cleaning of process chamber |
US7159597B2 (en) * | 2001-06-01 | 2007-01-09 | Applied Materials, Inc. | Multistep remote plasma clean process |
JP3990881B2 (ja) * | 2001-07-23 | 2007-10-17 | 株式会社日立製作所 | 半導体製造装置及びそのクリーニング方法 |
TWI245329B (en) * | 2001-11-14 | 2005-12-11 | Anelva Corp | Heating element CVD device and heating element CVD method using the same |
JP4121269B2 (ja) * | 2001-11-27 | 2008-07-23 | 日本エー・エス・エム株式会社 | セルフクリーニングを実行するプラズマcvd装置及び方法 |
US7175713B2 (en) * | 2002-01-25 | 2007-02-13 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
US6902629B2 (en) * | 2002-04-12 | 2005-06-07 | Applied Materials, Inc. | Method for cleaning a process chamber |
US20040000327A1 (en) * | 2002-06-26 | 2004-01-01 | Fabio Somboli | Apparatus and method for washing quartz parts, particularly for process equipment used in semiconductor industries |
US7588036B2 (en) * | 2002-07-01 | 2009-09-15 | Applied Materials, Inc. | Chamber clean method using remote and in situ plasma cleaning systems |
FR2842387B1 (fr) * | 2002-07-11 | 2005-07-08 | Cit Alcatel | Chemisage chauffant pour reacteur de gravure plasma, procede de gravure pour sa mise en oeuvre |
US20040129385A1 (en) * | 2003-01-02 | 2004-07-08 | International Business Machines Corporation | Pre-loaded plasma reactor apparatus and application thereof |
TW589396B (en) * | 2003-01-07 | 2004-06-01 | Arima Optoelectronics Corp | Chemical vapor deposition reactor |
US7037376B2 (en) * | 2003-04-11 | 2006-05-02 | Applied Materials Inc. | Backflush chamber clean |
US8372205B2 (en) * | 2003-05-09 | 2013-02-12 | Applied Materials, Inc. | Reducing electrostatic charge by roughening the susceptor |
US20040221959A1 (en) * | 2003-05-09 | 2004-11-11 | Applied Materials, Inc. | Anodized substrate support |
US20050221618A1 (en) * | 2004-03-31 | 2005-10-06 | Amrhein Frederick J | System for controlling a plenum output flow geometry |
US20050227382A1 (en) * | 2004-04-02 | 2005-10-13 | Hui Angela T | In-situ surface treatment for memory cell formation |
US7358192B2 (en) * | 2004-04-08 | 2008-04-15 | Applied Materials, Inc. | Method and apparatus for in-situ film stack processing |
KR101279914B1 (ko) | 2004-06-25 | 2013-07-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 밀봉 필름의 차수 성능 개선 방법 및 장치 |
US7220687B2 (en) * | 2004-06-25 | 2007-05-22 | Applied Materials, Inc. | Method to improve water-barrier performance by changing film surface morphology |
US7214600B2 (en) * | 2004-06-25 | 2007-05-08 | Applied Materials, Inc. | Method to improve transmittance of an encapsulating film |
US7682940B2 (en) | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
US20060266288A1 (en) * | 2005-05-27 | 2006-11-30 | Applied Materials, Inc. | High plasma utilization for remote plasma clean |
US7510742B2 (en) * | 2005-11-18 | 2009-03-31 | United Technologies Corporation | Multilayered boron nitride/silicon nitride fiber coatings |
US8173228B2 (en) * | 2006-01-27 | 2012-05-08 | Applied Materials, Inc. | Particle reduction on surfaces of chemical vapor deposition processing apparatus |
WO2007112058A2 (en) * | 2006-03-24 | 2007-10-04 | Applied Materials, Inc. | Carbon precursors for use during silicon epitaxial firm formation |
KR101074186B1 (ko) * | 2006-04-07 | 2011-10-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 에피택셜 필름 형성을 위한 클러스터 툴 |
KR20090006144A (ko) * | 2006-04-07 | 2009-01-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 에피택셜막을 형성하는 동안 이용되는 가스 매니폴드들 |
US7674337B2 (en) * | 2006-04-07 | 2010-03-09 | Applied Materials, Inc. | Gas manifolds for use during epitaxial film formation |
KR101160930B1 (ko) | 2006-07-31 | 2012-06-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 카본-함유 실리콘 에피택셜 층을 형성하는 방법 |
DE112007001813T5 (de) | 2006-07-31 | 2009-07-09 | Applied Materials, Inc., Santa Clara | Verfahren zum Steuern der Morphologie während der Bildung einer epitaktischen Schicht |
US20080131622A1 (en) * | 2006-12-01 | 2008-06-05 | White John M | Plasma reactor substrate mounting surface texturing |
KR101339699B1 (ko) * | 2007-04-02 | 2013-12-10 | (주)소슬 | 플라즈마 식각 장치 |
US8980049B2 (en) | 2007-04-02 | 2015-03-17 | Charm Engineering Co., Ltd. | Apparatus for supporting substrate and plasma etching apparatus having the same |
KR101204496B1 (ko) * | 2007-05-18 | 2012-11-26 | 가부시키가이샤 아루박 | 플라즈마 처리 장치 및 방착 부재의 제조 방법 |
US20090056743A1 (en) * | 2007-08-31 | 2009-03-05 | Soo Young Choi | Method of cleaning plasma enhanced chemical vapor deposition chamber |
US20090071406A1 (en) * | 2007-09-19 | 2009-03-19 | Soo Young Choi | Cooled backing plate |
JP5020758B2 (ja) * | 2007-09-25 | 2012-09-05 | 東京エレクトロン株式会社 | ガス供給装置、半導体製造装置及びガス供給装置用部品 |
US20090314208A1 (en) * | 2008-06-24 | 2009-12-24 | Applied Materials, Inc. | Pedestal heater for low temperature pecvd application |
JP2010016225A (ja) * | 2008-07-04 | 2010-01-21 | Tokyo Electron Ltd | 温度調節機構および温度調節機構を用いた半導体製造装置 |
US8410935B2 (en) * | 2008-07-10 | 2013-04-02 | Radarfind Corporation | Rotatable tags for automated location and monitoring of moveable objects and related systems |
KR101509632B1 (ko) * | 2008-09-19 | 2015-04-08 | 주성엔지니어링(주) | 기판 처리 장치 및 방법 |
US7967913B2 (en) * | 2008-10-22 | 2011-06-28 | Applied Materials, Inc. | Remote plasma clean process with cycled high and low pressure clean steps |
JP5397215B2 (ja) * | 2009-12-25 | 2014-01-22 | ソニー株式会社 | 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム |
WO2011114940A1 (ja) * | 2010-03-16 | 2011-09-22 | 東京エレクトロン株式会社 | 成膜装置 |
JP5976776B2 (ja) * | 2011-04-08 | 2016-08-24 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Uv処理、化学処理、および堆積のための装置および方法 |
KR102036325B1 (ko) * | 2013-02-13 | 2019-10-25 | 삼성디스플레이 주식회사 | 방착 유니트를 가지는 박막 증착 장치와, 이의 증착물을 제거하는 방법 |
JP5764228B1 (ja) * | 2014-03-18 | 2015-08-12 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体 |
KR102410526B1 (ko) * | 2015-01-22 | 2022-06-20 | 삼성디스플레이 주식회사 | 플라즈마 발생장치의 오염측정장비 |
US10879049B2 (en) * | 2015-07-30 | 2020-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical vapor deposition tool and operating method thereof |
US10428426B2 (en) * | 2016-04-22 | 2019-10-01 | Applied Materials, Inc. | Method and apparatus to prevent deposition rate/thickness drift, reduce particle defects and increase remote plasma system lifetime |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5211176A (en) * | 1975-07-18 | 1977-01-27 | Toshiba Corp | Activation gas reaction apparatus |
JPS55145338A (en) * | 1979-05-01 | 1980-11-12 | Toshiba Corp | Pressure reduction chemical vapour deposition device |
JPS6029295B2 (ja) * | 1979-08-16 | 1985-07-10 | 舜平 山崎 | 非単結晶被膜形成法 |
CH643469A5 (fr) * | 1981-12-22 | 1984-06-15 | Siv Soc Italiana Vetro | Installation pour deposer en continu, sur la surface d'un substrat porte a haute temperature, une couche d'une matiere solide. |
JPH0770509B2 (ja) * | 1982-10-08 | 1995-07-31 | 株式会社日立製作所 | ドライプロセス装置 |
JPS6126774A (ja) * | 1984-07-16 | 1986-02-06 | Canon Inc | 非晶質シリコン膜形成装置 |
JPS6188527A (ja) * | 1984-10-08 | 1986-05-06 | Hitachi Ltd | 半導体プロセス装置 |
US4724160A (en) * | 1986-07-28 | 1988-02-09 | Dow Corning Corporation | Process for the production of semiconductor materials |
JPS6372877A (ja) * | 1986-09-12 | 1988-04-02 | Tokuda Seisakusho Ltd | 真空処理装置 |
JP2760845B2 (ja) * | 1988-07-08 | 1998-06-04 | 株式会社日立製作所 | プラズマ処理装置及びその方法 |
JP2740789B2 (ja) * | 1988-10-31 | 1998-04-15 | 東京エレクトロン株式会社 | 処理方法 |
US5015330A (en) * | 1989-02-28 | 1991-05-14 | Kabushiki Kaisha Toshiba | Film forming method and film forming device |
JP2949874B2 (ja) * | 1990-11-21 | 1999-09-20 | 富士電機株式会社 | Ecrプラズマcvd装置ドライクリーニングの方法 |
WO1992016671A1 (en) * | 1991-03-20 | 1992-10-01 | Canon Kabushiki Kaisha | Method and device for forming film by sputtering process |
JP2532401Y2 (ja) * | 1991-04-16 | 1997-04-16 | ソニー株式会社 | バイアスecrプラズマcvd装置 |
US5212118A (en) * | 1991-08-09 | 1993-05-18 | Saxena Arjun N | Method for selective chemical vapor deposition of dielectric, semiconductor and conductive films on semiconductor and metallic substrates |
DE4132559A1 (de) * | 1991-09-30 | 1993-04-08 | Siemens Ag | Verfahren zur in-situ-reinigung von abscheidekammern durch plasmaaetzen |
JP3079818B2 (ja) * | 1992-12-25 | 2000-08-21 | 富士電機株式会社 | プラズマ処理装置 |
US5366585A (en) * | 1993-01-28 | 1994-11-22 | Applied Materials, Inc. | Method and apparatus for protection of conductive surfaces in a plasma processing reactor |
US5453125A (en) * | 1994-02-17 | 1995-09-26 | Krogh; Ole D. | ECR plasma source for gas abatement |
JPH07288248A (ja) * | 1994-04-19 | 1995-10-31 | Toshiba Corp | 半導体素子用プラズマ装置 |
JPH07335563A (ja) * | 1994-06-10 | 1995-12-22 | Mitsubishi Electric Corp | プラズマcvd装置 |
EP0697467A1 (en) * | 1994-07-21 | 1996-02-21 | Applied Materials, Inc. | Method and apparatus for cleaning a deposition chamber |
JP3360090B2 (ja) * | 1994-09-30 | 2002-12-24 | アネルバ株式会社 | プラズマ処理装置 |
US5558717A (en) * | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
JP3421465B2 (ja) * | 1995-02-20 | 2003-06-30 | 東京エレクトロン株式会社 | 熱処理装置及びその方法 |
US5653806A (en) * | 1995-03-10 | 1997-08-05 | Advanced Technology Materials, Inc. | Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same |
JPH08253863A (ja) * | 1995-03-14 | 1996-10-01 | Sony Corp | プラズマcvd装置 |
JP3257328B2 (ja) * | 1995-03-16 | 2002-02-18 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
JP3585578B2 (ja) * | 1995-05-30 | 2004-11-04 | アネルバ株式会社 | プラズマ処理装置 |
JP3164195B2 (ja) * | 1995-06-15 | 2001-05-08 | 住友金属工業株式会社 | マイクロ波プラズマ処理装置 |
US5895548A (en) * | 1996-03-29 | 1999-04-20 | Applied Komatsu Technology, Inc. | High power microwave plasma applicator |
US5846332A (en) * | 1996-07-12 | 1998-12-08 | Applied Materials, Inc. | Thermally floating pedestal collar in a chemical vapor deposition chamber |
US5788778A (en) * | 1996-09-16 | 1998-08-04 | Applied Komatsu Technology, Inc. | Deposition chamber cleaning technique using a high power remote excitation source |
US5882411A (en) * | 1996-10-21 | 1999-03-16 | Applied Materials, Inc. | Faceplate thermal choke in a CVD plasma reactor |
US5824375A (en) * | 1996-10-24 | 1998-10-20 | Applied Materials, Inc. | Decontamination of a plasma reactor using a plasma after a chamber clean |
US6020035A (en) * | 1996-10-29 | 2000-02-01 | Applied Materials, Inc. | Film to tie up loose fluorine in the chamber after a clean process |
US5812403A (en) * | 1996-11-13 | 1998-09-22 | Applied Materials, Inc. | Methods and apparatus for cleaning surfaces in a substrate processing system |
US6055927A (en) * | 1997-01-14 | 2000-05-02 | Applied Komatsu Technology, Inc. | Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology |
US5834371A (en) * | 1997-01-31 | 1998-11-10 | Tokyo Electron Limited | Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof |
US6071573A (en) * | 1997-12-30 | 2000-06-06 | Lam Research Corporation | Process for precoating plasma CVD reactors |
-
1997
- 1997-01-14 US US08/782,169 patent/US6055927A/en not_active Expired - Lifetime
- 1997-11-26 JP JP9324651A patent/JPH10199874A/ja active Pending
- 1997-11-27 TW TW086117844A patent/TW385485B/zh active
- 1997-11-28 KR KR1019970063733A patent/KR19980070120A/ko active Search and Examination
-
2000
- 2000-03-10 US US09/523,538 patent/US6468601B1/en not_active Expired - Lifetime
-
2005
- 2005-03-16 JP JP2005075722A patent/JP4916119B2/ja not_active Expired - Lifetime
- 2005-08-19 KR KR1020050076333A patent/KR100857871B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2005286325A (ja) | 2005-10-13 |
KR19980070120A (ko) | 1998-10-26 |
JPH10199874A (ja) | 1998-07-31 |
KR100857871B1 (ko) | 2008-09-10 |
TW385485B (en) | 2000-03-21 |
KR20060087376A (ko) | 2006-08-02 |
US6468601B1 (en) | 2002-10-22 |
US6055927A (en) | 2000-05-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4916119B2 (ja) | リモートプラズマ源清浄技術を用いた窒化ケイ素堆積中の白色粉末低減用の装置 | |
JP3902408B2 (ja) | セルフクリーニング用の遠隔プラズマソースを備えた半導体処理装置 | |
JP3132489B2 (ja) | 化学的気相成長装置及び薄膜成膜方法 | |
US6810886B2 (en) | Chamber cleaning via rapid thermal process during a cleaning period | |
CN100577865C (zh) | 为介质cvd膜实现晶片间厚度均匀性的高功率介质干燥 | |
US5326723A (en) | Method for improving stability of tungsten chemical vapor deposition | |
TWI534863B (zh) | 選擇性沉積磊晶鍺合金應力源的方法與設備 | |
US8343317B2 (en) | In situ cleaning of CVD System exhaust | |
US20020185067A1 (en) | Apparatus and method for in-situ cleaning of a throttle valve in a CVD system | |
JPH10149989A (ja) | 高出力遠隔励起源を用いた堆積チャンバクリーニング技術 | |
CN105453233A (zh) | 于外延生长之前预清洁基板表面的方法和设备 | |
US8232217B2 (en) | Film deposition apparatus, method of manufacturing a semiconductor device, and method of coating the film deposition apparatus | |
CN103290387B (zh) | 化学气相沉积反应器过程室清洁方法 | |
JP2001102367A (ja) | 遠隔プラズマ源を用いる被膜除去 | |
JP3456933B2 (ja) | 半導体処理装置のクリーニング方法および半導体処理装置 | |
KR20040088948A (ko) | Rps 교체용 분리 밸브를 가지는 cvd 장치 | |
US6794308B2 (en) | Method for reducing by-product deposition in wafer processing equipment | |
JPH0891987A (ja) | プラズマ化学蒸着装置 | |
JP2022114450A (ja) | 層を堆積させるための方法およびシステム | |
JPH09246260A (ja) | プラズマcvd装置 | |
JPH01279759A (ja) | プラズマ処理装置 | |
JPS61121324A (ja) | 気相成長装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080919 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080924 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20081219 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20081225 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090121 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100216 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100517 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100520 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100616 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100621 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100716 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100722 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100728 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20101227 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20110317 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110628 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110926 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110929 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20111027 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20111101 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111125 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120110 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120124 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150203 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |