JP4911510B2 - 半導体記憶装置 - Google Patents
半導体記憶装置 Download PDFInfo
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- JP4911510B2 JP4911510B2 JP2007107192A JP2007107192A JP4911510B2 JP 4911510 B2 JP4911510 B2 JP 4911510B2 JP 2007107192 A JP2007107192 A JP 2007107192A JP 2007107192 A JP2007107192 A JP 2007107192A JP 4911510 B2 JP4911510 B2 JP 4911510B2
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Description
また、本発明の他の目的は、CBRリフレッシュ動作電流の削減を達成することができる半導体記憶装置を提供することにある。
また、本発明の他の目的は、メモリセルのホールド特性に基づいてCBRリフレッシュ動作回数を1/m(mは2以上の整数)に削減することができる半導体記憶装置を提供することにある。
105,405:内部クロック発生回路
106,107,108,406,407,408:ラッチ回路
109,309,331,409:RAS制御回路群
110,410:コマンドデコーダ
111,411:セルフリフレッシュ判定回路
112,412:内部Xアドレス発生回路
113,413:プログラム制御回路
114,414:CBRリフレッシュ制御部
115,315,415:スキップ制御回路
116,316,416:リフレッシュ信号発生回路
117,417:セルフタイマ
119,418:内部Xアドレスカウンタ回路
120,422:アドレスプリデコーダ
121,321,333,424:ワード線ドライバ群
122,322,337,428:センスアンプ群
IN1〜IN10:インバータ
G1〜G3:ナンド回路
Tr1:トランジスタ
T1,T2:トランスファゲート
NR:NOR回路
Claims (6)
- m個(mは2以上の整数)のアレイ部を備えるメモリセルアレイと、
前記m個のアレイ部にそれぞれ対応して設けられ、m個のリフレッシュ指示信号をそれぞれ受けて前記m個のアレイ部に対してそれぞれリフレッシュ動作を実行するm個のリフレッシュ部と、
制御データ保持回路とを備え、
前記制御データ保持回路に制御データが保持されている時に、前記m個のリフレッシュ部は、それぞれ時分割で前記m個リフレッシュ指示信号を受けて前記m個のアレイ部に対してのリフレッシュ動作を時分割で行い、前記制御データが保持されていない時に、前記m個のリフレッシュ部は、それぞれ同時に前記m個のリフレッシュ指示信号を受けて前記m個のアレイ部に対してのリフレッシュ動作を同時に行う
半導体記憶装置。 - 請求項1に記載の半導体記憶装置において、
CBRリフレッシュコマンドを受けるリフレッシュ指示部と、
前記制御データ保持回路と接続され、前記CBRリフレッシュ指示部を制御するCBRリフレッシュ制御部とを備え、
前記CBRリフレッシュ制御部は、前記制御データ保持回路に前記制御データが保持されている時に、前記リフレッシュ指示部を前記CBRリフレッシュコマンドを受ける度に前記m個のリフレッシュ部に順番に前記リフレッシュ指示信号を出力するように制御し、前記制御データが保持されていない時に、前記リフレッシュ指示部を前記CBRリフレッシュコマンドを受ける毎に前記m個のリフレッシュ部の全てに前記リフレッシュ指示信号を出力するように制御する
半導体記憶装置。 - 請求項1又は2に記載の半導体記憶装置おいて、
前記制御データ保持回路は、ヒューズを備え、前記制御データを保持するために前記ヒューズは切断される
半導体記憶装置。 - 請求項3に記載の半導体記憶装置において、
前記メモリセルのデータ保持時間に基づいて前記ヒューズは切断される
半導体記憶装置。 - 請求項1又は2に記載の半導体記憶装置おいて、
前記制御データ保持回路は、不揮発性メモリを備え、前記制御データは前記不揮発性メモリに書き込まれる
半導体記憶装置。 - 請求項5に記載の半導体記憶装置において、
前記メモリセルのデータ保持時間に基づいて前記不揮発性メモリに前記制御データは書き込まれる
半導体記憶装置。
Priority Applications (1)
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JP2007107192A JP4911510B2 (ja) | 2007-04-16 | 2007-04-16 | 半導体記憶装置 |
Applications Claiming Priority (1)
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JP2007107192A JP4911510B2 (ja) | 2007-04-16 | 2007-04-16 | 半導体記憶装置 |
Related Parent Applications (1)
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JP2002259448A Division JP4143368B2 (ja) | 2002-09-04 | 2002-09-04 | 半導体記憶装置 |
Publications (2)
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JP2007188635A JP2007188635A (ja) | 2007-07-26 |
JP4911510B2 true JP4911510B2 (ja) | 2012-04-04 |
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JP2007107192A Expired - Fee Related JP4911510B2 (ja) | 2007-04-16 | 2007-04-16 | 半導体記憶装置 |
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US11227649B2 (en) | 2019-04-04 | 2022-01-18 | Micron Technology, Inc. | Apparatuses and methods for staggered timing of targeted refresh operations |
US11257535B2 (en) | 2019-02-06 | 2022-02-22 | Micron Technology, Inc. | Apparatuses and methods for managing row access counts |
US11264096B2 (en) | 2019-05-14 | 2022-03-01 | Micron Technology, Inc. | Apparatuses, systems, and methods for a content addressable memory cell with latch and comparator circuits |
US11264079B1 (en) | 2020-12-18 | 2022-03-01 | Micron Technology, Inc. | Apparatuses and methods for row hammer based cache lockdown |
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US11348631B2 (en) | 2020-08-19 | 2022-05-31 | Micron Technology, Inc. | Apparatuses, systems, and methods for identifying victim rows in a memory device which cannot be simultaneously refreshed |
US11380382B2 (en) | 2020-08-19 | 2022-07-05 | Micron Technology, Inc. | Refresh logic circuit layout having aggressor detector circuit sampling circuit and row hammer refresh control circuit |
US11386946B2 (en) | 2019-07-16 | 2022-07-12 | Micron Technology, Inc. | Apparatuses and methods for tracking row accesses |
US11398265B2 (en) | 2019-08-20 | 2022-07-26 | Micron Technology, Inc. | Apparatuses and methods for analog row access tracking |
US11424005B2 (en) | 2019-07-01 | 2022-08-23 | Micron Technology, Inc. | Apparatuses and methods for adjusting victim data |
US11462291B2 (en) | 2020-11-23 | 2022-10-04 | Micron Technology, Inc. | Apparatuses and methods for tracking word line accesses |
US11482275B2 (en) | 2021-01-20 | 2022-10-25 | Micron Technology, Inc. | Apparatuses and methods for dynamically allocated aggressor detection |
US11557331B2 (en) | 2020-09-23 | 2023-01-17 | Micron Technology, Inc. | Apparatuses and methods for controlling refresh operations |
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US11688451B2 (en) | 2021-11-29 | 2023-06-27 | Micron Technology, Inc. | Apparatuses, systems, and methods for main sketch and slim sketch circuit for row address tracking |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012038399A (ja) | 2010-08-11 | 2012-02-23 | Elpida Memory Inc | 半導体装置 |
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JPH05135578A (ja) * | 1991-11-13 | 1993-06-01 | Matsushita Electric Ind Co Ltd | 記憶装置 |
JPH05298882A (ja) * | 1992-04-21 | 1993-11-12 | Pfu Ltd | ダイナミックramのリフレッシュ制御方式 |
JPH07122065A (ja) * | 1993-10-20 | 1995-05-12 | Kokusai Electric Co Ltd | メモリ制御回路 |
JP3220586B2 (ja) * | 1993-12-28 | 2001-10-22 | 富士通株式会社 | 半導体記憶装置 |
JPH09237492A (ja) * | 1996-03-01 | 1997-09-09 | Toshiba Corp | メモリ制御装置 |
JP3745185B2 (ja) * | 2000-03-13 | 2006-02-15 | 沖電気工業株式会社 | ダイナミックランダムアクセスメモリ |
-
2007
- 2007-04-16 JP JP2007107192A patent/JP4911510B2/ja not_active Expired - Fee Related
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