JP4907544B2 - 電子デバイス - Google Patents
電子デバイス Download PDFInfo
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- JP4907544B2 JP4907544B2 JP2007538569A JP2007538569A JP4907544B2 JP 4907544 B2 JP4907544 B2 JP 4907544B2 JP 2007538569 A JP2007538569 A JP 2007538569A JP 2007538569 A JP2007538569 A JP 2007538569A JP 4907544 B2 JP4907544 B2 JP 4907544B2
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- 239000000758 substrate Substances 0.000 claims description 30
- 239000003990 capacitor Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 230000003068 static effect Effects 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 6
- 238000013459 approach Methods 0.000 claims description 4
- 238000009423 ventilation Methods 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 230000001419 dependent effect Effects 0.000 claims description 2
- 238000005530 etching Methods 0.000 description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/40—Structural combinations of variable capacitors with other electric elements not covered by this subclass, the structure mainly consisting of a capacitor, e.g. RC combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/06—Contacts characterised by the shape or structure of the contact-making surface, e.g. grooved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H57/00—Electrostrictive relays; Piezoelectric relays
- H01H2057/006—Micromechanical piezoelectric relay
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
- H01H2059/0072—Electrostatic relays; Electro-adhesion relays making use of micromechanics with stoppers or protrusions for maintaining a gap, reducing the contact area or for preventing stiction between the movable and the fixed electrode in the attracted position
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H57/00—Electrostrictive relays; Piezoelectric relays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
Description
第2の位置におけるキャパシタンス密度が利用可能な表面積を基準にした場合見込まれるキャパシタンス密度よりも低いということが、この公知のデバイスの欠点である。それ故、有効同調レンジも減少し、結果として同調レンジの減少により、MEMS素子は、可同調キャパシタ及びスイッチに係る別の解決策にとても太刀打ちできない。かかる代替策は、特に、ピンダイオード及びpHEMTトランジスタのようなディスクリートスイッチを必要ならばディスクリートキャパシタ又は薄膜キャパシタと組み合わせて用いることである。
Claims (11)
- 微小電気機械システム(MEMS)素子を有する電子デバイスであって、前記MEMS素子が、第1の電極と、可動素子の一部であり、第1の位置と第2の位置との間で前記第1の電極に近づいたりこれから遠ざかることができる第2の電極とを有し、前記第2の電極が、その第1の位置において、前記第1の電極から隙間を置いて離隔され、前記可動素子が、メカニカル層及び中間層を有し、前記第2の電極が前記中間層中に構成されている電子デバイスにおいて、
前記第2の電極は、前記中間層中の複数の部分によって構成され、前記部分は各々、別個の垂直相互連結部によって前記メカニカル層に機械的に連結されており、
前記垂直相互連結部は、前記第2の電極よりも小さな直径を有する、
電子デバイス。 - 少なくとも1つの貫通穴が、前記可動素子に設けられており、前記貫通穴は、前記メカニカル層及び前記中間層中の1つの前記部分を貫通している、請求項1に記載の電子デバイス。
- 前記可動素子は、通気チャネルを備え、前記通気チャネルの第2の閉鎖位置では、前記部分と前記相互連結部との間の空間は、互いに離れている、請求項2に記載の電子デバイス。
- 前記メカニカル層は、前記第2の電極を一部とする少なくとも1つの可動部分を備え、前記可動部分は、弾性結合により前記可動素子の主要部分に結合されている、請求項1に記載の電子デバイス。
- 運動に依存する力を前記可動素子に及ぼすよう結合されると共に前記可動素子と基板に設けられた1つ又は2つ以上の突起との間に位置する1つ又は2つ以上の可撓性素子を更に有する、請求項1又は4に記載の電子デバイス。
- 少なくとも1つの静止摩擦防止バンプが設けられている、請求項1、4、5のいずれかに記載の電子デバイス。
- 少なくとも1つの作動電極が設けられている、請求項1、4、5、6のいずれかに記載の電子デバイス。
- 前記中間層と前記メカニカル層は、互いに異なる材料から成る、請求項1に記載の電子デバイス。
- 前記MEMS素子に隣接して設けられた薄膜キャパシタを更に有し、前記薄膜キャパシタは、前記基板の第1の側に設けられた第1の電極及び前記中間層中に設けられた第2の電極を備え、前記電極相互間には、誘電体の層が設けられている、請求項1に記載の電子デバイス。
- 前記メカニカル層は、金属から成る、請求項1に記載の電子デバイス。
- 微小電気機械システム(MEMS)素子であって、
基板と、
前記基板の上に置かれた第1の電極と、
前記基板の上に置かれ且つこれに近づいたり遠ざかったりすることができる、可動素子と、
前記可動素子の上に置かれた少なくとも3つの第2の電極であって、前記各第2の電極は前記第1の電極に被さっており、前記第2の電極は第1の位置と第2の位置との間で前記第1の電極に近づいたりこれから遠ざかることができ、前記第2の電極が、その第1の位置において、前記第1の電極から隙間を置いて離隔されている、第2の電極と、
少なくとも3つの垂直相互連結部であって、前記各垂直相互連結部は前記各第2の電極を前記可動素子に機械的に連結する、垂直相互連結部と、
を備え、
ここにおいて、前記各垂直相互連結部は、前記可動素子の主面に平行な面に対して、平行な断面領域を有し、前記各垂直相互連結部はこの垂直相互連結部に接続された第2の電極の1つの水平断面領域よりも小さい、
微小電気機械システム(MEMS)素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04105341.4 | 2004-10-27 | ||
EP04105341 | 2004-10-27 | ||
PCT/IB2005/053476 WO2006046193A1 (en) | 2004-10-27 | 2005-10-24 | Electronic device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008517785A JP2008517785A (ja) | 2008-05-29 |
JP4907544B2 true JP4907544B2 (ja) | 2012-03-28 |
Family
ID=35662312
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007538569A Expired - Fee Related JP4907544B2 (ja) | 2004-10-27 | 2005-10-24 | 電子デバイス |
Country Status (5)
Country | Link |
---|---|
US (1) | US8203402B2 (ja) |
EP (1) | EP1807855B1 (ja) |
JP (1) | JP4907544B2 (ja) |
CN (1) | CN101048839B (ja) |
WO (1) | WO2006046193A1 (ja) |
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US7916980B2 (en) | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
US7649671B2 (en) | 2006-06-01 | 2010-01-19 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device with electrostatic actuation and release |
US7527998B2 (en) | 2006-06-30 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of manufacturing MEMS devices providing air gap control |
US8115987B2 (en) | 2007-02-01 | 2012-02-14 | Qualcomm Mems Technologies, Inc. | Modulating the intensity of light from an interferometric reflector |
US7643202B2 (en) | 2007-05-09 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | Microelectromechanical system having a dielectric movable membrane and a mirror |
CN101682315B (zh) | 2007-06-13 | 2012-08-29 | Nxp股份有限公司 | 用于可调mems电容器的控制器 |
US7630121B2 (en) | 2007-07-02 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
US7813029B2 (en) | 2007-07-31 | 2010-10-12 | Qualcomm Mems Technologies, Inc. | Devices and methods for enhancing color shift of interferometric modulators |
EP2191320A2 (en) * | 2007-09-17 | 2010-06-02 | Qualcomm Mems Technologies, Inc. | Semi-transparent / transflective lighted interferometric modulator devices |
WO2009052326A2 (en) | 2007-10-19 | 2009-04-23 | Qualcomm Mems Technologies, Inc. | Display with integrated photovoltaics |
US8058549B2 (en) | 2007-10-19 | 2011-11-15 | Qualcomm Mems Technologies, Inc. | Photovoltaic devices with integrated color interferometric film stacks |
US8941631B2 (en) | 2007-11-16 | 2015-01-27 | Qualcomm Mems Technologies, Inc. | Simultaneous light collection and illumination on an active display |
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US7944604B2 (en) | 2008-03-07 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Interferometric modulator in transmission mode |
US7612933B2 (en) | 2008-03-27 | 2009-11-03 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with spacing layer |
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US8580596B2 (en) * | 2009-04-10 | 2013-11-12 | Nxp, B.V. | Front end micro cavity |
KR20120090772A (ko) | 2009-05-29 | 2012-08-17 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 조명장치 및 그의 제조방법 |
KR101149433B1 (ko) * | 2009-08-28 | 2012-05-22 | 삼성모바일디스플레이주식회사 | 플렉서블 표시 장치 및 그 제조 방법 |
US8270062B2 (en) | 2009-09-17 | 2012-09-18 | Qualcomm Mems Technologies, Inc. | Display device with at least one movable stop element |
US8488228B2 (en) | 2009-09-28 | 2013-07-16 | Qualcomm Mems Technologies, Inc. | Interferometric display with interferometric reflector |
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US8921144B2 (en) * | 2010-06-25 | 2014-12-30 | International Business Machines Corporation | Planar cavity MEMS and related structures, methods of manufacture and design structures |
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US9057872B2 (en) | 2010-08-31 | 2015-06-16 | Qualcomm Mems Technologies, Inc. | Dielectric enhanced mirror for IMOD display |
US8963159B2 (en) | 2011-04-04 | 2015-02-24 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US9134527B2 (en) | 2011-04-04 | 2015-09-15 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
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-
2005
- 2005-10-24 CN CN200580036701XA patent/CN101048839B/zh not_active Expired - Fee Related
- 2005-10-24 WO PCT/IB2005/053476 patent/WO2006046193A1/en active Application Filing
- 2005-10-24 EP EP05794816.8A patent/EP1807855B1/en active Active
- 2005-10-24 US US11/718,137 patent/US8203402B2/en active Active
- 2005-10-24 JP JP2007538569A patent/JP4907544B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1807855A1 (en) | 2007-07-18 |
WO2006046193A1 (en) | 2006-05-04 |
US8203402B2 (en) | 2012-06-19 |
EP1807855B1 (en) | 2015-09-09 |
CN101048839A (zh) | 2007-10-03 |
JP2008517785A (ja) | 2008-05-29 |
CN101048839B (zh) | 2010-11-17 |
US20090211885A1 (en) | 2009-08-27 |
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