JP4889779B2 - 光電変換モジュール - Google Patents
光電変換モジュール Download PDFInfo
- Publication number
- JP4889779B2 JP4889779B2 JP2009250042A JP2009250042A JP4889779B2 JP 4889779 B2 JP4889779 B2 JP 4889779B2 JP 2009250042 A JP2009250042 A JP 2009250042A JP 2009250042 A JP2009250042 A JP 2009250042A JP 4889779 B2 JP4889779 B2 JP 4889779B2
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- electrode
- conversion module
- transparent conductive
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 73
- 239000000758 substrate Substances 0.000 claims description 26
- 238000010248 power generation Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000013532 laser treatment Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (5)
- 基板上に、透明導電層、発電層及び裏面電極を順に積層してなる光電変換素子と、
前記光電変換素子で生成される電流を集電するための集電電極と、を備え、
前記集電電極は、前記裏面電極と、前記透明導電層及び前記基板の少なくとも一方と、に跨って形成されていることを特徴とする光電変換モジュール。 - 請求項1に記載の光電変換モジュールであって、
前記集電電極は、前記裏面電極上の面積より、前記透明導電層及び前記基板上の面積が広いことを特徴とする光電変換モジュール。 - 請求項1又は2に記載の光電変換モジュールであって、
前記集電電極の外側に前記透明導電層、前記発電層及び前記裏面電極の少なくとも1つが残された島部を有することを特長とする光電変換モジュール。 - 請求項1又は2に記載の光電変換モジュールであって、
前記集電電極は、前記透明導電層上に形成されている場合に前記透明導電層の端部も覆うように形成されていることを特徴とする光電変換モジュール。 - 請求項1〜4のいずれか1つに記載の光電変換モジュールであって、
前記集電電極からさらに集電を行う電極を備え、
当該電極は、前記透明導電層及び前記基板の少なくとも一方の上に形成された前記集電電極上に跨って形成されていることを特徴とする光電変換モジュール。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009250042A JP4889779B2 (ja) | 2009-10-30 | 2009-10-30 | 光電変換モジュール |
US13/389,892 US20120138143A1 (en) | 2009-10-30 | 2010-10-21 | Photoelectric conversion module |
CN2010800358740A CN102473758A (zh) | 2009-10-30 | 2010-10-21 | 光电转换模块 |
PCT/JP2010/068610 WO2011052479A1 (ja) | 2009-10-30 | 2010-10-21 | 光電変換モジュール |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009250042A JP4889779B2 (ja) | 2009-10-30 | 2009-10-30 | 光電変換モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011096880A JP2011096880A (ja) | 2011-05-12 |
JP4889779B2 true JP4889779B2 (ja) | 2012-03-07 |
Family
ID=43921902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009250042A Active JP4889779B2 (ja) | 2009-10-30 | 2009-10-30 | 光電変換モジュール |
Country Status (4)
Country | Link |
---|---|
US (1) | US20120138143A1 (ja) |
JP (1) | JP4889779B2 (ja) |
CN (1) | CN102473758A (ja) |
WO (1) | WO2011052479A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013074117A (ja) * | 2011-09-28 | 2013-04-22 | Kyocera Corp | 光電変換モジュール |
TWI478361B (zh) | 2011-10-20 | 2015-03-21 | Au Optronics Corp | 太陽能電池模組 |
KR20130077010A (ko) * | 2011-12-29 | 2013-07-09 | 주성엔지니어링(주) | 태양전지 및 태양전지의 제조방법 |
WO2014119441A1 (ja) * | 2013-01-30 | 2014-08-07 | 京セラ株式会社 | 光電変換装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5660645A (en) * | 1994-04-28 | 1997-08-26 | Canon Kabushiki Kaisha | Solar cell module |
JP2001135836A (ja) * | 1999-11-02 | 2001-05-18 | Kanegafuchi Chem Ind Co Ltd | 薄膜のスクライブ方法、その装置及び太陽電池モジュール |
JP3146203B1 (ja) * | 1999-09-06 | 2001-03-12 | 鐘淵化学工業株式会社 | 薄膜太陽電池モジュール及びその製造方法 |
JP4504485B2 (ja) * | 1999-10-27 | 2010-07-14 | 株式会社カネカ | 太陽電池用リード線半田付け装置 |
JP3720254B2 (ja) * | 2000-10-13 | 2005-11-24 | シャープ株式会社 | 薄膜太陽電池及びその製造方法 |
JP4966848B2 (ja) * | 2007-12-27 | 2012-07-04 | 三洋電機株式会社 | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
JP2009200445A (ja) * | 2008-02-25 | 2009-09-03 | Sharp Corp | 太陽光発電システム |
-
2009
- 2009-10-30 JP JP2009250042A patent/JP4889779B2/ja active Active
-
2010
- 2010-10-21 WO PCT/JP2010/068610 patent/WO2011052479A1/ja active Application Filing
- 2010-10-21 CN CN2010800358740A patent/CN102473758A/zh active Pending
- 2010-10-21 US US13/389,892 patent/US20120138143A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20120138143A1 (en) | 2012-06-07 |
WO2011052479A1 (ja) | 2011-05-05 |
CN102473758A (zh) | 2012-05-23 |
JP2011096880A (ja) | 2011-05-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4703433B2 (ja) | 光起電力装置 | |
JP5081389B2 (ja) | 光起電力装置の製造方法 | |
US20150194552A1 (en) | Solar cell module and method for manufacturing the solar cell module | |
JP4425296B2 (ja) | 光起電力装置 | |
JP5084133B2 (ja) | 光起電力素子、光起電力モジュールおよび光起電力モジュールの製造方法 | |
WO2008038553A1 (en) | Solar cell module | |
JP5642355B2 (ja) | 太陽電池モジュール | |
US20130139885A1 (en) | Photoelectric conversion device and method for producing same | |
JP4902472B2 (ja) | 太陽電池及び太陽電池モジュール | |
JP4889779B2 (ja) | 光電変換モジュール | |
WO2009099180A1 (ja) | 太陽電池モジュール | |
WO2010150675A1 (ja) | 太陽電池モジュールおよび太陽電池モジュールの製造方法 | |
WO2011129083A1 (ja) | 太陽電池モジュールおよびその製造方法 | |
JP5274432B2 (ja) | 光電変換装置 | |
JP2010067752A (ja) | 光起電力装置および光起電力装置の製造方法 | |
JP2008159799A (ja) | 光起電力装置 | |
JP6025123B2 (ja) | 太陽電池モジュール | |
JP2009283982A (ja) | 薄膜太陽電池モジュールの製造方法 | |
JP2010093308A (ja) | 薄膜太陽電池モジュールの製造方法 | |
JP2010093309A (ja) | 薄膜太陽電池モジュールの製造方法 | |
WO2010134467A1 (ja) | 太陽電池の製造方法 | |
US20110017260A1 (en) | Solar cell module | |
JP2012234936A (ja) | 光電変換モジュール及びその製造方法 | |
JP2001111079A (ja) | 光電変換装置の製造方法 | |
JP6191925B2 (ja) | 太陽電池モジュール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111012 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20111013 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20111107 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20111115 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111213 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 4889779 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141222 Year of fee payment: 3 |