JP4875622B2 - 半導体装置の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 110
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims description 88
- 238000000034 method Methods 0.000 claims description 82
- 238000000926 separation method Methods 0.000 claims description 81
- 239000004020 conductor Substances 0.000 claims description 47
- 238000002955 isolation Methods 0.000 claims description 32
- 239000010410 layer Substances 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 26
- 239000011229 interlayer Substances 0.000 claims description 25
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 118
- 230000008569 process Effects 0.000 description 51
- 230000015572 biosynthetic process Effects 0.000 description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 13
- 239000012535 impurity Substances 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
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- 238000004140 cleaning Methods 0.000 description 4
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
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- 238000011982 device technology Methods 0.000 description 2
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- 239000000463 material Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
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- 238000007517 polishing process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
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- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/25—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Element Separation (AREA)
Description
前記所望の半導体基板の第1面から第2面に貫通して設けられ、複数枚の半導体基板の集積回路同士を電気的に接続する貫通電極と、前記所望の半導体基板の第1面の面内において、前記貫通電極から離間した位置に前記貫通電極を取り囲むように設けられ、前記所望の半導体基板の第1面から第2面に貫通して設けられた貫通分離部とを有するパターンにおいて、前記貫通電極が配置される領域が活性領域とされているものである。
Claims (7)
- (a)所望の半導体基板の第1面に活性領域を規定する分離部を形成する工程と、
(b)前記分離部の上面から前記分離部より深い領域に達する分離溝を形成する工程と、
(c)前記分離溝の内面に熱酸化法により第1絶縁膜を形成する工程と、
(d)前記(c)工程の後、前記分離溝内に埋込膜を形成し、続いて前記埋込膜の下地を一部露出する工程と、
(e)前記所望の半導体基板の第1面上に集積回路を構成する半導体素子を形成する工程と、
(f)前記(d)工程の後、前記半導体素子を覆うように前記所望の半導体基板の第1面上に層間絶縁膜を形成する工程と、
(g)前記層間絶縁膜の上面から前記分離部より深い領域に達する導通溝を、前記活性領域に形成する工程と、
(h)前記導通溝内に導電膜を形成した後、前記層間絶縁膜の上面を露出する工程と、
(i)前記半導体素子と前記導電膜とを電気的に接続する配線層を形成する工程と、
(j)前記半導体基板の第1面の反対側の第2面を研磨して前記第1絶縁膜および前記導電膜を露出することにより、前記埋込膜からなる貫通分離部と、前記導電膜からなる貫通電極とを形成する工程と、
を有し、
前記貫通電極は、複数枚の半導体基板の集積回路同士を電気的に接続し、
前記所望の半導体基板の第1面の面内において、前記貫通電極から離間した位置に前記貫通電極を取り囲むように前記貫通分離部が形成されていることを特徴とする半導体装置の製造方法。 - 前記(a)工程では、前記分離部を形成することにより前記所望の半導体基板の第1面である前記活性領域と前記活性領域の周囲のダミー活性領域とを規定し、
前記貫通電極の周囲には前記ダミー活性領域が配置されていることを特徴とする請求項1記載の半導体装置の製造方法。 - 前記(a)工程では、前記所望の半導体基板の第1面に溝を形成した後、前記溝内に第2絶縁膜を埋め込み、続いて前記第2絶縁膜の下地を一部露出することで、前記溝内の前記第2絶縁膜からなる前記分離部を形成することを特徴とする請求項1記載の半導体装置の製造方法。
- 前記埋込膜は半導体膜を含むことを特徴とする請求項1記載の半導体装置の製造方法。
- (d1)前記(d)工程の後、前記(f)工程の前に、前記埋込膜上に第3絶縁膜を形成して前記分離溝を埋め込む工程と、
(d2)前記(f)工程の前に、前記第3絶縁膜を研磨して前記第3絶縁膜の下地を一部露出することで前記分離溝内に前記第3絶縁膜を残す工程と、
をさらに有することを特徴とする請求項1記載の半導体装置の製造方法。 - 前記第3絶縁膜は、前記分離部を構成する第2絶縁膜と同一のエッチングレートを有する絶縁材料からなることを特徴とする請求項5記載の半導体装置の製造方法。
- 前記配線層と前記貫通電極とを接続する接続部は、前記貫通電極を構成する前記導体膜の上面内において前記導体膜を構成する膜の合わせ目を避けて配置されていることを特徴とする請求項1記載の半導体装置の製造方法。
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JP2007532200A JP4875622B2 (ja) | 2005-08-26 | 2006-08-25 | 半導体装置の製造方法 |
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JP2005245552 | 2005-08-26 | ||
JP2005245552 | 2005-08-26 | ||
JP2007532200A JP4875622B2 (ja) | 2005-08-26 | 2006-08-25 | 半導体装置の製造方法 |
PCT/JP2006/316734 WO2007023947A1 (ja) | 2005-08-26 | 2006-08-25 | 半導体装置の製造方法および半導体装置 |
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JPWO2007023947A1 JPWO2007023947A1 (ja) | 2009-03-05 |
JP4875622B2 true JP4875622B2 (ja) | 2012-02-15 |
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US (1) | US8354730B2 (ja) |
JP (1) | JP4875622B2 (ja) |
TW (1) | TWI416663B (ja) |
WO (1) | WO2007023947A1 (ja) |
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US8630033B2 (en) | 2008-12-23 | 2014-01-14 | Silex Microsystems Ab | Via structure and method thereof |
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JP2012164702A (ja) * | 2011-02-03 | 2012-08-30 | Elpida Memory Inc | 半導体装置 |
US8975751B2 (en) | 2011-04-22 | 2015-03-10 | Tessera, Inc. | Vias in porous substrates |
JP2013115382A (ja) * | 2011-11-30 | 2013-06-10 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US20160247879A1 (en) | 2015-02-23 | 2016-08-25 | Polar Semiconductor, Llc | Trench semiconductor device layout configurations |
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JPH11261000A (ja) | 1998-03-13 | 1999-09-24 | Japan Science & Technology Corp | 3次元半導体集積回路装置の製造方法 |
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JP3696208B2 (ja) * | 2003-01-22 | 2005-09-14 | 株式会社東芝 | 半導体装置 |
JP2005026582A (ja) | 2003-07-04 | 2005-01-27 | Olympus Corp | 半導体装置及びその半導体装置の製造方法 |
JP2005191331A (ja) * | 2003-12-26 | 2005-07-14 | Nec Electronics Corp | 半導体装置の製造方法 |
JP4408713B2 (ja) * | 2004-02-03 | 2010-02-03 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP4439976B2 (ja) * | 2004-03-31 | 2010-03-24 | Necエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US7946331B2 (en) * | 2005-06-14 | 2011-05-24 | Cufer Asset Ltd. L.L.C. | Pin-type chip tooling |
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- 2006-08-25 WO PCT/JP2006/316734 patent/WO2007023947A1/ja active Application Filing
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JPS6167932A (ja) * | 1984-09-12 | 1986-04-08 | Oki Electric Ind Co Ltd | 半導体集積回路装置の製造方法 |
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JP2002289623A (ja) * | 2001-03-28 | 2002-10-04 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2003151978A (ja) * | 2001-10-18 | 2003-05-23 | Hewlett Packard Co <Hp> | ウェーハの諸部分を電気的に分離するためのシステム |
US20050101054A1 (en) * | 2002-04-05 | 2005-05-12 | Stmicroelectronics S.R.L. | Process for manufacturing a through insulated interconnection in a body of semiconductor material |
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JP2008547206A (ja) * | 2005-06-14 | 2008-12-25 | キュービック・ウエハ・インコーポレーテッド | チップの架橋接続 |
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JPWO2007023947A1 (ja) | 2009-03-05 |
US8354730B2 (en) | 2013-01-15 |
TWI416663B (zh) | 2013-11-21 |
US20100090307A1 (en) | 2010-04-15 |
TW200746357A (en) | 2007-12-16 |
WO2007023947A1 (ja) | 2007-03-01 |
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