JP4868833B2 - 半導体発光素子及び発光装置 - Google Patents
半導体発光素子及び発光装置 Download PDFInfo
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- JP4868833B2 JP4868833B2 JP2005340865A JP2005340865A JP4868833B2 JP 4868833 B2 JP4868833 B2 JP 4868833B2 JP 2005340865 A JP2005340865 A JP 2005340865A JP 2005340865 A JP2005340865 A JP 2005340865A JP 4868833 B2 JP4868833 B2 JP 4868833B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 200
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000009792 diffusion process Methods 0.000 claims abstract description 38
- 230000002265 prevention Effects 0.000 claims abstract description 19
- 229910000679 solder Inorganic materials 0.000 claims description 33
- 238000002844 melting Methods 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 230000008018 melting Effects 0.000 claims description 21
- 239000011347 resin Substances 0.000 abstract description 2
- 229920005989 resin Polymers 0.000 abstract description 2
- 238000005476 soldering Methods 0.000 abstract description 2
- 238000003475 lamination Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 225
- 238000004519 manufacturing process Methods 0.000 description 17
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 16
- 238000005253 cladding Methods 0.000 description 9
- 230000004927 fusion Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 239000007767 bonding agent Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000010931 gold Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Led Device Packages (AREA)
- Led Devices (AREA)
Description
以下、図面を参照して、本発明の第1実施形態を説明する。図1は、本発明による半導体発光素子(発光ダイオード)の断面構造を示す図である。図2は、本発明による発光装置の概略図である。
次に、上記第1実施形態の半導体発光素子の一部を変更した第2実施形態の半導体発光素子について説明する。図18は、第2実施形態による半導体発光素子の断面構造を示す図である。
次に、上記第1実施形態の半導体発光素子の一部を変更した第3実施形態の半導体発光装置について説明する。図22は、第3実施形態による半導体発光素子の断面構造を示す図である。尚、第1実施形態と同様の構成は、同じ符号をつけて説明を省略する。
2 半導体発光素子
2A 半導体発光素子
2B 半導体発光素子
3 保持部材
6 半田層
11 基板
12 n型半導体層
13 活性層
14 p型半導体層
15 p側オーミック電極
16 第1拡散防止層
16a コンタクトホール
17 導電性反射層
17a 第1コンタクト部
18 第2拡散防止層
18a コンタクトホール
19 p側パッド電極
19a 第2コンタクト部
20 n側パッド電極
71 成長基板
72 分離層
73 導電性融着層
74 支持基板
75 n側パッド電極
Claims (7)
- 活性層を含む半導体層と、前記半導体層と接続されるオーミック電極と、外部と接続されるパッド電極とが積層された半導体発光素子において、
前記オーミック電極と前記パッド電極との間に中間導電層を備え、
前記オーミック電極と前記中間導電層とが接続される第1コンタクト部と、前記パッド電極と前記中間導電層とが接続される第2コンタクト部とが、積層方向から視て異なる位置に配置されていることを特徴とする半導体発光素子。 - 活性層を含む半導体層と、前記半導体層と接続されるオーミック電極と、外部と接続されるパッド電極とが積層され、前記半導体層と、前記オーミック電極と、前記パッド電極とが導電性融着層を介して、導電性の支持基板に接続される半導体発光素子において、
前記オーミック電極と前記パッド電極との間に中間導電層を備え、
前記オーミック電極と前記中間導電層とが接続される第1コンタクト部と、前記パッド電極と前記中間導電層とが接続される第2コンタクト部とが、積層方向から視て異なる位置に配置されていることを特徴とする半導体発光素子。 - 前記オーミック電極は、光を透過可能に構成され、
前記中間導電層は、光を反射可能な導電性反射層であることを特徴とする請求項1又は2記載の半導体発光素子。 - 前記中間導電層は、Ag層を含むことを特徴とする請求項3記載の半導体発光素子。
- 前記第1コンタクト部及び前記第2コンタクト部の少なくともいずれか一方が複数形成されていることを特徴とする請求項1〜4のいずれか1項に記載の半導体発光素子。
- 前記オーミック電極と前記中間導電層との間と、前記中間導電層と前記パッド電極との間には、低融点金属の拡散を防止する拡散防止層が形成されていることを特徴とする請求項1〜5のいずれか1項に記載の半導体発光素子。
- 活性層を含む半導体層と、前記半導体層と接続されるオーミック電極と、外部と接続されるパッド電極とが積層された半導体発光素子と、前記半導体発光素子を保持し、前記半導体発光素子からの光を反射する保持部材とを備え、前記半導体発光素子のパッド電極は、半田層によって前記保持部材に取り付けられている発光装置において、
前記半導体発光素子は、
前記オーミック電極と前記パッド電極との間に中間導電層を備え、
前記オーミック電極と前記中間導電層とが接続される第1コンタクト部と、前記パッド電極と前記中間導電層とが接続される第2コンタクト部とが、積層方向から視て異なる位置に配置されていることを特徴とする発光装置。
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007243074A (ja) * | 2006-03-10 | 2007-09-20 | Mitsubishi Cable Ind Ltd | 3族窒化物系発光ダイオード |
JP5682427B2 (ja) * | 2011-04-11 | 2015-03-11 | 日亜化学工業株式会社 | 発光素子 |
JP5767577B2 (ja) * | 2011-12-19 | 2015-08-19 | 株式会社神戸製鋼所 | Led用リードフレームおよびその製造方法 |
KR102075147B1 (ko) * | 2013-06-05 | 2020-02-10 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
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JP3031415B1 (ja) * | 1998-10-06 | 2000-04-10 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
JP2002134822A (ja) * | 2000-10-24 | 2002-05-10 | Sharp Corp | 半導体発光装置およびその製造方法 |
JP4337520B2 (ja) * | 2002-11-25 | 2009-09-30 | 日亜化学工業株式会社 | リッジ導波路型半導体レーザ |
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