JP4855690B2 - キャパシタを有する半導体装置 - Google Patents
キャパシタを有する半導体装置 Download PDFInfo
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- JP4855690B2 JP4855690B2 JP2005038182A JP2005038182A JP4855690B2 JP 4855690 B2 JP4855690 B2 JP 4855690B2 JP 2005038182 A JP2005038182 A JP 2005038182A JP 2005038182 A JP2005038182 A JP 2005038182A JP 4855690 B2 JP4855690 B2 JP 4855690B2
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- conductive layer
- capacitor
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Description
2a,2b,2c,2d,12a,12b,12c,12d LOCOS素子分離領域
3a,3b,3c,13a,13b,13c 拡散層
4,14 第1絶縁層
5,15 下層導電層
6,16 第2絶縁層
7,17 上層導電層
8,9,18,19 金属配線
13a1,13a2,13b1,13b2,13c1,13c2 ソース/ドレイン電極
20a,20b,20c ゲート電極
C1〜Cn 導電層
Claims (3)
- シリコン基板上に複数のLOCOS素子分離領域と導電層である拡散層とを互いに隣接するように形成して凹凸面を形成し、この凹凸面上に、絶縁層と導電層とを交互に複数重ねて形成して、前記各絶縁層を誘電体層とし、前記各絶縁層を挟む上下の前記拡散層を含む各導電層を一対の電極とするキャパシタを複数構成する一方、前記シリコン基板上に前記各拡散層をソース/ドレイン電極とするトランジスタを形成し、前記各拡散層を前記ソース/ドレイン電極の一方で共通接続するとともに、この共通接続した拡散層を含む各導電層を一つおきに電気的に接続したことを特徴とするキャパシタを有する半導体装置。
- シリコン基板上に複数のLOCOS素子分離領域と導電層である拡散層とを互いに隣接するように形成して凹凸面を形成し、この凹凸面上に、第1絶縁層と、下層導電層と、第2絶縁層と、上層導電層とを順次重ねて形成することによって、前記各拡散層と前記下層導電層とを一対の電極とし前記第1絶縁層を誘電体層とするキャパシタと、前記下層導電層と前記上層導電層とを一対の電極とし前記第2絶縁層を誘電体層とするキャパシタとを構成する一方、前記シリコン基板上に前記各拡散層をソース/ドレイン電極とするトランジスタを形成し、前記各拡散層を前記ソース/ドレイン電極の一方で共通接続して前記上層導電層と電気的に接続したことを特徴とするキャパシタを有する半導体装置。
- 各拡散層の共通接続は、拡散層同士を一端側で一体的に連接してなることを特徴とする請求項1または2に記載のキャパシタを有する半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2005038182A JP4855690B2 (ja) | 2005-02-15 | 2005-02-15 | キャパシタを有する半導体装置 |
Applications Claiming Priority (1)
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JP2005038182A JP4855690B2 (ja) | 2005-02-15 | 2005-02-15 | キャパシタを有する半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006228829A JP2006228829A (ja) | 2006-08-31 |
JP4855690B2 true JP4855690B2 (ja) | 2012-01-18 |
Family
ID=36989952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005038182A Expired - Fee Related JP4855690B2 (ja) | 2005-02-15 | 2005-02-15 | キャパシタを有する半導体装置 |
Country Status (1)
Country | Link |
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JP (1) | JP4855690B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7031779B1 (ja) * | 2020-10-30 | 2022-03-08 | 株式会社明電舎 | 可変コンデンサ |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53112075A (en) * | 1977-10-18 | 1978-09-30 | Sanyo Electric Co Ltd | Digital capacitor |
JPH0240946A (ja) * | 1988-07-31 | 1990-02-09 | Nec Corp | 半導体集積回路 |
JPH0613571A (ja) * | 1992-06-25 | 1994-01-21 | Texas Instr Japan Ltd | 半導体装置 |
JP3204449B2 (ja) * | 1997-09-24 | 2001-09-04 | 三菱電機株式会社 | 半導体装置 |
JP2002368119A (ja) * | 2001-06-11 | 2002-12-20 | Sony Corp | 半導体装置およびその製造方法 |
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2005
- 2005-02-15 JP JP2005038182A patent/JP4855690B2/ja not_active Expired - Fee Related
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JP2006228829A (ja) | 2006-08-31 |
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