JP4852802B2 - Lead frame - Google Patents

Lead frame Download PDF

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Publication number
JP4852802B2
JP4852802B2 JP2001207316A JP2001207316A JP4852802B2 JP 4852802 B2 JP4852802 B2 JP 4852802B2 JP 2001207316 A JP2001207316 A JP 2001207316A JP 2001207316 A JP2001207316 A JP 2001207316A JP 4852802 B2 JP4852802 B2 JP 4852802B2
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JP
Japan
Prior art keywords
lead frame
plating
lead
metal plate
palladium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001207316A
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Japanese (ja)
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JP2003078097A (en
Inventor
一則 飯谷
陽一郎 濱田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
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Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2001207316A priority Critical patent/JP4852802B2/en
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to EP02743870A priority patent/EP1406300B1/en
Priority to KR1020037003365A priority patent/KR100908891B1/en
Priority to PCT/JP2002/006933 priority patent/WO2003007373A1/en
Priority to AT02743870T priority patent/ATE546835T1/en
Priority to ES02743870T priority patent/ES2383874T3/en
Priority to EP11153697A priority patent/EP2312630A1/en
Priority to TW091115221A priority patent/TWI264099B/en
Priority to KR1020097000226A priority patent/KR101021600B1/en
Priority to US10/482,962 priority patent/US7235868B2/en
Priority to CNB028137310A priority patent/CN1317762C/en
Publication of JP2003078097A publication Critical patent/JP2003078097A/en
Priority to HK04110373A priority patent/HK1069010A1/en
Priority to US11/075,878 priority patent/US20050153482A1/en
Priority to US11/706,360 priority patent/US7521295B2/en
Application granted granted Critical
Publication of JP4852802B2 publication Critical patent/JP4852802B2/en
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]

Description

【０００１】
【発明の属する技術分野】
本発明は、半導体装置に用いられるリードフレームに関する。
【０００２】
【従来の技術】
従来、リードフレームは、金属板からエッチング加工やプレス加工によってリードフレーム形状に成形され、全面にパラジウム鍍金をした後所定位置に半導体素子を搭載し、これを樹脂封止した後金型等を用いて個片にカットされ、ＩＣチップ等の電子部品として実用に供されていた。
【０００３】
【発明が解決しようとする課題】
近年、リードフレームの仕様は、環境への影響を考慮して、鉛が含まれる外装半田鍍金を止めてリードフレーム全面にパラジウム鍍金を施したものとなっている。しかし、パラジウムは高価な金属材料であるため、全面にパラジウム鍍金を施すことにより、製品コストを上昇させてしまうという問題点があった。
【０００４】
本発明は、従来技術の有するこのような問題点に鑑みてなされたものであり、その目的とするところは、パラジウムの使用量を最少に抑えて安価なリードフレームを提供すると共に、不具合をなくしたリードフレームの製造方法を提供することにある。
【０００５】
【課題を解決するための手段】
上記の目的を達成するため、本発明によるリードフレームは、金属板より成形されるリードフレームにおいて、半導体素子が搭載される部分と金線がボンディングされるリード部表面部分と基板実装面側の半田で接合されるパッド部分にのみ部分的なニッケル鍍金とパラジウム鍍金と金鍍金が施されていて、ボンディングされる部分以外のリード部表面と半田接合部分以外のリード部裏面及びリード部とパッド部の側面には鍍金が施されていないことを特徴としている。
【０００６】
これにより、パラジウム鍍金が施される面積は最少限となるので、全面にパラジウム鍍金を施していた従来のリードフレームに比べて、安価なリードフレームを提供できる。
【０００７】
【発明の実施の形態】
以下、本発明の実施の形態を図示した実施例に基づき説明する。
実施例１
図１は、本発明に係るリードフレームについてその製造方法の一実施例を示す工程図である。図中、１はリードフレームを形成すべき銅板等の金属板、２は金属板１の表裏面上に設置されたドライフィルム、３は金属板１の表面上に設置されたドライフィルム２上に被せられていて遮光剤を用いてリードフレームパターン３ａを形成してなるガラスマスク、４は金属板１の裏面上に設置されたドライフィルム２上に被せられていて金属板１を挟んでリードフレームパターン３ａと対称に遮光剤を用いてリードフレームパターン４ａを形成してなるガラスマスク、５，６は所要の遮光パターンを成形してなるガラスマスク、７は金属板１を挟んで対向設置された複数のエッチング液噴射ノズルである。
【０００８】
次にリードフレームの製造工程を順を追って説明する。先ず、図１（ａ）に示すように、金属板１の表裏面全面にフォトレジストとしての役目をするドライフィルム２を設置した後、リードフレームパターン３ａ，４ａを有するガラスマスク３，４をパターンを位置合わせした状態で表裏面上に被せて、この両面をガラスマスク３，４を介して紫外光で露光する。
【０００９】
露光後ガラスマスク３，４を外してドライフィルム付金属板１を現像液に漬けて現像すれば、図１（ｂ）に示すように紫外光の当たった部分即ち金線接合部や半導体素子搭載部などパラジウム鍍金を施す必要のある部分のドライフィルム２のみが除去される。
【００１０】
次に、これを鍍金槽に入れて図１（ｃ）に拡大して示すようにニッケル（Ni）,パラジウム（Pd）,金（Au）など順次必要な部分に必要な鍍金を行う。かくして、ドライフィルム２を剥離することにより、図１（ｄ）に示すような断面形状の鍍金層１ａ付き金属板１を得ることが出来る。
【００１１】
このようにして得られた鍍金層１ａ付き金属板１の表裏面全体に再びドライフィルム２を設置し、これに、図１（ｅ）に示すように、鍍金を施した部分のみが遮光されるようにパターンを形成したガラスマスク５，６を被せて、両面を再び紫外光で露光する。そして、図１（ｂ）で説明したのと同様にして現像を行い、図１（ｆ）に示したような断面形状を有する鍍金層１ａ付き金属板１を得る。
【００１２】
この鍍金層１ａ付き金属板１の両表面に、図１（ｇ）に示す如く、噴射ノズル７によりエッチング液を吹き付けてエッチング処理を行う。このエッチング処理により、鍍金の施されていない部分の金属は溶解除去されて、最後にドライフィルム２を剥離することにより、図１（ｈ）に示すような断面形状を有する即ち必要最少限の部分のみに鍍金の施された一駒分のリードフレームが得られる。
【００１３】
図１（ａ）〜（ｈ）に至る各工程は、リードフレームの何駒分かを含む長さの金属板が適宜のコンベアーで搬送されることにより連続的に実行され、工程の最後で裁断されて個々のリードフレームが完成する。この説明から明らかなように、各リードフレームには表裏面の必要個所にのみパラジウム鍍金が施される結果となる。
【００１４】
実施例２
図２は、本発明に係るリードフレームについてその製造方法の他の実施例を示す工程図である。図中、図１で用いたのと実質上同一の部材及び部分には同一符号が付されており、それらについての説明は省略されている。図１との比較で明らかなように、図２（ａ）,（ｂ）,（ｃ）及び（ｄ）で示される各工程は、図１のそれらと同じであるので説明は省略し、図２（ｅ）以降に示されている工程について説明する。
【００１５】
図２（e）に示されるように、鍍金層１ａ付き金属板１の両面には、噴射ノズル７によりエッチング液を吹き付けられてエッチング処理が行なわれる。このエッチング処理は、鍍金の施されていない部分の金属が殆ど溶解除去されて極薄となる程度まで行われる。
【００１６】
かくして得られた鍍金層１ａ付き金属板１の一側全面に、図２（ｆ）に示すようにテープ８を貼着した後、図２（ｇ）に示すようにテープ８の貼着されていない側から、再び噴射ノズル７によりエッチング液を吹き付けてエッチング処理を行ない、極薄にされた鍍金の施されていない金属部分（リード部を繋ぐタイバーや吊りリード部等の組み立て後切断される不要部分）を完全に溶解除去する。この場合、残った鍍金の施されている金属部分即ち半導体素子が搭載されるパッド部やリード部等の必要部分は、図２（ｈ）に示されるように、テープ８により相対位置関係が崩れることなく確実に保持される。
【００１７】
実施例３
図３は、本発明に係るリードフレームについてその製造方法の更に他の実施例を示す工程図である。図中、図１で用いたのと実質上同一の部材及び部分には同一符号が付されており、それらについての説明は省略されている。図１との比較で明らかなように、図３（ａ）及び（ｂ）で示される各工程は、図１のそれらと同じであるので説明は省略し、図３（ｃ）以降に示されている工程について説明する。
【００１８】
図３（ｃ）に示されるように、リードフレームパターンに対応してドライフィルム２が残された金属板１の両面には、噴射ノズル７によりエッチング液が吹き付けられてエッチング処理が行なわれる。このエッチング処理は、ドライフィルム２の存在しない部分の金属が溶解除去されて、図３（ｄ）に示されるように金属板１が穴明きの状態になるまで行われる。このようにして穴明き状態にされた金属板１の両表面からドライフィルム２が剥離されて、図３（ｄ）に示された如き横断面を有するリードフレーム素材が製作される。
【００１９】
かくして得られたリードフレーム素材（金属板１）の表裏面の必要個所に、図３（ｅ）に拡大して示したようにニッケル（Ni）鍍金，パラジウム（Pd）鍍金及び金（Au）鍍金が夫々施されて、リードフレームが完成する。即ち、図３（ｆ）に示したように、先ずリードフレーム表裏面全体に下地層としてニッケル（Ni）鍍金が施され、次に図３（ｇ）に示したように、半導体搭載部分と金線ボンディング部分と基板実装面側の半田接合部分との必要最小限個所にのみパラジウム（Pd）鍍金が施され、最後に図３（ｈ）に示したように、リードフレーム表裏面全体に金（Au）が施されて、リードフレームが完成する。このように、リードフレームの完成品は高価なパラジウムの使用量が最小限に抑えられており、従来のリードフレームに比べて安価となる。
【００２０】
実施例４
図４は、本発明に係るリードフレームについてその製造方法の更に他の実施例を示す工程図である。図中、図１で用いたのと実質上同一の部材及び部分には同一符号が付されており、それらについての説明は省略されている。図１との比較で明らかなように、図４（ａ）乃至（ｄ）で示される各工程は、図１のそれらと同じであるので説明は省略し、図４（ｅ）以降に示されている工程について説明する。
【００２１】
この実施例は、２回目の露光及び現像を行わずに、図４（ｅ）に示されたように、図４（ｄ）で得られた鍍金処理済みの金属板１の両面に噴射ノズル７でエッチング液を吹き付けてエッチング処理することにより製品を得るようにした点で、第１実施例とは異なる。この実施例によれば、より安価に製品を提供することが出来る。
【００２２】
【発明の効果】
上述の如く本発明によれば、従来方法による場合に比べて遥かに安価なリードフレームを提供できるばかりか、リード抜けや樹脂破損などの不具合を生じないリードフレームを提供することが出来る。
【図面の簡単な説明】
【図１】 本発明に係るリードフレームについてその製造方法の一実施例を示す工程図である。
【図２】 本発明に係るリードフレームについてその製造方法の他の実施例を示す工程図である。
【図３】 本発明に係るリードフレームについてその製造方法の更に他の実施例を示す工程図である。
【図４】 本発明に係るリードフレームについてその製造方法の更に他の実施例を示す工程図である。
【符号の説明】
１ 金属板
１ａ 鍍金層
２ ドライフィルム
３，４，５，６ ガラスマスク
３ａ リードフレームパターン
７ エッチング液噴射ノズル
８ テープ[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a lead frame used in a semiconductor device.
[0002]
[Prior art]
Conventionally, a lead frame is formed into a lead frame shape by etching or pressing from a metal plate, and after palladium plating is applied to the entire surface, a semiconductor element is mounted in a predetermined position, and this is resin-sealed and then a die is used. It was cut into individual pieces and put into practical use as electronic parts such as IC chips.
[0003]
[Problems to be solved by the invention]
In recent years, the specifications of lead frames have been such that palladium plating is applied to the entire surface of the lead frame by stopping the external solder plating containing lead in consideration of the influence on the environment. However, since palladium is an expensive metal material, there is a problem in that the product cost is increased by applying palladium plating on the entire surface.
[0004]
The present invention has been made in view of such problems of the prior art, and the object of the present invention is to provide an inexpensive lead frame while minimizing the amount of palladium used, and to eliminate problems. Another object of the present invention is to provide a method for manufacturing a lead frame.
[0005]
[Means for Solving the Problems]
In order to achieve the above object, a lead frame according to the present invention comprises a lead frame molded from a metal plate, a portion where a semiconductor element is mounted, a lead portion surface portion where a gold wire is bonded, and a solder on the substrate mounting surface side Only the pad part to be bonded is subjected to partial nickel plating, palladium plating and gold plating, the lead part surface other than the part to be bonded, the back part of the lead part other than the soldered part, and the lead part and pad part. The side is not plated.
[0006]
As a result, the area to which palladium plating is applied is minimized, so that a cheaper lead frame can be provided compared to a conventional lead frame in which palladium plating is applied to the entire surface.
[0007]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described based on illustrated examples.
Example 1
Figure 1 is a process diagram showing an embodiment of its manufacturing method of lead frame according to the present invention. In the figure, 1 is a metal plate such as a copper plate on which a lead frame is to be formed, 2 is a dry film placed on the front and back surfaces of the metal plate 1, and 3 is on a dry film 2 placed on the surface of the metal plate 1. A glass mask 4 which is covered and formed with a light shielding agent to form a lead frame pattern 3a is placed on a dry film 2 placed on the back surface of the metal plate 1, and the lead frame is sandwiched between the metal plates 1. A glass mask formed by forming a lead frame pattern 4a using a light-shielding agent symmetrically with the pattern 3a, 5 and 6 are glass masks formed by forming a required light-shielding pattern, and 7 is placed facing the metal plate 1 across the metal plate 1. A plurality of etching solution injection nozzles;
[0008]
Next, the lead frame manufacturing process will be described in order. First, as shown in FIG. 1A, after a dry film 2 serving as a photoresist is placed on the entire front and back surfaces of the metal plate 1, glass masks 3 and 4 having lead frame patterns 3a and 4a are patterned. Are placed on the front and back surfaces in an aligned state, and both surfaces are exposed with ultraviolet light through the glass masks 3 and 4.
[0009]
If the glass masks 3 and 4 are removed after exposure and the metal plate 1 with a dry film is immersed in a developing solution for development, as shown in FIG. 1 (b), a portion exposed to ultraviolet light, that is, a gold wire junction or a semiconductor element mounted Only the portion of the dry film 2 that needs to be plated with palladium is removed.
[0010]
Next, this is put in a plating tank, and necessary plating is sequentially performed on necessary portions such as nickel (Ni), palladium (Pd), and gold (Au) as shown in an enlarged view in FIG. Thus, by peeling off the dry film 2, the metal plate 1 with the plating layer 1a having a cross-sectional shape as shown in FIG. 1 (d) can be obtained.
[0011]
The dry film 2 is again placed on the entire front and back surfaces of the metal plate 1 with the plating layer 1a obtained in this way, and only the plated portion is shielded from light, as shown in FIG. 1 (e). The glass masks 5 and 6 having the pattern formed thereon are covered, and both surfaces are exposed again with ultraviolet light. Then, development is performed in the same manner as described with reference to FIG. 1B to obtain a metal plate 1 with a plating layer 1a having a cross-sectional shape as shown in FIG.
[0012]
As shown in FIG. 1G, an etching solution is sprayed onto the both surfaces of the metal plate 1 with the plating layer 1a by an injection nozzle 7 to perform an etching process. By this etching process, the metal in the part not plated is dissolved and removed, and finally the dry film 2 is peeled off to have a cross-sectional shape as shown in FIG. Only one frame of lead frame is obtained.
[0013]
Each process leading to FIGS. 1A to 1H is continuously executed by transporting a metal plate having a length including several frames of the lead frame by an appropriate conveyor, and is cut at the end of the process. Thus, individual lead frames are completed. As apparent from this explanation, each lead frame is subjected to palladium plating only at necessary portions on the front and back surfaces.
[0014]
Example 2
Figure 2 is a process diagram showing another embodiment of a manufacturing method of that for the lead frame according to the present invention. In the figure, members and portions that are substantially the same as those used in FIG. 1 are given the same reference numerals, and descriptions thereof are omitted. As is clear from comparison with FIG. 1, the steps shown in FIGS. 2 (a), (b), (c) and (d) are the same as those in FIG. The steps shown in 2 (e) and after will be described.
[0015]
As shown in FIG. 2 (e), an etching process is performed by spraying an etching solution on both surfaces of the metal plate 1 with the plating layer 1a by the spray nozzle 7. This etching process is performed to such an extent that the metal in the portion where the plating is not applied is almost completely dissolved and removed.
[0016]
After affixing the tape 8 as shown in FIG. 2 (f) to the entire surface of the metal plate 1 with the plating layer 1a thus obtained, the tape 8 is affixed as shown in FIG. 2 (g). Etching treatment is performed again by spraying the etching solution from the nozzle 7 with the spray nozzle 7, and the metal parts that are made extremely thin and not plated (the tie bar that connects the lead parts, the suspension lead parts, etc. are not cut after being assembled) Part) is completely dissolved and removed. In this case, as shown in FIG. 2 (h), the relative positional relationship of the remaining metal parts with plating, that is, necessary parts such as pads and lead parts on which the semiconductor elements are mounted is destroyed by the tape 8. It is securely held without any problems.
[0017]
Example 3
Figure 3 is a process diagram showing still another embodiment of its manufacturing method of lead frame according to the present invention. In the figure, members and parts that are substantially the same as those used in FIG. As is clear from the comparison with FIG. 1, the steps shown in FIGS. 3A and 3B are the same as those in FIG. The process is described.
[0018]
As shown in FIG. 3 (c), an etching solution is sprayed by the spray nozzle 7 on both surfaces of the metal plate 1 where the dry film 2 is left corresponding to the lead frame pattern, and an etching process is performed. This etching process is performed until the metal in the portion where the dry film 2 does not exist is dissolved and removed, and the metal plate 1 is in a perforated state as shown in FIG. The dry film 2 is peeled off from both surfaces of the metal plate 1 thus perforated to produce a lead frame material having a cross section as shown in FIG.
[0019]
Nickel (Ni) plating, palladium (Pd) plating, and gold (Au) plating as shown in an enlarged view of FIG. 3 (e) at the necessary positions on the front and back surfaces of the lead frame material (metal plate 1) thus obtained. Is applied to complete the lead frame. That is, as shown in FIG. 3 (f), first, nickel (Ni) plating is applied to the entire front and back surfaces of the lead frame as a base layer, and then, as shown in FIG. Palladium (Pd) plating is applied only to the minimum necessary portions of the wire bonding portion and the solder bonding portion on the board mounting surface side. Finally, as shown in FIG. Au) is applied to complete the lead frame. In this way, the finished lead frame has a minimum amount of expensive palladium used and is less expensive than the conventional lead frame.
[0020]
Example 4
Figure 4 is a process diagram showing still another embodiment of its manufacturing method of lead frame according to the present invention. In the figure, members and portions that are substantially the same as those used in FIG. 1 are given the same reference numerals, and descriptions thereof are omitted. As is clear from the comparison with FIG. 1, the steps shown in FIGS. 4A to 4D are the same as those in FIG. The process is described.
[0021]
In this embodiment, without performing the second exposure and development, as shown in FIG. 4 (e), the injection nozzles 7 are formed on both surfaces of the plated metal plate 1 obtained in FIG. 4 (d). The difference from the first embodiment is that a product is obtained by spraying an etching solution and etching. According to this embodiment, a product can be provided at a lower cost.
[0022]
【The invention's effect】
As described above, according to the present invention, it is possible to provide not only a lead frame that is much cheaper than in the case of the conventional method, but also a lead frame that does not cause problems such as lead disconnection or resin damage.
[Brief description of the drawings]
For a lead frame according to the invention, FIG is a process diagram showing an embodiment of a manufacturing method of that.
For a lead frame according to the present invention; FIG is a process drawing showing another embodiment of a method for producing it.
For a lead frame in accordance with the present invention; FIG is a process diagram showing still another embodiment of a method for producing it.
For lead frame according to the present invention; FIG is a process diagram showing still another embodiment of a method for producing it.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Metal plate 1a Plating layer 2 Dry film 3, 4, 5, 6 Glass mask 3a Lead frame pattern 7 Etching liquid injection nozzle 8 Tape

Claims (1)

金属板より成形されるリードフレームにおいて、半導体素子が搭載される部分と金線がボンディングされるリード部表面部分と基板実装面側の半田で接合されるパッド部分にのみ部分的なニッケル鍍金とパラジウム鍍金と金鍍金が施されていて、ボンディングされる部分以外のリード部表面と半田接合部分以外のリード部裏面及びリード部とパッド部の側面には鍍金が施されていないことを特徴とするリードフレーム。  In a lead frame formed from a metal plate, nickel plating and palladium are only partially applied to the portion where the semiconductor element is mounted, the lead portion surface portion where the gold wire is bonded, and the pad portion where the solder is mounted on the board mounting surface Lead having a plating and a gold plating, and no plating on the surface of the lead portion other than the portion to be bonded, the back surface of the lead portion other than the solder joint portion, and the side surfaces of the lead portion and the pad portion. flame.
JP2001207316A 2001-06-19 2001-07-09 Lead frame Expired - Lifetime JP4852802B2 (en)

Priority Applications (14)

Application Number Priority Date Filing Date Title
JP2001207316A JP4852802B2 (en) 2001-06-19 2001-07-09 Lead frame
CNB028137310A CN1317762C (en) 2001-07-09 2002-07-09 Lead frame and its manufacturing method
PCT/JP2002/006933 WO2003007373A1 (en) 2001-07-09 2002-07-09 Lead frame and its manufacturing method
AT02743870T ATE546835T1 (en) 2001-07-09 2002-07-09 METHOD FOR PRODUCING A CONDUCTOR FRAME
ES02743870T ES2383874T3 (en) 2001-07-09 2002-07-09 Procedure for manufacturing a connection bracket
EP11153697A EP2312630A1 (en) 2001-07-09 2002-07-09 Leadframe and method of manufacturing the same
TW091115221A TWI264099B (en) 2001-07-09 2002-07-09 Lead frame and manufacturing method therefor
KR1020097000226A KR101021600B1 (en) 2001-07-09 2002-07-09 Lead frame and its manufacturing method
EP02743870A EP1406300B1 (en) 2001-07-09 2002-07-09 Method of manufacturing a lead frame
KR1020037003365A KR100908891B1 (en) 2001-07-09 2002-07-09 Lead frame and manufacturing method
US10/482,962 US7235868B2 (en) 2001-07-09 2002-07-09 Lead frame and its manufacturing method
HK04110373A HK1069010A1 (en) 2001-07-09 2004-12-31 Lead frame and its manufacturing method
US11/075,878 US20050153482A1 (en) 2001-07-09 2005-03-10 Leadframe and method of manufacturing the same
US11/706,360 US7521295B2 (en) 2001-07-09 2007-02-15 Leadframe and method of manufacturing the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001185412 2001-06-19
JP2001-185412 2001-06-19
JP2001185412 2001-06-19
JP2001207316A JP4852802B2 (en) 2001-06-19 2001-07-09 Lead frame

Related Child Applications (1)

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JP2011136246A Division JP5531172B2 (en) 2001-06-19 2011-06-20 Lead frame and manufacturing method thereof

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JP2003078097A JP2003078097A (en) 2003-03-14
JP4852802B2 true JP4852802B2 (en) 2012-01-11

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US8375577B2 (en) * 2008-06-04 2013-02-19 National Semiconductor Corporation Method of making foil based semiconductor package
JP2011108818A (en) * 2009-11-17 2011-06-02 Mitsui High Tec Inc Manufacturing method of lead frame and manufacturing method of semiconductor device
JP2014192222A (en) 2013-03-26 2014-10-06 Shinko Electric Ind Co Ltd Lead frame and semiconductor device
JP6156745B2 (en) * 2014-03-19 2017-07-05 Ｓｈマテリアル株式会社 Lead frame for semiconductor device and manufacturing method thereof
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