JP4852756B2 - Method for manufacturing element for organic sensor - Google Patents

Method for manufacturing element for organic sensor Download PDF

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JP4852756B2
JP4852756B2 JP2006315347A JP2006315347A JP4852756B2 JP 4852756 B2 JP4852756 B2 JP 4852756B2 JP 2006315347 A JP2006315347 A JP 2006315347A JP 2006315347 A JP2006315347 A JP 2006315347A JP 4852756 B2 JP4852756 B2 JP 4852756B2
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皓一 新原
久幸 末松
常生 鈴木
忠親 中山
俊太郎 鈴木
崇弘 鈴木
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Nagaoka University of Technology
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Description

本発明は、Ｎｉ、Ｆｅ及びＯを含む粒子の焼結体又は薄膜からなり、有機物の吸着・脱離反応に伴う電気抵抗率の変化を測定することにより有機物を測定するセンサー用素子の製造方法に関する。 The present invention relates to a sensor element manufacturing method comprising a sintered body or a thin film of particles containing Ni, Fe and O, and measuring an organic substance by measuring a change in electrical resistivity accompanying an adsorption / desorption reaction of the organic substance. About.

環境問題の高まりとともに、有機物を測定対象とするセンサーが必要とされており、これまでに種々のセンサーが提案されている。（例えば、特許文献１〜３参照）
特開平５−１８９２８号公報 特開２００３−３１５３００号公報 特開２００３−２６２６２５号公報 As environmental problems increase, sensors for measuring organic substances are required, and various sensors have been proposed so far. (For example, see Patent Documents 1 to 3)
Japanese Patent Laid-Open No. 5-18928 JP 2003-315300 A JP 2003-262625 A

従来の有機物を測定対象とするセンサーは、沸点・融点が低い分子量の小さい有機物を測定するものであり、室温で使用可能なものが殆んどであり、沸点・融点が高く分子量が大きい有機物を測定対象とし、かつ高温で使用可能なセンサーは極めて少なかった。
特許文献１に記載されたセンサーは、炭素微小センサーであるために、高温での有機物センサーとしては機能するが、大気中で高温にすると燃焼してしまうためにその利用が困難であった。特許文献２には、Ｆｅ及びＯを含む半導体からなるセンサーが記載されているが、このセンサーでは高価なＮｂやＢａが必要であり、実用性に欠けるという問題点がある。また、特許文献３に記載のセンサーでは、測定対象とする有機物を捕集管から脱離させることが必要であり、その場測定ができなかった。 Conventional sensors that measure organic substances measure organic substances with a low boiling point / melting point and low molecular weight, and most of them can be used at room temperature, and organic substances with a high boiling point / melting point and high molecular weight can be used. There were very few sensors that could be measured and could be used at high temperatures.
The sensor described in Patent Document 1 functions as an organic sensor at a high temperature because it is a carbon microsensor, but is difficult to use because it burns when heated to high temperature in the atmosphere. Patent Document 2 describes a sensor made of a semiconductor containing Fe and O. However, this sensor requires expensive Nb and Ba and has a problem that it lacks practicality. Moreover, in the sensor described in Patent Document 3, it is necessary to desorb an organic substance to be measured from the collection tube, and in-situ measurement cannot be performed.

本発明者等は、これら従来技術の問題点を解消するために、Ｎｉ，Ｆｅ及びＯからなる電気伝導性酸化物によりセンサーを構成することを、先に提案した。（特許文献４）
特開２００３−１２８４６３号公報 このセンサーは、従来のセンサーよりも優れた性能を有するものではあるが、さらに高感度で沸点・融点が高く分子量が大きい有機物を測定することのできるセンサーが求められていた。 In order to solve these problems of the prior art, the present inventors have previously proposed that a sensor be constituted by an electrically conductive oxide composed of Ni, Fe and O. (Patent Document 4)
JP, 2003-128463, A Although this sensor has the performance superior to the conventional sensor, the sensor which can measure organic substance with higher sensitivity, boiling point, melting point, and high molecular weight is calculated | required. It was.

したがって、本発明は沸点・融点が高く分子量が大きい有機物を高感度で測定することができ、かつ高温でも使用可能なセンサー用素子を低コストで提供することを目的とする。   Accordingly, an object of the present invention is to provide a sensor element that can measure an organic substance having a high boiling point / melting point and a high molecular weight with high sensitivity and that can be used even at a high temperature.

本発明では、上記課題を解決するために、つぎの１〜５の構成を採用するものである。
１．Ｎｉ及びＦｅの硝酸塩をクエン酸水溶液に溶解し、エチレングリコールと重合した後に成形し、大気中で加熱して焼成することを特徴とする、Ｎｉ、Ｆｅ及びＯを含む粒子の焼結体又は薄膜からなり、かさ密度が４５−８０％である有機物センサー用素子の製造方法。
２．Ｎｉ細線とＦｅ細線をより合わせて充電されたコンデンサーに接続し、大気中でパルス通電加熱することにより急速蒸発・酸化させて酸化物粉末を合成し、これを成形後大気中で加熱して焼成することを特徴とする、Ｎｉ、Ｆｅ及びＯを含む粒子の焼結体又は薄膜からなり、かさ密度が４５−８０％である有機物センサー用素子の製造方法。
３．前記粒子がＮｉ，Ｆｅ及びＯのみからなる粒子であることを特徴とする１又は２に記載の有機物センサー用素子の製造方法。
４．測定対象とする有機物の沸点が１１０〜５００℃であることを特徴とする１〜３のいずれかに記載の有機物センサー用素子の製造方法。
５．測定対象とする有機物がキシレン又は酢酸ブチルであることを特徴とする４に記載の有機物センサー用素子の製造方法。 In the present invention, in order to solve the above-mentioned problems, the following configurations 1 to 5 are adopted.
1. A sintered or thin film of particles containing Ni, Fe and O, wherein Ni and Fe nitrates are dissolved in a citric acid solution, polymerized with ethylene glycol, molded, heated and fired in air And a method for producing an organic sensor element having a bulk density of 45-80%.
2. The Ni fine wire and Fe fine wire are combined and connected to a charged capacitor, and pulsed and heated in the atmosphere to rapidly evaporate and oxidize to synthesize oxide powder, which is then heated in the atmosphere and fired A method for producing an organic sensor element comprising a sintered body or thin film of particles containing Ni, Fe and O, and having a bulk density of 45-80%.
3. 3. The method for producing an organic sensor element according to 1 or 2 , wherein the particles are particles composed of only Ni, Fe and O.
4). The method for producing an organic sensor element according to any one of 1 to 3, wherein the organic substance to be measured has a boiling point of 110 to 500 ° C.
5). 5. The method for producing an organic sensor element according to 4, wherein the organic substance to be measured is xylene or butyl acetate .

本発明によれば、沸点・融点が高く分子量が大きい有機物を高感度で測定することができ、かつ高温でも使用可能なセンサー用素子を低コストで得ることができる。本発明の有機物センサー用素子は、測定温度９０〜５００℃、特に１００〜３５０℃の範囲で、測定対象とする有機物の種類や測定条件、或いは素子の製造条件に応じた特定の温度±５℃で、対数電気抵抗率の傾きが０．０２ｌｏｇΩｃｍ／℃以上変化するものであり、測定対象とする有機物の有無を高感度で検知することができる。   According to the present invention, an organic substance having a high boiling point / melting point and a high molecular weight can be measured with high sensitivity, and a sensor element that can be used even at high temperatures can be obtained at low cost. The organic sensor element of the present invention has a measurement temperature of 90 to 500 ° C., particularly 100 to 350 ° C., and a specific temperature ± 5 ° C. according to the type of organic matter to be measured, the measurement conditions, or the manufacturing conditions of the element. Thus, the slope of the logarithmic electrical resistivity changes by 0.02 log Ωcm / ° C. or more, and the presence or absence of an organic substance to be measured can be detected with high sensitivity.

本発明の有機物センサー用素子は、Ｎｉ、Ｆｅ及びＯを含む粒子の焼結体又は薄膜からなり、かさ密度が４５−８０％であることを特徴とする。
この有機センサー用素子は、次の錯体重合法、パルス細線放電法を用いて製造することができる。なお、これらの方法における具体的な数値は、好適な値を例示するものであり、本発明を限定するために記載したものではない。
（錯体重合法）
Ｎｉ及びＦｅの硝酸塩をＮｉとＦｅのモル比で１．００：２．００〜１．０１：２．００となるようにクエン酸水溶液に溶解し、エチレングリコールと重合した後に、これにモル比で０〜０．０７のＺｎ又はＭｇ酸化物粉末を加えて成形し、大気中で加熱してＮ，Ｃを脱離させて酸化物焼結体を得る。
（パルス細線放電法）
長さ２５ｍｍ、直径０．２０ｍｍのＮｉ細線と直径０．３０ｍｍのＦｅ細線をより合わせて電極に設置し、大気中で６ｋｖに充電した２０μＦのコンデンサーを接続してパルス通電加熱することにより急速蒸発・酸化させて酸化物粉末を合成し、これを成形後大気中で加熱して焼結体を得る。 The element for an organic sensor of the present invention comprises a sintered body or a thin film of particles containing Ni, Fe and O, and has a bulk density of 45-80%.
This element for organic sensors can be manufactured using the following complex polymerization method and pulse fine wire discharge method . In addition, the specific numerical value in these methods illustrates a suitable value, and is not described in order to limit this invention.
(Complex polymerization method)
Ni and Fe nitrates were dissolved in an aqueous citric acid solution so that the molar ratio of Ni and Fe was 1.00: 2.00 to 1.01: 2.00 and polymerized with ethylene glycol. Then, 0 to 0.07 Zn or Mg oxide powder is added and molded, and heated in the air to desorb N and C to obtain an oxide sintered body.
(Pulse wire discharge method)
Quickly evaporate by connecting a Ni fine wire with a length of 25 mm and a diameter of 0.20 mm and an Fe fine wire with a diameter of 0.30 mm to the electrode, and connecting a 20 μF capacitor charged to 6 kv in the atmosphere and heating with pulse current. -Oxidize to synthesize oxide powder, which is molded and heated in the atmosphere to obtain a sintered body.

つぎに、実施例により本発明をさらに説明するが、以下の具体例は本発明を限定するものではない。以下の実施例では、えられたセンサー用素子の電気抵抗率は、印加電圧１０〜１００ｍＶの定電圧源と電流計を使用して測定した。また、温度上昇に伴って電気抵抗率の傾きの絶対値が増える場合を正、減る場合を負と表記した。
（実施例１）
硝酸ニッケル６水和物３．０１ｇと硝酸第二鉄９水和物８．０８ｇを、クエン酸水溶液（濃度８２３ｇ／Ｌ）３５ｍＬに溶解させ、エチレングリコール１２．５ｇと温度６０〜１１０℃で１５０分間反応させた。得られたゲルを大気中６００℃で６０分間焼結することによって、かさ密度が５０％で、厚さ３ｍｍ、直径１０ｍｍの焼結体を得た。この焼結体の粉末Ｘ線回折図形を図１に示す。ピーク位置とその強度比から、ＮｉＦｅ２Ｏ４にＮｉＯが１ｖｏｌ％含まれた物質であることが判明した。 EXAMPLES Next, the present invention will be further described with reference to examples, but the following specific examples are not intended to limit the present invention. In the following examples, the electrical resistivity of the obtained sensor element was measured using a constant voltage source with an applied voltage of 10 to 100 mV and an ammeter. In addition, the case where the absolute value of the slope of the electrical resistivity increases as the temperature increases is expressed as positive, and the case where the absolute value decreases decreases as negative.
Example 1
Nickel nitrate hexahydrate 3.01 g and ferric nitrate nonahydrate 8.08 g were dissolved in 35 mL of citric acid aqueous solution (concentration 823 g / L), and ethylene glycol 12.5 g and a temperature of 60 to 110 ° C. were 150. Reacted for 1 minute. The obtained gel was sintered in the atmosphere at 600 ° C. for 60 minutes to obtain a sintered body having a bulk density of 50%, a thickness of 3 mm, and a diameter of 10 mm. The powder X-ray diffraction pattern of this sintered body is shown in FIG. From the peak position and its intensity ratio, it was found that the NiFe 2 O 4 contained 1 vol% NiO.

この焼結体に酢酸ブチル（沸点１２５〜１２６℃）１ｍｇを滴下し、大気中で１００℃から３５０℃まで加熱しながら測定した電気抵抗率を図２に示す。１９０℃での電気抵抗率の傾きが−０．０１５ｌｏｇΩｃｍ／℃から２００℃で＋０．０２５ｌｏｇΩｃｍ／℃と変化し、１９５℃±５℃で０．０４ｌｏｇΩｃｍ／℃と正の変化を示したことが判明した。
比較のために、焼結体に酢酸ブチルを滴下しないで、同様に加熱して測定した電気抵抗率を図３に示す。この場合、電気抵抗率は温度上昇に対して単調に減少し、図２のような電気抵抗率の傾きの急変化はみられなかった。したがって、この焼結体を使用して上記温度範囲での電気抵抗率の変化を測定することによって、酢酸ブチルの検出が可能となる。 FIG. 2 shows the electrical resistivity measured while dropping 1 mg of butyl acetate (boiling point: 125 to 126 ° C.) into this sintered body and heating from 100 ° C. to 350 ° C. in the atmosphere. It was found that the slope of electrical resistivity at 190 ° C changed from -0.015 logΩcm / ° C to +0.025 logΩcm / ° C at 200 ° C, showing a positive change at 0.095 logΩcm / ° C at 195 ° C ± 5 ° C. did.
For comparison, FIG. 3 shows the electrical resistivity measured by heating in the same manner without dropping butyl acetate onto the sintered body. In this case, the electrical resistivity decreased monotonously with increasing temperature, and there was no sudden change in the slope of the electrical resistivity as shown in FIG. Therefore, it is possible to detect butyl acetate by measuring the change in electrical resistivity in the above temperature range using this sintered body.

（実施例２）
実施例１において、硝酸ニッケル６水和物の使用量を２．９８ｇとした以外は、実施例１と同様にして焼結体を得た。この焼結体は、かさ密度５０％で、ＮｉＦｅ２Ｏ４のみにより構成されたものであった。
この焼結体にｏ−キシレン（沸点１４４℃）１ｍｇを滴下し、実施例１と同様にして電気抵抗率を測定したところ、１８０℃±５℃で０．０２ｌｏｇΩｃｍ／℃の負の対数電気抵抗率の傾きの急変化が認められた。 (Example 2)
A sintered body was obtained in the same manner as in Example 1 except that the amount of nickel nitrate hexahydrate used was 2.98 g in Example 1. This sintered body had a bulk density of 50% and was composed only of NiFe 2 O 4 .
1 mg of o-xylene (boiling point 144 ° C.) was dropped into this sintered body, and the electrical resistivity was measured in the same manner as in Example 1. As a result, a negative logarithmic electrical resistance of 0.02 log Ωcm / ° C. at 180 ° C. ± 5 ° C. A sudden change in the slope of the rate was observed.

（参考例１）
ニッケルフェライト粉末を成形し、大気中６００℃で１時間焼結し、直径１０ｍｍ、厚さ３ｍｍ、かさ密度４８％の焼結体を作製した。これに酢酸ブチル０．８６ｍｇ、キシレン０．１４ｍｇを滴下し、実施例１と同様にして電気抵抗率を測定したところ、２１０℃±５℃で０．０２１ｌｏｇΩｃｍ／℃の負の対数電気抵抗率の変化を示した。 ( Reference Example 1 )
Nickel ferrite powder was molded and sintered in the atmosphere at 600 ° C. for 1 hour to produce a sintered body having a diameter of 10 mm, a thickness of 3 mm, and a bulk density of 48%. To this, 0.86 mg of butyl acetate and 0.14 mg of xylene were added dropwise, and the electrical resistivity was measured in the same manner as in Example 1. As a result, the negative logarithmic electrical resistivity of 0.021 log Ωcm / ° C. was measured at 210 ° C. ± 5 ° C. Showed changes.

（参考例２）
参考例１において、焼結温度を１０００℃とした以外は同様にしてかさ密度５１％の焼結体を作製し、同様に電気抵抗率の測定を行った。この結果、２５０℃±５℃で０．０２３ｌｏｇΩｃｍ／℃の負の対数電気抵抗率の変化を示した。 ( Reference Example 2 )
In Reference Example 1 , a sintered body having a bulk density of 51% was prepared in the same manner except that the sintering temperature was 1000 ° C., and the electrical resistivity was measured in the same manner. As a result, a change in negative logarithmic resistivity of 0.023 log Ωcm / ° C. at 250 ° C. ± 5 ° C. was shown.

（実施例３）
長さ２５ｍｍ、直径０．２０ｍｍのＮｉ細線と長さ２５ｍｍ、直径０．３０ｍｍのＦｅ細線をよりあわせ、圧力２００Ｔｏｒｒ大気中において、６ｋＶに充電した２０μＦのコンデンサーに接続し、パルス通電加熱によって細線を蒸発、酸化、微粒子化した。これを８回繰り返し、回収した粉末を酸化アルミニウム基板上に堆積させた。これを大気中６００℃で１時間加熱し、２０×２０×０．３ｍｍの薄膜状焼結体を作製した。これを実施例１と同様にして電気抵抗率を測定したところ、２１０℃±５℃で０．５６ｌｏｇΩｃｍ／℃の負の対数電気抵抗率の変化を示した。 ( Example 3 )
A Ni thin wire with a length of 25 mm and a diameter of 0.20 mm and an Fe fine wire with a length of 25 mm and a diameter of 0.30 mm were combined and connected to a 20 μF capacitor charged at 6 kV in an atmosphere of 200 Torr. Evaporated, oxidized, and atomized. This was repeated 8 times, and the recovered powder was deposited on the aluminum oxide substrate. This was heated in the atmosphere at 600 ° C. for 1 hour to produce a 20 × 20 × 0.3 mm thin-film sintered body. When the electrical resistivity was measured in the same manner as in Example 1, it showed a change in negative logarithmic electrical resistivity of 0.56 log Ωcm / ° C. at 210 ° C. ± 5 ° C.

（参考例３）
参考例１において、酸化ニッケル０．００７ｇとニッケルフェライト２．３４４ｇを混合した粉末を用いた以外は同様にして焼結体を作製し、同様に電気抵抗率の測定を行った。この結果、１９０℃±５℃で０．０８７ｌｏｇΩ／℃の負の対数電気抵抗率の変化を示した。 ( Reference Example 3 )
A sintered body was prepared in the same manner as in Reference Example 1 except that a powder obtained by mixing 0.007 g of nickel oxide and 2.344 g of nickel ferrite was used, and the electrical resistivity was measured in the same manner. As a result, a change in negative logarithmic resistivity of 0.087 log Ω / ° C. was observed at 190 ° C. ± 5 ° C.

（参考例４）
参考例１において、酸化ニッケル０．２２２ｇとニッケルフェライト２．３４４ｇを混合した粉末を用いた以外は同様にして焼結体を作製し、同様に電気抵抗率の測定を行った。この結果、１９０℃±５℃で０．０２６ｌｏｇΩｃｍ／℃の負の対数電気抵抗率の変化を示した。 ( Reference Example 4 )
A sintered body was prepared in the same manner as in Reference Example 1 except that a powder obtained by mixing 0.222 g of nickel oxide and 2.344 g of nickel ferrite was used, and the electrical resistivity was measured in the same manner. As a result, a change in negative logarithmic resistivity of 0.026 log Ωcm / ° C. at 190 ° C. ± 5 ° C. was shown.

（参考例５）
参考例１において、酸化ニッケル粉末を用いた以外は同様にして焼結体を作製し、同様に電気抵抗率の測定を行なった。この結果、１９０℃±５℃で０．０３５ｌｏｇΩｃｍ／℃の正の対数電気抵抗率の変化を示した。 ( Reference Example 5 )
In Reference Example 1 , a sintered body was prepared in the same manner except that nickel oxide powder was used, and the electrical resistivity was measured in the same manner. As a result, a positive logarithmic electrical resistivity change of 0.035 log Ωcm / ° C. was observed at 190 ° C. ± 5 ° C.

（実施例４）
実施例２において、硝酸ニッケル６水和物と硝酸第ニ鉄９水和物をクエン酸水溶液に溶解後に、２８ｍｇのＭｇＯ粉末を添加し得られたゲルを用い、温度６５０℃で焼結した以外は同様にして焼結体を作製した。大気中での加熱温度を２５℃から３５０℃までとした以外は同様にして電気抵抗率の測定を行った。この結果、９０℃±５℃で、０．０２１ｌｏｇΩｃｍ／℃の正の対数電気抵抗率の変化を示した。 ( Example 4 )
In Example 2, after dissolving nickel nitrate hexahydrate and ferric nitrate nonahydrate in an aqueous citric acid solution, a gel obtained by adding 28 mg of MgO powder was used and sintered at a temperature of 650 ° C. In the same manner, a sintered body was produced. The electrical resistivity was measured in the same manner except that the heating temperature in the atmosphere was changed from 25 ° C. to 350 ° C. As a result, a positive logarithmic electrical resistivity change of 0.021 log Ωcm / ° C. was observed at 90 ° C. ± 5 ° C.

（実施例５）
実施例４において、硝酸ニッケル６水和物と硝酸第ニ鉄９水和物をクエン酸水溶液に溶解後に５７ｍｇのＺｎＯ粉末を添加し得られたゲルを用いた以外は同様にして焼結体を作製し、同様の測定を行った。この結果、１００℃±５℃で、０．０３１ｌｏｇΩｃｍ／℃の正の対数電気抵抗率の変化を示した。 ( Example 5 )
In Example 4 , a sintered compact was similarly obtained except that a gel obtained by adding 57 mg of ZnO powder after dissolving nickel nitrate hexahydrate and ferric nitrate nonahydrate in an aqueous citric acid solution was used. The same measurement was performed. As a result, a positive logarithmic electrical resistivity change of 0.031 log Ωcm / ° C. was observed at 100 ° C. ± 5 ° C.

（比較例１）
参考例１と同一の粉末を１２００℃で焼成し、かさ密度８２％の焼結体を作製した。この焼結体を用いて参考例１と同様にして測定した結果、図３とほぼ同一の電気抵抗率温度依存性が発現し、有機物検知特性が非常に弱いことが判明した。 (Comparative Example 1)
The same powder as in Reference Example 1 was fired at 1200 ° C. to produce a sintered body having a bulk density of 82%. As a result of measurement using this sintered body in the same manner as in Reference Example 1 , it was found that substantially the same electrical resistivity temperature dependency as in FIG. 3 was developed, and the organic matter detection characteristics were very weak.

（比較例２）
参考例１と同一の粉末を５００℃で焼成し、かさ密度３５％の焼結体を作製した。この焼結体は、著しく強度が低いために電気抵抗率温度依存性測定が出来ず、有機物検知特性がないことが判明した。 (Comparative Example 2)
The same powder as in Reference Example 1 was fired at 500 ° C. to produce a sintered body having a bulk density of 35%. Since this sintered body is extremely low in strength, it cannot be measured for electric resistivity temperature dependency, and it has been found that there is no organic matter detection characteristic.

上記の各例にみられるように、本発明の有機物センサー用素子では、そのかさ密度を４５−８０％とすることによって、沸点・融点が高く分子量が大きい有機物を、高温環境下でも高感度で測定することができるものである。   As seen in each of the above examples, in the organic sensor element of the present invention, by setting the bulk density to 45-80%, an organic substance having a high boiling point / melting point and a high molecular weight can be obtained with high sensitivity even in a high temperature environment. It can be measured.

実施例１で得られた焼結体の粉末Ｘ線回折図である。2 is a powder X-ray diffraction pattern of the sintered body obtained in Example 1. FIG. 実施例１で得られた焼結体に酢酸ブチルを滴下して測定した電気抵抗率を示す図である。It is a figure which shows the electrical resistivity measured by dripping butyl acetate to the sintered compact obtained in Example 1. FIG. 実施例１で得られた焼結体に酢酸ブチルを滴下しないで測定した電気抵抗率を示す図である。It is a figure which shows the electrical resistivity measured without dripping butyl acetate in the sintered compact obtained in Example 1. FIG.

Claims (5)

Ｎｉ及びＦｅの硝酸塩をクエン酸水溶液に溶解し、エチレングリコールと重合した後に成形し、大気中で加熱して焼成することを特徴とする、Ｎｉ、Ｆｅ及びＯを含む粒子の焼結体又は薄膜からなり、かさ密度が４５−８０％である有機物センサー用素子の製造方法。A sintered or thin film of particles containing Ni, Fe and O, wherein Ni and Fe nitrates are dissolved in a citric acid solution, polymerized with ethylene glycol, molded, heated and fired in air And a method for producing an organic sensor element having a bulk density of 45-80%. Ｎｉ細線とＦｅ細線をより合わせて充電されたコンデンサーに接続し、大気中でパルス通電加熱することにより急速蒸発・酸化させて酸化物粉末を合成し、これを成形後大気中で加熱して焼成することを特徴とする、Ｎｉ、Ｆｅ及びＯを含む粒子の焼結体又は薄膜からなり、かさ密度が４５−８０％である有機物センサー用素子の製造方法。The Ni fine wire and Fe fine wire are combined and connected to a charged capacitor, and pulsed and heated in the atmosphere to rapidly evaporate and oxidize to synthesize oxide powder, which is then heated in the atmosphere and fired A method for producing an organic sensor element comprising a sintered body or thin film of particles containing Ni, Fe and O, and having a bulk density of 45-80%. 前記粒子がＮｉ，Ｆｅ及びＯのみからなる粒子であることを特徴とする請求項１又は２に記載の有機物センサー用素子の製造方法。 The method for producing an organic sensor element according to claim 1 , wherein the particles are particles composed of only Ni, Fe, and O. 4 . 測定対象とする有機物の沸点が１１０〜５００℃であることを特徴とする請求項１〜３のいずれかに記載の有機物センサー用素子の製造方法。 The method for producing an organic sensor element according to any one of claims 1 to 3, wherein the organic substance to be measured has a boiling point of 110 to 500 ° C. 測定対象とする有機物がキシレン又は酢酸ブチルであることを特徴とする請求項４に記載の有機物センサー用素子の製造方法。 5. The method for producing an organic sensor element according to claim 4, wherein the organic substance to be measured is xylene or butyl acetate .
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