JP4852395B2 - リソグラフィ装置 - Google Patents
リソグラフィ装置 Download PDFInfo
- Publication number
- JP4852395B2 JP4852395B2 JP2006307883A JP2006307883A JP4852395B2 JP 4852395 B2 JP4852395 B2 JP 4852395B2 JP 2006307883 A JP2006307883 A JP 2006307883A JP 2006307883 A JP2006307883 A JP 2006307883A JP 4852395 B2 JP4852395 B2 JP 4852395B2
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- Prior art keywords
- radiation beam
- radiation
- lithographic apparatus
- metal layer
- measurement
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
- G01N21/552—Attenuated total reflection
- G01N21/553—Attenuated total reflection and using surface plasmons
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
Landscapes
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Atmospheric Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Description
Claims (4)
- 表面プラズモン共鳴を用いてリソグラフィ装置内の光学表面の汚染を検出するように配置された計測装置を有し、
前記計測装置は、
前記リソグラフィ装置内であって露光用の放射ビームの経路以外の箇所に配置された計測表面をもつ金属層と、
前記金属層の前記計測表面を被覆する導波層と、
計測用の放射ビームを出射する放射源と、
前記金属層の前記計測表面の裏面上または当該裏面の近傍に設けられ、前記放射源からの前記放射ビームを所定の角度で前記金属層に入射させるプリズムと、
前記放射ビームが前記金属層を介して前記導波層へ結合し、前記導波層に沿って伝播した光を検出するディテクタと、
を備えるリソグラフィ装置。 - 表面プラズモン共鳴を用いてリソグラフィ装置内の光学表面の汚染を検出するように配置された計測装置を有し、
前記計測装置は、
前記リソグラフィ装置内であって露光用の放射ビームの経路以外の箇所に配置され、一方面に計測表面を備え、他方面に格子構造を備える金属層と、
前記金属層の計測表面に対して垂直方向に計測用の放射ビームを出射する放射源と、
前記計測用の放射ビームが前記格子構造により回折されて生じる回折光を検出するディテクタと、
を備えるリソグラフィ装置。 - 表面プラズモン共鳴を用いてリソグラフィ装置内の光学表面の汚染を検出するように配置された計測装置を有し、
前記計測装置は、
前記リソグラフィ装置内であって露光用の放射ビームの経路以外の箇所に配置された計測表面をもつ金属層と、
計測用の第1放射ビームを出射する放射源と、
前記金属層の前記計測表面の裏面上または当該裏面の近傍に設けられ、前記放射源からの前記第1放射ビームを所定の角度で前記金属層に入射させるプリズムと、
前記第1放射ビームが前記金属層により反射され、前記プリズムを通過して生じる反射光を検出する第1ディテクタと、
前記金属層の前記計測表面に対し、所定の角度で前記第1放射ビームと同じ波長の第2放射ビームを出射する手段と、
前記金属層の前記計測表面に対して、前記第2放射ビームと異なる波長の第3放射ビームを出射する手段と、
前記計測表面によるラマン散乱光を検出する第2ディテクタと、
を備えるリソグラフィ装置。 - 表面プラズモン共鳴を用いてリソグラフィ装置内の光学表面の汚染を検出するように配置された計測装置を有し、
前記計測装置は、
前記リソグラフィ装置内であって露光用の放射ビームの経路以外の箇所に配置された計測表面をもち、且つ少なくとも2つの金属層及び導波管を含む複数の層と、
計測用の放射ビームを出射する放射源と、
前記計測用の放射ビームの偏光を制御する偏光コントローラと、
前記複数の層の前記計測表面の裏面上または当該裏面の近傍に設けられ、前記放射源からの放射ビームを所定の角度で前記複数の層に入射させるプリズムと、
前記計測用の放射ビームが前記複数の層に反射され、前記プリズムを通過して生じる反射光を検出するディテクタと、
を備えるリソグラフィ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/303,014 | 2005-12-16 | ||
US11/303,014 US7473916B2 (en) | 2005-12-16 | 2005-12-16 | Apparatus and method for detecting contamination within a lithographic apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007173786A JP2007173786A (ja) | 2007-07-05 |
JP4852395B2 true JP4852395B2 (ja) | 2012-01-11 |
Family
ID=38173038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006307883A Expired - Fee Related JP4852395B2 (ja) | 2005-12-16 | 2006-11-14 | リソグラフィ装置 |
Country Status (2)
Country | Link |
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US (2) | US7473916B2 (ja) |
JP (1) | JP4852395B2 (ja) |
Cited By (1)
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2005
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2006
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- 2006-11-16 US US11/600,329 patent/US7473917B2/en not_active Expired - Fee Related
Cited By (2)
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JP2016127230A (ja) * | 2015-01-08 | 2016-07-11 | 株式会社東芝 | 半導体装置の製造装置及び半導体装置の製造装置の管理方法 |
US9958794B2 (en) | 2015-01-08 | 2018-05-01 | Kabushiki Kaisha Toshiba | Manufacturing apparatus of semiconductor device and management method of manufacturing apparatus of semiconductor device |
Also Published As
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JP2007173786A (ja) | 2007-07-05 |
US20070139648A1 (en) | 2007-06-21 |
US20070139646A1 (en) | 2007-06-21 |
US7473917B2 (en) | 2009-01-06 |
US7473916B2 (en) | 2009-01-06 |
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