JP4829224B2 - 表面実装のためのフロント接点の形成 - Google Patents
表面実装のためのフロント接点の形成 Download PDFInfo
- Publication number
- JP4829224B2 JP4829224B2 JP2007515452A JP2007515452A JP4829224B2 JP 4829224 B2 JP4829224 B2 JP 4829224B2 JP 2007515452 A JP2007515452 A JP 2007515452A JP 2007515452 A JP2007515452 A JP 2007515452A JP 4829224 B2 JP4829224 B2 JP 4829224B2
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- JP
- Japan
- Prior art keywords
- solderable
- semiconductor device
- passivation
- power electrode
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000015572 biosynthetic process Effects 0.000 title description 3
- 239000004065 semiconductor Substances 0.000 claims description 50
- 238000002161 passivation Methods 0.000 claims description 49
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 210000001787 dendrite Anatomy 0.000 claims description 11
- 239000004593 Epoxy Substances 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 241000212941 Glehnia Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Die Bonding (AREA)
- Wire Bonding (AREA)
Description
本願は、「表面実装のためのフロント接点の製造」を発明の名称とし、2004年5月28日に出願された米国仮特許出願第60/575,656号に基づく優先権を主張するものであり、この米国仮特許出願の内容を参考例として援用する。
12 第1パワー電極
14 制御電極
16 ハンダ付け可能な本体
18 パッシベーション本体
20、22 開口部
24、26 ギャップ
28 第2パワー電極
30 単一パワー電極
32 導電性クリップ
34 ウェブ部分
36 リム
38 接続表面
40 導電性パッド
42 基板
44 導電性接着剤
46 導電性パッド
50 ウェーハ
Claims (20)
- 半導体デバイスであって、
第1主要表面および反対の第2主要表面を有する半導体ダイと、
一部の上に少なくとも1つのハンダ付け可能な本体が形成され、前記第1主要表面上に設けられた第1パワー電極と、
一部の上に少なくとも1つの第2のハンダ付け可能な本体が形成され、前記第1主要表面上に設けられた制御電極と、
前記第1パワー電極上に形成され、前記第1パワー電極上の少なくとも1つのハンダ付け可能な本体を露出するための開口部を含むパッシベーション本体とを備え、前記第1パワー電極上の少なくとも1つのハンダ付け可能な本体を囲むギャップにより、前記少なくとも1つのハンダ付け可能な本体が、前記パッシベーション本体から離間するように、前記開口部の幅は、前記少なくとも1つのハンダ付け可能な本体のそれよりも大となっており、
前記少なくとも1つのハンダ付け可能な本体はデンドライトを形成しうる金属から構成され、前記ギャップは前記デンドライトの成長による短絡を防止するように構成されている、半導体デバイス。 - 前記パッシベーション本体は、前記制御電極上の少なくとも1つの第2のハンダ付け可能な本体を露出するための別の開口部を有する、請求項1記載の半導体デバイス。
- 前記第1パワー電極上に形成された、前記少なくとも1つのハンダ付け可能な本体を含む複数のハンダ付け可能な本体と、前記パッシベーション本体内に設けられた前記開口部を含む複数の開口部とを更に備え、
前記複数の開口部の各々は、前記第1パワー電極上のそれぞれのハンダ付け可能な本体を露出させると共に、前記第1パワー電極上のそれぞれのハンダ付け可能な本体を囲むギャップにより、前記それぞれのハンダ付け可能な本体が、前記パッシベーション本体から離間するように、前記各開口部は、前記それぞれのハンダ付け可能な本体よりも広くなっている、請求項1記載の半導体デバイス。 - 前記少なくとも1つのハンダ付け可能な本体が、前記パッシベーション本体を越えて延びないよう、前記パッシベーション本体は、前記第1パワー電極上の少なくとも1つのハンダ付け可能な本体よりも厚くなっている、請求項1記載の半導体デバイス。
- 前記第1パワー電極上の少なくとも1つのハンダ付け可能な本体は、銀を含む、請求項1記載の半導体デバイス。
- 前記第1パワー電極上の少なくとも1つのハンダ付け可能な本体は、ハンダ付け可能なトリメタルから構成されており、前記トリメタルの頂部部分は、銀から構成されている、請求項1記載の半導体デバイス。
- 前記第2主要表面上に設けられた第2パワー電極と、導電性クリップとを更に備え、前記第2パワー電極は、導電性接着剤により、前記導電性クリップに電気的に接続されている、請求項1記載の半導体デバイス。
- 前記導電性クリップは、その外側表面上に銀を含む、請求項7記載の半導体デバイス。
- 前記導電性クリップは、カップ形である、請求項7記載の半導体デバイス。
- 前記第1主要表面に設けられた第2パワー電極と、この第2パワー電極上に設けられた少なくとも1つの別のハンダ付け可能な本体とを更に備え、
前記パッシベーション本体は、前記第2電極上の前記少なくとも1つの別のハンダ付け可能な本体を露出するための開口部を備え、前記第2パワー電極上の前記少なくとも1つの別のハンダ付け可能な本体を囲むギャップにより、前記第2パワー電極上の前記少なくとも1つの別のハンダ付け可能な本体を、前記パッシベーション本体から離間させるよう、前記開口部は、前記少なくとも1つの別のハンダ付け可能な本体よりも広くなっている、請求項1記載の半導体デバイス。 - 前記半導体ダイは、パワーMOSFETであり、前記第1パワー電極は、ソース電極であり、前記制御電極は、ゲート電極である、請求項1記載の半導体デバイス。
- 前記パッシベーション本体は、エポキシをベースとするパッシベーション本体を有する、請求項1記載の半導体デバイス。
- 半導体デバイスであって、
一側面は、導電性接着剤により、導電性パッドに直接接続されるようになっている半導体ダイを備え、この一側面は、少なくとも1つのパワー電極を含み、更に前記少なくとも1つのパワー電極に形成されたパッシベーション本体と、前記少なくとも1つのパワー電極を露出させるべく、前記パッシベーション本体内に設けられた開口部と、前記少なくとも1つのパワー電極上に形成されたハンダ付け可能な本体とを備え、前記パッシベーション本体と前記ハンダ付け可能な本体との間に、ギャップが形成されるよう、前記ハンダ付け可能な本体の幅は、前記開口部の幅よりも小となっており、
前記ハンダ付け可能な本体はデンドライトを形成しうる金属から構成され、前記ギャップは前記デンドライトの成長による短絡を防止するように構成されている、半導体デバイス。 - 前記側面は、制御電極と、この制御電極上に形成された第2のハンダ付け可能な本体とを有し、前記パッシベーション本体は、前記制御電極上の前記第2のハンダ付け可能な本体を露出させる開口部を有する、制御電極13記載の半導体デバイス。
- 前記1つの側面は、別のパワー電極と、この別のパワー電極上に設けられた別のハンダ付け可能な本体とを更に備え、前記パッシベーション本体は、前記パワー電極上に設けられた前記別のハンダ付け可能な本体を露出させる開口部を有し、前記別のパワー電極上のパッシベーション本体と前記別のハンダ付け可能な本体との間にギャップが生じるよう、前記ハンダ付け可能な本体の幅は、前記開口部よりも狭くなっている、請求項13記載の半導体デバイス。
- 前記半導体ダイは、ダイオードである、請求項13記載の半導体デバイス。
- 前記半導体ダイは、パワーMOSFETである、請求項13記載の半導体デバイス。
- 前記少なくとも1つのパワー電極上に設けられ、前記ハンダ付け可能な本体を含む、互いに離間する複数のハンダ付け可能な本体を更に備え、前記パッシベーション本体は、前記開口部を含む複数の開口部を有し、各ハンダ付け可能な本体と前記パッシベーション本体との間に、ギャップが生じるよう、前記複数の開口部の各々の幅は、それぞれのハンダ付け可能な本体のそれよりも大きくて、前記ハンダ付け可能な本体を露出させるようになっている、請求項13記載の半導体デバイス。
- 前記ハンダ付け可能な本体は、銀を含む、請求項13記載の半導体デバイス。
- 前記パッシベーション本体は、エポキシから構成されている、請求項13記載の半導体デバイス。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US57565604P | 2004-05-28 | 2004-05-28 | |
US60/575,656 | 2004-05-28 | ||
US11/138,141 | 2005-05-26 | ||
US11/138,141 US20050269677A1 (en) | 2004-05-28 | 2005-05-26 | Preparation of front contact for surface mounting |
PCT/US2005/018932 WO2005119766A2 (en) | 2004-05-28 | 2005-05-27 | Preparation of front contact for surface mounting |
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JP2008501246A JP2008501246A (ja) | 2008-01-17 |
JP4829224B2 true JP4829224B2 (ja) | 2011-12-07 |
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JP2007515452A Active JP4829224B2 (ja) | 2004-05-28 | 2005-05-27 | 表面実装のためのフロント接点の形成 |
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Country | Link |
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US (1) | US20050269677A1 (ja) |
EP (1) | EP1756865A4 (ja) |
JP (1) | JP4829224B2 (ja) |
KR (1) | KR100840405B1 (ja) |
CN (1) | CN101019226B (ja) |
TW (1) | TWI258867B (ja) |
WO (1) | WO2005119766A2 (ja) |
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Also Published As
Publication number | Publication date |
---|---|
TW200603421A (en) | 2006-01-16 |
WO2005119766A2 (en) | 2005-12-15 |
TWI258867B (en) | 2006-07-21 |
WO2005119766A3 (en) | 2007-04-19 |
JP2008501246A (ja) | 2008-01-17 |
US20050269677A1 (en) | 2005-12-08 |
CN101019226B (zh) | 2010-04-07 |
KR20070026533A (ko) | 2007-03-08 |
EP1756865A4 (en) | 2012-03-21 |
EP1756865A2 (en) | 2007-02-28 |
CN101019226A (zh) | 2007-08-15 |
KR100840405B1 (ko) | 2008-06-23 |
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