JP4823690B2 - 成膜方法および半導体装置の製造方法 - Google Patents
成膜方法および半導体装置の製造方法 Download PDFInfo
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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Description
[実施例1]
図1A〜図1Cは、本発明の実施例1である成膜方法を、手順を追って示したものである。本実施例では、Cu拡散防止膜として、TiN膜を形成する手順について説明する。また、本実施例では、前記TiN膜を形成する際の下地膜が絶縁膜の場合であり、当該絶縁膜にダメージを与えずに、かつ前記したような高品質のCu拡散防止膜を形成する方法を以下に説明する。
[実施例2]
次に、実施例2として、Cu拡散防止膜を形成する際の下地膜がCu膜の場合において、当該Cu膜にダメージを与えずに、かつ前記したような高品質のCu拡散防止膜を形成する方法を以下に説明する。
図2A〜図2Cは、本発明の実施例1である成膜方法を、手順を追って示したものである。本実施例では、Cu拡散防止膜として、TiN/Ti(C)N膜を形成する手順について説明する。
[実施例3]
そこで、実施例3として、Cu拡散防止膜を形成する際の下地膜に絶縁膜とCu膜の双方が存在し、当該絶縁膜および当該Cu膜の双方にダメージを与えずに、かつ前記したような高品質のCu拡散防止膜を形成する方法を以下に説明する。
図3A〜図3Cは、本発明の実施例3である成膜方法を、手順を追って示したものである。本実施例では、Cu拡散防止膜として、TiN/Ti(C)N膜を形成する手順について説明する。
[実施例4]
図4は、前記した実施例1〜実施例3の成膜方法を実施可能な成膜装置10を示す。
[実施例5]
図5は、前記成膜装置10を用いて行う本発明によるCu拡散防止膜の成膜方法によるプロセスフローを示す図であり、図1に示した実施例1をより具体的に示したものである。本実施例では、被処理基板上の下地膜である酸化膜上にCu拡散防止膜を形成する例としてTiN膜を形成する。当該プロセスフローはステップ101(図中S101と示す。以下同様)〜ステップ116よりなる。
次に、同様にして、図2に示した、下地膜であるCu膜にダメージを与えないCu拡散防止膜の成膜方法によるプロセスフローを図6に示す。ただし図中、先に説明した部分には同一の参照符号を用い、一部説明を省略する。本実施例は、さきに図2に示した実施例2をより具体的に示したものであり、当該プロセスフローは、ステップ201〜216よりなる。
例えば、第1のCu拡散防止膜形成時に用いる第1の原料ガスおよび第2の原料ガス、また第2のCu拡散防止膜形成時に用いる第1の原料ガスおよび第2の原料ガスの例を示す。表中に示したいずれかのガスを用いることで、本実施例に示した場合と同様にしてTiN/Ti(C)N膜を形成することが可能であり、本実施例の場合と同様の効果を奏する。
[実施例7]
図7は、下地膜である絶縁膜とCu膜の双方にダメージを与えないCu拡散防止膜の成膜方法によるプロセスフローである。ただし図中、先に説明した部分には同一の参照符号を用い、一部説明を省略する。本実施例は、さきに図3に示した実施例3をより具体的に示したものであり、当該プロセスフローは、ステップ301〜316よりなる。
[実施例8]
次に、実施例5に前記した成膜方法を半導体装置の製造工程に適用した例を以下図8A〜図8Fにおいて、手順を追って説明する。
[実施例9]
次に、実施例6に前記した成膜方法を半導体装置の製造工程に適用した例の説明をする。本実施例は前記した実施例8における、図8Dおよび図8Eの第1のCu拡散防止膜39および第2の拡散防止膜40の形成工程を変更すればよい。
[実施例10]
次に、実施例7に前記した成膜方法を半導体装置の製造工程に適用した例の説明をする。本実施例は前記した実施例8における、図8Dおよび図8Eの第1のCu拡散防止膜39および第2の拡散防止膜40の形成工程を変更すればよい。
[実施例11]
また、本実施例に記載した第1のCu拡散防止膜および第2のCu拡散防止膜は、次に図10に示す成膜装置50を用いて形成することも可能である。
[実施例12]
図11は、前記成膜装置50を用いて行う本発明によるCu拡散防止膜の成膜方法によるプロセスフローを示す図である。本実施例では、被処理基板上の下地膜である酸化膜上にCu拡散防止膜を形成する例としてTa/Ta(C)N膜を形成する。当該プロセスフローはステップ401〜ステップ417よりなる。
[実施例13]
また、実施例中に記載した第1のCu拡散防止膜および第2のCu拡散防止膜からなるCu拡散防止膜は、次に図21に示す、成膜装置70を用いて、前記成膜装置10または前記成膜装置50を用いた場合と同様に形成することが可能である。ただし図中、先に説明した部分には同一の参照符号を付し、説明を省略する。
Claims (25)
- 処理容器内の被処理基板に成膜する成膜方法であって、
ハロゲン元素を含まない有機金属化合物からなる第1の原料ガスを前記処理容器内に供給した後、前記第1の原料ガスを前記処理容器内から除去する第1の工程と、
水素または水素化合物を含む第2の原料ガスを前記処理容器内に供給した後、前記第2の原料ガスを前記処理容器内から除去する第2の工程と、を繰り返してなる第1の膜成長工程と、
金属ハロゲン化物からなる第3の原料ガスを前記処理容器内に供給した後、前記第3の原料ガスを前記被処理基板から除去する第3の工程と、
水素または水素化合物を含む第4の原料ガスを前記処理容器内に供給した後、前記第4の原料ガスを前記処理容器内から除去する第4の工程と、を繰り返してなる第2の膜成長工程からなる成膜方法。 - 前記処理容器内に供給される前記第2の原料ガスおよび前記第4の原料ガスは、プラズマ励起されていることを特徴とする請求項1記載の成膜方法。
- 前記有機金属化合物は金属アミド化合物または金属カルボニル化合物であることを特徴とする請求項1記載の成膜方法。
- 前記第1の膜成長工程は前記被処理基板上に形成された金属膜を含む下地膜の上に膜成長が行われることを特徴とする請求項1記載の成膜方法。
- 前記金属膜は、Cu、W、Alのいずれかよりなることを特徴とする請求項4記載の成膜方法。
- 前記第1の膜成長工程と前記第2の膜成長工程において形成される膜は、Cuの拡散防止膜であることを特徴とする請求項1記載の成膜方法。
- 前記下地膜は絶縁膜を含み、前記第1の膜成長工程の前に、前記絶縁膜をエッチングする工程をさらに含むことを特徴とする請求項4記載の成膜方法。
- 前記エッチングは、前記絶縁膜にホール部を形成するビアエッチングであり、
前記第1の膜成長工程は、前記被処理基板表面および前記ホール内に前記第1の薄膜を成長することを特徴とする請求項7記載の成膜方法。 - 前記エッチングは、前記絶縁膜に溝部を形成するトレンチエッチングであり、
前記第1の膜成長工程は、前記被処理基板表面および前記トレンチ内に第1の薄膜を成長することを特徴とする請求項7記載の成膜方法。 - 前記第2の膜成長工程の後に、Cu膜を形成する工程をさらに含むことを特徴とする請求項1記載の成膜方法。
- 請求項1〜10のいずれか1項記載の成膜方法を含む半導体装置の製造方法。
- 処理容器内の被処理基板に成膜する成膜方法であって、
ハロゲン元素を含まない有機金属化合物からなる第1の原料ガスを前記処理容器内に供給した後、前記第1の原料ガスを前記処理容器内から除去する第1の工程と、
水素または水素化合物を含む第2の原料ガスを前記処理容器内に供給した後、前記第2の原料ガスを前記処理容器内から除去する第2の工程とを繰り返してなる第1の膜成長工程と、
金属ハロゲン化物からなる第3の原料ガスを前記処理容器内に供給した後、前記第3の原料ガスを前記被処理基板から除去する第3の工程と、
水素または水素化合物を含み、プラズマ励起された第4の原料ガスを前記処理容器内に供給した後、前記第4の原料ガスを前記処理容器内から除去する第4の工程とを繰り返してなる第2の膜成長工程からなる成膜方法。 - 前記有機金属化合物は金属アミド化合物または金属カルボニル化合物であることを特徴とする請求項12記載の成膜方法。
- 前記第1の膜成長工程は前記被処理基板上に形成された絶縁膜および金属膜を含む下地膜の上に膜成長が行われることを特徴とする請求項12記載の成膜方法。
- 前記絶縁膜は無機SOD膜であることを特徴とする請求項14記載の成膜方法。
- 前記絶縁膜は、有機ポリマー膜であることを特徴とする請求項14記載の成膜方法。
- 前記絶縁膜は、当該絶縁膜中に空孔を形成したポーラス膜であることを特徴とする請求項14記載の成膜方法。
- 前記金属膜は、Cu、W、Alのいずれかよりなることを特徴とする請求項14記載の成膜方法。
- 前記第1の膜成長工程と前記第2の膜成長工程において形成される膜は、Cuの拡散防止膜であることを特徴とする請求項12記載の成膜方法。
- 前記第1の膜成長工程の前に、前記絶縁膜をエッチングする工程をさらに含むことを特徴とする請求項14記載の成膜方法。
- 前記エッチングは、前記絶縁膜にホール部を形成するビアエッチングであり、
前記第1の膜成長工程は、前記被処理基板表面および前記ホール内に第1の薄膜を成長することを特徴とする請求項20記載の成膜方法。 - 前記エッチングは、前記絶縁膜に溝部を形成するトレンチエッチングであり、
前記第1の膜成長工程は、前記被処理基板表面および前記トレンチ内に第1の薄膜を成長することを特徴とする請求項20記載の成膜方法。 - 前記第2の成膜工程の後に、Cu膜を形成する工程をさらに含むことを特徴とする請求項12記載の成膜方法。
- 前記第1の原料ガスはTa(NC(CH 3 ) 2 C 2 H 5 )(N(CH 3 ) 2 ) 3 であり、
前記第2の原料ガスは水素であり、
前記第3の原料ガスはTaCl 5 であり、
前記第4の原料ガスは水素であり、
前記第1の工程から前記第4の工程では、前記処理基板の温度は同じに保たれることを特徴とする請求項12記載の成膜方法。 - 請求項12〜24のいずれか1項記載の成膜方法を含む半導体装置の製造方法。
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- 2004-04-27 WO PCT/JP2004/006060 patent/WO2004112114A1/ja active Application Filing
- 2004-04-27 KR KR1020057024111A patent/KR100724181B1/ko not_active IP Right Cessation
- 2004-06-16 TW TW093117387A patent/TW200506091A/zh not_active IP Right Cessation
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Also Published As
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JPWO2004112114A1 (ja) | 2006-07-27 |
KR20060016814A (ko) | 2006-02-22 |
TWI359876B (ja) | 2012-03-11 |
WO2004112114A1 (ja) | 2004-12-23 |
US20060068104A1 (en) | 2006-03-30 |
KR100724181B1 (ko) | 2007-05-31 |
TW200506091A (en) | 2005-02-16 |
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