JP6117588B2 - Cu配線の形成方法 - Google Patents
Cu配線の形成方法 Download PDFInfo
- Publication number
- JP6117588B2 JP6117588B2 JP2013067196A JP2013067196A JP6117588B2 JP 6117588 B2 JP6117588 B2 JP 6117588B2 JP 2013067196 A JP2013067196 A JP 2013067196A JP 2013067196 A JP2013067196 A JP 2013067196A JP 6117588 B2 JP6117588 B2 JP 6117588B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- wiring
- treatment
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 58
- 238000012545 processing Methods 0.000 claims description 67
- 239000007789 gas Substances 0.000 claims description 62
- 238000004381 surface treatment Methods 0.000 claims description 45
- 230000004888 barrier function Effects 0.000 claims description 44
- 238000011282 treatment Methods 0.000 claims description 33
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 24
- 239000000126 substance Substances 0.000 claims description 23
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 229910008051 Si-OH Inorganic materials 0.000 claims description 16
- 229910006358 Si—OH Inorganic materials 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 12
- 230000005660 hydrophilic surface Effects 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 10
- 238000003860 storage Methods 0.000 claims description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 description 338
- 239000010949 copper Substances 0.000 description 112
- 239000011572 manganese Substances 0.000 description 94
- 235000012431 wafers Nutrition 0.000 description 67
- 238000012546 transfer Methods 0.000 description 52
- 239000011229 interlayer Substances 0.000 description 39
- 230000008569 process Effects 0.000 description 32
- 230000015572 biosynthetic process Effects 0.000 description 24
- 230000007246 mechanism Effects 0.000 description 19
- 238000005240 physical vapour deposition Methods 0.000 description 18
- 238000005229 chemical vapour deposition Methods 0.000 description 17
- 239000000243 solution Substances 0.000 description 15
- 238000000137 annealing Methods 0.000 description 14
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 12
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 11
- 229910002091 carbon monoxide Inorganic materials 0.000 description 11
- 150000002697 manganese compounds Chemical class 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 229910052748 manganese Inorganic materials 0.000 description 9
- 239000012528 membrane Substances 0.000 description 9
- 238000009832 plasma treatment Methods 0.000 description 9
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 8
- 238000007747 plating Methods 0.000 description 7
- ASTZLJPZXLHCSM-UHFFFAOYSA-N dioxido(oxo)silane;manganese(2+) Chemical compound [Mn+2].[O-][Si]([O-])=O ASTZLJPZXLHCSM-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000002294 plasma sputter deposition Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 230000002209 hydrophobic effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 4
- NQZFAUXPNWSLBI-UHFFFAOYSA-N carbon monoxide;ruthenium Chemical group [Ru].[Ru].[Ru].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] NQZFAUXPNWSLBI-UHFFFAOYSA-N 0.000 description 4
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 4
- 230000008602 contraction Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- -1 diketone manganese compound Chemical class 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 229910017566 Cu-Mn Inorganic materials 0.000 description 3
- 229910017871 Cu—Mn Inorganic materials 0.000 description 3
- 229910000914 Mn alloy Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- QFEOTYVTTQCYAZ-UHFFFAOYSA-N dimanganese decacarbonyl Chemical compound [Mn].[Mn].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] QFEOTYVTTQCYAZ-UHFFFAOYSA-N 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 125000001165 hydrophobic group Chemical group 0.000 description 3
- 230000005661 hydrophobic surface Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 229910020175 SiOH Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- HDWDVUXQIOWBEP-UHFFFAOYSA-N C(C)C1(C=CC=C1)[Ru] Chemical compound C(C)C1(C=CC=C1)[Ru] HDWDVUXQIOWBEP-UHFFFAOYSA-N 0.000 description 1
- LGJJVJDDNWYROS-UHFFFAOYSA-N C1(C=CC=C1)[Ru]C=C(C=C(C)C)C Chemical compound C1(C=CC=C1)[Ru]C=C(C=C(C)C)C LGJJVJDDNWYROS-UHFFFAOYSA-N 0.000 description 1
- XOSBQSGUNCVAIL-UHFFFAOYSA-N CC(=C[Ru]C1(C=CC=C1)CC)C=C(C)C Chemical compound CC(=C[Ru]C1(C=CC=C1)CC)C=C(C)C XOSBQSGUNCVAIL-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- DEIHRWXJCZMTHF-UHFFFAOYSA-N [Mn].[CH]1C=CC=C1 Chemical class [Mn].[CH]1C=CC=C1 DEIHRWXJCZMTHF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 238000005189 flocculation Methods 0.000 description 1
- 230000016615 flocculation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- ORJFXWYTRPGGRK-UHFFFAOYSA-N hydroxy-tris(2-methylbutan-2-yloxy)silane Chemical compound CCC(C)(C)O[Si](O)(OC(C)(C)CC)OC(C)(C)CC ORJFXWYTRPGGRK-UHFFFAOYSA-N 0.000 description 1
- HLDBBQREZCVBMA-UHFFFAOYSA-N hydroxy-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C HLDBBQREZCVBMA-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- QKOHYQVZNLEAJH-UHFFFAOYSA-N oxomethylidenemanganese Chemical class O=C=[Mn] QKOHYQVZNLEAJH-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 150000003304 ruthenium compounds Chemical class 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/358—Inductive energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0338—Layered conductor, e.g. layered metal substrate, layered finish layer, layered thin film adhesion layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
まず、Cu配線の形成方法の一実施形態について図1のフローチャートおよび図2の工程断面図を参照して説明する。
Mn膜204は上述したようにCVD(Chemical Vapor Deposition)により成膜する。CVDの一種であるALD(Atomic Layer Deposition)で成膜してもよい。CVDによりMn膜を成膜する際の熱により、成膜の際の熱では不十分な場合には、その熱にその後に与えられる熱(例えばアニール処理等)を加えることにより、Mnが下地のSiと反応してマンガンシリケート(MnSiOx(ただし、xは3または4))からなる自己整合バリア膜205を形成することができる。すなわち、図5(a)に示すように、Mn膜204は、下地である層間絶縁膜202に含まれるSiと反応するので、図5(b)に示すように、バリア膜205を下地である層間絶縁膜202側に形成することができる。このため、ホールやトレンチのような凹部内でのバリア膜の体積を小さくすることができ、凹部内でのバリア膜の体積を0に近付けることができる。したがって、配線中のCuの体積を増加させて配線の低抵抗化を実現することができる。
RuはCuに対する濡れ性が高いため、Cuの下地にRuライナー膜を形成することにより、次のiPVDによるCu膜形成の際に、良好なCuの移動性を確保することができ、トレンチやホールの間口を塞ぐオーバーハングを生じ難くすることができる。このため、微細なトレンチまたはホールにもボイドを発生させずに確実にCuを埋め込むことができる。
Cu膜207は、PVDにより成膜されるが、上述したように、iPVD、例えばプラズマスパッタを用いることが好ましい。
この実験では、層間絶縁膜としてLow−k膜(SiCOH系;k=2.4))を用い、Low−k膜の表面に対して表面処理を行わなかったものと、N2プラズマ処理を行った後、過酸化水素系薬液処理を施す表面処理を行ったものについて265℃でデガス処理を行い、その後、デカカルボニル2マンガン(Mn2(CO)10)を用いたCVDにより300℃でMn膜を成膜した。
この実験では、図7に示すように、層間絶縁膜としてLow−k膜(SiCOH系;k=2.4))を用い、Low−k膜の表面に対して表面処理を行わなかったものと、TBOSL薬液に浸漬する表面処理を行ったものについて、Cu−1at%Mn合金膜をPVDにより200nmの厚さで成膜し、その上にPVDによりTa膜を10nmの厚さで成膜したサンプルを作製し、これらサンプルについて、200℃で1hrのアニールを施し、Low−k膜とCu−Mn合金膜との間にMnOを形成した後、自己整合バリアを形成するための400℃で30minのアニールを施した。
次に、本発明の実施形態に係るCu配線の形成方法の実施に好適な成膜システムについて説明する。図9は本発明の実施形態に係るCu配線の形成方法の実施に好適なシステムの概略構成を示すブロック図、図10は図9の成膜処理部を構成するマルチチャンバタイプの成膜システムの一例を示す平面図、図11は図9の制御部を示すブロック図である。
次に、Cu膜を形成するCu膜成膜装置22a,22bの好適な例について説明する。図12は、Cu膜成膜装置の一例を示す断面図である。
次に、Mn膜を形成するためのMn膜成膜装置12a(12b)について説明する。Mn膜は熱CVDにより好適に形成することができる。図13は、Mn膜成膜装置の一例を示す断面図であり、熱CVDによりMn膜を形成するものである。
Ruライナー膜成膜装置14a,14bは、成膜ガスを例えばルテニウムカルボニル(Ru3(CO)12)に変更するだけで、図13のMn成膜装置をそのまま用いることができ、これにより、ルテニウムカルボニルを熱分解させて熱CVDによるRuライナー膜の成膜を行うことができる。また、同じ装置を用いて上述したような他のCVD用原料によりRuライナー膜を成膜することもできる。
以上、本発明の実施形態について説明したが、本発明は上記実施形態に限定されることなく種々変形可能である。例えば、成膜処理部としては、図10のようなタイプに限らず、一つの搬送装置に全ての成膜装置が接続されているタイプであってもよい。また、図10のようなマルチチャンバタイプのシステムではなく、Mn膜、Ruライナー膜、Cu膜のうち、一部のみを同一の成膜システムで形成し、残部を別個に設けた装置により大気暴露を経て成膜するようにしてもよいし、全てを別個の装置で大気暴露を経て成膜するようにしてもよい。
14a,14b;Ruライナー膜成膜装置
22a,22b;Cu膜成膜装置
100;成膜システム
101;表面処理部
102;成膜処理部
103;CMP処理部
201;下部構造
202;層間絶縁膜(Si含有膜)
203;トレンチ
204;Mn膜
205;自己整合バリア膜
206;Ruライナー膜
207;Cu膜
208;Cu配線
W;半導体ウエハ(被処理基板)
Claims (8)
- 表面に所定パターンの凹部が形成されたSi含有膜を有する基板に対し、前記凹部を埋めるCu配線を形成するCu配線の形成方法であって、
前記Si含有膜の表面に、その表面が親水性の表面となるような表面処理を施す工程と、
少なくとも前記凹部の表面に、下地との反応で自己整合バリア膜となるMn膜をCVDにより形成する工程と、
Cu膜をPVDにより形成して前記凹部内に前記Cu膜を埋め込む工程と、
CMPにより全面を研磨して前記凹部内にCu配線を形成する工程と
を有し、
前記表面処理を施す工程は、表面にNH基を形成する第1の処理と、その後に行われるOH基またはH基を形成する第2の処理とを含むことを特徴とするCu配線の形成方法。 - 前記第1の処理は、前記基板をN 2 プラズマで処理するものであることを特徴とする請求項1に記載のCu配線の形成方法。
- 前記第2の処理は、過酸化水素を含む薬液で処理するものであることを特徴とする請求項1または請求項2に記載のCu配線の形成方法。
- 前記第2の処理は、構造中にO−Si−OHを有する化合物で処理するものであることを特徴とする請求項1または請求項2に記載のCu配線の形成方法。
- 前記Mn膜を成膜した後、前記Cu膜を形成する前に、Ru膜を形成する工程をさらに有することを特徴とする請求項1から請求項4のいずれか1項に記載のCu配線の形成方法。
- 前記Ru膜は、CVDにより形成されることを特徴とする請求項5に記載のCu配線の形成方法。
- 前記Cu膜の形成は、基板が収容された処理容器内にプラズマ生成ガスによりプラズマを生成し、Cuターゲットから粒子を飛翔させて、粒子を前記プラズマ中でイオン化させ、前記基板にバイアス電力を印加してイオンを基板上に引きこむ装置により行われることを特徴とする請求項1から請求項6のいずれか1項に記載のCu配線の形成方法。
- コンピュータ上で動作し、Cu配線形成システムを制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、請求項1から請求項7のいずれかのCu配線の形成方法が行われるように、コンピュータに前記Cu配線形成システムを制御させることを特徴とする記憶媒体。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013067196A JP6117588B2 (ja) | 2012-12-12 | 2013-03-27 | Cu配線の形成方法 |
US14/098,465 US9313895B2 (en) | 2012-12-12 | 2013-12-05 | Method for forming copper wiring |
TW102145488A TW201438074A (zh) | 2012-12-12 | 2013-12-11 | Cu配線之形成方法 |
KR1020130154357A KR101739613B1 (ko) | 2012-12-12 | 2013-12-12 | Cu 배선의 형성 방법 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012271020 | 2012-12-12 | ||
JP2012271020 | 2012-12-12 | ||
JP2013067196A JP6117588B2 (ja) | 2012-12-12 | 2013-03-27 | Cu配線の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014135465A JP2014135465A (ja) | 2014-07-24 |
JP6117588B2 true JP6117588B2 (ja) | 2017-04-19 |
Family
ID=50881234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013067196A Expired - Fee Related JP6117588B2 (ja) | 2012-12-12 | 2013-03-27 | Cu配線の形成方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9313895B2 (ja) |
JP (1) | JP6117588B2 (ja) |
KR (1) | KR101739613B1 (ja) |
TW (1) | TW201438074A (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9142456B2 (en) * | 2013-07-30 | 2015-09-22 | Lam Research Corporation | Method for capping copper interconnect lines |
US9966339B2 (en) | 2014-03-14 | 2018-05-08 | Taiwan Semiconductor Manufacturing Company | Barrier structure for copper interconnect |
US9984975B2 (en) * | 2014-03-14 | 2018-05-29 | Taiwan Semiconductor Manufacturing Company | Barrier structure for copper interconnect |
KR102264160B1 (ko) | 2014-12-03 | 2021-06-11 | 삼성전자주식회사 | 비아 구조체 및 배선 구조체를 갖는 반도체 소자 제조 방법 |
JP6584326B2 (ja) * | 2015-03-16 | 2019-10-02 | 東京エレクトロン株式会社 | Cu配線の製造方法 |
US10157784B2 (en) | 2016-02-12 | 2018-12-18 | Tokyo Electron Limited | Integration of a self-forming barrier layer and a ruthenium metal liner in copper metallization |
KR20170110332A (ko) | 2016-03-23 | 2017-10-11 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
CN108475638B (zh) * | 2016-05-16 | 2022-11-18 | 株式会社爱发科 | Cu膜的形成方法 |
JP6910118B2 (ja) * | 2016-08-05 | 2021-07-28 | 東京エレクトロン株式会社 | 成膜方法および成膜システム、ならびに表面処理方法 |
US11133216B2 (en) * | 2018-06-01 | 2021-09-28 | International Business Machines Corporation | Interconnect structure |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6417098B1 (en) * | 1999-12-09 | 2002-07-09 | Intel Corporation | Enhanced surface modification of low K carbon-doped oxide |
JP3707394B2 (ja) * | 2001-04-06 | 2005-10-19 | ソニー株式会社 | 無電解メッキ方法 |
WO2003015151A1 (en) * | 2001-08-02 | 2003-02-20 | Tokyo Electron Limited | Base material treating method and electron device-use material |
US6916398B2 (en) * | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
JP2006016684A (ja) * | 2004-07-05 | 2006-01-19 | Ebara Corp | 配線形成方法及び配線形成装置 |
JP2006148075A (ja) * | 2004-10-19 | 2006-06-08 | Tokyo Electron Ltd | 成膜方法及びプラズマ成膜装置 |
KR100904779B1 (ko) | 2004-10-19 | 2009-06-25 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 스퍼터링에 의한 성막방법 및 성막장치 |
US7709145B2 (en) * | 2004-11-12 | 2010-05-04 | Gm Global Technology Operations, Inc. | Hydrophilic surface modification of bipolar plate |
US20100200991A1 (en) * | 2007-03-15 | 2010-08-12 | Rohan Akolkar | Dopant Enhanced Interconnect |
JP5196467B2 (ja) * | 2007-05-30 | 2013-05-15 | 東京エレクトロン株式会社 | 半導体装置の製造方法、半導体製造装置及び記憶媒体 |
CN102132398B (zh) | 2008-03-21 | 2015-01-28 | 哈佛学院院长等 | 用于互连的自对准阻挡层 |
JP5417754B2 (ja) * | 2008-07-11 | 2014-02-19 | 東京エレクトロン株式会社 | 成膜方法及び処理システム |
JP5522979B2 (ja) * | 2009-06-16 | 2014-06-18 | 国立大学法人東北大学 | 成膜方法及び処理システム |
JP5307072B2 (ja) * | 2009-06-17 | 2013-10-02 | 東京エレクトロン株式会社 | 金属酸化物膜の形成方法及び成膜装置 |
US8531033B2 (en) * | 2009-09-07 | 2013-09-10 | Advanced Interconnect Materials, Llc | Contact plug structure, semiconductor device, and method for forming contact plug |
JP5585909B2 (ja) * | 2010-02-16 | 2014-09-10 | 合同会社先端配線材料研究所 | コンタクトプラグ、配線、半導体装置およびコンタクトプラグ形成方法 |
JP2011216862A (ja) * | 2010-03-16 | 2011-10-27 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
CN103313993A (zh) | 2010-11-02 | 2013-09-18 | 宇部兴产株式会社 | (酰胺氨基烷烃)金属化合物及使用所述金属化合物制备含金属的薄膜的方法 |
-
2013
- 2013-03-27 JP JP2013067196A patent/JP6117588B2/ja not_active Expired - Fee Related
- 2013-12-05 US US14/098,465 patent/US9313895B2/en not_active Expired - Fee Related
- 2013-12-11 TW TW102145488A patent/TW201438074A/zh unknown
- 2013-12-12 KR KR1020130154357A patent/KR101739613B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR20140076514A (ko) | 2014-06-20 |
JP2014135465A (ja) | 2014-07-24 |
US9313895B2 (en) | 2016-04-12 |
KR101739613B1 (ko) | 2017-05-24 |
US20140161992A1 (en) | 2014-06-12 |
TW201438074A (zh) | 2014-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6117588B2 (ja) | Cu配線の形成方法 | |
JP6268008B2 (ja) | Cu配線の製造方法 | |
JP6257217B2 (ja) | Cu配線構造の形成方法 | |
WO2012133400A1 (ja) | Cu配線の形成方法 | |
JP6139298B2 (ja) | Cu配線の形成方法 | |
JP5969306B2 (ja) | Cu配線の形成方法 | |
JP5767570B2 (ja) | Cu配線の形成方法およびCu膜の成膜方法、ならびに成膜システム | |
JP6385856B2 (ja) | Cu配線の形成方法および半導体装置の製造方法 | |
JP5788785B2 (ja) | Cu配線の形成方法および成膜システム | |
KR102103072B1 (ko) | 구리 배선의 제조 방법 | |
JP2017050304A (ja) | 半導体装置の製造方法 | |
KR20180117575A (ko) | Cu 배선의 제조 방법 및 Cu 배선 제조 시스템 | |
JP6013901B2 (ja) | Cu配線の形成方法 | |
WO2014010333A1 (ja) | Cu配線の形成方法およびコンピュータ読み取り可能な記憶媒体 | |
KR20150069537A (ko) | 반도체 장치의 제조 방법 | |
JP2016167545A (ja) | ビアホール底のクリーニング方法および半導体装置の製造方法 | |
JP2012204522A (ja) | 成膜方法およびCu配線の形成方法 | |
KR101357531B1 (ko) | Cu 배선의 형성 방법 및 Cu막의 성막 방법, 성막 시스템, 및 기억 매체 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20151105 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160913 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160915 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161026 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170104 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170314 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170323 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6117588 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |