JP4811927B2 - Led発光装置およびその製造方法 - Google Patents
Led発光装置およびその製造方法 Download PDFInfo
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- JP4811927B2 JP4811927B2 JP2006080365A JP2006080365A JP4811927B2 JP 4811927 B2 JP4811927 B2 JP 4811927B2 JP 2006080365 A JP2006080365 A JP 2006080365A JP 2006080365 A JP2006080365 A JP 2006080365A JP 4811927 B2 JP4811927 B2 JP 4811927B2
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- bonding material
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- emitting device
- led chip
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000463 material Substances 0.000 claims abstract description 63
- 239000000843 powder Substances 0.000 claims abstract description 32
- 229910000679 solder Inorganic materials 0.000 claims abstract description 30
- 239000002245 particle Substances 0.000 claims abstract description 27
- 229920005989 resin Polymers 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 12
- 230000005484 gravity Effects 0.000 claims description 9
- 230000005496 eutectics Effects 0.000 claims description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 229910017944 Ag—Cu Inorganic materials 0.000 claims description 2
- 229910000846 In alloy Inorganic materials 0.000 claims description 2
- 229910001245 Sb alloy Inorganic materials 0.000 claims description 2
- 229910020816 Sn Pb Inorganic materials 0.000 claims description 2
- 229910020836 Sn-Ag Inorganic materials 0.000 claims description 2
- 229910020922 Sn-Pb Inorganic materials 0.000 claims description 2
- 229910020988 Sn—Ag Inorganic materials 0.000 claims description 2
- 229910008783 Sn—Pb Inorganic materials 0.000 claims description 2
- 239000002140 antimony alloy Substances 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000003822 epoxy resin Substances 0.000 description 9
- 229920000647 polyepoxide Polymers 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910001361 White metal Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010969 white metal Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3201—Structure
- H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
- H01L2224/32013—Structure relative to the bonding area, e.g. bond pad the layer connector being larger than the bonding area, e.g. bond pad
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Die Bonding (AREA)
Description
1,2 フレーム
1a 凹部
3 LEDチップ
3a,3b 電極
4 ボンディングワイヤ
5 ダイボンディング材料
6,7 透光性樹脂
Claims (8)
- フレームもしくは基板のパッド上にボンディングされるLEDチップを備え、上記LEDチップはダイボンディング材料を用いて上記フレームもしくは基板のパッドに対してボンディングされるLED発光装置であって、
上記ダイボンディング材料は、上記LEDチップの平面的な大きさよりも大の広さ範囲に設けられているとともに、ハンダと白色微粉末とを含有しており、かつ、上記LEDチップを囲む領域において、上記白色微粉末は、当該ダイボンディング材料の露出表面側における含有率が大きいことを特徴とする、LED発光装置。 - 上記白色微粉末として、TiO2またはBNが用いられている、請求項1に記載のLED発光装置。
- 上記ダイボンディング材料は、Ag粉末をさらに含有している、請求項1または2に記載のLED発光装置。
- 上記ハンダは、上記LEDチップの下面、並びに、上記フレームもしくは基板のパッドと共晶結合している、請求項1ないし3のいずれかに記載のLED発光装置。
- 上記LEDチップおよび上記ダイボンディング材料の露出面は、軟質の透光性樹脂で覆われているとともに、当該軟質の透光性樹脂の露出面は、剛性の高い透光性樹脂で覆われている、請求項1ないし4のいずれかに記載のLED発光装置。
- 上記ハンダは、Sn−Pb、Sn−Ag、Sn−Ag−Cuのうち、いずれか選択したものである、請求項1ないし5のいずれかに記載のLED発光装置。
- 上記ダイボンディング材料は、インジウム、インジウム合金、またはアンチモン合金を含む、請求項1ないし6のいずれかに記載のLED発光装置。
- フレームもしくは基板のパッド上にボンディングされるLEDチップを備え、上記LEDチップはダイボンディング材料を用いて上記フレームもしくは基板のパッド上に対してボンディングされるLED発光装置の製造方法であって、
上記ダイボンディング材料は、白色微粉末と、ハンダ粒子とを含有してこれらを所定の粘度をもった溶剤に混合した材料が用いられており、
上記ハンダ粒子の比重は上記溶剤の比重よりも大であり、
上記フレームに上記ダイボンディング材料を上記LEDチップの平面的な大きさより大の広さ範囲に塗布し、上記ハンダ粒子を沈み込ませるとともに上記白色微粉末を表面側に浮き上がらせる工程と、上記塗布されたダイボンディング材料上に上記LEDチップを載置する工程と、上記ダイボンディング材料を上記ハンダ粒子の融点よりも高い温度まで加熱するとともに上記溶剤を蒸発させる工程と、
を含むことを特徴とする、LED発光装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006080365A JP4811927B2 (ja) | 2006-03-23 | 2006-03-23 | Led発光装置およびその製造方法 |
US11/687,407 US20070221940A1 (en) | 2006-03-23 | 2007-03-16 | Led device and production method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006080365A JP4811927B2 (ja) | 2006-03-23 | 2006-03-23 | Led発光装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007258420A JP2007258420A (ja) | 2007-10-04 |
JP4811927B2 true JP4811927B2 (ja) | 2011-11-09 |
Family
ID=38532418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006080365A Expired - Fee Related JP4811927B2 (ja) | 2006-03-23 | 2006-03-23 | Led発光装置およびその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20070221940A1 (ja) |
JP (1) | JP4811927B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4579654B2 (ja) * | 2004-11-11 | 2010-11-10 | パナソニック株式会社 | 半導体発光装置及びその製造方法、並びに半導体発光装置を備えた照明モジュール及び照明装置 |
KR101438826B1 (ko) | 2008-06-23 | 2014-09-05 | 엘지이노텍 주식회사 | 발광장치 |
TW201135989A (en) * | 2010-01-25 | 2011-10-16 | Vishay Sprague Inc | Metal based electronic component package and the method of manufacturing the same |
CN102834942B (zh) * | 2010-04-09 | 2016-04-13 | 罗姆股份有限公司 | Led模块 |
JP2012178400A (ja) * | 2011-02-25 | 2012-09-13 | Toyoda Gosei Co Ltd | Ledランプ |
JP2015070170A (ja) * | 2013-09-30 | 2015-04-13 | 豊田合成株式会社 | 発光装置及びその製造方法 |
CN104993041B (zh) * | 2015-06-04 | 2019-06-11 | 陈建伟 | 一种led倒装芯片固晶导电粘接结构及其安装方法 |
JP7428916B2 (ja) | 2021-12-27 | 2024-02-07 | 日亜化学工業株式会社 | 発光装置の製造方法および発光装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58193650U (ja) * | 1982-06-17 | 1983-12-23 | 三洋電機株式会社 | 発光ダイオ−ド表示装置 |
JPS60261689A (ja) * | 1984-06-07 | 1985-12-24 | Matsushita Electric Ind Co Ltd | クリ−ム半田 |
JP4417596B2 (ja) * | 2001-09-19 | 2010-02-17 | 富士通株式会社 | 電子部品の実装方法 |
JP3913090B2 (ja) * | 2002-02-28 | 2007-05-09 | ローム株式会社 | 発光ダイオードランプ |
KR20040093384A (ko) * | 2002-02-28 | 2004-11-05 | 로무 가부시키가이샤 | 발광다이오드 램프 |
JP2004127988A (ja) * | 2002-09-30 | 2004-04-22 | Toyoda Gosei Co Ltd | 白色発光装置 |
JP3893100B2 (ja) * | 2002-10-29 | 2007-03-14 | 新光電気工業株式会社 | 配線基板への電子部品搭載方法 |
JP2005117035A (ja) * | 2003-09-19 | 2005-04-28 | Showa Denko Kk | フリップチップ型窒化ガリウム系半導体発光素子およびその製造方法 |
US7321161B2 (en) * | 2003-12-19 | 2008-01-22 | Philips Lumileds Lighting Company, Llc | LED package assembly with datum reference feature |
JP4433876B2 (ja) * | 2004-05-18 | 2010-03-17 | 住友金属鉱山株式会社 | エポキシ樹脂組成物及びそれを用いた光半導体用接着剤 |
JP5140275B2 (ja) * | 2004-08-18 | 2013-02-06 | 株式会社トクヤマ | 発光素子搭載用セラミックス基板およびその製造方法 |
-
2006
- 2006-03-23 JP JP2006080365A patent/JP4811927B2/ja not_active Expired - Fee Related
-
2007
- 2007-03-16 US US11/687,407 patent/US20070221940A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2007258420A (ja) | 2007-10-04 |
US20070221940A1 (en) | 2007-09-27 |
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