JP2007258420A - Led発光装置およびその製造方法 - Google Patents
Led発光装置およびその製造方法 Download PDFInfo
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- JP2007258420A JP2007258420A JP2006080365A JP2006080365A JP2007258420A JP 2007258420 A JP2007258420 A JP 2007258420A JP 2006080365 A JP2006080365 A JP 2006080365A JP 2006080365 A JP2006080365 A JP 2006080365A JP 2007258420 A JP2007258420 A JP 2007258420A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 62
- 239000000843 powder Substances 0.000 claims abstract description 29
- 229910000679 solder Inorganic materials 0.000 claims abstract description 27
- 239000002245 particle Substances 0.000 claims description 27
- 229920005989 resin Polymers 0.000 claims description 19
- 239000011347 resin Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 12
- 230000005484 gravity Effects 0.000 claims description 10
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 description 9
- 229920000647 polyepoxide Polymers 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 7
- 230000005496 eutectics Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 229910001361 White metal Inorganic materials 0.000 description 1
- 239000002140 antimony alloy Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000010969 white metal Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3201—Structure
- H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
- H01L2224/32013—Structure relative to the bonding area, e.g. bond pad the layer connector being larger than the bonding area, e.g. bond pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Die Bonding (AREA)
Abstract
【解決手段】本発明に係るLED発光装置Aは、フレーム1上にボンディングされるLEDチップ3を備え、LEDチップ3はダイボンディング材料5を用いてフレーム1に対してボンディングされているLED発光装置であって、ダイボンディング材料5はAgを含有しているとともに、所定の比率で白色微粉末およびハンダ粒子を含有している。
【選択図】 図1
Description
1,2 フレーム
1a 凹部
3 LEDチップ
3a,3b 電極
4 ボンディングワイヤ
5 ダイボンディング材料
6,7 透光性樹脂
Claims (4)
- フレームもしくは基板のパッド上にボンディングされるLEDチップを備え、上記LEDチップはダイボンディング材料を用いて上記フレームもしくは基板のパッドに対してボンディングされるLED発光装置であって、
上記ダイボンディング材料はAgを含有しているとともに、白色微粉末をさらに含有していることを特徴とする、LED発光装置。 - 上記白色微粉末として、TiO2またはBNが用いられている、請求項1に記載のLED発光装置。
- 上記ダイボンディング材料は、ハンダ粒子をさらに含有している、請求項1または2に記載のLED発光装置。
- フレームもしくは基板のパッド上にボンディングされるLEDチップを備え、上記LEDチップはダイボンディング材料を用いて上記フレームもしくは基板のパッド上に対してボンディングされるLED発光装置の製造方法であって、
上記ダイボンディング材料は、Ag粉末と、白色微粉末と、ハンダ粒子とを所定の粘度をもった樹脂に混合してなるペースト状材料が用いられており、
上記ハンダ粒子の比重は上記樹脂の比重よりも大であり、
上記フレームに上記ダイボンディング材料を上記LEDチップの平面的な大きさより大の広さ範囲に塗布する工程と、上記塗布されたダイボンディング材料上に上記LEDチップを載置する工程と、上記ダイボンディング材料を上記ハンダ粒子の融点よりも高い温度まで加熱する工程と、
を含むことを特徴とする、LED発光装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006080365A JP4811927B2 (ja) | 2006-03-23 | 2006-03-23 | Led発光装置およびその製造方法 |
US11/687,407 US20070221940A1 (en) | 2006-03-23 | 2007-03-16 | Led device and production method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006080365A JP4811927B2 (ja) | 2006-03-23 | 2006-03-23 | Led発光装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007258420A true JP2007258420A (ja) | 2007-10-04 |
JP4811927B2 JP4811927B2 (ja) | 2011-11-09 |
Family
ID=38532418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006080365A Expired - Fee Related JP4811927B2 (ja) | 2006-03-23 | 2006-03-23 | Led発光装置およびその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20070221940A1 (ja) |
JP (1) | JP4811927B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011126135A1 (ja) * | 2010-04-09 | 2011-10-13 | ローム株式会社 | Ledモジュール |
JP2012178400A (ja) * | 2011-02-25 | 2012-09-13 | Toyoda Gosei Co Ltd | Ledランプ |
JP7428916B2 (ja) | 2021-12-27 | 2024-02-07 | 日亜化学工業株式会社 | 発光装置の製造方法および発光装置 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4579654B2 (ja) * | 2004-11-11 | 2010-11-10 | パナソニック株式会社 | 半導体発光装置及びその製造方法、並びに半導体発光装置を備えた照明モジュール及び照明装置 |
KR101438826B1 (ko) | 2008-06-23 | 2014-09-05 | 엘지이노텍 주식회사 | 발광장치 |
TW201135989A (en) * | 2010-01-25 | 2011-10-16 | Vishay Sprague Inc | Metal based electronic component package and the method of manufacturing the same |
JP2015070170A (ja) * | 2013-09-30 | 2015-04-13 | 豊田合成株式会社 | 発光装置及びその製造方法 |
CN104993041B (zh) * | 2015-06-04 | 2019-06-11 | 陈建伟 | 一种led倒装芯片固晶导电粘接结构及其安装方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58193650U (ja) * | 1982-06-17 | 1983-12-23 | 三洋電機株式会社 | 発光ダイオ−ド表示装置 |
JPS60261689A (ja) * | 1984-06-07 | 1985-12-24 | Matsushita Electric Ind Co Ltd | クリ−ム半田 |
JP2003324216A (ja) * | 2002-02-28 | 2003-11-14 | Rohm Co Ltd | 発光ダイオードランプ |
JP2005117035A (ja) * | 2003-09-19 | 2005-04-28 | Showa Denko Kk | フリップチップ型窒化ガリウム系半導体発光素子およびその製造方法 |
JP2005330327A (ja) * | 2004-05-18 | 2005-12-02 | Sumitomo Metal Mining Co Ltd | エポキシ樹脂組成物及びそれを用いた光半導体用接着剤 |
WO2006019090A1 (ja) * | 2004-08-18 | 2006-02-23 | Tokuyama Corporation | 発光素子搭載用セラミックス基板およびその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4417596B2 (ja) * | 2001-09-19 | 2010-02-17 | 富士通株式会社 | 電子部品の実装方法 |
KR20040093384A (ko) * | 2002-02-28 | 2004-11-05 | 로무 가부시키가이샤 | 발광다이오드 램프 |
JP2004127988A (ja) * | 2002-09-30 | 2004-04-22 | Toyoda Gosei Co Ltd | 白色発光装置 |
JP3893100B2 (ja) * | 2002-10-29 | 2007-03-14 | 新光電気工業株式会社 | 配線基板への電子部品搭載方法 |
US7321161B2 (en) * | 2003-12-19 | 2008-01-22 | Philips Lumileds Lighting Company, Llc | LED package assembly with datum reference feature |
-
2006
- 2006-03-23 JP JP2006080365A patent/JP4811927B2/ja not_active Expired - Fee Related
-
2007
- 2007-03-16 US US11/687,407 patent/US20070221940A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58193650U (ja) * | 1982-06-17 | 1983-12-23 | 三洋電機株式会社 | 発光ダイオ−ド表示装置 |
JPS60261689A (ja) * | 1984-06-07 | 1985-12-24 | Matsushita Electric Ind Co Ltd | クリ−ム半田 |
JP2003324216A (ja) * | 2002-02-28 | 2003-11-14 | Rohm Co Ltd | 発光ダイオードランプ |
JP2005117035A (ja) * | 2003-09-19 | 2005-04-28 | Showa Denko Kk | フリップチップ型窒化ガリウム系半導体発光素子およびその製造方法 |
JP2005330327A (ja) * | 2004-05-18 | 2005-12-02 | Sumitomo Metal Mining Co Ltd | エポキシ樹脂組成物及びそれを用いた光半導体用接着剤 |
WO2006019090A1 (ja) * | 2004-08-18 | 2006-02-23 | Tokuyama Corporation | 発光素子搭載用セラミックス基板およびその製造方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011126135A1 (ja) * | 2010-04-09 | 2011-10-13 | ローム株式会社 | Ledモジュール |
CN102834942A (zh) * | 2010-04-09 | 2012-12-19 | 罗姆股份有限公司 | Led模块 |
JPWO2011126135A1 (ja) * | 2010-04-09 | 2013-07-11 | ローム株式会社 | Ledモジュール |
JP5939977B2 (ja) * | 2010-04-09 | 2016-06-29 | ローム株式会社 | Ledモジュール |
CN105720180A (zh) * | 2010-04-09 | 2016-06-29 | 罗姆股份有限公司 | Led模块 |
US9722157B2 (en) | 2010-04-09 | 2017-08-01 | Rohm Co., Ltd. | LED module |
CN105720180B (zh) * | 2010-04-09 | 2018-05-29 | 罗姆股份有限公司 | Led模块 |
US11605765B2 (en) | 2010-04-09 | 2023-03-14 | Rohm Co., Ltd. | LED module |
JP2012178400A (ja) * | 2011-02-25 | 2012-09-13 | Toyoda Gosei Co Ltd | Ledランプ |
JP7428916B2 (ja) | 2021-12-27 | 2024-02-07 | 日亜化学工業株式会社 | 発光装置の製造方法および発光装置 |
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Publication number | Publication date |
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JP4811927B2 (ja) | 2011-11-09 |
US20070221940A1 (en) | 2007-09-27 |
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