JP4811233B2 - Electronic component package - Google Patents

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JP4811233B2
JP4811233B2 JP2006280053A JP2006280053A JP4811233B2 JP 4811233 B2 JP4811233 B2 JP 4811233B2 JP 2006280053 A JP2006280053 A JP 2006280053A JP 2006280053 A JP2006280053 A JP 2006280053A JP 4811233 B2 JP4811233 B2 JP 4811233B2
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component
substrate
electronic component
component substrate
mold resin
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JP2007259410A (en
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敦 鷹野
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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本発明は表面弾性波素子をモールド樹脂で覆った電子部品パッケージに関するものである。   The present invention relates to an electronic component package in which a surface acoustic wave element is covered with a mold resin.

図１３は電子部品としてＳＡＷ（表面弾性波）フィルタ１を挙げ、従来の電子部品パッケージを示したものである。   FIG. 13 shows a SAW (surface acoustic wave) filter 1 as an electronic component, and shows a conventional electronic component package.

このように、従来の電子部品パッケージは、部品基板２と、部品基板２の下面に配置した表面弾性波素子としてのＩＤＴ電極３と、部品基板２の下方を覆う部品カバー４とを備え、ＩＤＴ電極３と部品カバー４との間には、弾性波の振動空間を気密状態で保持するためのキャビティ５が形成されている。   As described above, the conventional electronic component package includes the component substrate 2, the IDT electrode 3 as a surface acoustic wave element disposed on the lower surface of the component substrate 2, and the component cover 4 that covers the lower portion of the component substrate 2. A cavity 5 is formed between the electrode 3 and the component cover 4 for holding the vibration space of the elastic wave in an airtight state.

なお、この出願の発明に関連する先行技術文献情報としては、例えば特許文献１が知られている。
特開平１−２０９８１１号公報 For example, Patent Document 1 is known as prior art document information related to the invention of this application.
JP-A-1-209811

近年、前述のような従来の電子部品パッケージでは、部品基板２の表面を伝搬しない不要波（以下バルク波という）により、周波数特性が劣化するという問題が発生している。   In recent years, in the conventional electronic component package as described above, there has been a problem that frequency characteristics deteriorate due to unnecessary waves (hereinafter referred to as bulk waves) that do not propagate on the surface of the component substrate 2.

これは主に、ＩＤＴ電極３が設けられた部品基板２とその周囲部分における音響インピーダンスの差が大きいことに起因している。   This is mainly due to the large difference in acoustic impedance between the component substrate 2 on which the IDT electrode 3 is provided and its peripheral portion.

すなわち、入力側のＩＤＴ電極３ａからは表面弾性波以外にも、部品基板２の中を伝搬するバルク波も放出され、このバルク波は部品基板２の側面で反射し出力トランスデューサへ到達することで、このバルク波も出力側のＩＤＴ電極３ｂで検出されてしまい、ＳＡＷフィルタ１の周波数特性が劣化してしまう。   That is, the IDT electrode 3a on the input side emits not only the surface acoustic wave but also a bulk wave propagating through the component substrate 2, and this bulk wave is reflected by the side surface of the component substrate 2 and reaches the output transducer. This bulk wave is also detected by the IDT electrode 3b on the output side, and the frequency characteristics of the SAW filter 1 are deteriorated.

そして、部品基板２の側面におけるバルク波の反射は、部品基板２とこの部品基板２の周囲部分（この図１３においては空気となる）とで弾性率が著しく異なり、これに比例して部品基板２から外気に至る音響インピーダンスの差が大きくなりその分反射が大きくなるからである。   The reflection of the bulk wave on the side surface of the component substrate 2 is remarkably different in elasticity between the component substrate 2 and the peripheral portion of the component substrate 2 (air in FIG. 13), and the component substrate is proportional to this. This is because the difference in acoustic impedance from 2 to the outside air increases and the reflection increases accordingly.

そして特に近年、電子部品の小型化が進み、ＩＤＴ電極３と部品基板２の側面との距離が短くなっていることから、バルク波により周波数特性が劣化する問題が顕在化しているのである。   In particular, in recent years, electronic components have been miniaturized, and the distance between the IDT electrode 3 and the side surface of the component substrate 2 has been shortened. Thus, the problem that the frequency characteristics are deteriorated due to bulk waves has become apparent.

そこで本発明は、バルク波による周波数特性の劣化を低減し、電子部品の周波数特性を向上させることを目的とする。   Therefore, an object of the present invention is to reduce the deterioration of frequency characteristics due to bulk waves and improve the frequency characteristics of electronic components.

そして、この目的を達成するために本発明は、実装基板上に配置された外部電極を介して実装された電子部品をモールド樹脂で被覆した電子部品パッケージにおいて、電子部品は、圧電体からなる部品基板の下面に配置したＩＤＴ電極を部品カバーで覆った構造であり、部品基板の上面とモールド樹脂との間に弾性率が部品基板より小さく且つモールド樹脂より大きい中間弾性層を設けた構造としたのである。 In order to achieve this object, the present invention provides an electronic component package in which an electronic component mounted via an external electrode disposed on a mounting substrate is covered with a mold resin. The electronic component is a component made of a piezoelectric body. The IDT electrode disposed on the lower surface of the substrate is covered with a component cover, and an intermediate elastic layer having an elastic modulus smaller than that of the component substrate and larger than that of the mold resin is provided between the upper surface of the component substrate and the mold resin. It is.

このような構成によれば、電子部品の内部から外側に向かって、部品基板、中間弾性層、モールド樹脂の順に弾性率が小さく（軟らかく）なり、この順に滑らかにバルク波の音響インピーダンスを推移させることができる。したがって、部品基板の側面に到達したバルク波を、部品基板から中間弾性層へ、また中間弾性層からモールド樹脂へとスムーズに伝搬させることができ、その結果として、部品基板内部のバルク波を低減し、電子部品の周波数特性を向上させることができるのである。   According to such a configuration, the elastic modulus decreases (soft) in the order of the component substrate, the intermediate elastic layer, and the mold resin from the inside to the outside of the electronic component, and the acoustic impedance of the bulk wave is smoothly changed in this order. be able to. Therefore, the bulk wave that reaches the side surface of the component board can be smoothly propagated from the component board to the intermediate elastic layer, and from the intermediate elastic layer to the mold resin. As a result, the bulk wave inside the component board is reduced. In addition, the frequency characteristics of the electronic component can be improved.

（実施の形態１）
実施の形態１の電子部品パッケージについて、電子部品としてアンテナ共用器用弾性波装置（以下ＳＡＷデュプレクサ６という。）を例に挙げて説明する。 (Embodiment 1)
The electronic component package of the first embodiment will be described by taking an elastic wave device for an antenna duplexer (hereinafter referred to as SAW duplexer 6) as an example of the electronic component.

図１に示すように、このＳＡＷデュプレクサ６は、部品基板７と、この部品基板７の下面に配置した共振素子となるＩＤＴ電極８と、部品基板７の下方を覆う部品カバー９とを備えている。そして、この部品カバー９の上面のＩＤＴ電極８に対向する部分には、凹部１０を有している。なお、この凹部１０は、ＩＤＴ電極８間を伝播する表面弾性波の振動空間となるキャビティ１１を形成するものである。また、部品基板７の側面は加工変質層１２でありこの部品基板７の上面には保護体１３を配置している。なお、加工変質層１２とは、図２の拡大図に示すように、部品基板７の表面が切断時の機械的エネルギーを受け、塑性変形して生じた凹凸部分を言う。   As shown in FIG. 1, the SAW duplexer 6 includes a component substrate 7, an IDT electrode 8 serving as a resonance element disposed on the lower surface of the component substrate 7, and a component cover 9 that covers the lower portion of the component substrate 7. Yes. A concave portion 10 is provided in a portion of the upper surface of the component cover 9 facing the IDT electrode 8. In addition, this recessed part 10 forms the cavity 11 used as the vibration space of the surface acoustic wave which propagates between the IDT electrodes 8. FIG. Further, the side surface of the component substrate 7 is a work-affected layer 12, and a protective body 13 is disposed on the upper surface of the component substrate 7. As shown in the enlarged view of FIG. 2, the work-affected layer 12 refers to a concavo-convex portion generated by plastic deformation of the surface of the component substrate 7 that receives mechanical energy during cutting.

さらに、このＳＡＷデュプレクサ６は、実装基板１４上の外部電極１５を介して実装基板１４上に実装され、この実装基板１４上においてモールド樹脂１６で被覆することで電子部品パッケージを形成している。   Further, the SAW duplexer 6 is mounted on the mounting substrate 14 via the external electrode 15 on the mounting substrate 14, and an electronic component package is formed by covering the mounting substrate 14 with a mold resin 16.

そして上記モールド樹脂１６および保護体１３としてはＳｉＯ 2 のフィラを含有するエポキシ樹脂を用いた。 As the mold resin 16 and the protector 13, an epoxy resin containing a SiO 2 filler was used.

また、本実施の形態では、部品基板７はＬｉＴａＯ3を用いて形成し、部品カバー９はシリコン、ＩＤＴ電極８はアルミニウムで形成した。 In the present embodiment, the component substrate 7 is formed using LiTaO 3 , the component cover 9 is formed of silicon, and the IDT electrode 8 is formed of aluminum.

その他、部品基板７の材料としてＬｉＮｂＯ3などの圧電体が挙げられ、またＩＤＴ電極８の材料として他の金属材料を用いてもよい。 In addition, a piezoelectric material such as LiNbO 3 may be used as the material for the component substrate 7, and other metal materials may be used as the material for the IDT electrode 8.

そして、この電子部品パッケージにおいては加工変質層１２及び保護体１３の弾性率が部品基板７の弾性率より小さく且つモールド樹脂１６の弾性率より大きい中間弾性層１７を構成しており、部品基板７とモールド樹脂１６との間にこの中間弾性層１７を介在させることで、バルク波による周波数特性の劣化を低減し、電子部品の周波数特性を向上させることができるのである。   In this electronic component package, an intermediate elastic layer 17 in which the elastic modulus of the work-affected layer 12 and the protective body 13 is smaller than the elastic modulus of the component substrate 7 and larger than the elastic modulus of the mold resin 16 is formed. By interposing this intermediate elastic layer 17 between the resin and the mold resin 16, it is possible to reduce the deterioration of the frequency characteristic due to the bulk wave and improve the frequency characteristic of the electronic component.

すなわち、部品基板７とモールド樹脂１６の間に中間弾性層１７を介在させることにより、部品基板７からモールド樹脂１６に至るバルク波の放出経路における弾性率の変移が順に小さくなるというように、部品基板７からモールド樹脂１６にかけて弾性率がなめらかに変移するようになる。   That is, by interposing the intermediate elastic layer 17 between the component substrate 7 and the mold resin 16, the change in elastic modulus in the bulk wave emission path from the component substrate 7 to the mold resin 16 is sequentially reduced. The elastic modulus changes smoothly from the substrate 7 to the mold resin 16.

そして、この弾性率の変移にともない音響インピーダンスも部品基板７からモールド樹脂１６の順に滑らかにバルク波の音響インピーダンスを変移させることができ、結果として、部品基板７の側面に到達したバルク波を、部品基板７から中間弾性層１７へ、さらには中間弾性層１７からモールド樹脂１６へと、電子部品の外側へスムーズに伝搬させることができ、バルク波による周波数特性の劣化を低減し、電子部品の周波数特性を向上させることができるからである。   As the elastic modulus changes, the acoustic impedance of the bulk wave can be changed smoothly in the order from the component substrate 7 to the mold resin 16, and as a result, the bulk wave reaching the side surface of the component substrate 7 is From the component substrate 7 to the intermediate elastic layer 17, and further from the intermediate elastic layer 17 to the mold resin 16, it can be smoothly propagated to the outside of the electronic component, reducing the deterioration of the frequency characteristics due to the bulk wave, This is because the frequency characteristics can be improved.

なお、この中間弾性層１７を形成するにあたり、部品基板７の側面においては加工変質層１２を用いて、また部品基板７の上面においては保護体１３を用いたが、これらは電子部品パッケージの生産性を考慮したものであり、以下にその製造方法を説明する。   In forming the intermediate elastic layer 17, the work-affected layer 12 is used on the side surface of the component substrate 7, and the protective body 13 is used on the upper surface of the component substrate 7. The manufacturing method will be described below.

はじめに、ウエハ状の部品基板７を複数の区画に分ける。なお、図３はこの区画の一つを示したものである。そして、ウエハ状の部品基板７の下面全体にアルミニウムを蒸着スパッタし、その後、ドライエッチング加工でＩＤＴ電極８等の電極パターンを形成する。なお、ＩＤＴ電極８の両端部には、短絡電極を平行に配置した反射器を配置するのが一般的であるが、簡略化して示した。   First, the wafer-like component substrate 7 is divided into a plurality of sections. FIG. 3 shows one of these sections. Then, aluminum is vapor-deposited and sputtered on the entire lower surface of the wafer-like component substrate 7, and then an electrode pattern such as the IDT electrode 8 is formed by dry etching. In addition, although it is common to arrange | position the reflector which has arrange | positioned the short circuit electrode in parallel at the both ends of the IDT electrode 8, it has shown it simplified.

次に、図４（ａ）に示すＩＤＴ電極８等の所定の電極パターンを形成したウエハ状態の部品基板７に、図４（ｂ）で示すように部品基板７上全体に感光性樹脂層１８を形成し、マスク１９を用いてＩＤＴ電極８等の所定の電極パターンに相当する部分以外をマスキングし、露光し現像することで図４（ｃ）で示すようにマスキングしていない部分だけ感光性樹脂層１８が硬化して残り、マスキングした部分には残らない。   Next, a photosensitive resin layer 18 is formed on the entire component substrate 7 as shown in FIG. 4B on the component substrate 7 in a wafer state on which a predetermined electrode pattern such as the IDT electrode 8 shown in FIG. 4A, and a mask 19 is used to mask portions other than a portion corresponding to a predetermined electrode pattern such as the IDT electrode 8, and the exposure and development are performed so that only the unmasked portion is photosensitive as shown in FIG. The resin layer 18 remains cured and does not remain on the masked portion.

その後、図４（ｄ）で示すように、部品基板７の上面全体にＳｉＯ2をスパッタし、次にこの部品基板７を、剥離液などに浸漬し、感光性樹脂層１８を溶解して部品基板７から脱落させる。そうすると、図４（ｅ）で示すように、感光性樹脂層１８のない部分、すなわちＩＤＴ電極８と引き出し電極（図示せず）以外の部分にのみＳｉＯ2が残り、この残ったＳｉＯ2を接着部１９とする。 Thereafter, as shown in FIG. 4 (d), SiO 2 is sputtered on the entire upper surface of the component substrate 7, and then the component substrate 7 is immersed in a stripping solution or the like to dissolve the photosensitive resin layer 18 and dissolve the component. Drop off from the substrate 7. Then, as shown in FIG. 4 (e), SiO 2 remains only in the portion without the photosensitive resin layer 18, that is, the portion other than the IDT electrode 8 and the extraction electrode (not shown), and the remaining SiO 2 is bonded. This is part 19.

一方、部品カバー９は図４（ｆ）に示すように、シリコン板の下面に、前記ＩＤＴ電極８と向かい合う部分に、ドライエッチング加工あるいはサンドブラスト加工で凹部１０を形成し、この部品カバー９と部品基板７とを、接着部１９を介して、常温で直接原子間結合することでＳＡＷデュプレクサ６の集合体を形成することができる。なお、本実施の形態では部品カバー９を接着する工程は真空で行った。   On the other hand, as shown in FIG. 4 (f), the component cover 9 has a recess 10 formed on the bottom surface of the silicon plate facing the IDT electrode 8 by dry etching or sandblasting. An assembly of SAW duplexers 6 can be formed by directly bonding atoms between the substrate 7 and the substrate via the bonding portion 19 at room temperature. In the present embodiment, the process of bonding the component cover 9 is performed in a vacuum.

次に、図５（ａ）で示すように、上記ＳＡＷデュプレクサ６の集合体を反転し、部品基板７の上面に保護体１３を配置する。この時、保護体１３と前記部品基板７とが密着するように、軽く押圧（２ａｔｍ〜３ａｔｍ）して接着するとよい。   Next, as shown in FIG. 5A, the assembly of the SAW duplexers 6 is inverted, and the protective body 13 is disposed on the upper surface of the component substrate 7. At this time, the protective body 13 and the component substrate 7 may be lightly pressed (2 atm to 3 atm) and bonded to each other so as to be in close contact with each other.

その後、図５（ｂ）に示すように、回転刃２０を用いて、保護体１３の上面から部品カバー９の下面までを電子部品毎に切断し、分離する。なお、この回転刃２０はダイヤモンド砥粒を付着させたものであり、この回転刃２０の砥粒の番手が＃１０００以上＃２０００以下であるものを用いた。また、この回転刃２０の切断速度は、毎秒約１０ｍｍ（スピンドルスピード５０００〜６０００ｒｐｍ）とした。   Thereafter, as shown in FIG. 5B, the rotating blade 20 is used to cut and separate the electronic component from the upper surface of the protection body 13 to the lower surface of the component cover 9. In addition, this rotary blade 20 has diamond abrasive grains attached thereto, and the rotary blade 20 has an abrasive grain count of # 1000 to # 2000. The cutting speed of the rotary blade 20 was about 10 mm per second (spindle speed 5000 to 6000 rpm).

次に、図６のＳＡＷデュプレクサ６の断面図（図３のＢ−Ｂ断面）に示すように、部品カバー９にドライエッチング加工により貫通孔２１を設け、この貫通孔２１の内側にＴｉ、Ｎｉ、Ａｕを順次蒸着し金属膜を形成し、さらにその金属膜の内部にはんだを印刷して外部端子接続部２２を形成する。次に、この外部端子接続部２２の下面に実装基板１４の外部電極１５に接合される図７の受信端子２３、アンテナ端子２４、送信端子２５、グランド端子２６を形成する。   Next, as shown in a sectional view of the SAW duplexer 6 in FIG. 6 (BB cross section in FIG. 3), a through hole 21 is provided in the component cover 9 by dry etching, and Ti, Ni are formed inside the through hole 21. Then, Au is sequentially deposited to form a metal film, and solder is printed inside the metal film to form the external terminal connection portion 22. Next, the receiving terminal 23, the antenna terminal 24, the transmitting terminal 25, and the ground terminal 26 of FIG. 7 bonded to the external electrode 15 of the mounting substrate 14 are formed on the lower surface of the external terminal connecting portion 22.

なお、図７は部品カバー９の下面図であり、外部電極１５に接合される受信端子２３、アンテナ端子２４、送信端子２５、グランド端子２６の配置位置を示している。   FIG. 7 is a bottom view of the component cover 9 and shows the arrangement positions of the reception terminal 23, the antenna terminal 24, the transmission terminal 25, and the ground terminal 26 that are joined to the external electrode 15.

そして、図１に示すように、外部電極１５を介して前述のＳＡＷデュプレクサ６を実装基板１４上に実装し、その後このＳＡＷデュプレクサ６を、金型に入れ、この金型に加熱したモールド樹脂１６を樹脂温度１７５℃、注入圧力５０〜１００ａｔｍで注入し、その後冷却して電子部品パッケージを成形するのである。   Then, as shown in FIG. 1, the SAW duplexer 6 described above is mounted on the mounting substrate 14 via the external electrode 15, and then the SAW duplexer 6 is placed in a mold and the mold resin 16 heated in the mold is heated. Is injected at a resin temperature of 175 ° C. and an injection pressure of 50 to 100 atm, and then cooled to form an electronic component package.

そして、このような製造過程において、図２に示す部品基板７の側面の中間弾性層１７となる加工変質層１２は、図５（ｂ）に示す回転刃２０を用いてウエハ状のＳＡＷデュプレクサ６を切断・分離する工程において、その回転刃２０の砥粒の番手を＃１０００以上＃２０００以下とすることによって切断面に細かな凹凸が形成され、この凹凸にモールド樹脂１６が入り込み混成構造となることで、この部分での弾性率は部品基板７より小さく且つモールド樹脂１６より大きい加工変質層１２が形成されるので、特に専用の工程を設けることなく容易に部品基板７の側面に中間弾性層１７を設けることができるのである。   In such a manufacturing process, the work-affected layer 12 to be the intermediate elastic layer 17 on the side surface of the component substrate 7 shown in FIG. 2 is used as the wafer-like SAW duplexer 6 using the rotary blade 20 shown in FIG. In the step of cutting / separating, by setting the count of the abrasive grains of the rotary blade 20 to # 1000 or more and # 2000 or less, fine irregularities are formed on the cut surface, and the mold resin 16 enters the irregularities to form a hybrid structure. As a result, the work-affected layer 12 having an elastic modulus smaller than that of the component substrate 7 and larger than that of the mold resin 16 is formed. Therefore, the intermediate elastic layer can be easily formed on the side surface of the component substrate 7 without providing a special process. 17 can be provided.

また、部品基板７の上面の中間弾性層１７となる保護体１３については、先に延べたようなウエハ状の集合体の表面に配置して軽く押圧するというように、簡単に形成することができるのである。   Further, the protective body 13 which becomes the intermediate elastic layer 17 on the upper surface of the component substrate 7 can be easily formed such that it is placed on the surface of the wafer-like assembly as previously extended and lightly pressed. It can be done.

なお、保護体１３を部品基板７の上面に配置する際、軽く押圧（２ａｔｍ〜３ａｔｍ）するのは、図８に示すように、一般的に部品基板７の表面には研磨加工による細かな凹凸があることから、常圧で保護体１３を配置するだけでは、この保護体１３と部品基板７が密着せず、凹凸に空気が介在してしまい、この空気の音響インピーダンスが部品基板７と著しく異なることから、バルク波２７は部品基板７と保護体１３との界面で殆ど反射してしまうが、保護体１３の配置の際に押圧することによって、部品基板７の凹凸にも保護体１３が入り込み密着度を高めることができ、部品基板７と音響インピーダンスが著しく乖離する空気の介在を低減することができ、部品基板７から保護体１３へのバルク波２７の透過量を増大させることができる。よってバルク波２７の積算減衰量を増大させ、結果として電子部品の周波数特性を向上させることができるのである。   When the protector 13 is placed on the upper surface of the component substrate 7, lightly pressing (2 atm to 3 atm) is generally performed on the surface of the component substrate 7 with fine irregularities by polishing as shown in FIG. Therefore, the protective body 13 and the component board 7 are not in close contact with each other only by placing the protective body 13 at normal pressure, and air is interposed between the projections and depressions, and the acoustic impedance of this air is significantly different from that of the component board 7. Since the bulk wave 27 is almost reflected at the interface between the component substrate 7 and the protection body 13 due to the difference, the protection body 13 is also applied to the unevenness of the component substrate 7 by pressing when the protection body 13 is arranged. It is possible to increase the penetration and adhesion degree, to reduce the presence of air in which the acoustic impedance is significantly separated from the component substrate 7, and to increase the transmission amount of the bulk wave 27 from the component substrate 7 to the protective body 13. . Therefore, the integrated attenuation amount of the bulk wave 27 can be increased, and as a result, the frequency characteristics of the electronic component can be improved.

さらに、上記保護体１３によって、電子部品の薄型化を達成することができる。   Further, the protective body 13 can achieve a thin electronic component.

すなわち、従来は前述のバルク波２７を減衰させるため、部品基板７の厚みを増加し、バルク波の伝搬距離を増やす手段をとっていた。しかし、単結晶構造である部品基板７と異なり、保護体１３は樹脂製のため、その分子構造は規則性が乏しく、したがって部品基板７よりも保護体１３の方がバルク波２７の減衰量が増加する。よって、同じバルク波２７の減衰率を得ようとすれば、部品基板７だけの場合より、保護体１３を設けた方が薄くできるからである。   That is, conventionally, in order to attenuate the bulk wave 27 described above, a means for increasing the thickness of the component substrate 7 and increasing the propagation distance of the bulk wave has been taken. However, unlike the component substrate 7 having a single crystal structure, since the protector 13 is made of resin, the molecular structure thereof is less regular. To increase. Therefore, if the attenuation rate of the same bulk wave 27 is to be obtained, it is possible to make the protective body 13 thinner than the case of using only the component substrate 7.

なお、本実施の形態では保護体１３として図８に示すようにフィラ２８を含有するエポキシ樹脂を用いたが、部品基板７との接着性がよく、部品基板７の撓みを押さえる程度の弾性率を有するものであれば他の物質を用いてもよい。なお、保護体１３として樹脂を用いる場合、フィラ２８を含まない一般的な樹脂テープの弾性率が３ＧＰａ未満であるから、樹脂にフィラ２８を含有させ、弾性率を３ＧＰａ以上とすることが好ましい。また、フィラ２８の含有率は、エポキシ樹脂を用いる場合、フィラ２８を過度に増加すると、接着性が悪くなることから、２０ｗｔ％〜５０ｗｔ％が望ましい。   In this embodiment, an epoxy resin containing a filler 28 is used as the protector 13 as shown in FIG. 8, but it has good adhesiveness with the component substrate 7 and has an elastic modulus enough to suppress the deflection of the component substrate 7. Other materials may be used as long as they have the following. In addition, when using resin as the protection body 13, since the elastic modulus of the general resin tape which does not contain the filler 28 is less than 3 GPa, it is preferable to make the resin contain the filler 28 and to make the elastic modulus 3 GPa or more. Moreover, since the adhesiveness will worsen when the filler 28 is increased too much when using an epoxy resin, the content rate of the filler 28 is desirable 20 wt%-50 wt%.

（実施の形態２）
本実施の形態２の実施の形態１との違いは、図９に示すように、キャビティ１１の下方に相当する部分にダミー電極２９を配置したことであり、外圧によるＳＡＷデュプレクサ６の損傷を抑制することができる。これは、保護体１３を設ける際、押圧する必要があることから、薄型でキャビティ１１を有する損傷しやすい電子部品には特に有効である。 (Embodiment 2)
The difference between the second embodiment and the first embodiment is that, as shown in FIG. 9, the dummy electrode 29 is disposed in a portion corresponding to the lower portion of the cavity 11, and the damage of the SAW duplexer 6 due to the external pressure is suppressed. can do. This is particularly effective for a thin and easily damaged electronic component having a cavity 11 because it needs to be pressed when the protective body 13 is provided.

すなわち、ダミー電極２９が、実装基板１４とＳＡＷデュプレクサ６との間の支柱となるため、部品カバー９に加わる外部からの圧力を効果的に分散することができる。よってこの結果、電子部品パッケージの外圧に対する強度を向上させ、ＳＡＷデュプレクサ６の損傷を防止することができるのである。   That is, since the dummy electrode 29 serves as a support between the mounting substrate 14 and the SAW duplexer 6, the external pressure applied to the component cover 9 can be effectively dispersed. Therefore, as a result, the strength of the electronic component package against external pressure can be improved, and damage to the SAW duplexer 6 can be prevented.

また、部品基板７上に複数のＩＤＴ電極８を形成する場合、全てのＩＤＴ電極８を覆うように一つのキャビティ１１を設けてもよいが、本実施の形態のように、一つあるいは二つのＩＤＴ電極８毎にキャビティ１１を形成してもよい。このように、キャビティ１１を複数形成することによってＳＡＷデュプレクサ６の損傷を抑制することができる。   Further, when a plurality of IDT electrodes 8 are formed on the component substrate 7, one cavity 11 may be provided so as to cover all the IDT electrodes 8, but as in the present embodiment, one or two cavities 11 are provided. A cavity 11 may be formed for each IDT electrode 8. In this way, the formation of a plurality of cavities 11 can suppress damage to the SAW duplexer 6.

すなわち、キャビティ１１部分に支えとなるものが無い場合、部品基板７や部品カバー９に外圧が印加されると、このキャビティ１１の方へ割れたりして損傷してしまうことがある。しかしキャビティ１１を複数に分割することによって、このキャビティ１１とキャビティ１１の間に仕切り壁３０が形成され、この仕切り壁３０が支柱となって、外部応力を分散することができるのである。そしてこの結果、部品基板７あるいは部品カバー９の割れを抑制することができるのである。なお、この仕切り壁３０はキャビティ１１内に、別途樹脂等により任意に形成してもよい。   That is, when there is nothing to support the cavity 11 portion, when external pressure is applied to the component substrate 7 and the component cover 9, the cavity 11 may be broken and damaged. However, by dividing the cavity 11 into a plurality of parts, a partition wall 30 is formed between the cavities 11 and the cavity 11, and the partition wall 30 can be a support column to disperse external stress. As a result, the component substrate 7 or the component cover 9 can be prevented from cracking. The partition wall 30 may be arbitrarily formed in the cavity 11 with a resin or the like separately.

また、この複数のキャビティ１１は個々完全に分割して形成してもよいが、隣接するキャビティ１１間にトンネル状の通路により繋がった連通路（図示せず）により一部連結してもよい。このように連通路を設けることによって、キャビティ１１の一部に過剰な外圧が印加された場合、その外圧を、連通路を介して他のキャビティ１１へと分散させることができる。そしてその結果、電子部品パッケージの外圧に対する強度を向上させることができるのである。   The plurality of cavities 11 may be formed by being completely divided individually, but may be partially connected by a communication path (not shown) connected between adjacent cavities 11 by a tunnel-like path. By providing the communication path in this manner, when an excessive external pressure is applied to a part of the cavity 11, the external pressure can be dispersed to other cavities 11 through the communication path. As a result, the strength against the external pressure of the electronic component package can be improved.

また、本実施の形態のＳＡＷデュプレクサ６は、ＩＤＴ電極８に対向する部分にダミー電極２９を配置し、実装基板１４の外部電極１５と接合させることにより、キャビティ１１の下方では部品カバー９と実装基板１４との間の隙間が小さくなり、モールド樹脂１６が入り込む量を減らすことができる。したがって、モールド加工時において、部品カバー９の下方からキャビティ１１に向かって印加される圧力を低減し、部品カバー９の損傷を抑制することができる。   In the SAW duplexer 6 according to the present embodiment, the dummy electrode 29 is disposed in a portion facing the IDT electrode 8 and joined to the external electrode 15 of the mounting substrate 14, so that the component cover 9 and the component cover 9 are mounted below the cavity 11. The gap between the substrate 14 is reduced, and the amount of the mold resin 16 entering can be reduced. Therefore, during molding, the pressure applied from below the component cover 9 toward the cavity 11 can be reduced, and damage to the component cover 9 can be suppressed.

その他の構成、製造方法、動作、効果については実施の形態１と同様であるため省略する。   Other configurations, manufacturing methods, operations, and effects are the same as those in the first embodiment, and are therefore omitted.

（実施の形態３）
本実施の形態３の実施の形態１との違いは、図１０に示すように、図７のグランド端子２６を一つにまとめ、受信端子２３、アンテナ端子２４、送信端子２５を除いた略全面に、大きなグランド端子３１を設けたことである。 (Embodiment 3)
The difference between the third embodiment and the first embodiment is that, as shown in FIG. 10, the ground terminals 26 of FIG. 7 are combined into one, and the substantially entire surface excluding the receiving terminal 23, the antenna terminal 24, and the transmitting terminal 25. In addition, a large ground terminal 31 is provided.

このような構造とすることにより、グランド端子３１が部品カバー９と実装基板１４との間の支柱となり、効果的に外圧を分散させ、ＳＡＷデュプレクサ６の損傷を防ぐことができる。   With such a structure, the ground terminal 31 becomes a support between the component cover 9 and the mounting substrate 14, and the external pressure can be effectively dispersed and damage to the SAW duplexer 6 can be prevented.

これは、保護体１３を設ける際、押圧する必要があることから、薄型かつキャビティ１１を有するような損傷しやすい電子部品には特に有効である。   This is particularly effective for an electronic component that is thin and easily damaged, such as having a cavity 11, because it is necessary to press the protective body 13.

またグランド端子３１があることによって、その体積分だけ部品カバー９と実装基板１４との間へ入り込むモールド樹脂１６の量が減り、部品カバー９の下方から印加される圧力を抑制することができる。   Further, the presence of the ground terminal 31 reduces the amount of the mold resin 16 that enters between the component cover 9 and the mounting substrate 14 by the volume of the ground terminal 31, thereby suppressing the pressure applied from below the component cover 9.

その他の構成、製造方法、動作、効果については実施の形態１と同様であるため省略する。   Other configurations, manufacturing methods, operations, and effects are the same as those in the first embodiment, and are therefore omitted.

なお、実施の形態１から３において、部品カバー９としてシリコンを用いたが、この部品カバー９はサファイア、水晶、ガラス、フィラを含有するエポキシ樹脂などを用いてもよい。さらに、図１１に示すように、部品カバー９として凹部のない平板を用い、部品カバー９と部品基板７との間にアルミニウムなどの金属、あるいはＳｉＯ2などの接着部３２を設けることによってキャビティ１１を形成してもよい。その他、図１２に示すように素子（ＩＤＴ電極８）の下方を覆う素子カバー３３を設け、その外周を部品カバー９で被覆してもよい。なお、これらの部品カバー９には、ＩＤＴ電極８を酸化や湿気による腐食から守る効果がある。 In the first to third embodiments, silicon is used as the component cover 9, but the component cover 9 may be made of sapphire, crystal, glass, epoxy resin containing filler, or the like. Further, as shown in FIG. 11, the cavity 11 is formed by using a flat plate without a concave portion as the component cover 9 and providing a bonding portion 32 such as a metal such as aluminum or SiO 2 between the component cover 9 and the component substrate 7. May be formed. In addition, as shown in FIG. 12, an element cover 33 covering the lower part of the element (IDT electrode 8) may be provided, and the outer periphery thereof may be covered with the component cover 9. These component covers 9 have an effect of protecting the IDT electrode 8 from corrosion due to oxidation and moisture.

本発明にかかる電子部品パッケージは、電子部品の周波数特性を向上させることができるため、ＳＡＷフィルタやＢＡＷ等の弾性波を利用した電子部品のパッケージにも応用できるものである。   Since the electronic component package according to the present invention can improve the frequency characteristics of the electronic component, the electronic component package can also be applied to an electronic component package using an elastic wave such as a SAW filter or BAW.

実施の形態１における電子部品パッケージの断面図Sectional drawing of the electronic component package in Embodiment 1 実施の形態１における電子部品パッケージの拡大断面図The expanded sectional view of the electronic component package in Embodiment 1 実施の形態１における部品基板の下面図Bottom view of component board in the first embodiment 実施の形態１におけるＳＡＷデュプレクサの製造工程図Manufacturing process diagram of SAW duplexer in Embodiment 1 実施の形態１におけるＳＡＷデュプレクサの製造工程図Manufacturing process diagram of SAW duplexer in Embodiment 1 実施の形態１におけるＳＡＷデュプレクサの断面図Sectional view of SAW duplexer in Embodiment 1 実施の形態１における部品カバーの下面図The bottom view of the component cover in Embodiment 1 電子部品内部におけるバルク波の透過と減衰を示す模式図Schematic diagram showing transmission and attenuation of bulk waves inside electronic components 実施の形態２における部品カバーの下面図The bottom view of the component cover in Embodiment 2 実施の形態３における部品カバーの下面図The bottom view of the component cover in Embodiment 3 他の実施の形態における電子部品パッケージの断面図Sectional drawing of the electronic component package in other embodiment さらに他の実施の形態における電子部品パッケージの断面図Sectional drawing of the electronic component package in other embodiment 従来の電子部品パッケージの断面図Sectional view of a conventional electronic component package

符号の説明Explanation of symbols

６ 電子部品
７ 部品基板
８ ＩＤＴ電極
９ 部品カバー
１２ 加工変質層
１３ 保護体
１４ 実装基板
１５ 外部電極
１６ モールド樹脂
１７ 中間弾性層 6 Electronic Component 7 Component Board 8 IDT Electrode 9 Component Cover 12 Processed Alteration Layer 13 Protective Body 14 Mounting Board 15 External Electrode 16 Mold Resin 17 Intermediate Elastic Layer

Claims (4)

実装基板と、この実装基板上に配置された外部電極と、この外部電極を介して前記実装基板上に実装された電子部品と、この電子部品を前記実装基板上において被覆したモールド樹脂とを備え、前記電子部品は、圧電体からなる部品基板と、この部品基板の下面に配置したＩＤＴ電極と、前記部品基板の下方を覆う部品カバーとを有し、前記部品基板の上面と前記モールド樹脂との間に弾性率が前記部品基板より小さく、かつ前記モールド樹脂より大きい中間弾性層を設けたことを特徴とする電子部品パッケージ。 A mounting substrate, an external electrode disposed on the mounting substrate, an electronic component mounted on the mounting substrate via the external electrode, and a mold resin that covers the electronic component on the mounting substrate. The electronic component includes a component substrate made of a piezoelectric body, an IDT electrode disposed on a lower surface of the component substrate, and a component cover that covers a lower portion of the component substrate. The upper surface of the component substrate, the mold resin, An electronic component package comprising an intermediate elastic layer having an elastic modulus smaller than that of the component substrate and larger than that of the mold resin. 前記中間弾性層を、弾性率が３ＧＰａ以上の樹脂により構成した請求項１に記載の電子部品パッケージ。The electronic component package according to claim 1, wherein the intermediate elastic layer is made of a resin having an elastic modulus of 3 GPa or more. 前記中間弾性層を、ＳｉＯThe intermediate elastic layer is made of SiO. 22 のフィラを２０ｗｔ％〜５０ｗｔ％含有させたエポキシ樹脂により構成した請求項１に記載の電子部品パッケージ。The electronic component package according to claim 1, wherein the electronic component package is made of an epoxy resin containing 20 wt% to 50 wt% of the filler. 前記中間弾性層を、前記部品基板の上面と前記モールド樹脂の間、および前記部品基板の側面と前記モールド樹脂の間に設けた請求項１に記載の電子部品パッケージ。The electronic component package according to claim 1, wherein the intermediate elastic layer is provided between an upper surface of the component substrate and the mold resin, and between a side surface of the component substrate and the mold resin.
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