JP4786440B2 - 面入射型受光素子および光受信モジュール - Google Patents
面入射型受光素子および光受信モジュール Download PDFInfo
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- JP4786440B2 JP4786440B2 JP2006184303A JP2006184303A JP4786440B2 JP 4786440 B2 JP4786440 B2 JP 4786440B2 JP 2006184303 A JP2006184303 A JP 2006184303A JP 2006184303 A JP2006184303 A JP 2006184303A JP 4786440 B2 JP4786440 B2 JP 4786440B2
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- 230000003287 optical effect Effects 0.000 claims description 27
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 23
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- 239000012535 impurity Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 18
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
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- 230000015572 biosynthetic process Effects 0.000 description 7
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- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Description
また、この光受信素子を光受信モジュールに適用することで、高周波応答特性に優れた光受信モジュールを得ることができる。
受光素子は、図1(a)に示すように半絶縁性InP基板101上に、MOCVD法によりInPバッファ層(undope、膜厚0.2μm)102およびn型InGaAsPコンタクト層(n型、不純物濃度:1x10^18cm^−3、膜厚0.4μm、Eg=0.8eV)103aを形成した後、受光部のみn型InGaAsPコンタクト層103aをInPバッファ層102まで、硫酸、過酸化水素、水の混酸でエッチングする(第一多層成長)。
その後、この多層構造を用いて実施例1、2と同様のウェハプロセスにより受光素子を作成する。
なお、実施例3では円孔を有するマスク材料として、酸化膜を用いたが窒化膜であってもよい。
Claims (4)
- 半導体基板上に、この半導体基板から順にn型高濃度層と、吸収層と、p型高濃度層とを含むp−i−n型多層構造を有する面入射型受光素子において、
前記n型高濃度層と、前記吸収層と、前記p型高濃度層とは、InGaAs、InGaAsP、InGaAlAs、GaInNAs、GaInNAsSbの何れかにより主として構成されており、
受光部の前記n型高濃度層は、第1の膜厚を有し、かつ前記受光部近傍の電極部では前記n型高濃度層は、第2の膜厚を有し、
前記第1の膜厚は、0.4μm以下かつ、前記第2の膜厚より薄く、
前記受光部の前記n型高濃度層と前記吸収層とのエネルギーバンドギャップ差が0.2eV以内であることを特徴とする面入射型受光素子。 - 半導体基板上に、この半導体基板から順にp型高濃度層と、吸収層と、n型高濃度層とを含むp−i−n型多層構造を有する面入射型受光素子において、
前記p型高濃度層と、前記吸収層と、前記n型高濃度層とは、InGaAs、InGaAsP、InGaAlAs、GaInNAs、GaInNAsSbの何れかにより主として構成されており、
受光部の前記p型高濃度層は、第1の膜厚を有し、かつ前記受光部近傍の電極部では前記p型高濃度層は、第2の膜厚を有し、
前記第1の膜厚は、0.4μm以下かつ、前記第2の膜厚より薄く、
前記受光部の前記p型高濃度層と前記吸収層とのエネルギーバンドギャップ差が0.2eV以内であることを特徴とする面入射型受光素子。 - 筐体内に受光素子とアンプとを配置し、光信号を受信して電気信号に変換する光受信モジュールにおいて、
前記受光素子は、半導体基板上に、この半導体基板から順にn型高濃度層と、吸収層と、p型高濃度層とを含むp−i−n型多層構造を有し、前記n型高濃度層と、前記吸収層と、前記p型高濃度層とは、InGaAs、InGaAsP、InGaAlAs、GaInNAs、GaInNAsSbの何れかにより主として構成されており、受光部の前記n型高濃度層は、第1の膜厚を有し、かつ前記受光部近傍の電極部では前記n型高濃度層は、第2の膜厚を有し、前記第1の膜厚は、0.4μm以下かつ、前記第2の膜厚より薄く、前記受光部の前記n型高濃度層と前記吸収層とのエネルギーバンドギャップ差が0.2eV以内であることを特徴とする光受信モジュール。 - 筐体内に受光素子とアンプとを配置し、光信号を受信して電気信号に変換する光受信モジュールにおいて、
前記受光素子は、半導体基板上に、この半導体基板から順にp型高濃度層と、吸収層と、n型高濃度層とを含むp−i−n型多層構造を有し、前記p型高濃度層と、前記吸収層と、前記n型高濃度層とは、InGaAs、InGaAsP、InGaAlAs、GaInNAs、GaInNAsSbの何れかにより主として構成されており、受光部の前記p型高濃度層は、第1の膜厚を有し、かつ前記受光部近傍の電極部では前記p型高濃度層は、第2の膜厚を有し、前記第1の膜厚は、0.4μm以下かつ、前記第2の膜厚より薄く、前記受光部の前記p型高濃度層と前記吸収層とのエネルギーバンドギャップ差が0.2eV以内であることを特徴とする光受信モジュール。
Priority Applications (2)
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JP2006184303A JP4786440B2 (ja) | 2006-07-04 | 2006-07-04 | 面入射型受光素子および光受信モジュール |
US11/702,203 US7687874B2 (en) | 2006-07-04 | 2007-02-05 | Surface illuminated photodiode and optical receiver module |
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JP2006184303A JP4786440B2 (ja) | 2006-07-04 | 2006-07-04 | 面入射型受光素子および光受信モジュール |
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JP2008016535A JP2008016535A (ja) | 2008-01-24 |
JP4786440B2 true JP4786440B2 (ja) | 2011-10-05 |
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CN106571402B (zh) * | 2016-11-18 | 2024-03-29 | 吉林瑞能半导体有限公司 | 一种快恢复功率二极管及其制造方法 |
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JPS5941877A (ja) * | 1982-08-31 | 1984-03-08 | Junichi Nishizawa | フオトトランジスタ |
JPS6364370A (ja) * | 1986-09-04 | 1988-03-22 | Nippon Telegr & Teleph Corp <Ntt> | 半導体受光素子 |
JP2675574B2 (ja) * | 1988-04-11 | 1997-11-12 | 富士通株式会社 | 半導体受光素子 |
JPH0258877A (ja) * | 1988-08-25 | 1990-02-28 | Nec Corp | 半導体受光素子 |
US5045908A (en) * | 1990-09-25 | 1991-09-03 | Motorola, Inc. | Vertically and laterally illuminated p-i-n photodiode |
JP2906713B2 (ja) * | 1991-03-29 | 1999-06-21 | 三菱電機株式会社 | 光素子の多重安定性取得方法 |
JPH0582827A (ja) | 1991-09-19 | 1993-04-02 | Nec Corp | 半導体受光素子 |
US5448099A (en) * | 1993-03-04 | 1995-09-05 | Sumitomo Electric Industries, Ltd. | Pin-type light receiving device, manufacture of the pin-type light receiving device and optoelectronic integrated circuit |
JPH0832097A (ja) | 1994-07-11 | 1996-02-02 | Hitachi Ltd | 受光素子の製造方法 |
JP3828982B2 (ja) * | 1997-04-14 | 2006-10-04 | 三菱電機株式会社 | 半導体受光素子 |
US6452242B1 (en) * | 2000-03-23 | 2002-09-17 | Mp Technologies Llc | Multi color detector |
WO2003081680A1 (fr) * | 2002-03-26 | 2003-10-02 | Japan Science And Technology Agency | Dispositif a magnetoresistance tunnel, dispositif de jonction de semiconducteurs et dispositif electroluminescent a semiconducteur |
IL156744A (en) * | 2003-07-02 | 2011-02-28 | Semi Conductor Devices An Elbit Systems Rafael Partnership | Depletion-less photodiode with suppressed dark current |
US7148463B2 (en) * | 2003-07-16 | 2006-12-12 | Triquint Semiconductor, Inc. | Increased responsivity photodetector |
JP2005129689A (ja) * | 2003-10-23 | 2005-05-19 | Sumitomo Electric Ind Ltd | 半導体受光素子及び光受信モジュール |
TW200642101A (en) * | 2005-05-18 | 2006-12-01 | Univ Southern Taiwan Tech | Photodetector |
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US20080006895A1 (en) | 2008-01-10 |
US7687874B2 (en) | 2010-03-30 |
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