JP4777820B2 - 半導体記憶装置およびその製造方法 - Google Patents
半導体記憶装置およびその製造方法 Download PDFInfo
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- JP4777820B2 JP4777820B2 JP2006116388A JP2006116388A JP4777820B2 JP 4777820 B2 JP4777820 B2 JP 4777820B2 JP 2006116388 A JP2006116388 A JP 2006116388A JP 2006116388 A JP2006116388 A JP 2006116388A JP 4777820 B2 JP4777820 B2 JP 4777820B2
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- 239000004065 semiconductor Substances 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title description 7
- 150000004770 chalcogenides Chemical group 0.000 claims description 25
- 239000010410 layer Substances 0.000 description 46
- 239000012782 phase change material Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000763 AgInSbTe Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910005537 GaSeTe Inorganic materials 0.000 description 1
- 229910005872 GeSb Inorganic materials 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- 229910005898 GeSn Inorganic materials 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 229910018321 SbTe Inorganic materials 0.000 description 1
- 229910018219 SeTe Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910006913 SnSb Inorganic materials 0.000 description 1
- 229910004284 Te81Ge15Sb2S2 Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- 229910008807 WSiN Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- FESBVLZDDCQLFY-UHFFFAOYSA-N sete Chemical compound [Te]=[Se] FESBVLZDDCQLFY-UHFFFAOYSA-N 0.000 description 1
- -1 silicide nitride Chemical class 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Description
12 上部電極
13 下部電極
14 基板
15 ゲート電極
16a,16b コンタクト
17 グランド配線
18a,18b コンタクト
19 層間絶縁膜
20 酸化膜
21 シリコン基板
22 層間絶縁膜
23 コンタクトホール
24 TiN膜
25 層間絶縁膜
26 カルコゲナイド膜
27 タングステン膜
31 酸化膜
Claims (9)
- 下部電極と上部電極との間に設けられた相変化層を備える半導体記憶装置において、
前記相変化層が前記下部電極の上方に位置するテーパー部を有し、
前記相変化層の最上平面の面積が前記相変化層の最下平面の面積よりも小さく、
前記上部電極は前記相変化層のテーパー部の上部には配置されておらずに、前記最上平面の上に設けられていることを特徴とする半導体記憶装置。 - 請求項1に記載された半導体記憶装置において
前記テーパー部が、前記下部電極と前記相変化層とが接する領域の上方に位置していることを特徴とする半導体記憶装置。 - 請求項1又は2に記載された半導体記憶装置において、
前記テーパー部が酸化膜で埋め込まれていることを特徴とする半導体記憶装置。 - 請求項1、2又は3に記載された半導体記憶装置において、
前記相変化層のテーパー部の形状に対応させて、前記下部電極がカップ型電極の一部を切断した形状であることを特徴とする半導体記憶装置。 - 請求項1乃至4のいずれか一つに記載された半導体記憶装置において、
前記相変化層がカルコゲナイドであることを特徴とする半導体記憶装置。 - 請求項1に記載された半導体記憶装置において、
前記下部電極は平面的に見てリング形状を有し、
前記相変化層のテーパー部は、前記リング形状の内側から外側に向かって配置され、かつ、前記リング形状を覆う部分を有することを特徴とする半導体記憶装置。 - 請求項6に記載された半導体記憶装置において、
前記テーパー部が酸化膜で埋め込まれていることを特徴とする半導体記憶装置。 - 請求項6又は7に記載された半導体記憶装置において、
前記相変化層のテーパー部の形状に対応させて、前記下部電極がカップ型電極の一部を切断した形状であることを特徴とする半導体記憶装置。 - 請求項6、7又は8に記載された半導体記憶装置において、
前記相変化層がカルコゲナイドであることを特徴とする半導体記憶装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006116388A JP4777820B2 (ja) | 2006-04-20 | 2006-04-20 | 半導体記憶装置およびその製造方法 |
US11/785,535 US7868312B2 (en) | 2006-04-20 | 2007-04-18 | Semiconductor memory device and manufacturing method thereof |
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JP2006116388A JP4777820B2 (ja) | 2006-04-20 | 2006-04-20 | 半導体記憶装置およびその製造方法 |
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Publication Number | Publication Date |
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JP2007288083A JP2007288083A (ja) | 2007-11-01 |
JP4777820B2 true JP4777820B2 (ja) | 2011-09-21 |
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JP2006116388A Active JP4777820B2 (ja) | 2006-04-20 | 2006-04-20 | 半導体記憶装置およびその製造方法 |
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US (1) | US7868312B2 (ja) |
JP (1) | JP4777820B2 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100979755B1 (ko) * | 2008-03-28 | 2010-09-02 | 삼성전자주식회사 | 상변화 메모리 소자 및 그 제조방법들 |
KR100971423B1 (ko) * | 2008-04-04 | 2010-07-21 | 주식회사 하이닉스반도체 | 상변화 메모리 소자 및 그 제조방법 |
US20100051896A1 (en) * | 2008-09-02 | 2010-03-04 | Samsung Electronics Co., Ltd. | Variable resistance memory device using a channel-shaped variable resistance pattern |
KR20100082604A (ko) * | 2009-01-09 | 2010-07-19 | 삼성전자주식회사 | 가변저항 메모리 장치 및 그의 형성 방법 |
US8283650B2 (en) * | 2009-08-28 | 2012-10-09 | International Business Machines Corporation | Flat lower bottom electrode for phase change memory cell |
US8283202B2 (en) * | 2009-08-28 | 2012-10-09 | International Business Machines Corporation | Single mask adder phase change memory element |
US8012790B2 (en) * | 2009-08-28 | 2011-09-06 | International Business Machines Corporation | Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell |
US8233317B2 (en) * | 2009-11-16 | 2012-07-31 | International Business Machines Corporation | Phase change memory device suitable for high temperature operation |
US8129268B2 (en) * | 2009-11-16 | 2012-03-06 | International Business Machines Corporation | Self-aligned lower bottom electrode |
US7943420B1 (en) * | 2009-11-25 | 2011-05-17 | International Business Machines Corporation | Single mask adder phase change memory element |
KR101617381B1 (ko) | 2009-12-21 | 2016-05-02 | 삼성전자주식회사 | 가변 저항 메모리 장치 및 그 형성 방법 |
KR20110103160A (ko) * | 2010-03-12 | 2011-09-20 | 삼성전자주식회사 | 반도체 소자 및 이를 제조하는 방법 |
US9660188B2 (en) * | 2014-08-28 | 2017-05-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Phase change memory structure to reduce leakage from the heating element to the surrounding material |
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US6147395A (en) * | 1996-10-02 | 2000-11-14 | Micron Technology, Inc. | Method for fabricating a small area of contact between electrodes |
US6015977A (en) * | 1997-01-28 | 2000-01-18 | Micron Technology, Inc. | Integrated circuit memory cell having a small active area and method of forming same |
US6972430B2 (en) | 2002-02-20 | 2005-12-06 | Stmicroelectronics S.R.L. | Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof |
KR100481866B1 (ko) * | 2002-11-01 | 2005-04-11 | 삼성전자주식회사 | 상변환 기억소자 및 그 제조방법 |
KR100639206B1 (ko) * | 2004-06-30 | 2006-10-30 | 주식회사 하이닉스반도체 | 상변환 기억 소자 및 그 제조방법 |
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- 2007-04-18 US US11/785,535 patent/US7868312B2/en active Active
Also Published As
Publication number | Publication date |
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JP2007288083A (ja) | 2007-11-01 |
US20070246440A1 (en) | 2007-10-25 |
US7868312B2 (en) | 2011-01-11 |
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