JP4773495B2 - 圧電素子の製造方法 - Google Patents
圧電素子の製造方法 Download PDFInfo
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- JP4773495B2 JP4773495B2 JP2008262370A JP2008262370A JP4773495B2 JP 4773495 B2 JP4773495 B2 JP 4773495B2 JP 2008262370 A JP2008262370 A JP 2008262370A JP 2008262370 A JP2008262370 A JP 2008262370A JP 4773495 B2 JP4773495 B2 JP 4773495B2
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- 238000000034 method Methods 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims description 96
- 239000000463 material Substances 0.000 claims description 47
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 229910052580 B4C Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000006104 solid solution Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 23
- 230000008859 change Effects 0.000 description 16
- 230000000694 effects Effects 0.000 description 14
- 230000007547 defect Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 230000008602 contraction Effects 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
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- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
図1は、本発明の実施の形態に係る圧電基板を示す断面図である。図1に示す圧電基板1は、基材11と、基材11の一方の主面上に形成された膜12とから主に構成されている。基材11において、膜12を形成する主面は、鏡面化された主面11aである。
(実施例)
線膨張係数が16.1×10-6/Kであり、直径4インチ、厚さ0.25mmのタンタル酸リチウム製基板(LT基板)21の一方の主面(裏面)を鏡面化した。なお、鏡面化処理は、コロイダルシリカを用いて研磨機により行った。線膨張係数は、サーモプラス2(株式会社リガク社製)のシステムの熱機械分析装置(TMA−8310)の示差膨張モードにおいて測定した(於工業技術センター)。
図5(a)に示すように、直径4インチ、厚さ約0.5mmのLT基板31の一方の主面(裏面)に直径4インチ、厚さ0.4mmのサファイア基板32を常温接合した。なお、常温接合の際には、LT基板31及びサファイア基板32の接合面をアルゴンイオンビームにより活性化した。次いで、図5(b)に示すように、LT基板31の表面側から研削処理及び/又は研磨処理を行って、LT基板31の厚さを20μmに調整した。
11 基材
11a 主面
12 膜
21 LT基板
22 温度補償膜
23 パターン
24 SAWデバイスチップ
24a くし型電極
Claims (4)
- 10×10−6/K〜20×10−6/Kの線膨張係数を有し、鏡面化された主面を有する基材を準備する工程と、前記基材の前記鏡面化された主面上に、前記基材の線膨張係数よりも小さく、−1×10−6/K〜10×10−6/Kの線膨張係数を有する材料で構成され、5〜40%の気孔率を有する膜を形成した後、前記膜に充填材料を充填する工程と、前記鏡面化された主面と反対側の主面上に素子を形成する工程と、を具備することを特徴とする圧電素子の製造方法。
- 前記素子がくし型電極であることを特徴とする請求項1記載の圧電素子の製造方法。
- 前記材料は、Ti、W、Mo、Ta、Si及びこれらの合金、酸化アルミニウム、酸化ケイ素、酸化マグネシウム、酸化ジルコニウム、酸化チタン、炭化ケイ素、炭化ホウ素、窒化アルミニウム、窒化ケイ素及びこれらの化合物の固溶体、並びにこれら金属及び化合物の混合物からなる群より選ばれた少なくとも一つであることを特徴とする請求項1又は請求項2記載の圧電素子の製造方法。
- 前記基材は、タンタル酸リチウム又はニオブ酸リチウムで構成されていることを特徴とする請求項1から請求項3のいずれかに記載の圧電素子の製造方法。
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JP2008262370A JP4773495B2 (ja) | 2006-07-27 | 2008-10-09 | 圧電素子の製造方法 |
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JP2008262370A JP4773495B2 (ja) | 2006-07-27 | 2008-10-09 | 圧電素子の製造方法 |
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JP2007045045A Division JP4247282B2 (ja) | 2006-07-27 | 2007-02-26 | 圧電基板及びその製造方法 |
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JP2009055625A JP2009055625A (ja) | 2009-03-12 |
JP4773495B2 true JP4773495B2 (ja) | 2011-09-14 |
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Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001053579A (ja) * | 1999-06-02 | 2001-02-23 | Matsushita Electric Ind Co Ltd | 弾性表面波素子と移動体通信機器 |
JP2001111378A (ja) * | 1999-10-13 | 2001-04-20 | Toyo Commun Equip Co Ltd | 弾性表面波素子及び弾性表面波デバイス |
JP2002135076A (ja) * | 2000-10-27 | 2002-05-10 | Matsushita Electric Ind Co Ltd | 弾性表面波デバイスおよびその製造方法 |
JP4723207B2 (ja) * | 2004-05-31 | 2011-07-13 | 信越化学工業株式会社 | 複合圧電基板 |
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