JP4772560B2 - 光半導体装置、およびその制御方法 - Google Patents
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- 230000003287 optical effect Effects 0.000 title claims description 113
- 239000004065 semiconductor Substances 0.000 title claims description 66
- 238000000034 method Methods 0.000 title description 17
- 239000002184 metal Substances 0.000 claims description 39
- 230000010355 oscillation Effects 0.000 claims description 18
- 238000001514 detection method Methods 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 238000005253 cladding Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 101150023508 TEC1 gene Proteins 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910010282 TiON Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1209—Sampled grating
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
TH = TTEC1 + ΔT (1)
TLD = TTEC2 (2)
9 ヒータ
10 電源電極
11 グランド電極
20 温度制御装置
30 キャリア
31,32,33,34 金属パターン
35,36 温度センサ
37 ワイヤ
40 波長可変半導体レーザチップ
51,52,53,54 領域
100 レーザモジュール
Claims (5)
- 利得領域である第1の光導波路と、表面にヒータを備え前記第1の光導波路と光結合した第2の光導波路と、を備える波長可変半導体レーザチップと、
前記波長可変半導体レーザチップを搭載するマウントキャリアと、
前記マウントキャリア上の領域であって、前記波長可変半導体レーザチップのうち前記第2の光導波路側に偏った、前記波長可変半導体レーザチップの両側のいずれかの第1エリアに配置され、前記ヒータの電源電極と複数の第1のワイヤを介して接続された複数の第1の金属パターンと、
前記マウントキャリア上の領域であって、前記波長可変半導体レーザチップを挟んで前記第1エリアと反対側の第2エリアにおいて前記ヒータのグランド電極と第2のワイヤを介して接続され、前記波長可変半導体レーザチップの下面全体をカバーする第2の金属パターンと、
前記マウントキャリア上の領域であって、前記波長可変半導体レーザチップのうち前記第1の光導波路側に偏った、前記波長可変半導体レーザチップの両側のうち前記第2エリア側の第3エリアに配置され、前記第1の光導波路の温度を検出する第1の温度センサと、を備え、
前記第1のワイヤの数は、前記第2のワイヤの数よりも多く、
前記マウントキャリアは、温度制御装置上に設けられ、
前記第1の光導波路および前記第2の光導波路は、回折格子を有する第1の領域と、前記第1の領域に連結されかつスペース部となる第2の領域とを備えるセグメントを複数備えることを特徴とする光半導体装置。 - 前記第1のワイヤおよび前記第1の金属パターンは、それぞれ3つ以上設けられていることを特徴とする請求項1記載の光半導体装置。
- 前記第1エリアまたは前記第2エリアに第2の温度センサがさらに配置されていることを特徴とする請求項1記載の光半導体装置。
- 前記マウントキャリアは、前記温度制御装置の表面であることを特徴とする請求項1〜3のいずれかに記載の光半導体装置。
- 前記請求項1〜4のいずれかに記載の光半導体装置に対し、
前記ヒータの温度を制御し、かつ、前記第1の温度センサの検出結果に基づいて前記温度制御装置の温度を制御することによって、前記波長可変半導体レーザチップの発振波長を制御することを特徴とする光半導体装置の制御方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2006097707A JP4772560B2 (ja) | 2006-03-31 | 2006-03-31 | 光半導体装置、およびその制御方法 |
US11/727,953 US7362782B2 (en) | 2006-03-31 | 2007-03-29 | Optical semiconductor device and controlling method of the same |
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JP2006097707A JP4772560B2 (ja) | 2006-03-31 | 2006-03-31 | 光半導体装置、およびその制御方法 |
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JP2007273735A JP2007273735A (ja) | 2007-10-18 |
JP4772560B2 true JP4772560B2 (ja) | 2011-09-14 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5474338B2 (ja) * | 2008-11-28 | 2014-04-16 | 住友電工デバイス・イノベーション株式会社 | 半導体レーザのチューニング方法 |
JP5388566B2 (ja) * | 2008-12-26 | 2014-01-15 | 住友電工デバイス・イノベーション株式会社 | 半導体レーザ装置 |
JP2012119637A (ja) | 2010-12-03 | 2012-06-21 | Sumitomo Electric Device Innovations Inc | 光半導体装置の製造方法 |
JP2014013823A (ja) | 2012-07-04 | 2014-01-23 | Sumitomo Electric Ind Ltd | 波長可変半導体レーザの制御方法 |
US9531155B2 (en) * | 2014-04-09 | 2016-12-27 | Applied Optoelectronics, Inc. | Switched radio frequency (RF) driver for tunable laser with multiple in-line sections |
JP6542514B2 (ja) * | 2014-08-08 | 2019-07-10 | 住友電工デバイス・イノベーション株式会社 | 半導体レーザ装置 |
Family Cites Families (18)
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JP3035852B2 (ja) * | 1990-07-18 | 2000-04-24 | 富士通株式会社 | 半導体レーザモジュール |
JP3386250B2 (ja) * | 1994-10-24 | 2003-03-17 | リコーエレメックス株式会社 | 熱依存性検出装置 |
US5536085A (en) * | 1995-03-30 | 1996-07-16 | Northern Telecom Limited | Multi-wavelength gain-coupled distributed feedback laser array with fine tunability |
JP3990745B2 (ja) * | 1995-09-06 | 2007-10-17 | アンリツ株式会社 | 半導体光モジュール |
JP2914248B2 (ja) * | 1995-09-23 | 1999-06-28 | 日本電気株式会社 | 波長可変半導体レーザ素子 |
JPH10282373A (ja) * | 1997-04-07 | 1998-10-23 | Oki Electric Ind Co Ltd | 光モジュールおよび光モジュールの形成方法 |
JP3384310B2 (ja) * | 1997-12-19 | 2003-03-10 | 三菱電機株式会社 | レーザダイオードモジュール |
JP2001094200A (ja) * | 1999-09-21 | 2001-04-06 | Hitachi Ltd | 半導体レーザモジュール |
JP2001127377A (ja) * | 1999-10-28 | 2001-05-11 | Hitachi Ltd | 光送信装置および光伝送装置 |
US6795453B2 (en) * | 2000-10-30 | 2004-09-21 | Santur Corporation | Laser thermal tuning |
US6727598B2 (en) * | 2001-05-14 | 2004-04-27 | University Of Maryland, Baltimore County | Thermally tunable system |
JP3820942B2 (ja) * | 2001-08-30 | 2006-09-13 | ヤマハ株式会社 | 熱電モジュール実装装置及びその温度制御方法 |
JP2003168843A (ja) * | 2001-09-19 | 2003-06-13 | Furukawa Electric Co Ltd:The | 半導体レーザ装置および半導体レーザモジュール |
US7079715B2 (en) * | 2001-10-09 | 2006-07-18 | Infinera Corporation | Transmitter photonic integrated circuit (TxPIC) chip architectures and drive systems and wavelength stabilization for TxPICs |
JP2004079989A (ja) * | 2002-04-04 | 2004-03-11 | Furukawa Electric Co Ltd:The | 光モジュール |
JP4625661B2 (ja) * | 2004-08-11 | 2011-02-02 | 日本オプネクスト株式会社 | 半導体光素子、レーザモジュール、及び光送受信器 |
US7224708B2 (en) * | 2004-08-30 | 2007-05-29 | The Aerospace Corporation | Focused ion beam heater thermally tunable laser |
US20060203862A1 (en) * | 2005-03-10 | 2006-09-14 | Harmonic Inc. | Method and apparatus for CWDM optical transmitter with extended operating temperature range |
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US7362782B2 (en) | 2008-04-22 |
JP2007273735A (ja) | 2007-10-18 |
US20070230521A1 (en) | 2007-10-04 |
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