JP4763424B2 - 固体撮像素子の駆動方法 - Google Patents
固体撮像素子の駆動方法 Download PDFInfo
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- JP4763424B2 JP4763424B2 JP2005323377A JP2005323377A JP4763424B2 JP 4763424 B2 JP4763424 B2 JP 4763424B2 JP 2005323377 A JP2005323377 A JP 2005323377A JP 2005323377 A JP2005323377 A JP 2005323377A JP 4763424 B2 JP4763424 B2 JP 4763424B2
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- 238000003384 imaging method Methods 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 24
- 238000009825 accumulation Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 108091006146 Channels Proteins 0.000 description 121
- 238000001514 detection method Methods 0.000 description 14
- 238000001444 catalytic combustion detection Methods 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
- H04N25/443—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading pixels from selected 2D regions of the array, e.g. for windowing or digital zooming
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
- H04N3/1568—Control of the image-sensor operation, e.g. image processing within the image-sensor for disturbance correction or prevention within the image-sensor, e.g. biasing, blooming, smearing
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
62 感光領域
64 垂直転送チャネル
66 水平転送チャネル
67 電荷検出部
68 ラインメモリ
69 ラインメモリ転送路
71 電荷蓄積領域
72 トランスファーゲート
74 絶縁膜
75 垂直転送電極
76 チャネルストップ領域
77 シリコン酸化膜
78 窒化シリコン膜
79 遮光膜
79a 開口部
81 半導体基板
82 ウエル層
83a、b 平坦化層
84 カラーフィルタ層
85 マイクロレンズ
87 第1層水平転送電極
88 第2層水平転送電極
90 フローティングディフージョン
91 リセットゲート
92 リセットゲート電極
93 リセットドレイン
94 アンプ
Claims (3)
- 第1導電型の半導体基板と、
前記半導体基板内に形成された、前記第1導電型とは逆導電型の第2導電型のウエルと、
前記ウエル内に形成された複数の前記第1導電型の電荷蓄積領域であって、行列状に配置され、入射光の光量に応じて生成された信号電荷を蓄積する電荷蓄積領域と、
前記行列状に配置された電荷蓄積領域の列に沿って前記ウエル内に形成され、前記電荷蓄積領域に蓄積された信号電荷が読み出され、読み出された前記信号電荷が列方向に転送される前記第1導電型の垂直転送チャネルと、
前記ウエル内に形成され、前記垂直転送チャネルの端部に結合され、前記垂直転送チャネルから転送された前記信号電荷が保持される前記第1導電型のラインメモリ転送路と、
前記ウエル内に形成され、前記ラインメモリ転送路の端部に結合され、前記ラインメモリ転送路から転送された前記信号電荷が行方向に転送される前記第1導電型の水平転送チャネルと
を有し、前記電荷蓄積領域に蓄積された信号電荷を前記垂直転送チャネルに読み出し、1水平ブランク期間に対し水平転送チャネルの転送を1回行い、信号電荷を出力する固体撮像素子の駆動方法であって、
第1の水平ブランク期間に前記垂直転送チャネルから前記ラインメモリに第1の行の信号電荷を転送し、次の第2の水平ブランク期間に、その一部を前記ラインメモリから前記水平転送チャネルに転送し、次の第3の水平ブランク期間に、前記第1の行の残余の信号電荷を前記ラインメモリから前記水平転送チャネルに転送した後、前記第1の行の次の第2の行の信号電荷を前記垂直転送チャネルから空になった前記ラインメモリに転送する固体撮像素子の駆動方法。 - 前記固体撮像素子が画素ずらし配列の固体撮像素子である請求項1に記載の固体撮像素子の駆動方法。
- 前記第1導電型がn型である請求項1または2に記載の固体撮像素子の駆動方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005323377A JP4763424B2 (ja) | 2005-11-08 | 2005-11-08 | 固体撮像素子の駆動方法 |
US11/585,145 US7595822B2 (en) | 2005-11-08 | 2006-10-24 | Driving method of solid-state image pickup device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005323377A JP4763424B2 (ja) | 2005-11-08 | 2005-11-08 | 固体撮像素子の駆動方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007134774A JP2007134774A (ja) | 2007-05-31 |
JP2007134774A5 JP2007134774A5 (ja) | 2008-10-09 |
JP4763424B2 true JP4763424B2 (ja) | 2011-08-31 |
Family
ID=38003345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005323377A Expired - Fee Related JP4763424B2 (ja) | 2005-11-08 | 2005-11-08 | 固体撮像素子の駆動方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7595822B2 (ja) |
JP (1) | JP4763424B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4992352B2 (ja) * | 2006-09-11 | 2012-08-08 | ソニー株式会社 | 固体撮像装置 |
JP2008104013A (ja) * | 2006-10-19 | 2008-05-01 | Fujifilm Corp | 固体撮像素子の駆動方法及び撮像装置。 |
JP2009070902A (ja) * | 2007-09-11 | 2009-04-02 | Fujifilm Corp | 撮像素子及び撮像装置 |
JP2009076746A (ja) * | 2007-09-21 | 2009-04-09 | Fujifilm Corp | 固体撮像素子、撮像装置、及び固体撮像素子の製造方法 |
JP6019295B2 (ja) * | 2012-03-05 | 2016-11-02 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及びカメラシステム |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2812380B2 (ja) * | 1992-12-28 | 1998-10-22 | 松下電子工業株式会社 | 固体撮像装置およびその駆動方法 |
JP2907058B2 (ja) * | 1995-04-21 | 1999-06-21 | 富士ゼロックス株式会社 | 蓄積手段を持つイメージセンサ及び画像読取装置 |
JP2825075B2 (ja) * | 1995-12-27 | 1998-11-18 | 日本電気株式会社 | 固体撮像素子とその駆動方法 |
US5990953A (en) * | 1995-12-15 | 1999-11-23 | Nec Corporation | Solid state imaging device having overflow drain region provided in parallel to CCD shift register |
JP4329128B2 (ja) * | 1996-07-12 | 2009-09-09 | ソニー株式会社 | 固体撮像装置、固体撮像装置の駆動方法およびカメラ |
JP3830590B2 (ja) * | 1996-10-30 | 2006-10-04 | 株式会社東芝 | 固体撮像装置 |
JP3657780B2 (ja) * | 1998-06-30 | 2005-06-08 | 株式会社東芝 | 撮像装置 |
JP2000115643A (ja) * | 1998-10-06 | 2000-04-21 | Sony Corp | 固体撮像装置の駆動方法、固体撮像装置、固体撮像素子、並びに撮像カメラ |
US6933976B1 (en) * | 1999-09-03 | 2005-08-23 | Fuji Photo Film Co., Ltd. | Solid-state image pickup device |
JP4497688B2 (ja) * | 1999-09-27 | 2010-07-07 | 富士フイルム株式会社 | 固体撮像装置 |
JP2001238134A (ja) * | 2000-02-23 | 2001-08-31 | Sony Corp | 固体撮像素子およびその駆動方法並びにカメラシステム |
JP4514912B2 (ja) * | 2000-07-21 | 2010-07-28 | 富士フイルム株式会社 | 固体撮像装置およびその駆動方法 |
JP4338298B2 (ja) | 2000-10-04 | 2009-10-07 | 富士フイルム株式会社 | 電荷転送装置およびその駆動方法 |
JP4515617B2 (ja) * | 2000-10-23 | 2010-08-04 | 富士フイルム株式会社 | 固体撮像素子およびその駆動方法 |
JP2002185870A (ja) | 2000-12-11 | 2002-06-28 | Fuji Film Microdevices Co Ltd | 固体撮像素子 |
-
2005
- 2005-11-08 JP JP2005323377A patent/JP4763424B2/ja not_active Expired - Fee Related
-
2006
- 2006-10-24 US US11/585,145 patent/US7595822B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20070103573A1 (en) | 2007-05-10 |
JP2007134774A (ja) | 2007-05-31 |
US7595822B2 (en) | 2009-09-29 |
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