JP4742545B2 - 炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 122
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 113
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 111
- 238000000034 method Methods 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 125000005842 heteroatom Chemical group 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 239000012298 atmosphere Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000007772 electrode material Substances 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 35
- 230000003647 oxidation Effects 0.000 description 19
- 238000007254 oxidation reaction Methods 0.000 description 19
- 239000012535 impurity Substances 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/0865—Disposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
始めに、図1を参照して、本発明の実施形態となる炭化珪素半導体装置の構成について説明する。なお、図1は、本発明の実施形態となる炭化珪素半導体装置の断面構成図を示し、2つの構成単位(セル)が連続的に形成されている状態を表している。
次に、図2を参照して、上記炭化珪素半導体装置1の製造方法について説明する。
次に、上記炭化珪素半導体装置1のスイッチ動作について説明する。
2:炭化珪素半導体基板
3:炭化珪素エピタキシャル層
4:炭化珪素半導体基体
5:絶縁膜
5a,5b:ゲート絶縁膜(第1のゲート絶縁膜)
6:多結晶シリコン
6a,6b:ゲート電極
7a,7b:ゲート絶縁膜(第2のゲート絶縁膜)
8:ヘテロ半導体領域
10a,10b:層間絶縁膜
11:ソース電極
12:ドレイン電極
13:リン
D:ドレイン端子
G:ゲート端子
S:ソース端子
Claims (6)
- 炭化珪素半導体基体と、炭化珪素半導体基体表面の所定領域に形成された、炭化珪素半導体基体と異なるバンドキャップ幅を有する半導体材料から成るヘテロ半導体領域と、ゲート絶縁膜を介して炭化珪素半導体基体とヘテロ半導体領域のヘテロ接合界面に隣接して配置されたゲート電極と、ヘテロ半導体領域に接続されたソース電極と、炭化珪素半導体基体に接続されたドレイン電極とを備える炭化珪素半導体装置の製造方法であって、
前記炭化珪素半導体基体表面を熱酸化して絶縁膜を形成する工程と、
前記絶縁膜上に前記ゲート電極を形成するゲート電極材料を堆積する工程と、
前記絶縁膜と前記ゲート電極材料をエッチングすることにより、前記炭化珪素半導体基体表面の一部を露出させて、第1のゲート絶縁膜と前記ゲート電極を形成する工程と、
露出している前記炭化珪素半導体基体表面には第2のゲート絶縁膜が形成されず、前記ゲート電極表面に前記第2のゲート絶縁膜が形成される条件の水蒸気と酸素の混合雰囲気下で、前記ゲート電極表面を熱酸化する工程と、
前記第1のゲート絶縁膜と前記ゲート電極を形成したときに露出した前記炭化珪素半導体基体表面に前記へテロ半導体領域を形成する工程と、
を有することを特徴とする炭化珪素半導体装置の製造方法。 - 請求項1記載の炭化珪素半導体装置の製造方法であって、
前記炭化珪素半導体基体表面を熱酸化して絶縁膜を形成するときの水蒸気と酸素の混合雰囲気下における酸素分圧は、前記ゲート電極表面を選択的に熱酸化して第2のゲート絶縁膜を形成するときの水蒸気と酸素の混合雰囲気下における酸素分圧よりも高いことを特徴とする炭化珪素半導体装置の製造方法。 - 請求項2記載の炭化珪素半導体装置の製造方法であって、
前記ゲート電極表面を選択的に熱酸化するときに、酸素分圧が5%未満の水蒸気と酸素の混合雰囲気下で行われることを特徴とする炭化珪素半導体装置の製造方法。 - 請求項1乃至請求項3に記載の炭化珪素半導体装置の製造方法であって、
前記ゲート電極材料は、少なくともシリコンを含むことを特徴とする炭化珪素半導体装
置の製造方法。 - 請求項4に記載の炭化珪素半導体装置の製造方法であって、
前記ゲート電極材料は、多結晶シリコンであることを特徴とする炭化珪素半導体装置の
製造方法。 - 請求項1乃至請求項5のうち、いずれか1項に記載の炭化珪素半導体装置の製造方法であって、
前記半導体材料は、多結晶シリコン、単結晶シリコン、及びアモルファスシリコンのうちのいずれかであることを特徴とする炭化珪素半導体装置の製造方法。
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JP4742545B2 true JP4742545B2 (ja) | 2011-08-10 |
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Families Citing this family (7)
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JP5151076B2 (ja) * | 2006-06-21 | 2013-02-27 | 日産自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
JP5228291B2 (ja) | 2006-07-06 | 2013-07-03 | 日産自動車株式会社 | 半導体装置の製造方法 |
JP4916247B2 (ja) * | 2006-08-08 | 2012-04-11 | トヨタ自動車株式会社 | 炭化珪素半導体装置及びその製造方法 |
JP4793293B2 (ja) * | 2007-03-16 | 2011-10-12 | 日産自動車株式会社 | 炭化珪素半導体装置及びその製造方法 |
JP6237046B2 (ja) * | 2013-09-25 | 2017-11-29 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
US20150236151A1 (en) * | 2014-02-18 | 2015-08-20 | General Electric Company | Silicon carbide semiconductor devices, and methods for manufacturing thereof |
JP7308760B2 (ja) * | 2017-12-27 | 2023-07-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000022137A (ja) * | 1998-07-07 | 2000-01-21 | Fuji Electric Co Ltd | 炭化けい素mos半導体素子の製造方法および炭化けい素mos半導体素子 |
JP2003318398A (ja) * | 2002-04-26 | 2003-11-07 | Nissan Motor Co Ltd | 炭化珪素半導体装置 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000022137A (ja) * | 1998-07-07 | 2000-01-21 | Fuji Electric Co Ltd | 炭化けい素mos半導体素子の製造方法および炭化けい素mos半導体素子 |
JP2003318398A (ja) * | 2002-04-26 | 2003-11-07 | Nissan Motor Co Ltd | 炭化珪素半導体装置 |
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