JP4693505B2 - 光電変換装置およびそれを用いた光発電装置 - Google Patents
光電変換装置およびそれを用いた光発電装置 Download PDFInfo
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- JP4693505B2 JP4693505B2 JP2005161879A JP2005161879A JP4693505B2 JP 4693505 B2 JP4693505 B2 JP 4693505B2 JP 2005161879 A JP2005161879 A JP 2005161879A JP 2005161879 A JP2005161879 A JP 2005161879A JP 4693505 B2 JP4693505 B2 JP 4693505B2
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- semiconductor layer
- semiconductor
- photoelectric conversion
- electrode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Description
10:粒状半導体
11:半導体層
16:他方の電極
19:基板
29:不純物層
30:接合層
31:一方の電極
32:粒界接合層
33:高濃度の一導電型の半導体層
Claims (5)
- 一方の電極となる導電性基板上に、一導電型を呈する粒状半導体が該粒状半導体よりも不純物濃度が高い粒界接合層を介して焼結した焼結体からなる多孔質半導体層および逆導電型を呈する半導体層が積層されているとともに、該半導体層に他方の電極が接続されており、前記他方の電極上に導電性粒子から成る集電極が形成されているとともに、前記導電性粒子の平均粒径が前記粒状半導体の平均粒径よりも大きいことを特徴とする光電変換装置。
- 前記半導体層は、その一部が前記多孔質半導体層の内部の隙間に入り込んでいることを特徴とする請求項1記載の光電変換装置。
- 前記粒界接合層は、前記粒状半導体よりも融点が低いことを特徴とする請求項1または請求項2記載の光電変換装置。
- 前記半導体層は、アモルファス半導体から成ることを特徴とする請求項1乃至請求項3のいずれかに記載の光電変換装置。
- 請求項1乃至請求項4のいずれかに記載の光電変換装置を発電手段として用い、該発電手段の発電電力を負荷へ供給するように成したことを特徴とする光発電装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2005161879A JP4693505B2 (ja) | 2005-06-01 | 2005-06-01 | 光電変換装置およびそれを用いた光発電装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2005161879A JP4693505B2 (ja) | 2005-06-01 | 2005-06-01 | 光電変換装置およびそれを用いた光発電装置 |
Publications (2)
Publication Number | Publication Date |
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JP2006339385A JP2006339385A (ja) | 2006-12-14 |
JP4693505B2 true JP4693505B2 (ja) | 2011-06-01 |
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JP2005161879A Expired - Fee Related JP4693505B2 (ja) | 2005-06-01 | 2005-06-01 | 光電変換装置およびそれを用いた光発電装置 |
Country Status (1)
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JP (1) | JP4693505B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8629462B2 (en) * | 2008-06-09 | 2014-01-14 | San Diego State University Research Foundation | Organic photovoltaic cell and light emitting diode with an array of 3-dimensionally fabricated electrodes |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000091625A (ja) * | 1998-09-08 | 2000-03-31 | Digital Wave:Kk | 半導体装置製造用基板、その製造方法、及び、光電変換装置、その製造方法 |
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2005
- 2005-06-01 JP JP2005161879A patent/JP4693505B2/ja not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000091625A (ja) * | 1998-09-08 | 2000-03-31 | Digital Wave:Kk | 半導体装置製造用基板、その製造方法、及び、光電変換装置、その製造方法 |
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JP2006339385A (ja) | 2006-12-14 |
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